Low temperature sintering and dielectric properties of Ba<Subscript>3</Subscript>(VO<Subscript>4</Subscript>)<Subscript>2</Subscript> microwave ceramics using Co<Subscript>2</Subscript>O<Subscript>3</Subscript> additives

The Ba₃(VO₄)₂–x wt% Co₂O₃ (x?=?0.5–5) ceramics were prepared by the solid state reaction method in order to reduce the sintering temperature. The effects of the Co₂O₃ additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of Ba₃(VO₄)₂ ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. As a result, the Q?×?f value of 54,000 GH, the ε _r of 14.6 and the τ_f value of +58.5 ppm/°C were obtained in the sample of the Ba₃(VO₄)₂–3 wt% Co₂O₃ ceramic sintered at the temperature of 925 °C, which is capable to co-fire with electrode metal of high conductivity such as Ag (961 °C). Moreover, the Q?×?f values of the sample with Co₂O₃ higher than that of 3 wt% additions decreased because of the formation of Ba₂V₂O₇ phase.     

Low-temperature sintering and microwave dielectric properties of Mg<Subscript>3</Subscript>B<Subscript>2</Subscript>O<Subscript>6</Subscript>-LMZBS composites

The Mg₃B₂O₆ ceramics with lithium magnesium zinc borosilicate (LMZBS) glass were prepared at a lower sintering temperature. The effects of the glass addition on the densification, phase development, microstructure and microwave dielectric properties of the Mg₃B₂O₆ ceramics were investigated. The addition of LMZBS glass improved the densification and lowered the sintering temperature of Mg₃B₂O₆ ceramics from 1,300 to 950 °C. X-ray diffraction patterns showed that Mg₃B₂O₆ transformed into Mg₂B₂O₅ and a new phase, Li₂ZnSiO₄, crystallized from the glass phase. Because of the high dielectric performance of these phases, Mg₃B₂O₆ mixed with 55 wt% LMZBS sintered at 950 °C for 3 h had ε_r = 6.8, Q × f = 50,000 GHz, and τ_f = ?64 ppm/°C at 7.28 GHz. The chemical compatibility of ceramic-glass composites with Ag was also investigated for LTCC.     

Effects of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> additive on sintering behavior and microwave dielectric properties of ZnTa<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

ZnTa₂O₆ ceramics with various amount of Al₂O₃ additive were synthesized by a conventional mixed-oxide route. The grain growth of ZnTa₂O₆ ceramics was accelerated with Al₂O₃ additive. However, excessive addition (>1.0 wt%) of Al₂O₃ leaded to abnormal grain growth. With Al₂O₃ addition, the Al₂O₃ additive did not solubilized into ZnTa₂O₆ structure but resulted in forming the second phase. The Al₂O₃ addition resulted in the lower sintering temperature of ZnTa₂O₆ ceramics and improved microwave dielectric properties. The dielectric constant (ε_r) of the samples did not change much and ranged from 32.41 to 34.33 with different amount of Al₂O₃ addition. The optimized quality factor (Q × f) was higher than 70,000 GHz as a result of the denser ceramics. The temperature coefficient of resonant frequency (τ _f ) of the doped ZnTa₂O₆ ceramics could be optimized to near-zero.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>3</Subscript>Mg<Subscript>2</Subscript>NbO<Subscript>6</Subscript> ceramics for LTCC application

The Li₃Mg₂NbO₆ ceramics doped with ZnO-B₂O₃-SiO₂ (ZBS) additives were synthesized via the conventional solid-state reaction process. The influence of ZBS additives on phase composition, sintering behavior, microstructure and microwave dielectric properties of Li₃Mg₂NbO₆ ceramics were investigated in detail. The XRD patterns showed that the sintered specimen presented a single phase and no secondary phase appeared. We found that proper amount of ZBS additives could significantly reduce the sintering temperature from 1250 to 925?°C and promote the densification of Li₃Mg₂NbO₆ ceramics. The ε_r and Q?×?f value were strongly affected by bulk density and grain size, respectively. As ZBS content increased, the τ_f value shifted toward negative direction. In summary, excellent microwave dielectric properties of ε_r?~?14.84, Q?×?f?~?73,987 GHz, τ_f?~??16.05 ppm/°C could be obtained in 0.5 wt.% ZBS modified sample when sintered at 925?°C for 4 h. Furthermore, the material was compatible with Ag electrode, demonstrating that it would be a promising candidate material for LTCC application.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.     

Synthesis of Ba<Subscript>3</Subscript>ZnNb<Subscript>2</Subscript>O<Subscript>9</Subscript>−Sr<Subscript>3</Subscript>ZnNb<Subscript>2</Subscript>O<Subscript>9</Subscript> solid solution and their dielectric properties

Oxides of the type, Ba_3-xSr_xZnNb₂O₉ (0 ≤x ≤3), were synthesized by the solid state route. Oxides calcined at 1000°C show single cubic phase for all the compositions. The cubic lattice parameter (a) decreases with increase in Sr concentration from 4.0938(2) forx = 0 to 4.0067(2) forx = 3. Scanning electron micrographs show maximum grain size for thex = 1 composition (∼ 2 μm) at 1200°C. Disks sintered at 1200°C show dielectric constant variation between 28 and 40 (at 500 kHz) for different values of x with the maximum dielectric constant atx = 1.     

The optimization of microwave dielectric properties of the Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> ceramic by the phase purity control

In recent reports, the microwave dielectric properties of Li₂ZnTi₃O₈ ceramic deviate largely from the optimal value. In this paper by the Rietveld refinement method, the co-existence of the secondary phases is confirmed which is due to the zinc volatilization. Thus, the excessive ZnO addition is introduced to obtain a high purity Li₂ZnTi₃O₈ phase. Microwave dielectric properties are theoretically calculated to prove the above statement, based on the property indices of these phases. The calculated result is consistent to the measured data, with relative deviation around 5%. The optimized properties make the ceramic a promising ceramic candidate for the microwave applications.     

Microwave dielectric properties of Bi(Sc<Subscript>1/3</Subscript>Mo<Subscript>2/3</Subscript>)O<Subscript>4</Subscript> ceramics for LTCC applications

A novel microwave dielectric ceramics Bi(Sc_1/3Mo_2/3)O₄ with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc_1/3Mo_2/3)O₄ ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO₄ ^2? tetrahedra. The dielectric loss of Bi(Sc_1/3Mo_2/3)O₄ ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc_1/3Mo_2/3)O₄ ceramic sintered at 875 °C/4 h, with dielectric constant?~?25, Q?×?f ~?51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~???70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

The effect of sintering temperature on magnetic and dielectric properties of Ho<Subscript>3</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> ceramics

Ho₃Fe₅O₁₂ ceramics were fabricated by the solid-state reaction method. The results revealed an increase of the grain size, dielectric constant, and dielectric loss, while a decrease of the remnant magnetization and coercive field with increasing sintering temperature. A dielectric relaxation behavior was observed, which might be associated with the charge carrier hopping between Fe²⁺ and Fe³⁺. A cole–cole fitting to loss peaks revealed a dependence of the activation energy and the broaden factor on the relative density of the samples. Furthermore, at appropriate frequencies, the 1250 °C-sintered samples showed high dielectric constant, low dispassion, and good temperature stability around room temperature.     

Optimized sintering properties and temperature stability of MgZrTa<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics with CuO addition for microwave application

Microwave dielectric ceramics CuO–modified MgZrTa₂O₈ were synthesized by the conventional solid-state reaction method. The effects of CuO additives on the sintering characteristics and microwave dielectric properties have been investigated. With CuO addition, the sintering temperature of MgZrTa₂O₈ ceramics can be effectively lowered from 1475 to 1375 °C without decreasing its dielectric properties obviously and the temperature coefficient of the resonant frequency of MgZrTa₂O₈ ceramics have been optimized to near-zero. The crystalline phase exhibited a wolframite crystal structure and no second phase was detected at low addition levels. The grain growth of CuO–modified MgZrTa₂O₈ ceramics was accelerated due to liquid phase effect. The relative dielectric constants (ε_r) were correlated with apparent density and were not significantly different for all levels of CuO concentration. The quality factors (Q?×??) and temperature coefficient of resonant frequency (τ_?), which were strongly dependent on the CuO concentration, were analyzed by the grain size and the dielectric constant respectively. A best Q?×?? value of 116400 GHz and τ_? value of ?6.19 ppm/℃ were obtained for specimen with 0.05 wt% CuO addition at 1375 °C.     

Low-temperature sintering and microwave dielectric properties of TiO<Subscript>2</Subscript>-based LTCC materials

Temperature stable high-K LTCC material was prepared. The influence of fabrication process on the crystalline phases, microstructures and microwave dielectric properties of TiO₂-Bi₂O₃-CuO ceramics were investigated. The crystalline phases and microstructures of TiO₂-Bi₂O₃-CuO ceramics were investigated by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. It was found that rutile TiO₂ phase and Bi₂Ti₄O₁₁ phase co-existed in the TiO₂-Bi₂O₃-CuO ceramics. Separate TiO₂ grains and Bi₂Ti₄O₁₁ grains distributed uniformly in the ceramic matrix. The composition 0.92TiO₂-0.08Bi₂Ti₄O₁₁ with 2 wt% CuO addition that was sintered at 900 °C for 2 h showed high dielectric constant (ε_r ~ 81), high quality factor (Q × f ~ 3,500 GHz) and near zero temperature coefficient of resonant frequency (τ_f ~ −5.1 ppm/°C), meanwhile the compatibility test showed that it could co-fire with silver electrode. The processing-microstructure-property interrelationship was also studied.     

Investigation of Li<Subscript>2</Subscript>Zn<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>-based temperature stable dielectric ceramics for LTCC applications

A low temperature co-fired ceramic (LTCC) was fabricated at 910 °C /2 h from the powder mixture of Li₂Zn₃Ti₄O₁₂, TiO₂ and a B₂O₃–La₂O₃–MgO–TiO₂ glass (BLMT), and the influence of TiO₂ on microstructure and dielectric properties of the composite was investigated in the composition range (wt%) of 20BLMT–(80???x)Li₂Zn₃Ti₄O₁₂–xTiO₂ (x?=?0, 2.5, 5, 7.5, 9 and 10). The results showed that all samples consisted of Li₂Zn₃Ti₄O₁₂, TiO₂, LaBO₃ and LaMgB₅O₁₀ phase. And LaBO₃, LaMgB₅O₁₀ and a small amounts of TiO₂ were crystallized from BLMT glass during sintering process. As x increases, dielectric constant and temperature coefficient of resonance frequency of the composites demonstrated gradually increase, whereas the quality factor of the sample of x?=?0 wt% was about 41,500 GHz and the ones maintained stable at a high level of 49,000–51,000 GHz for other samples. The composite with x?=?9 wt% had an optimal microwave dielectric properties with the dielectric constant of 20.2, quality factor of 50,000 GHz and temperature coefficient of resonant frequency of ??0.33 ppm/°C.     

Low temperature preparation of the Zn<Subscript>2</Subscript>SiO<Subscript>4</Subscript> ceramics with the addition of BaO and B<Subscript>2</Subscript>O<Subscript>3</Subscript>

The Zn₂SiO₄ ceramics with the addition of BaO and B₂O₃ are fabricated by traditional solid-state preparation process at a sintering temperature of 900 °C. The introduction of BaO and B₂O₃ to the binary system ZnO-SiO₂ is achieved by adding 10 and 20 wt. % flux BB to the mixed ZnO-SiO₂ ceramic powders pre-sintered at 1,100 °C, respectively. The chemical composition of the flux BB (50 wt.%BaO-50 wt.% B₂O₃) is located at a liquid phase zone with a temperature range of about 869–900 °C in the binary diagram BaO-B₂O₃. In addition, the introduction of BaO and B₂O₃ to the binary system ZnO-SiO₂ is also achieved by the means of a chemical combination of H₂SiO₃, H₃BO₃, ZnO and Ba(OH)₂·8H₂O, which can result in the formation of the hydrated barium borates with low melting characteristics. In turn, by the liquid sintering aid of the barium borate melts, the preparation process of the Zn₂SiO₄ ceramics can be further simplified. In the two preparation methods, the Zn₂SiO₄ ceramics with the 1.5–2.0 ZnO/SiO₂ molar ratios and the addition of a 10 wt. % flux BB can show good dielectric properties whereas the bending strength mainly depends on the microstructure of the Zn₂SiO₄ ceramics and SiO₂ content in the composition of the specimen.     

Dielectric properties of Pb(Zn<Subscript>1/3</Subscript>Ta<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-introduced (Ba,Pb)TiO<Subscript>3</Subscript> ceramic system

Ceramic powders of the Pb(Zn_1/3Ta_2/3)O₃-introduced BaTiO₃–PbTiO₃ system were prepared using a B-site precursor method. Perovskite formation tendencies of the system compositions were determined by X-ray diffraction. Weak-field low-frequency dielectric properties of the sintered ceramics were investigated. Dielectric constant spectra were further analyzed in terms of diffuseness. Internal microstructures of the ceramics were also examined.