1.58-/spl mu/m broad-band erbium-doped tellurite fiber amplifier

This paper describes the development of a 1.58-/spl mu/m broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er/sup 3+4/ I/sub 13/2/ /sup 4/I/sub 15/2/ transition and the signal excited-state absorption (ESA) cross sections of the Er/sup 3+4/ I/sub 13/2/ - /sup 4/I/sub 9/2/ transition. We detail the amplification characteristics of a 1.58-/spl mu/m-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-/spl mu/m-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-/spl mu/m-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%.     

两段级联宽带碲基掺铒光纤放大器特性研究

利用四能级结构速率方程组和光功率传输方程组,研究了在碲基掺铒光纤(EDTF)中内插一个光隔离器、形成两段级联的碲基掺铒光纤放大器(EDTFA)后对EDTFA性能的改善.结果表明,在给定泵浦方式、泵浦功率、纤芯掺杂浓度和输入信号功率条件下,两段级联EDTFA可以有效的抑制光纤中反向传输放大自发辐射(ASE)噪声,降低反转粒子数的消耗,从而提高信号增益、输出功率,并且降低了噪声系数.对不同光纤长度和光隔离器内插在光纤中不同位置的研究表明,当光纤为最佳长度和光隔离器在最佳位置处时,可使短波长信号增益增加10 dB,噪声系数减小1 dB,并进一步增加了放大带宽以及功率转换效率.     

碲基掺铒光纤放大器增益均衡的数值模拟

针对宽带碲基掺铒光纤放大器(EDTFA)本征增益谱不平坦特性,研究了采用双级串连结构,并在两段光纤中间加入增益均衡滤波器来实现增益平坦.模拟结果显示,通过设计一定结构的滤波谱,在37信道同时输入的情况下,铒离子掺杂浓度为4000 ppm时,使1536～1608 nm范围带宽内的增益达到了24 dB左右,噪声指数小于5.5 dB,增益谱的不平坦度小于1 dB;铒离子掺杂浓度为6000 ppm时,使1536～1608 nm范围带宽内的增益达到了23.5 dB左右.噪声指数小于5 dB,增益谱的不平坦度小于1dB.优化后的级连EDTFA可以满足WDM系统的要求.     

宽带碲基掺铒光纤放大器上能级粒子数反转比

对宽带碲基掺铒光纤放大器(EDTFA)上能级粒子数反转比进行了理论研究,得到了碲基掺铒光纤放大器上能级粒子数反转比随着光纤激活长度、信号输入功率、泵浦功率和纤芯掺杂浓度的演变关系,分析了上能级粒子数反转比分布与EDTFA信号增益间的关系.研究表明,碲基掺铒光纤内的上能级粒子数反转比分布决定了EDTFA的信号增益.     

980 nm band pumped Er/sup 3+/-doped tellurite-based fibre amplifier with low-noise figure of less than 4.5 dB

The amplification characteristics of an Er/sup 3+/-doped tellurite-based fibre amplifier (EDTFA) with 980 nm band pumping are described. The optimum pump wavelength and length of the newly developed EDTF are investigated in order to obtain both a low noise figure and a high gain simultaneously. We realise a low noise figure of less than 4.5 dB with a pump wavelength of 976.5 nm and a 0.4 m EDTF.     

Optical time-division multiplexed transmission at 8 Gbit/s using single laser and semiconductor optical power amplifier

The authors report transmission over 57 km of single-mode fibre in a two-channel, 8 Gbit/s optical time-division multiplexed system experiment using a transmitter with a single laser and a semiconductor optical power amplifier at the transmitter output. The amplifier operates with a net gain of 11.5 dB, which corresponds to 0.8 dB gain compression, and a fibre coupled output power of +6 dBm. The amplifier facet output power for which the gain is compressed by 3 dB is +13 dBm. The experimental system uses neither an isolator nor an optical filter.<>     

Characterization of an InGaAsP semiconductor laser amplifier as amultifunctional device

Multifunctional properties of an InGaAsP semiconductor laser amplifier have been evaluated. A bit error rate of 10^-9 at 100 Mb/s was obtained using the amplifier as a detector at a received optical power of -27 dBm with simultaneous cavity gain of 16 dB. The bandwidth of the amplifier detector was 300 MHz and the maximum responsivity was 30 V/W. The amplifier had a maximum gain of 29 dB and a very large optical on/off ratio of 50 dB. When the amplifier was used as a switch the cavity gain was 19 dB and the extinction ratio was 22 dB     

宽带碲基掺铒光纤放大器掺杂特性的理论研究

对WDM系统中宽带碲基掺铒光纤放大器(EDTFA)多信道增益谱特性的研究表明,在给定泵浦方式、泵浦功率和光纤长度的工作条件下,碲基掺铒光纤中铒掺杂浓度对EDTFA各信道信号增益的影响并不相同,相比于长波长信道,短波长信道的信号增益随着光纤中铒掺杂浓度的提高更易趋于饱和及快速衰减状态,同时信号增益谱向长波长方向萎缩.     

Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems

A distributed amplifier with new cascade inductively coupled common-source gain-cell configuration is presented. Compared with other existing gain-cell configurations, the proposed cascade common-source gain cell can provide much higher transconductance and, hence, gain. The new distributed amplifier using the proposed gain-cell configuration, fabricated via a TSMC 0.18-/spl mu/m CMOS process, achieves an average power gain of around 10 dB, input match of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire ultra-wideband (UWB) band of 3.1-10.6 GHz. This is the lowest power consumption ever reported for fabricated CMOS distributed amplifiers operating over the whole UWB band. In the high-gain operating mode that consumes 100 mW, the new CMOS distributed amplifier provides an unprecedented power gain of 16 dB with 3.2-6-dB noise figure over the UWB range.     

毫米波大动态宽带单片低噪声放大器

利用0.25μmGaAsPHEMT低噪声工艺,设计并制造了2种毫米波大动态宽带单片低噪声放大器。第1种为低增益大动态低噪声放大器,单电源+5V工作,测得在26～40GHz范围内,增益G=10±0.5dB,噪声系数NF≤2.2dB,1分贝压缩点输出功率P1dB≥15dBm;第2种为低压大动态低噪声放大器,工作电压为3.6V,静态电流0.6A(输出功率饱和时,动态直流电流约为0.9A),在28～35GHz范围内,测得增益G=14～17dB,噪声系数约4.0dB,1分贝压缩点输出功率P1dB≥24.5dBm,最大饱和输出功率≥26.8dBm,附加效率约10%～13.6%。结果中还给出了2种放大器直接级联的情况。     

Design of N-way distributed Doherty amplifier for WCDMA and OFDM applications

A novel three-way distributed Doherty power amplifier with an extended efficiency range for WCDMA or OFDM repeater or base-station applications is presented. This distributed Doherty amplifier consists of one main amplifier and two peaking amplifiers. To achieve high efficiency at a high back-off power, the peaking amplifier structure is based on the dual-fed distributed amplifier form. The 2140 MHz measured results of the three-way distributed Doherty amplifier yielded an 11 dB power gain, with 39.5% power added efficiency at 9.5 dB back-off power     

基于GaN 的3. 4~ 3. 6 GHz 高增益Doherty 功率放大器

基于两级功率放大器架构,设计了一款平均输出功率为37 dBm(5 W)的高增益Doherty 功率放大器。 该器件通过增加前级驱动功率放大器提高Doherty 功率放大器的增益,采用反向Doherty 功率放大器架构,将λ/4 波 长传输线放置在辅助功放后端,相位补偿线放置在主功放前端,并使主功放输出匹配网络采用双阻抗匹配技术实现 阻抗变换,如此可扩宽功率放大器的工作带宽。连续波测试结果显示:3. 4~3. 6 GHz 工作频段内,饱和输出功率在 44. 5 dBm 以上,功率饱和工作点PAE 在43. 9%以上;在平均输出功率(37 dBm,5 W)工作点,回退量大于7. 5 dB,功 率附加效率PAE 为36. 8%以上,功率增益在31 dB 以上。     

碲基掺铒光纤放大器增益特性的理论研究

在综合考虑Er^3 离子的能量上转换、交叉驰豫、激发态吸收效应以及光纤背景损耗后，依据所建立的均匀加宽四级结构速率方程组和光功率传输方程组，对碲基掺铒光纤放大器的增益特性进行了数值模拟，模拟结果与报道的实验测量结果达到了很好的一致。同时，对碲基掺铒光纤放大器的增益特性与输入信号功率、泵浦功率和光纤长度的关系进行了简要分析。     

Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT

正A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor(PHEMT) technology from Win Semiconductor of Taiwan.A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB.A novel cascode structure is adopted to extend the output voltage and bandwidth.The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of±1 dB in the 2-20 GHz band.The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz.The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point(IIP3),which demonstrates the excellent performance of linearity.The power consumption is 300 mW with a supply of 5 V,and the chip area is 2.36×1.01 mm~2.     

A 6-GHz Four-Stage GaAs MESFET Power Amplifier (Short Papers)

A 6-GHz GaAs MESFET power amplifier with 1-W output power, 26dB gain, and 8-dB noise figure is described. It is a fully integrated four-stage amplifier with an efficiency of 22 percent. The third-order intermodulation product is 31.5 dB below the carrier at an output power of 1 W.     

Linearised HBT MMIC power amplifier with partially RF coupled active bias circuit for W-CDMA portable terminals applications

A highly linear MMIC power amplifier for wideband code-division multiple-access (W-CDMA) portable terminals has been devised and implemented with a new integrated on-chip lineariser. The proposed lineariser, consisting of an InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit partially coupled to RF input power together with a feedback capacitor, effectively improves gain compression with little insertion power loss and no additional die area. The optimised lineariser improves maximum output power (P1 dB) by 2 dB and adjacent channel leakage power ratio (ACLR) by 4 dB, and the implemented HBT MMIC power amplifier exhibits a P1 dB of 30 dBm, a power gain of 30 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and an ACLR of -34 dBc at 27 dBm of output power.     

一个4～12GHz混合集成宽带功率放大器

设计研制了一个4～12GHz的宽带混合集成平衡功率放大器电路.该平衡放大器由一个4指的微带兰格耦合器实现.其输出连续波饱和功率在中心频率为8GHz时达到29.5dBm,在4～12GHz频率范围内增益达到8.5dB,增益平坦度为+/-0.6dB.     

SiGe MMIC power amplifier with on-chip lineariser for X-band applications

An X-band linear power amplifier with an on-chip lineariser is developed using a 0.25 mum SiGe HBT BiCMOS process. The proposed on-chip lineariser improves the 1 dB compression to as much as 3.4 dB with no additional DC power consumption. Under a 3.3 V DC power supply, the single-stage cascode amplifier shows a measured small-signal gain of 12.2 dB and output PI dB of 20.8 dBm, with power added efficiency of 27.4% at the operating frequency range 8.5-10.5 GHz.     

基于SiGe工艺的高增益射频功率放大器

基于0.13μm SiGe HBT工艺,设计应用于无线局域网(WLAN)802.11b/g频段范围内的高增益射频功率放大器.该功放工作在AB类,由三级放大电路级联构成,并带有温度补偿和线性化的偏置电路.仿真结果显示:功率增益高达30dB,1dB压缩点输出功率为24dBm,电路的S参数S11在1.5～4GHz大的频率范围内均小于-17dB,S21大于30dB,输出匹配S22小于-10dB,S12小于-90dB.最高效率可达42.7%,1dB压缩点效率为37%.     

应用于C-X-Ku波段的宽带功率放大器

采用0.25μm AlGaAs/InGaAs/GaAs PHEMT工艺技术,研制出了6～18GHz三级MMIC全匹配宽带功率放大器单片.在6～18GHz的工作频率下,放大器的平均功率增益为19dB,输出功率大于33.3dBm,在10GHz处有最大输出功率34.7dBm,输入回波损耗S11低于-10dB,输出回波损耗S22低于-6dB.与报道的C-X-Ku频段宽带功率放大器相比,有较好的功率平坦度.