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Ag-In共晶键合在硅-铜封接中的应用
引用本文:解亚杰, 常仁超, 王蓝陵, 夏宗禹, 毕海林, 王旭迪. Ag-In共晶键合在硅-铜封接中的应用[J]. 真空科学与技术学报, 2021, 41(12): 1157-1163. DOI: 10.13922/j.cnki.cjvst.202105007
作者姓名:解亚杰  常仁超  王蓝陵  夏宗禹  毕海林  王旭迪
作者单位:1.合肥工业大学机械工程学院 合肥 230009
基金项目:国家自然科学基金面上项目(61574053); 国家自然科学基金面上项目(61871172)
摘    要:目前在真空领域对于硅-铜封接的常用方式为Torr-Seal胶封接和玻璃粉高温烧结方式,但因其高放气率和玻璃粉污染等问题在超高真空受到限制,因此迫切需要一种气密性好、放气率低、工艺温和的封接方法.本文提出了一种基于Ag-In合金的硅-铜的新封接方法,即利用Ag-In合金中间层将硅片封接到无氧铜板支撑件上,并通过法兰连接到...

关 键 词:硅-铜封接  共晶键合  Ag-In合金  热应力仿真
收稿时间:2021-05-11

Silicon-Copper Sealing Based on Eutectic Bonding with Ag-In Alloy
JIE Yajie, CHANG Renchao, WANG Lanling, XIA Zongyu, BI Hailin, WANG Xudi. Silicon-Copper Sealing Based on Eutectic Bonding with Ag-In Alloy[J]. CHINESE JOURNAL VACUUM SCIENCE AND TECHNOLOGY, 2021, 41(12): 1157-1163. DOI: 10.13922/j.cnki.cjvst.202105007
Authors:JIE Yajie  CHANG Renchao  WANG Lanling  XIA Zongyu  BI Hailin  WANG Xudi
Affiliation:1.Hefei University of Technology, Hefei 230009, China
Abstract:The Torr-Seal gluing method and glass frit sintering method commonly used in silicon-copper sealing is difficult to apply to ultra-high vacuum on account of its high outgassing rate and glass frit pollution for the file of vacuum. Therefore,a sealing method with excellent hermeticity and low outgassing rate is urgently needed. In this paper,a new sealing method based on Ag-In alloy for the silicon-based standard conductive element is proposed;that is,the silicon wafer is sealed to an oxygen-free copper plate by a micro-nano manufacturing process with an Ag-In alloy layer,and then connected to a vacuum test system by the flange. The structural design of oxygen-free copper plate support was optimized,and the best buffering effect of the alloy layer was verified by the ANSYS workbench. The best process parameters were found through experiments,and the background leakage rate of the sealing assembly was measured by a helium mass spectrometer. The measurement results show that the minimum background leakage rate is 7.49×10-12 Pa·m3·s-1 at the atmospheric upstream pressure.
Keywords:Silicon-copper sealing  Eutectic bonding  Ag-In alloy layer  ANSYS
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