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Flexible Electronics: Hybrid Flexible Resistive Random Access Memory‐Gated Transistor for Novel Nonvolatile Data Storage (Small 3/2016) |
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| Authors: | Su‐Ting Han Ye Zhou Bo Chen Chundong Wang Li Zhou Yan Yan Jiaqing Zhuang Qijun Sun Hua Zhang V. A. L. Roy |
| Affiliation: | 1. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China;2. Institute for Advanced Study, Shenzhen University, Shenzhen, Guangdong, P. R. China;3. State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong SAR, China;4. School of Materials Science and Engineering, Nanyang Technological University, Singapore;5. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, P. R. China |
| Abstract: | |
| Keywords: | flash memories flexible electronics molybdenum disulphide nonvolatile data storage resistive switching random access memory |