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Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy
Authors:Kun Chen  Xi Wan  Weiguang Xie  Jinxiu Wen  Zhiwen Kang  Xiaoliang Zeng  Huanjun Chen  Jianbin Xu
Affiliation:1. Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, P. R. China;2. Siyuan Laboratory, Department of Physics, Jinan University, Guangzhou, Guangdong, China;3. State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat‐sen University, Guangzhou, China;4. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
Abstract:
Keywords:built‐in electric fields  built‐in potential  depletion‐layer width  heterostructures  SKPFM
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