A Low-Power Low-Noise Amplifier for K-Band Applications

This study presents a high performance K-band low noise amplifier. By utilizing transformer feedback at the input stage, an excellent noise figure (NF) of 4.3 dB is obtained at 22 GHz. With the current-reused technique between the two stages, the amplifier achieves a maximum power gain of 10.1 dB under a supply voltage of 1.8 V and a power consumption of only 7.2 mW. The proposed LNA has comparable NF and gain, while it can operate under the lowest power among the published works in 0.18 $mu{rm m}$ CMOS technology for K-band applications.      

A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 $mu{rm m}$ SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is $-$11.4 dBm at 77 GHz with low power consumption of only 37 mW.      

用于脑电信号记录的低噪声低功耗放大器

为了满足脑电信号(EEG)记录阵列的应用需求,设计了一种全差分的低噪声、低功耗放大器电路.该电路利用亚阈值区晶体管作为伪电阻,与输入电容和反馈电容形成高通通路,有效抑制了输入信号的直流失调电压,无需片外隔直电容,实现了电路的全集成.放大器中的跨导放大器(OTA)采用亚阈值晶体管进行设计,实现了较大的输出摆幅、良好的功耗和噪声性能.放大器电路采用SMIC 130 nm 1P8M混合信号工艺实现,芯片面积0.6 mm2.测试结果表明,在电源电压0.6V时,放大器可处理信号带宽为10 Hz～7 kHz,等效输入噪声的均方根值为3.976 μV,噪声有效因子为3.658,总功耗仅为2.4 μW.     

基于IEEE802.11a标准的SiGe HBT LNA的设计

基于IEEE802.11a标准描述了一款SiGe HBT低噪声放大器(LNA)的设计.为适应该标准的要求,给出了噪声、功率增益及稳定性的优化方法.选用SiGe HBTs作为有源元件,采用T型输入、输出匹配网络设计了电路,并用安捷伦ADS-2006A软件对噪声系数、增益等各项指标进行了仿真.最终在频率为5.2 GHz下,LNA噪声系数F为1.5 dB,增益S21达到12.6 dB,输入、输出反射系数S11和|S22较好,在工作频带内小于-10 dB,LNA性能良好.     

A High Gain,Low-Power Low-Noise Amplifier for Ultra-Wideband Wireless Systems

This paper presents a high gain, low-power common-gate ultra-wideband low-noise amplifier employing a simple configuration for wideband input matching. In our design, a series resistance-inductance network at the source combines with the parasitic capacitance of a transistor to form a parallel RLC input matching configuration in the common-gate input stage. Because of the additional resistance, this matching configuration partially alleviates the restriction of transconductance of the input transistor and also provides wideband matching. The low-noise amplifier was fabricated using the TSMC 0.18  \(\mu \) m technology with an average noise figure of 3.75 dB, a power gain of 18.68 dB with a ripple of \(\pm \)  0.8 dB, an input return loss less than \(-10\)  dB from 3 to 7.6 GHz, and DC power consumption of 8.56 mW, including the output buffer with a 1.8 V supply voltage.     

一款适用于WCDMA标准的大动态范围SiGe HBT可变增益放大器设计

第三代移动通信标准WCDMA要求放大器增益可调,并且增益动态范围较大.根据这一要求给出了一种基于SiGe HBT具有高动态范围的可变增益放大器(VGA)设计.放大器为三级级联结构,第一级为输入缓冲级,第二级为增益控制级,最后为放大级.VGA的增益控制通过调整第二级的偏置实现.VGA在1.95 GHz频率下,在0～2.7 V增益控制电压变化下,具有44 dB增益变化范围,最大增益49 dB.在最大增益处最小噪声系数为2.584 dB,输入输出电压驻波比低于2,性能良好.     

A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications

To employ the distributed amplification technique for the design of ultra-wide-band low-noise amplifiers, the poor noise performance of the conventional distributed amplifiers (DAs) needs to be improved. In this work, the terminating resistor of the gate transmission line, a main contributor to the overall DA's noise figure, is replaced with a resistive-inductive network. The proposed terminating network creates an intentional mismatch to reduce the noise contribution of the terminating network. The degraded input matching at low frequencies can be tolerated for ultra-wide-band applications as they need to operate above 3 GHz. Implemented in a 0.13 mum CMOS process, the proposed DA achieves a flat gain of 12 dB with an average noise figure of 3.3 dB over the 3- to 9.4-GHz band, the best reported noise performance for a CMOS DA in the literature. The amplifier dissipates 30 mW from two 0.6-V and 1-V dc power supplies.     

5 GHz无线局域网的锗硅异质结晶体管功率放大器

采用IBM 0.35 μm SiGe BiCMOS工艺设计了一种应用于5 GHz无线局域网的射频功率放大器.功率放大器工作在A类状态,由两级共发射极放大电路组成,并利用自适应偏置技术改善了功放的线性度.输入输出和级间匹配网络都采用片内元件实现.在3.3 V的电源电压下,模拟得到的功率增益为32.7dB;1dB压缩点输出功率为25.7 dBm;最大功率附加效率(PAE)为15%.     

TiSi2在微波低噪声SiGe HBT中的应用

通过在SiGe HBT外基区和多晶发射极上制作TiSi2,从而使器件的高频噪声系数得到进一步降低.以PD=200mW的SiGe HBT为例,采用TiSi2工艺的噪声系数典型值为F=1.6dB@1.1GHz,明显低于无TiSi2工艺SiGe HBT的2.0dB@1.1GHz,且频率越高,二者差别越大.     

一种用于电视调谐器的宽带CMOS低噪声放大器设计

介绍了一种宽带CMOS低噪声放大器设计方法,采用噪声抵消技术消除输入MOS管的噪声贡献.芯片采用TSMC 0.25μm 1P5M RF CMOS工艺实现.测试结果表明:在50～860MHz工作频率内,电压增益约为13.4dB;噪声系数在2.4～3.5dB之间;增益1dB压缩点为-6.7dBm;输入参考三阶交调点为3.3dBm.在2.5V直流电压下测得的功耗约为30mW.     

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器

报道了一种性能良好的SiGe功率放大器,具有用于无线通信的前景.在B类模式下工作时,输出功率可以达到30dBm.在AB类模式下,电源电压为4V工作时,1dB压缩点输出功率(P1dB)为24dBm,输出功率三阶交截点(TOI)为39dBm.最大的功率附加效率(PAE)和在1dB压缩点的功率附加效率分别达到34%和25%.处理CDMA信号时的邻道功率抑制超过42dBc,符合IS95标准.     

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器

报道了一种性能良好的SiGe功率放大器,具有用于无线通信的前景.在B类模式下工作时,输出功率可以达到30dBm.在AB类模式下,电源电压为4V工作时,1dB压缩点输出功率(P1dB)为24dBm,输出功率三阶交截点(TOI)为39dBm.最大的功率附加效率(PAE)和在1dB压缩点的功率附加效率分别达到34%和25%.处理CDMA信号时的邻道功率抑制超过42dBc,符合IS95标准.     

一种用于电视调谐器的宽带CMOS低噪声放大器设计

介绍了一种宽带CMOS低噪声放大器设计方法,采用噪声抵消技术消除输入MOS管的噪声贡献.芯片采用TSMC 0.25μm 1P5M RF CMOS工艺实现.测试结果表明:在50～860MHz工作频率内,电压增益约为13.4dB;噪声系数在2.4～3.5dB之间;增益1dB压缩点为-6.7dBm;输入参考三阶交调点为3.3dBm.在2.5V直流电压下测得的功耗约为30mW.     

SiGe HBT超宽带低噪声放大器设计

采用ADS软件设计并仿真了一种应用于UWB标准的低噪声放大器。该低噪声放大器基于JAZZ 0.35μmSiGe工艺,工作带宽为3.1～10.6GHz。电路的输入极采用共发射极结构,利用反馈电感来进行输入匹配,第二级采用达林顿结构对信号提供合适的增益。使用ADS2006软件进行设计、优化和仿真。仿真结果显示,在3.1～10.6GHz带宽内,放大器的电源电压在3.3V时,噪声系数低于2.5dB,增益大于24dB,功耗为28mV,输出三阶交调为17dBm。     

应用于WLAN InGaP/GaAs HBT线性功率放大器

设计了一款基于2μm InGaP/GaAs HBT工艺的移动通信用高线性功率放大器,应用于移动终端WLAN 802.11b/g/n 2.4~2.5GHz。整个放大器芯片由三级放大电路构成,芯片面积为1.9mm×1.7mm。在VCC=Vbias=+5V、VReg=VPdown=+2.85V双电源供电条件下,测试频点为2.45GHz时,线性增益为35dB,1dB压缩点处输出功率为34.5dBm,此时效率为37.5%。输出功率为27dBm时,EVM(误差矢量幅度)值小于3%(输入信号为WLAN 802.11g 64QAM 54 Mb/s),可以满足WLAN应用对线性度的需求。     

应用于IEEE 802.11 ac的高线性InGaP/GaAs HBT功率放大器

针对应用于无线局域网IEEE 802.11ac标准的终端,通过采用自适应线性化偏置和宽带匹配技术,设计一种高线性度的InGaP/GaAs HBT功率放大器。芯片测试结果表明,在4.9~5.9GHz的工作频段内,该功率放大器小信号增益超过26.2dB,1dB压缩点输出功率超过29.1dBm,实现了在64正交振幅调制-正交频分复用输入信号下,误差矢量幅度在3%时超过19dBm的线性输出功率。     

应用于射频前端的高Q值SiGe HBT有源电感

针对传统的共基-共射(CB-CE)回转器有源电感的品质因子Q值低等缺点,应用Cascode结构把CB-CE有源电感改进为共基-共射-共基(CB-CE-CB)有源电感,推导出等效电路及等效阻抗表达式。最后基于Jazz 0.35μm SiGe BiCMOS工艺,利用ADS软件完成电路设计与仿真,应用Cadence Virtuoso平台完成版图设计。改进之后的有源电感,通过改变外加偏置条件,实现了电感值和品质因子Q值的可调,电感值可调范围为0.35～2.72 nH,Q值最大值可达1 172,版图面积仅为51μm×35μm。该有源电感应用于射频电路中,可取代无源电感。与无源电感相比,品质因子Q值明显提高,版图面积大大减小,更利于集成。     

SiGe HBT低噪声放大器的设计与制造

该文设计和制作了一款单片集成硅锗异质结双极晶体管(SiGe HBT)低噪声放大器(LNA)。由于放大器采用复合型电阻负反馈结构,所以可灵活调整不同反馈电阻,同时获得合适的偏置、良好的端口匹配和低的噪声系数。基于0.35 m Si CMOS平面工艺制定了放大器单芯片集成的工艺流程。为了进一步降低放大器的噪声系数,在制作放大器中SiGe器件时,采用钛硅合金(TiSi2)来减小晶体管基极电阻。由于没有使用占片面积大的螺旋电感,最终研制出的SiGe HBT LNA芯片面积仅为0.282 mm2。测试结果表明,在工作频带0.2-1.2 GHz内,LNA噪声系数低至2.5 dB,增益高达26.7 dB,输入输出端口反射系数分别小于-7.4 dB和-10 dB。     

一种5.0~9.3 GHz低功耗宽带低噪声放大器设计

针对Wi-Fi 6、Wi-Fi 6E(5 GHz、6 GHz)的低功耗、宽带宽等无线局域网(WLAN)设备需求,基于65 nm CMOS工艺设计了一款两级低功耗宽带低噪声放大器(LNA)。电路第一级采用结合互补共源电路的共源共栅结构,通过电感峰化技术和负反馈技术的运用,提高输入跨导,降低噪声,并拓展带宽和提高增益平坦度。第二级在共漏极缓冲器基础上引入辅助放大结构、电感峰化技术,实现抵消第一级共源管的噪声并拓展带宽。电路采用提出的前向衬底自偏置技术,以降低电路对电源电压的依赖,整体电路实现两路电流复用,从而有效降低了功耗。仿真结果表明,在5~9.3 GHz频带内LNA的S21为17.8±0.1 dB,S11小于-9 dB、S22小于-11.9 dB,噪声系数小于1.34 dB。在0.8 V电压下整体电路功耗为5.3 mW。     

An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator

This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO) implemented in a commercially-available SiGe heterojunction bipolar transistor BiCMOS technology. The concurrent operation of these two circuits on the same silicon die results in -33dB of coupling between the PA's output and the VCO's output. Different testing configurations are considered to verify the dominant path of the coupling. These results highlight the potential challenges for silicon-based monolithic systems targeting microwave operational frequencies