定向耦合光子晶体偏振光分束器的设计

在只有TE模光子带隙空气孔三角晶格光子晶体研究的基础上,设计出一种全新的、结构紧凑的定向耦合光子晶体偏振光分束器.根据波导间相互耦合与自映像原理,采用时域有限差分法分析了该器件的光传输特性.研究结果表明:由于导光机制不同,TE模和TM模可通过不同的相干长度分离;两种偏振光在波长1.55μm附近透射率都达到95%以上;该器件的尺寸比传统偏振光分束器短.这些优异性能在光予晶体集成电路中有极大的应用价值.     

二维光子晶体偏振分束器的优化设计北大核心

为解决二维光子晶体在光束调整和光束偏转中的应用,采用有限时域差分法和完全匹配层吸收边界条件,通过在结构中引入消反层,从理论上实现基于二维光子晶体的偏振分束器。优化计算表明,通过随光频的改变调节消反层参数,可以实现TE模超过95%的光发生透射,TM模超过95%的光发生反射,从而使TM模与TE模分离。引入消反层的偏振分束器具有尺寸小、透射率高、分束角大和偏振分束率高等优点,在高密度集成光通信系统中有广泛的应用。     

太赫兹波段二维光子晶体传输器件的设计

应用平面波展开法研究了太赫兹波段二维光子晶体的传输特性,设计了一种新型的太赫兹波段传输器件,即由正方柱组成的正方晶格光子晶体.研究了它形成的最大TE模、TM模和完全带隙,并与由圆柱组成的正方晶格二维光子晶体的最大TE模、TM模和完全带隙进行比较,发现正方柱组成的正方晶格二维光子晶体形成的TE模较大.结果表明,正方柱组成的正方晶格二维光子晶体适合制作H极化片,可以制作太赫兹波段的传输器件.     

负折射率缺陷层的一维各向异性光子晶体缺陷模特性

本文提出了负折射率缺陷层的一维各向异性光子晶体结构,利用传输矩阵的方法给出了TE波和TM波的透射率,结果表明在TE波中出现两个及多个缺陷模,TM波存在单缺陷模,两种偏振状态不同的透射波的缺陷模能分开,得出了光通过负折射率缺陷层的一维各向异性光子晶体后TE波和TM波随入射角的变化特性、随缺陷层厚度的的变化特性。这些特性用于光子晶体多通滤波、光子晶体偏振和激光谐振腔等器件的设计具有重要意义。     

基于自成像多模干涉光子晶体波导的耦合特性

模拟计算了二维三角形光子晶体波导自成像多模干涉的耦合特性.提出两种不同结构的二维光子晶体分束器,基于自成像多模干涉效应,用有限时域差分法数值计算和分析了这两种分束器的特性.研究发现其中一种分束器的反射率低于10-4,透射率可高达0.999 9,而另外一种分束器的反射率为1,透射率为0.分析发现,造成这种现象的物理原因是多模干涉区的自成像效应,这种多模干涉在光子晶体光学集成电路中具有重大的潜在应用价值.     

等离子体填充二维金属光子晶体色散特性研究

 提出了等离子体填充的二维金属光子晶体模型,采用时域有限差分法研究了等离子体填充的二维正方晶格和三角晶格金属光子晶体的色散和带隙特性.对比分析了两种结构中等离子体密度对TM及TE模式传播特性的影响规律.研究发现,由于背景等离子体的引入,二维金属光子晶体的色散曲线明显往高频方向移动,等离子体密度的改变可同时控制TE和TM模的带隙位置和禁带宽度.这些特性使得二维等离子体金属光子晶体在设计可调谐光子晶体器件方面具有潜在的应用价值.     

光子晶体波导定向耦合功分器的设计

将相互耦合的3平行光子晶体单模波导看成一个多模干涉系统,通过研究二维正方晶格光子晶体波导多模干涉的自映像效应,优化设计了一种新型1×2光子晶体波导定向耦合分束器,采用时域有限差分法对其传输特性进行模拟分析。设计过程中,根据多模干涉耦合区中周期出现的双重像的位置确定两个单模输出波导的位置,通过改变输出波导和耦合区连结的一个介质柱位置构成波导微腔结构,改变耦合区中的模场分布,实现模式匹配,从而明显减小分束器的反射损耗。计算结果表明,移动介质柱距离输出单模波导和多模波导连结处1.85a位置处时,对于波长为1.55μm的入射光,该分束器的透射率可高达99.04%。     

基于自成像多模干涉的光子晶体波导1×2分束器

通过模拟计算研究了二维三角形1光子晶体波导自成像多模干涉的耦合特性,提出了一种二维光子晶体1×2分束器.基于自成像多模干涉效应,用有限时域差分法对这种分束器的特性进行了数值计算和分析.研究发现,这种分束器的透射率可高达96%,造成这种现象的物理原因是多模干涉区的自成像效应,这种多模干涉在光子晶体光学集成电路中具有重大的潜在应用价值.     

二维光子晶体带隙结构透过率的研究

计算了二维光子晶体TM模透射率频率分布,并用FDTD+PML边界方法对光子晶体传输特性进行分析,直观地给出了光在光子晶体中的光场分布,分析了不同网格精细度和晶体层数对于透过率的影响。     

用平面波展开法计算二维方形光子晶体的带隙结构

用平面波展开法计算二维正方晶格光子晶体的带隙结构,对二维光子晶体的电磁波理论及周期介质中的Bloch波解进行了详细的推导,得出TE模和TM模下无缺陷时光子晶体的色散曲线,并设计了低频区域内具有较大带隙宽度的两种二维光子晶体的空间周期结构.经过大量的计算,发现硅中的空气柱型光子晶体在红外波段TE模和TM模存在重叠的绝对光子带隙,并分别研究了空气中的硅介质柱和硅中的空气柱的TM模带隙宽度随空气柱半径和填充比变化的规律.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.