碳化硅—石墨复合材料

碳化硅－石墨复合材料广泛用于各个工业部门。这种材料可加工密封环、摩擦付、轴承等。它具有硬度高、密度高、抗热振性、耐磨性抗化学腐蚀性和自润滑性好等特点。     

化学气相沉积碳化硅薄膜的研究

在较低温度（１３６０℃）下采用化学气相沉积法分别在单晶硅和单晶碳化硅基体上成功地生成多晶和单晶碳化硅膜。用氢气作为载体，反应气相为硅烷为甲烷。当温度低于１３００℃时，生成膜的质量明显降低，易于脱离基体。１３６０℃温度下沉积生成的碳化硅膜与基体附着力强，不易被磨擦掉。ＸＲＤ和ＩＲ分析表明生成的ＳｉＣ膜为六方结构型的ａ－ＳｉＣ。运用同位素１２Ｃ和１３Ｃ进行了在Ｓｉ１２Ｃ单晶基体上外延生长Ｓｉ１３Ｃ膜层     

碳化硅微粉中除铁方法的研究

本文主要研究了除去碳化硅微粉中Fe2O3的方法及最佳条件。     

碳化硅—石墨陶瓷涂层热辐射性能的研究

阐述了以碳化硅—石墨为基料的高辐射陶瓷涂层的性能及应用效果。这种材料具有高辐射率、高粘结强度、抗热震性能好等特点,是一种高效节能的陶瓷新材料。     

利用石墨化辅助原料的余热生产碳化硅

1.前言石墨化炉是生产石墨电极的关键窑炉之一,但能耗高,目前国内石墨化炉节能的有效途径是采用新型的内串石墨化工艺,而对那些直流艾奇逊石墨化炉的能耗应该如何降低则是摆在炭素厂面前的大事,除了装炉工艺、供电和窑炉的配匹等方面要求合理以外,利用石墨化炉捕助原料余热生产副产品碳化硅,增加产值,也是石墨化炉降低单位产值能耗的一大措施。木实验的目的是研究在现有石墨化炉生产条件下如何最大限度的增产碳化硅。如探讨保温料的配料比,选择电阻料和保温料的种     

金刚石与石墨的物理分离技术研究

在对金刚石与石墨混合物的相态及其特性分析的基础上。讨论了重液的种类选择，重液密度的设计与计算，加入表面改性剂对重液的稳定性及分离效果的影响。采用重液选矿法来分离金刚石与石墨，并达到了预期的效果。     

碳化硅及其复相陶瓷高温摩擦化学的研究

研究了碳化硅及其复相陶瓷自对偶摩擦在空气中从室温到 12 0 0℃的摩擦磨损特性和摩擦化学 ,其摩擦学特性与摩擦试验温度和载荷密切相关 ,其磨损特性依试验条件不同呈现基本不变、增加和减少的规律 ,由摩擦的摩擦化学反应物———无定形SiO2 构成的平滑薄膜层的形成与破坏是主要原因     

氯碱厂石墨换热器的化学清洗

盐酸装置石墨换热器的列管内的结垢是一种以Fe2O3为主要成分的难溶垢,讨论了用SH-003清洗方法和在呼和浩特化工总厂石墨换盐器的清洗应用。结果表明,SH-005化学清洗方法是清除这类污垢的有效方法。     

国外先进结构陶瓷领域碳化硅粉体的应用技术及市场

我国碳化硅粉体产量占世界首位。碳化硅粉体在先进结构陶瓷中有广泛的用途，国外工业发达国家的状况值得分析和借鉴。分析了国外先进陶瓷领域碳化硅粉体的应用技术及市场现状，并对市场走向、新技术、新用途进行了展望。     

高温处理对渗硅碳化硅性能的影响

研究了全碳粉反应渗硅碳化硅（ＰＣＲＢＳＣ）材料在１７００℃高温氩气氛中４ｈ的处理,研究结果表明：ＰＣＲＢＳＣ材料的结构对高温处理后的强度有很大的影响,特别是游离硅ｆｓｉ、游离碳ｆｃ的含量明显影响高温处理后ＰＣＲＢＳＣ材料的抗折强度。     

堇青石/碳化硅复相陶瓷窑具抗氧化性能研究

本文对碳化硅、堇青石的优点整合制备碳化硅/堇青石复相陶瓷窑具,以力学性能变化为基础通过研究偏钒酸铵含量、金属硅粉含量、烧成温度等3个方面对堇青石/碳化硅复相窑具材料抗氧化性能进行研究分析,并通过X-射线衍射(XRD)分析,复相陶瓷窑具中并未有明显的氧化物如SiO2等杂质相出现。     

将碳化硅用于催化剂载体的研究进展

碳化硅陶瓷材料由于具有耐磨、耐蚀、高温强度高、高热导、宽禁带等优良特性，被广泛应用于航空航天、石油化工、机械电子等领域。如果能攻克其比表面积低的缺陷，还将是一种催化剂载体的理想候选材料，它可被应用于一些高温、强腐蚀等苛刻反应条件中。而目前国内在这方面的研究尚未见公开的报道。本文将对近年来高比表面碳化硅材料的研究工作进行小结，阐述其制备原理、方法及应用，同时阐述了本研究小组下一步的研究方向。     

凝胶注成形纳米碳化硅增韧氧化铝防弹陶瓷材料工程化研究及应用

本研究用单体(丙烯酰胺以后简称单体)、交联剂(N,N—亚甲基双丙烯酰胺以后简称交联剂)、氧化铝、纳米碳化硅等,使用分散剂丙烯酸和丙烯酸铵的共聚物,球磨后料浆颗粒D50(中位粒径)为2μm,体积固含量为55％的陶瓷料浆。在催化剂(N,N,N,,N,—四甲基乙二胺)、引发剂(硫代硫酸铵)条件下凝胶注成形氧化铝陶瓷坯体,干燥...     

Tribological Properties of Silicon Carbide and Silicon Carbide–Graphite Composite Ceramics in Sliding Contact

A monolithic SiC ceramic and two SiC–C composite ceramics containing 10 and 20 vol% graphite were fully densified with Al₄C₃ and B₄C as additives. The tribological properties of these materials were evaluated by sliding against sintered silicon carbide under dry conditions using two tribometers, block-on-ring and pin-on-disk, where wear occurred under low and high contact stresses, respectively. For all three materials, under low stress, worn surfaces were smooth and wear processes were dominated by tribochemical reaction; under high stress, worn surfaces were rough and wear processes were dominated by fracture and three-body abrasion. A lubricating effect of the graphite particles in the SiC–C composites was observed in all sliding tests. However, while the addition of graphite could concurrently result in a reduction in friction and an increase in wear resistance in the block-on-ring tests, the addition of graphite led to sharply enhanced wear rates despite the lowered coefficients of friction in the pin-on-disk tests. The cause for that difference was attributed to the effect of both the hardness of the materials and the contact stresses.     

Silicon Carbide/Silicon and Silicon Carbide/Silicon Carbide Composites Produced by Chemical Vapor Infiltration

Composites of SiC/Si and SiC/SiC were prepared from single yarns of SiC. The use of carbon coatings on SiC yarn prevented the degradation normally observed when chemically vapor deposited Si is applied to SiC yarn. The strength, however, was not retained when the composite was heated at elevated temperatures in air. In contrast, the strength of a SiC/C/SiC composite was not reduced after this composite was heated at elevated temperatures, even when the fiber ends were exposed.     

SiC晶须制备方法研究进展

碳化硅晶须的制备已有众多研究。目前,国内制备SiC晶须的方法主要可分为两大类:气相反应法和固体材料法,每种制备方法都有其各自的特点。本文重点介绍了这两种制备方法的合成机理,以及相关制备方法取得的一些实验研究成果。     

碳化硅的分析方法

阐述了碳化硅(SiC)的化学分析方法，比较和分析了中国和日本在SiC分析方面的差别，就加快中国SiC工业发展提出了建议。     

Process and Mechanical Properties of in Situ Silicon Carbide-Nanowire-Reinforced Chemical Vapor Infiltrated Silicon Carbide/Silicon Carbide Composite

A SiC nanowire/Tyranno-SA fiber-reinforced SiC/SiC composite was fabricated via simple in situ growth of SiC nanowires directly in the fibrous preform before CVI matrix densification; the purpose of the SiC nanowires was to markedly improve strength and toughness. The nanowires consisted of single-crystal β-phase SiC with a uniform ∼5 nm carbon shell; the nanowires had diameters of several tens to one hundred nanometers. The volume fraction of the nanowires in the fabricated composite was ∼5%. However, the composite did not show significant increase in strength and toughness, likely because of strong bonding between the nanowires and the matrix caused by the very thin carbon coating on the nanowires. Little debonding and pullout of SiC nanowires from the matrix were observed at the fracture surfaces of the composite.