A new niobate-based CaO–2CuO–Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> microwave dielectric ceramic composite for LTCC applications

A novel CaO–2CuO–Nb₂O₅ (CCN) ceramic composite was prepared by the solid-state reaction method in the temperature range of 810–890 °C. Typically, the CCN sintered at 870 °C exhibited the excellent microwave properties of ε _r ?=?15.7, Q?×?f?=?28,700 GHz, τ _f = ? 38.4 ppm/°C. The τ _f of CCN was turned to be near zero by adding TiO₂, while the ε _r increased slightly and the Q?×?f decreased. The 0.91CCN–0.09TiO₂ ceramic sintered at 920 °C showed modified properties of ε _r ?=?16.9, Q?×?f?=?21,500 GHz, τ _f = ? 1.6 ppm/°C, which shows potential in LTCC applications.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Thermal stability and fire behavior of aluminum diethylphosphinate-epoxy resin nanocomposites

The flame retardancy of 2, 2-bis(4-glycidyloxyphenyl)propane (DGEBA)-aluminum diethylphosphinate (AlPi) nanocomposites (EP-AlPi/(P ? x), x = 1, 2, 3 %) was greatly enhanced by ultrasonic dispersion of nano-sized AlPi into epoxy resin. The UL 94 V-0 rating can be reached for EP-AlPi nanocomposites with a relatively low addition amount of AlPi (on the account of 8.4 wt% or phosphorus content of 2 wt%) as well as the LOI value over 37.2. The glass transition temperature (T _g) enhanced properties were investigated by DTA, which showed that: T _gs were about 5 °C higher than that of neat epoxy resin; T _g increased along with content increasing of AlPi. Based on TGA results under a non-isothermal condition, the thermal degradation kinetics of EP-AlPi/(P ? x) composites were studied by Kissinger’s, Ozawa’s, Flynn–Wall–Ozawa’s and Coast-Redfern’s methods, which suggested the conversion function f (α) = 1/2α ^?1 or f (α) = [?ln(1 ? α)]^?1 for EP-AlPi/(P ? 1 %); f (α) = [?ln(1 ? α)]^?1 for EP-AlPi/(P ? 2 %) and EP-AlPi/(P ? 3 %) during the investigated process. The epoxy resin nanocomposites obtained in this study are green functional polymers and will become flame retardant potential candidates in electronic fields such as printed wiring boards with high performance.     

Good electrical performances and impedance analysis of (1 − <Emphasis Type="Italic">x</Emphasis>)KNN–<Emphasis Type="Italic">x</Emphasis>BMM lead-free ceramics

(1 ? x)(K_0.5Na_0.5)NbO₃–xBi(Mg_0.75Mo_0.25)O₃ [(1 ? x)KNN–xBMM] (x?=?0.005, 0.01, 0.02) ceramics were prepared via a solid-state reaction method. X-ray diffraction patterns (XRD) and Raman spectrum showed that a solid solution was formed between the BMM and KNN, which improved the electrical properties of KNN. With increasing the BMM content, the grain firstly increased and then decreased. When x?=?0.01, the ceramics exhibited the optimized microstructure, indicating that there exits an optimal doping component. Temperature dependence of relative permittivity also increases firstly and then decreases. The relative permittivity (ε_r) of ~?1418 in stabilization zone, ε_max?~?4861 at the Curie temperature T _C ~ 394 °C, good temperature stability ?ε/ε_123 °C?≤?±?15% from 123 °C to 348 °C, and the dielectric loss tanδ?≤?0.036 from 109 to 348 °C were obtained for 0.99KNN-0.01BMM ceramics. Conductivity behavior of the (1 ? x)KNN–xBMM was investigated as a function of temperature from 420 to 520 °C and frequency from 40 to 106 Hz, showing that the basic mechanisms of conduction and relaxation processes were thermally activated, and oxygen vacancies were the possible ionic charge transport carriers at higher temperatures.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Structural relaxation and electrical conductivity of molybdovanadate glass

⁵⁷Fe Mössbauer spectrum of conductive barium iron vanadate glass with a composition of 20BaO·10Fe₂O₃·70V₂O₅ (in mol%) showed paramagnetic doublet peak due to distorted Fe^IIIO₄ tetrahedra with isomer shift (δ) value of 0.37 (±?0.01) mm s^?1. Mössbauer spectra of 20BaO·10Fe₂O₃·xMoO₃·(70???x)V₂O₅ glasses (x?=?20–50) showed paramagnetic doublet peaks due to distorted Fe^IIIO₆ octahedra with δ’s of 0.40–0.41 (±?0.01) mm s^?1. These results evidently show a composition-dependent change of the 3D-skeleton structure from “vanadate glass” phase, composed of distorted VO₄ tetrahedra and VO₅ pyramids, to “molybdate glass” composed of distorted MoO₆ octahedra. After isothermal annealing at 500 °C for 60 min, Mössbauer spectra also showed a marked decrease in the quadrupole splitting (Δ) of Fe^III from 0.70 to 0.77 to 0.58–0.62 (±?0.02) mm s^?1, which proved “structural relaxation” of distorted VO₄ tetrahedra which were randomly connected to FeO₄, VO₅, MoO₆, FeO₆ and MoO₄ units by sharing corner oxygen atoms or edges. DC-conductivity (σ) of barium iron vanadate glass (x?=?0) measured at room temperature was 3.2?×?10^?6 S cm^?1, which increased to 3.4?×?10^?1 S cm^?1 after the annealing at 500 °C for 60 min. The σ’s of as-cast molybdovanadate glasses with x’s of 20–50 were ca. 1.1?×?10^?7 or 1.2?×?10^?7S cm^?1, which increased to 2.1?×?10^?2 (x?=?20), 6.7?×?10^?3 (x?=?35) and 1.9?×?10^?4 S cm^?1 (x?=?50) after the annealing at 500 °C for 60 min. It was concluded that the structural relaxation of distorted VO₄ tetrahedra was directly related to the marked increase in the σ, as generally observed in several vanadate glasses.     

Effect of Ni<Superscript>2+</Superscript> substitution on crystal structure and microwave dielectric properties for MgZrNb<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics

Monoclinic structured Mg_1?xNi_xZrNb₂O₈ (0?≤?x?≤?0.12) ceramics were synthesized for the first time through traditional solid-state reaction process and pure phase were obtained in all range. Rietveld refinement was used to analyze the crystal structure. With the increase of Ni²⁺ substitution amount, ε _r decreased, Q?×?f rose first then fell, τ _f shifted for the positive direction. Bond ionicity, lattice energy and bond energy were separately calculated to investigate the correlations with microwave dielectric properties. Typically, ceramics samples with the composition of Mg_0.92Ni_0.08ZrNb₂O₈ sintered at 1280 °C for 4 h exhibited the optimum microwave dielectric properties: ε _r ?=?24.58, Q?×?f?=?74534.1 GHz, τ _f ?=???49.11 ppm/°C, which could be a promising material for application.     

Doping mechanisms and electrical properties of bismuth tantalate fluorites

Phase-pure bismuth tantalate fluorites were successfully prepared via conventional solid-state method at 900 °C in 24–48 h. The subsolidus solution was proposed with the general formula of Bi_3+x Ta_1?x O_7?x (0 ≤ x ≤ 0.184), wherein the formation mechanism involved a one-to-one replacement of Ta⁵⁺ cation by Bi³⁺ cation within ~4.6 mol% difference. These samples crystallised in a cubic symmetry, space group Fm-3 m with lattice constants, a = b = c in the range 5.4477(± 0.0037)–5.4580(± 0.0039) Å. A slight increment in the unit cell was discernible with increasing Bi₂O₃ content, and this may attribute to the incorporation of relatively larger Bi³⁺ cation in the host structure. The linear correlation between lattice parameter and composition variable showed that the Vegard’s law was obeyed. Both TGA and DTA analyses showed Bi_3+x Ta_1?x O_7?x samples to be thermally stable as neither phase transition nor weight loss was observed within ~28–1000 °C. The AC impedance study of Bi₃TaO₇ samples was performed over the frequency range 5–13 MHz. At intermediate temperatures, ~350–850 °C, Bi_3+x Ta_1?x O_7?x solid solution was a modest oxide ion conductor with conductivity, ~10^?6–10^?3 S cm^?1; the activation energy was in the range 0.98–1.08 eV.     

Influence of Nd doping on microwave dielectric properties of SrTiO<Subscript>3</Subscript> ceramics

Sr_1?x Nd _x TiO₃ (x?=?0.08–0.14) ceramics were prepared by conventional solid-state methods. The analysis of crystal structure suggested Sr_1?x Nd _x TiO₃ ceramics appeared to form tetragonal perovskite structure. The relationship between charge compensation mechanism, microstructure feature and microwave dielectric properties were investigated. Trivalent Nd³⁺ substituting Sr²⁺ could effectively decrease oxygen vacancies. This reduction and relative density were critical to improve Q?×?f values of Sr_1?x Nd _x TiO₃ ceramics. For ε _r values, incorporation of Nd could restrain the rattling of Ti⁴⁺ cations and led to the reduction of dielectric constant. The τ _f values were strongly influenced by tilting of oxygen octahedral. The τ _f values decreased from 883 to 650 ppm/°C with x increasing from 0.08 to 0.14. A better microwave dielectric property was achieved for composition Sr_0.92Nd_0.08TiO₃ at 1460 °C: ε _r ?=?160, Q?×?f?=?6602 GHz, τ _f ?=?883 ppm/°C.     

Heavy metal removal from simulated wastewater using electrochemical technology: optimization of copper electrodeposition in a membraneless fluidized bed electrode

Heavy metal removal from industrial wastewaters has been intensively studied, since it is well known that they can cause severe problems to human health and aquatic life, even at very low concentrations. In this work, it was demonstrated that electrodeposition in fluidized bed electrode (FBE) can be efficiently employed to remove metal ions from solution, avoid contamination, and recover the metal. Copper electrodeposition from diluted solutions was efficiently performed using a membraneless FBE. The average current efficiency (ACE), average energy consumption (AEC), and space–time yield (AY) was optimized taking into account the operational and process variables. It was noted that for all response variables studied, the raise of supporting electrolyte concentration (C _s) contributed to improvements in the process. The operational conditions current (I) and bed expansion (E) determined the values of CE, Y, and EC under activated control, but the initial copper concentration (C ₀) determined how long the electrodeposition process will work under activated or mass transfer control, thus affecting the average values of CE, Y, and EC. Considering C ₀ of 500 mg L^?1, copper can be optimally recovered with ACE >60 %, AY >38 kg h^?1 m^?3, and AEC <4.0 kWh kg^?1 by applying the lowest I and the highest levels of E and C _s. It was concluded that the electrochemical technology using a membraneless FBE reactor is economically competitive and be applied for the treatment of wastewaters contaminated with copper or other metals.     

Good thermal stability and improved piezoelectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>–Bi(Mg<Subscript>0.75</Subscript>W<Subscript>0.25</Subscript>)O<Subscript>3</Subscript> solid solutions

In this paper, (1 ? x)(K_0.5Na_0.5)NbO₃–xBi(Mg_0.75W_0.25)O₃ (x = 0–0.015) lead-free dielectric ceramics were investigated. XRD analysis certified that the Bi(Mg_0.75W_0.25)O₃ has diffused into (K_0.5Na_0.5)NbO₃ to fabricate a new solid solution. The addition of Bi(Mg_0.75W_0.25)O₃ depressed the orthorhombic–tetragonal phase transition temperature from 210 to 176 °C and tetragonal–pseudocubic phase transition temperature (Curie point) from 419 to 400 °C. As x = 0.005, the ceramics exhibited high relative permittivity (ε ~ 1325), low dielectric loss (tan δ < 2.9%) tan δ stability (Δε/ε_168°C ≤ ±15%) in the temperature range of 168 ~ 369 °C. Especially, the ceramics also showed optimized piezoelectric constant (d ₃₃ = 122 pC N^?1) and remnant polarization (P_r = 32.57 μC cm^–2). These results indicated that the BMW added ceramics have potential applications in ferroelectric and thermal stability devices.     

Comparative analysis of the factors associated with citation and media coverage of clinical research

Our objective was to study the relationship between the design and content of randomized clinical trials (RCTs) and the subsequent number of citations in the medical literature and attention in online news and social media. We studied RCTs published during 2014 in five highly cited medical journals. This was a retrospective review focusing on characteristics of the individual trials and measures of citation and lay media attention. Primary outcome measures included citation count and Altmetric^® scores (a composite score measuring attention in news, blogs, Twitter^®, and Facebook^®). Two hundred and forty two RCTs were included in the final analysis. Trial characteristics that were positive predictors of citation count included investigation of Hepatitis C treatment (r = 0.35, p < 0.001), private funding (r = 0.24, p < 0.001), mortality-related endpoint (r = 0.22, p < 0.001), and research setting within the United States (r = 0.13, p < 0.001). The trial characteristic that positively predicted Altmetric score was the population size potentially affected (r = 0.39, p < 0.001). The only negative predictor of citation count was the size of the population potentially affected (r = ?0.21, p < 0.001). Negative predictors of the Altmetric score included investigation of Hepatitis C treatment (r = ?0.21, p < 0.001) and private funding (r = ?0.13, p < 0.001). While correlation magnitudes were weak, the predictors of biomedical literature citation and non-academic media coverage were different. These predictors may affect editorial decisions and, given the rising influence of health journalism, further study is warranted.     

Structure and electrical properties of MnO doped (Ba<Subscript>0.96</Subscript>Ca<Subscript>0.04</Subscript>)(Ti<Subscript>0.92</Subscript>Sn<Subscript>0.08</Subscript>)O<Subscript>3</Subscript> lead free ceramics

In this work, (Ba_0.96Ca_0.04)(Ti_0.92Sn_0.08)O₃–xmol MnO (BCTS–xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 ≤ x ≤ 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O–T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 °C demonstrated an optimum electrical behavior: d ₃₃ ~ 475 pC/N, k _p ~ 50 %, ε _r ~ 4060, tanδ ~ 0.4 %, P _r ~ 10.3 μC/cm², E _c ~ 1.35 kV/mm, T _C ~ 82 °C, strain ~0.114 % and \(d_{33}^{*}\) ~ 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO₃-based ceramics with lower sintering temperature, suggesting that the BCTS–xMn material system is a promising candidate for lead-free piezoelectric ceramics.     

Effect of bioactive dental adhesive on periodontal and endodontic pathogens

The objectives of this study were to: (1) develop a new bioactive dental bonding agent with nanoparticles of amorphous calcium phosphate and dimethylaminohexadecyl methacrylate for tooth root caries restorations and endodontic applications, and (2) investigate biofilm inhibition by the bioactive bonding agent against eight species of periodontal and endodontic pathogens for the first time. Bonding agent was formulated with 5?% of dimethylaminohexadecyl methacrylate. Nanoparticles of amorphous calcium phosphate at 30?wt% was mixed into adhesive. Eight species of biofilms were grown on resins: Porphyromonas gingivalis, Prevotella intermedia, Prevotella nigrescens, Aggregatibacter actinomycetemcomitans, Fusobacterium nucleatum, Parvimonas micra, Enterococcus faecalis, Enterococcus faecium. Colony-forming units, live/dead assay, biomass, metabolic activity and polysaccharide of biofilms were determined. The results showed that adding dimethylaminohexadecyl methacrylate and nanoparticles of amorphous calcium phosphate into bonding agent did not decrease dentin bond strength (P?>?0.1). Adding dimethylaminohexadecyl methacrylate reduced the colony-forming units of all eight species of biofilms by nearly three orders of magnitude. The killing efficacy of dimethylaminohexadecyl methacrylate resin was: P. gingivalis?>?A. actinomycetemcomitans?>?P. intermedia?>?P. nigrescens?>?F. nucleatum?>?P. micra?>?E. faecalis?>?E. faecium. Dimethylaminohexadecyl methacrylate resin had much less biomass, metabolic activity and polysaccharide of biofilms than those without dimethylaminohexadecyl methacrylate (P?<?0.05). In conclusion, a novel dental adhesive was developed for root caries and endodontic applications, showing potent inhibition of biofilms of eight species of periodontal and endodontic pathogens, and reducing colony-forming units by three orders of magnitude. The bioactive adhesive is promising for tooth root restorations to provide subgingival margins with anti-periodontal pathogen capabilities, and for endodontic sealer applications to combat endodontic biofilms.     

Effect of calcination temperature on structure and thermoelectric properties of CuAlO<Subscript>2</Subscript> powders

Copper aluminum oxide (CuAlO₂) with delafossite phase was synthesized by the Pechini method using different calcination temperatures to evaluate its influence on the structure and thermoelectric material properties. X-ray diffraction and Raman spectroscopy confirm that delafossite phase was formed at 1100 °C with the presence of 2H-CuAlO₂ and Al₂O₃ impurities, while at lower calcination temperatures (900 and 1000 °C), a mixture of CuO + CuAl₂O₄ (spinel phase) was observed. Energy-dispersive X-ray elemental maps display an even distribution of copper, aluminum and oxygen in the sample calcined at 1100 °C. Direct optical band gap, E _g = 3.6 eV, was calculated from reflectance diffuse spectra by Kubelka–Munk and Tauc methods. An absorption band at 1.7 eV accounts for defect levels, masking the characteristic indirect transition. The thermoelectric properties, such as Seebeck coefficient, and thermal and electrical conductivities of the sample calcined at 1100 °C were measured at different temperatures. Hall voltage and positive values of the Seebeck coefficient (425.8–434.4 µV K^?1) confirm the material’s p-type character. The independence of the Seebeck coefficient on the operation temperature indicates a small polaron electrical conduction mechanism. Thermal conductivity decreases exponentially with the temperature from 43.45 to 23.9 W m^?1 K^?1, where the principal contribution is due to phonons. Figure of merit ZT of sample calcined at 1100 °C between 100 and 800 °C increases from 1.42 × 10^?8 to 4.94 × 10^?4 in the order of the literature reports. From the Arrhenius plot ln(σT) versus 1000/T, an activation energy E _a = 0.32 eV for the electrical conductivity was calculated.     

Temperature-Dependent Thermal Conductivity of High Strength Lightweight Raw Perlite Aggregate Concrete

Twenty-four types of high strength lightweight concrete have been designed with raw perlite aggregate (PA) from the Erzincan Mollaköy region as new low-temperature insulation material. The effects of the water/cement ratio, the amount of raw PA, and the temperature on high strength lightweight raw perlite aggregate concrete (HSLWPAC) have been investigated. Three empirical equations were derived to correlate the thermal conductivity of HSLWPAC as a function of PA percentage and temperature depending on the water/cement ratio. Experimentally observed thermal conductivities of concrete samples were predicted 92 % of the time for each set of concrete matrices within 97 % accuracy and over the range from 1.457 W · m^?1 · K^?1 to 1.777 W · m^?1 · K^?1. The experimental investigation revealed that the usage of raw PA from the Erzincan Mollaköy region in concrete production reduces the concrete unit mass, increases the concrete strength, and furthermore, the thermal conductivity of the concrete has been improved. The proposed empirical correlations of thermal conductivity were considered to be applicable within the range of temperatures 203.15 K ≤ T ≤ 303.15 K in the form of λ = a(PAP ^b ) + c(T ^d ).     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.