新型陶瓷刀具材料JX—2—I组合增韧补强机理的实验研究

本文研究了新型陶瓷刀具材料ＪＸ－２－Ｉ（Ａｌ２Ｏ３／ＳｉＣｐ／ＳｉＣｗ）的力学性能，同Ａ（Ａｌ２Ｏ３），ＡＰ（Ａｌ２Ｏ３／ＳｉＣｐ），ＡＷ（Ａｌ２Ｏ３／ＳｉＣｗ）和ＪＸ－１（Ａｌ２Ｏ３／ＳｉＣｗ）材料相比，ＪＸ－２－Ｉ具有较高的抗弯强度（σｂｂ）和断裂韧性ＫＩＣ，研究结果表明，在ＪＸ－２－Ｉ陶瓷刀具材料中确实存在增韧补强原协同作用，陶瓷刀具材料ＪＸ－２－Ｉ的主要增韧机理是界面解离，裂纹偏转和晶须拔     

新型陶瓷刀具材料JX－2－Ⅰ组合增韧补强机理的实验研究

本文研究了新型陶瓷刀具材料ＪＸ－２－Ⅰ（Ａｌ＿２Ｏ＿３／ＳｉＣｐ／ＳｉＣｗ）的力学性能，同Ａ（Ａｌ＿２Ｏ＿３）、ＡＰ（Ａｌ＿２Ｏ＿３／ＳｉＣｐ）、ＡＷ（Ａｌ＿２Ｏ＿３／ＳｉＣｗ）和Ｊｘ－１（Ａｌ＿２Ｏ＿３／ＳｉＣｗ）材料相比，ＪＸ－２－Ⅰ具有较高的抗弯强度（σ＿（ｂｂ））和断裂韧性Ｋ＿（Ｉｃ）；研究结果表明，在ＪＸ－２－Ⅰ陶瓷刀具材料中确实存在增韧补强的协同作用，陶瓷刀具材料ＪＸ－２－Ⅰ的主要增韧机理是界面解离、裂纹偏转和晶须拔出。     

新型复相陶瓷刀具材料JX—2—I的界面结构及其对材料性能的影响

本文利用ＴＥＭ研究了新型复相陶瓷刀具材料ＪＸ－２－Ｉ的界面结构，结果表明，在ＪＸ－２－Ｉ中Ａｌ２Ｏ３／ＳｉＣｗ（氧化铝／碳化硅晶须）界面和Ａｌ２Ｏ３／ＳｉＣｐ（碳化硅颗粒）界面结合良好，形成了具有较高强度的微观结构，发现在ＳｉＣｗ，ＳｉＣｐ和Ａｌ２Ｏ３晶粒上均有位错产生，在ＳｉＣｐ和Ａｌ２Ｏ３上有孪晶产生，分析表明，位错和孪晶的产生均吸收大量的断裂能，提高材料的断裂韧性，改善ＪＸ－２－Ｉ材料的整体     

新型陶瓷刀具材料JX－2－I界面结构的实验研究

利用ＴＥＭ和电子衍射图谱分析，研究了新型陶瓷刀具材料ＪＸ－２－Ｉ的界面微观结构。ＴＥＭ分析表明，ＪＸ－２－Ｉ刀具材料的界面结合状态较好，Ａｌ＿２Ｏ＿３／ＳｉＣｗ界面上形成了具有较高强度的“钢筋混凝土”结构，在Ａｌ＿２Ｏ＿３／ＳｉＣｗ和Ａｌ＿２Ｏ＿３／ＳｉＣｐ界面上没有剧烈的化学反应发生；通过ＴＥＭ和电子衍射图分析，发现在Ａｌ＿２Ｏ＿３的晶粒边界上有尖晶石（ＭｇＡｌ＿２Ｏ＿４）生成，这有利于控制Ａｌ＿２Ｏ＿３晶粒的长大，提高复合材料的强度。     

Al_2O_3颗粒对Al-Zn合金激光快凝组织的影响

通过比较Ａｌ－Ｚｎ合金和Ａｌ_２Ｏ_（３ｐ）／Ａｌ－Ｚｎ复合材料的激光重熔组织。分析Ａｌ_２Ｏ_３颗粒对Ａｌ－Ｚｎ合金激光快凝组织的影响规律。实验结果表明,Ａｌ_２Ｏ_３颗粒可以显著细化激光熔区的晶粒。基于凝固界面与颗粒交互作用的理论分析,给出了晶粒细化的临界条件。     

新型复相陶瓷刀具材料JX－2－Ⅰ的界面结构及其对材料性能的影响

本文利用ＴＥＭ研究了新型复相陶瓷刀具材料Ｊｘ－２－Ⅰ的界面结构，结果表明，在Ｊｘ－２－Ⅰ中Ａｌ＿２Ｏ＿３／ＳｉＣｗ（氧化铝／碳化硅晶须）界面和Ａｌ＿２Ｏ＿３／ＳｉＣｐ（碳化硅颗粒）界面结合良好，形成了具有较高强度的微观结构；发现在ＳｉＣｗ、ＳｉＣｐ和Ａｌ＿２Ｏ＿３晶粒上均有位错产生，在ＳｉＣｐ和Ａｌ＿２Ｏ＿３上有孪晶产生；分析表明，位错和孪晶的产生均吸收大量的断裂能，提高材料的断裂韧性，改善ＪＸ－２－Ⅰ材料的整体性能。     

声表面波大带宽滤波器的设计

报道在Ｙ旋１２７．８６°Ｘ传ＬｉＮｂＯ＿３基片上采用１／８λ＿０，５／８λ＿０结构的切指加权换能器的声表面波滤波器，成功地研制了中心频率为４０ＭＨｚ，３ｄＢ带宽为２０ＭＨｚ，矩形系数（Δｆ＿４０ｄＢ／Δｆ＿３ｄＢ）为１．４８，带内波动＜１．２ｄＢ，带外抑制＞４０ｄＢ．插入损耗＜３８ｄＢ，相对带宽（Δｆ＿－３ｄＢ／ｆ＿０）大于５０％的滤波器。     

GaAs衬底层选择性腐蚀技术

本文在ＧａＡｓＧａＡｌＡｓ选择性腐蚀的基础上进行了腐蚀ＧａＡｓ衬底层获得ＧａＡ／ＧａＡｌＡｓ外延层薄膜的二次腐蚀技术。最终选用了Ｃ３Ｈ４（ＯＨ）（ＣＯＯＨ）３．Ｈ２Ｏ－Ｈ２Ｏ２系选择性腐蚀液和Ｈ２ＳＯ４－Ｈ２Ｏ２系腐蚀液，获得了快速，可控制，重复性好的可全部可局部去除衬底的腐蚀方法。     

Al_2O_3-WO_3材料的激光合成研究

采用大功率ＣＯ２激光器合成出了Ａｌ２Ｏ３－ＷＯ３陶瓷材料。测量其阻－温特性表明合成样品具有线性的ＮＴＣ热敏电阻特性，微观分析结果证明激光合成样品由Ａｌ２Ｏ３、ＷＯ３、Ａｌ２（ＷＯ４）３、ＡｌｘＷＯ３四相组成，而起导电作用的是ＡｌｘＷＯ３这一非平衡反应产物。常规烧结工艺合成Ａｌ２Ｏ３－ＷＯ３陶瓷材料所得试样没有线性的ＮＴＣ热敏电阻特性。     

电容器铝箔交流腐蚀过程中腐蚀膜形成条件分析

交流电解腐蚀扩面技术是低压铝电解电容器小型化的关键。分析了电极铝箔在盐酸溶液中交流负半周液相传质过程及交流电频率对电极表面几何结构的影响，结果表明，如果本体盐酸浓度ｃ０，外加阴极电流密度ｉａｐｐｌ和交流电的频率ｆ满足：｛ｃ０｝ｍｏｌ·Ｌ－１／｛ｉａｐｐｌ｝Ａ·ｃｍ－２≤５８７｛ｆ｝Ｈｚ·（｛ｆ｝Ｈｚ＋１０．４）－２，则Ａｌ３＋就可能沉淀形成腐蚀膜。控制盐酸浓度，阴极电流密度和交流电频率可改善腐蚀膜品质。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.