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Monte Carlo analysis of a low power domino gate under parameter fluctuation
Wang Jinhui, Wu Wuchen, Gong Na, Hou Ligang, Peng Xiaohong, Gao Daming. Monte Carlo analysis of a low power domino gate under parameter fluctuation[J]. Journal of Semiconductors, 2009, 30(12): 125010. doi: 10.1088/1674-4926/30/12/125010 Wang J H, Wu W C, Gong N, Hou L G, Peng X H, Gao D M. Monte Carlo analysis of a low power domino gate under parameter fluctuation[J]. J. Semicond., 2009, 30(12): 125010. doi: 10.1088/1674-4926/30/12/125010.Export: BibTex EndNote
Authors:Wang Jinhui  Wu Wuchen  Gong Na  Hou Ligang  Peng Xiaohong  Gao Daming
Affiliation:VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China;VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China;Department of Computer Science and Engineering, State University of New York at Bu?alo, Bu?alo 14260, NY, USA;VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China;VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China;VLSI and System Laboratory, Beijing University of Technology, Beijing 100124, China
Abstract:Using the multiple-parameter Monte Carlo method, the effectiveness of the dual threshold voltage technique (DTV) in low power domino logic design is analyzed. Simulation results indicate that under significant temperature and process fluctuations, DTV is still highly effective in reducing the total leakage and active power consumption for domino gates with speed loss. Also, regarding power and delay characteristics, different structure domino gates with DTV have different robustness against temperature and process fluctuation.
Keywords:domino gate  temperature and process fluctuation  effectiveness
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