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新原理光电探测阵列的微光响应测试研究
引用本文:刘晓艳,王明甲,郭方敏. 新原理光电探测阵列的微光响应测试研究[J]. 红外与激光工程, 2014, 43(8): 2546-2551
作者姓名:刘晓艳  王明甲  郭方敏
作者单位:1.华东师范大学 教育部极化材料与器件实验室,上海 200241
基金项目:国家科技部重大科研项目(2006CB932802,2011CB932903);上海市科委配套(078014194,118014546)
摘    要:针对暗电流低、灵敏度高等优点的新原理量子效应光电探测器,设计和加工了增益可调CTIA读出电路,以获得宽动态范围读出。读出电路芯片与164元量子效应光电探测器集成封装,在室温(300 K)条件下进行读出测试研究。光源采用633 nmHe-Ne激光器,直径50 m光斑聚焦照射。测试结果表明:器件偏压为-0.1 V,激光功率150 pW,积分时间78 s,响应电压55 mV,电压响应率达到3.67 E+08 V/W。根据测试结果,提出了进一步降低暗电流影响的改进测试方案。

关 键 词:微光读出   量子效应器件   高灵敏度   增益可调读出电路   暗电流
收稿时间:2013-12-10

Test study on weak-light level response for new quantum effect photo-detector array
Affiliation:1.Key Laboratory of Polar Materials &Devices,Ministy of Education,East China Normal University,Shanghai 200241,China
Abstract:For new quantum effects photo-detector array which has small dark current and high sensitivity, a gain adjustable readout circuit based on CTIA structure and sampling and holding circuit with correlated double sampling (CDS) technique was designed and fabricated in order to obtain a application of wide dynamic range. The 633 nm laser beam with radiation intensity tunable which is calibrated by a power meter shoots on the photo-detector cell one by one with a 50 m diameter facula. The test results show that the readout response voltage can reach to 55 mV and responsivity 3.67 E+08 V/W when biased voltage up to -3 V and radiation intensity 150 pW at 300 K and integration time 78 s. The test system is improved to reduce dark current further.
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