Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Influence of Nd doping on microwave dielectric properties of SrTiO<Subscript>3</Subscript> ceramics

Sr_1?x Nd _x TiO₃ (x?=?0.08–0.14) ceramics were prepared by conventional solid-state methods. The analysis of crystal structure suggested Sr_1?x Nd _x TiO₃ ceramics appeared to form tetragonal perovskite structure. The relationship between charge compensation mechanism, microstructure feature and microwave dielectric properties were investigated. Trivalent Nd³⁺ substituting Sr²⁺ could effectively decrease oxygen vacancies. This reduction and relative density were critical to improve Q?×?f values of Sr_1?x Nd _x TiO₃ ceramics. For ε _r values, incorporation of Nd could restrain the rattling of Ti⁴⁺ cations and led to the reduction of dielectric constant. The τ _f values were strongly influenced by tilting of oxygen octahedral. The τ _f values decreased from 883 to 650 ppm/°C with x increasing from 0.08 to 0.14. A better microwave dielectric property was achieved for composition Sr_0.92Nd_0.08TiO₃ at 1460 °C: ε _r ?=?160, Q?×?f?=?6602 GHz, τ _f ?=?883 ppm/°C.     

Effects of LiF addition on the sintering behavior and microwave dielectric properties of Li<Subscript>2</Subscript>Mg<Subscript>3</Subscript>SnO<Subscript>6</Subscript> ceramics

Li₂Mg₃SnO₆ (abbreviation for LMS) ceramics doped with 1–4 wt% lithium fluoride (LiF) were prepared by the conventional solid-state reaction method. The effects of LiF addition on the phase compositions, sintering behaviors and microwave dielectric properties of LMS ceramics were investigated. A small amount of LiF addition could effectively decrease the sintering temperatures due to the liquid phase in the sintering process and induced no apparent degradation of the microwave dielectric properties. The optimized quality factor values for each composition firstly increased and then decreased with the increase of the LiF content. Whereas, the optimized dielectric permittivity increased with increasing of the LiF content. Distinguished microwave dielectric properties with a dielectric constant (ε _r) of 11.13, a quality factor (Q·f) of 104,750 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?10.83 ppm/°C were obtained for LMS ceramics sintered at 950?°C doped with 3 wt% LiF, which showed that the materials were suitable for the low temperature co-fired ceramics applications (LTCC).     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Characterization of Zn doped MgTiO<Subscript>3</Subscript> ceramics: an approach for RF capacitor applications

In the present study the effect of Zn substitution on densification, microstructure, microwave and broad band dielectric properties of MgTiO₃ ceramics were investigated. The (Mg_1?x Zn _x )TiO₃ (x?=?0.01–0.07) ceramics have been prepared by the conventional solid-state reaction method. The sintering conditions were optimized to obtain the best dielectric properties with maximum relative densities. The microwave dielectric properties are heavily influenced by the amount of x concentration. The optimum dielectric properties of ε _r ~ 17.34, Q?×?f _o ~ 274 THz, τ _f ~ -40.3 ppm/^oC is obtained for (Mg_0.95Zn_0.05)TiO₃ ceramics sintered at 1275?°C. The broad band dielectric properties of (Mg_0.95Zn_0.05)TiO₃ ceramics were measured in the frequency range of 1–100 MHz, and temperature range of 133–483 K. Interestingly, the broad band dielectric properties show relaxation behaviour with frequency. The higher temperature dielectric spectrum of (Mg_0.95Zn_0.05)TiO₃ (MZT) ceramics displayed a distinct dispersion, which is shifting towards a lower frequency side. The observed dielectric relaxation behavior is analyzed using Cole–Cole plot. Furthermore, voltage dependent capacitance behavior at different frequencies is studied for the MZT sample, and it’s interesting to note that the capacitance is stable with the variation in voltage. The electrical conductivity study is carried out as a function of frequency and temperature for MZT sample and the activation energy is calculated by using Arrhenius equation, which is found to be 0.07 eV at 10 MHz. The obtained dielectric response of MZT ceramics are suitable for dielectric resonator and type-1 RF capacitor applications.     

Low temperature sintering and dielectric properties of Ba<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript> microwave ceramics using Co<Subscript>2</Subscript>O<Subscript>3</Subscript> additives

The Ba₃(VO₄)₂–x wt% Co₂O₃ (x?=?0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co₂O₃ additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba₃(VO₄)₂ ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q?×?f value of 54,000 GH, the ε _r of 14.6 and the τ_f value of +58.5 ppm/°C were obtained in the sample of the Ba₃(VO₄)₂–3 wt% Co₂O₃ ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q?×?f values of the sample with Co₂O₃ higher than that of 3 wt% additions decreased because of the formation of Ba₂V₂O₇ phase.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Enhancing the microwave dielectric properties of Sr<Subscript>2</Subscript>Ca<Subscript>3</Subscript>Ta<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics by Zr Substitution

The compositions in Sr₂Ca₃Ta₄Ti_1?xZr_xO₁₇ (0?≤?x?≤?0.12) series were designed and fabricated by solid state sintering method. All the compositions formed single phases and crystallized in an orthorhombic crystal structure. Zr substitution led to the enhancing of the microwave dielectric properties by tuning the τ_f value through zero and increased the Q_uf_o value from 12,540 to 14,970 GHz with a slight decrease in ε_r. In the present study, a good combination of ε_r ~?51, Q_uf_o ~?145,43 GHz and τ_f ~ 3 ppm/°C were obtained for Sr₂Ca₃Ta₄Ti_0.90Zr_0.1O₁₇ ceramic sintered at 1575 °C for 4 h.     

A new niobate-based CaO–2CuO–Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> microwave dielectric ceramic composite for LTCC applications

A novel CaO–2CuO–Nb₂O₅ (CCN) ceramic composite was prepared by the solid-state reaction method in the temperature range of 810–890 °C. Typically, the CCN sintered at 870 °C exhibited the excellent microwave properties of ε _r ?=?15.7, Q?×?f?=?28,700 GHz, τ _f = ? 38.4 ppm/°C. The τ _f of CCN was turned to be near zero by adding TiO₂, while the ε _r increased slightly and the Q?×?f decreased. The 0.91CCN–0.09TiO₂ ceramic sintered at 920 °C showed modified properties of ε _r ?=?16.9, Q?×?f?=?21,500 GHz, τ _f = ? 1.6 ppm/°C, which shows potential in LTCC applications.     

Strong up-conversion luminescence and electrical properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> multifunctional ceramics by Er<Superscript>3+</Superscript> doping

Novel green-emitting piezoelectric ceramics of SrBi_4?x Er _x Ti₄O₁₅ (SBT-xEr) were prepared. Strong up-conversion with bright green (524 and 548 nm) and a relatively weak red (660 nm) emission bands were obtained under 980 nm excitation at room temperature, which is attributed to the intra 4f–4f electronic transition of (²H_11/2, ⁴S_3/2)–⁴I_15/2 and the transition from ⁴F_9/2 to ⁴I_15/2 of Er³⁺ ions, respectively. Simultaneously, Er³⁺ doping promotes the electrical properties. At 0.8 mol%Er, the optimal electric properties with high Curie temperature of T _c?~527?°C, large remanent polarization of 2P _r?~14.92 μC/cm² and piezoelectric constant of d ₃₃?~17 pC/N was achieved. As a multifunctional material, Er³⁺ doped SBT showed a great potential to be used in 3D-display, bio-imaging, solid state laser and optical temperature sensor.     

Tuning the temperature coefficient of resonant frequency for 8-layer twinned hexagonal perovskite Ba<Subscript>8</Subscript>ZnTa<Subscript>6</Subscript>O<Subscript>24</Subscript> ceramics

High-Q dielectric materials ilmenite MgTiO₃, columbite MgNb₂O₆ and cubic perovskite Ba₃NiTa₂O₉ with negative temperature coefficient of resonant frequency (τ _f ) were selected as candidates for compensating the τ _f of hexagonal perovskite Ba₈ZnTa₆O₂₄. X-ray diffraction data shows that Ba₈ZnTa₆O₂₄ coexists with Ba₃NiTa₂O₉ but is not compatible with MgTiO₃ and MgNb₂O₆ at high temperature. The τ _f for the mixed hexagonal/cubic perovskite Ba₈ZnTa₆O₂₄–Ba₃NiTa₂O₉ system is tunable via the temperature compensation effect and its quality factor may be improved via annealing the ceramics at high temperature to enhance the cation ordering in the cubic component. Permittivity ε _r  ~ 22–25, Q×f > 30,000 GHz and tunable τ _f within ±10 ppm/°C were achieved in the range of about 50–80 wt% Ba₃NiTa₂O₉ for the hexagonal/cubic perovskite composite Ba₈ZnTa₆O₂₄–Ba₃NiTa₂O₉ ceramics, which is suitable for the application as dielectric resonators and filters.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>3</Subscript>Mg<Subscript>2</Subscript>NbO<Subscript>6</Subscript> ceramics for LTCC application

The Li₃Mg₂NbO₆ ceramics doped with ZnO-B₂O₃-SiO₂ (ZBS) additives were synthesized via the conventional solid-state reaction process. The influence of ZBS additives on phase composition, sintering behavior, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated in detail. The XRD patterns showed that the sintered specimen presented a single phase and no secondary phase appeared. We found that proper amount of ZBS additives could significantly reduce the sintering temperature from 1250 to 925?°C and promote the densification of Li₃Mg₂NbO₆ ceramics. The ε_r and Q?×?f value were strongly affected by bulk density and grain size, respectively. As ZBS content increased, the τ_f value shifted toward negative direction. In summary, excellent microwave dielectric properties of ε_r?~?14.84, Q?×?f?~?73,987 GHz, τ_f?~??16.05 ppm/°C could be obtained in 0.5 wt.% ZBS modified sample when sintered at 925?°C for 4 h. Furthermore, the material was compatible with Ag electrode, demonstrating that it would be a promising candidate material for LTCC application.     

Structure and electrical properties of MnO doped (Ba<Subscript>0.96</Subscript>Ca<Subscript>0.04</Subscript>)(Ti<Subscript>0.92</Subscript>Sn<Subscript>0.08</Subscript>)O<Subscript>3</Subscript> lead free ceramics

In this work, (Ba_0.96Ca_0.04)(Ti_0.92Sn_0.08)O₃–xmol MnO (BCTS–xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 ≤ x ≤ 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O–T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 °C demonstrated an optimum electrical behavior: d ₃₃ ~ 475 pC/N, k _p ~ 50 %, ε _r ~ 4060, tanδ ~ 0.4 %, P _r ~ 10.3 μC/cm², E _c ~ 1.35 kV/mm, T _C ~ 82 °C, strain ~0.114 % and \(d_{33}^{*}\) ~ 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO₃-based ceramics with lower sintering temperature, suggesting that the BCTS–xMn material system is a promising candidate for lead-free piezoelectric ceramics.     

Effects of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> additive on sintering behavior and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

ZnTa₂O₆ ceramics with various amount of Al₂O₃ additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa₂O₆ ceramics was accelerated with Al₂O₃ additive. However, excessive addition (>1.0 wt%) of Al₂O₃ leaded to abnormal grain growth. With Al₂O₃ addition, the Al₂O₃ additive did not solubilized into ZnTa₂O₆ structure but resulted in forming the second phase. The Al₂O₃ addition resulted in the lower sintering temperature of ZnTa₂O₆ ceramics and improved microwave dielectric properties. The dielectric constant (ε_r) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al₂O₃ addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ _f ) of the doped ZnTa₂O₆ ceramics could be optimized to near-zero.     

Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Dielectric relaxation phenomena in the compound: LiCo<Subscript>3/5</Subscript>Mn<Subscript>1/5</Subscript>Cu<Subscript>1/5</Subscript>VO<Subscript>4</Subscript>

Solution-based chemical method has been used to produce LiCo_3/5Mn_1/5Cu_1/5VO₄ ceramics. The formation of the compound is checked by X-ray diffraction analysis and it reveals an orthorhombic unit cell structure with lattice parameters of a = 9.8262 Å, b = 3.0706 Å, c = 14.0789 Å. Field emission scanning electron micrograph indicates a polycrystalline texture of the material with grains of unequal sizes (~0.2 to 3 μm). Complex impedance spectroscopy technique is used to study the dielectric properties. Temperature dependence of dielectric constant (ε _r) at various frequencies exhibits the dielectric anomalies in ε _r at T _c (transition temperature) = 245, 255, 260 and 265 °C with (ε_r)_max. ~458, 311, 214 and 139 for 50, 100, 200 and 500 kHz, respectively. Frequency dependence of tangent loss at various temperatures shows the presence of dielectric relaxation in the material.     

NaF induced enhancement of luminous efficiency in narrow-band red-emitting K<Subscript>2</Subscript>TiF<Subscript>6</Subscript>:Mn<Superscript>4+</Superscript>@NaF phosphors

A series of K₂TiF₆:xMn⁴⁺ @NaF samples were prepared by the cation exchange method in HF solution. Coating effects of NaF on the fluorescent properties of the samples were discussed. It is interesting that NaF has induced enhancement of luminous efficiency for the samples. Mechanism of NaF induced enhanced luminescence effect was suggested. That is that the enhancement effect of NaF coating is mainly attributed to a suitable local distortion of the crystal field surrounding the Mn⁴⁺ activator through doping with NaF. The results indicate that the optimal conditions are x?=?0.07 and w_NaNO3?=?2.5 g. Decay lifetime and the photoluminescence quantum yield of the optimal sample are 5.25 ms and 99.19?±?0.03%, respectively. The chromaticity coordinates of the optimal sample are x?=?0.6926, y?=?0.3073. So, the phosphor emits deep red light, which can be applied for blue light-based white LED.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on the microstructure and electrical properties of LaMnO<Subscript>3</Subscript>-based NTC thermistors

A study to develop a new system of negative temperature coefficient thermistors for wide temperature range, A series of Mn-based perovskite-structured ceramics of composition (LaMn_1?x Al _x O₃)_0.9(Al₂O₃)_0.1 has been synthesized by conventional solid state reaction at 1350?°C. The X-ray diffraction patterns showed that for all the samples, the substitution of manganese by aluminum up to x?=?0.1 preserved the rhombohedral perovskite LaMnO₃-like phase. For x?=?0.2, apart from the LaMnO₃-like structure, a second perovskite phase based on the cubic LaAlO₃ structure was formed. For x?=?0.3 and 0.4, the phase present was LaAlO₃ -type structure. The grain sizes of the sintered body detected by scanning electron microscope were decreased with increasing Al₂O₃ content. The resistivity increases with increasing the Al content. The obtained values of ρ _25?°C and B _25/50 and E _a are in the range of 10–13103 Ω cm, 1813–2794 K, 0.156–0.241 eV, respectively. The resistance variation (ΔR/R) was <0.241% and the minimum value (0.0483%) was obtained for aging at 125?°C at 500 h. The aim of this work was explored new composite ceramics materials, which could be used as potential candidates for wide temperature range from ?100 to 500?°C thermistors applications.