| 中红外片上集成光电子综述（特邀） |
| |
| 引用本文： | 林宏焘,孙博姝,马辉,钟础宇,巨泽朝. 中红外片上集成光电子综述（特邀）[J]. 红外与激光工程, 2022, 51(1): 20211111-1-20211111-14. DOI: 10.3788/IRLA20211111 |
| |
| 作者姓名： | 林宏焘 孙博姝 马辉 钟础宇 巨泽朝 |
| |
| 作者单位： | 浙江大学 信息与电子工程学院，浙江 杭州 310063 |
| |
| 基金项目： | 国家自然科学基金(61975179)；国家重点研发计划(2019 YFB2203002） |
| |
| 摘 要： | 信息技术的发展使得通讯波段集成光子技术在过去的几十年中被广泛重视并取得了突出进展，目前已走向商业化，这一技术的发展也激发了人们对于中红外波段（2~20 μm）片上光子集成的兴趣。中红外波段在空间光通信、热成像、物质探测分析等关乎国家发展、国防安全、民生改善等技术领域具有重要的应用前景。利用半导体工艺实现中红外光电子系统芯片小型化在尺寸、功耗以及大规模量产部署具有重大优势。因此，发展中红外片上集成光电子技术具有重大意义。文中主要针对于中红外波段片上集成的一些关键基础器件（如:调制器、探测器）的突破性进展及代表性工作进行了回顾；对各器件的种类、性能、参数及加工手段分别进行了较为全面的调研与比较；同时，也对器件的发展进程、亟待解决的问题以及对未来的展望进行了总结。
|
| 关 键 词： | 中红外 集成光子 光学探测器 |
| 收稿时间： | 2021-12-25 |
Review of mid-infrared on-chip integrated photonics (Invited) |
| |
| Lin Hongtao,Sun Boshu,Ma Hui,Zhong Chuyu,Ju Zezhao. Review of mid-infrared on-chip integrated photonics (Invited)[J]. Infrared and Laser Engineering, 2022, 51(1): 20211111-1-20211111-14. DOI: 10.3788/IRLA20211111 |
| |
| Authors: | Lin Hongtao Sun Boshu Ma Hui Zhong Chuyu Ju Zezhao |
| |
| Affiliation: | College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310063, China |
| |
| Abstract: | With the development of information technology, integrated photonics at telecom band has caught broad attention, made outstanding progress in the past few decades, and has also been commercialized in recent years. The development of integrated photonics at the telecom band has also inspired people to be interested in integrated photonics at the mid-infrared (Mid-IR) band (2-20 μm). Mid-IR has promising potential in applications such as space optical communications, thermal imaging, material detection, and analysis, which is of vital significance in national development, national security, and improvement of people ’s welfare. Utilizing semiconductor fabrication processes, a miniature Mid-IR optoelectronic system integrated on a chip has superior advantages in terms of the device ’s size, power consumption, and mass production compared to conventional solutions. Therefore, it is meaningful to develop chip-scale Mid-IR photonics. In this review, the representative works and breakthroughs of fundamental integrated devices at Mid-IR wavelength including modulators and detectors in recent years were reviewed and evaluated. The classification, performance matrics, parameters, and fabrication methods of different kinds of devices were discussed and compared comprehensively. Meanwhile, the developing progress, unsolved problems, and prospects of integrated Mid-IR devices were analyzed. |
| |
| Keywords: | |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《红外与激光工程》浏览原始摘要信息 |
|
点击此处可从《红外与激光工程》下载免费的PDF全文 |
|
