| 热蒸发法碳化硅纳米晶须阵列的合成与表征 |
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| 引用本文： | 林晶,陈建军,杨光义,吴仁兵,翟蕊,吴玲玲,潘颐. 热蒸发法碳化硅纳米晶须阵列的合成与表征[J]. 复合材料学报, 2007, 24(5): 77-83 |
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| 作者姓名： | 林晶 陈建军 杨光义 吴仁兵 翟蕊 吴玲玲 潘颐 |
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| 作者单位： | 浙江大学,材料科学与工程系,杭州,310027;浙江理工大学,材料工程中心,杭州,310018;浙江大学,材料科学与工程系,杭州,310027 |
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| 基金项目： | 教育部高等学校博士学科点专项科研基金（20030335057） 国家自然科学基金（50472059） |
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| 摘 要： | 在1600℃不同真空度下, 采用热蒸发硅的方法, 在石墨基板和聚丙烯腈(PAN)炭纤维两种碳源基体原位生长具有一定取向的碳化硅纳米晶须——垂直于石墨片表面森林状和试管刷状碳化硅纳米晶须阵列。通过X射线衍射及场发射扫描电镜, 发现晶须为3C-SiC, 直径约100nm, 长度约50μm。炭纤维表面的产物顶端多为针尖状, 而石墨片表面的产物多为六方棱柱状。因其纳米尺寸效应, 在380nm波长的光激发下, 所制晶须在波长为468nm 附近出现光致发光峰。透射电镜、 多点衍射电子衍射图表明, 所制得的3C-SiC晶须为单晶, 其生长方向为3C-SiC的[111]方向。基于反应过程中硅熔体与碳源分离的事实, 讨论了3C-SiC晶须阵列生长的气固反应机理。
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| 关 键 词： | 碳化硅 晶须 气固反应机理 |
| 文章编号： | 1000-3851（2007）05-0077-07 |
| 收稿时间： | 2006-11-13 |
| 修稿时间： | 2007-03-28 |
Synthesis and characterization of silicon carbide whisker arrays prepared by thermal evaporation method |
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| LIN Jing,CHEN Jianjun,YANG Guangyi,WU Renbing,ZHAI Rui,WU Lingling,PAN Yi. Synthesis and characterization of silicon carbide whisker arrays prepared by thermal evaporation method[J]. Acta Materiae Compositae Sinica, 2007, 24(5): 77-83 |
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| Authors: | LIN Jing CHEN Jianjun YANG Guangyi WU Renbing ZHAI Rui WU Lingling PAN Yi |
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| Affiliation: | 1.Department of Materials and Engineering, Zhejiang University, Hangzhou 310027, China;2.Materials Engineering Center, Zhejiang University of Science and Technology, Hangzhou 310018, China |
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| Abstract: | SiC whiskers arrays were prepared by thermal evaporation of Si onto two carbon templates: graphite plate and PAN-carbon fiber at 1600℃ in different levels of vacuum. The XRD analyses and FESEM observations reveal that the products are 3C-SiC whisker arrays: whisker forests standing on the graphite plate and tube brush shaped whisker arrays around the carbon fibers, respectively. The dimensions of the whiskers grown on the two templates are about 100nm in diameter and 50μm in length. Due to the quantum confinement effect of nano-materials, a photoluminescence peak locating around 468nm is observed under 380nm excitation at room temperature. The multi-place selected area electron diffraction (SAED) demonstrates that the SiC whiskers are single crystals, growing in [111] direction. Based on the fact that the silicon melt and carbon templates were separated throughout the whole process, the vapor-solid reaction growth mechanism of the SiC whiskers is discussed. |
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| Keywords: | silicon carbide whisker vapor-solid reaction growth mechanism |
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