Microstructure of Y2O3 Fluxed Hot-Pressed Silicon Nitride

Detailed microstructural analysis of a 10 mol% Y₂O₃ fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si₃N₄ grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y₂Si(Si₂O₃N₄), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si₃N₄ grains enveloped by Y₂Si(Si₂O₃N₄), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process.     

Carbothermic Synthesis of Monodispersed Spherical Si3N4/SiC Nanocomposite Powder

The synthesis and structure of a monodispersed spherical Si₃N₄/SiC nanocomposite powder have been studied. The Si₃N₄/SiC nanocomposite powder was synthesized by heating under argon a spherical Si₃N₄/C powder. The spherical Si₃N₄/C powder was prepared by heating a spherical organosilica powder in a nitrogen atmosphere and was composed of a mixture of nanosized Si₃N₄ and free carbon particles. During the heat treatment at 1450°C, the Si₃N₄/C powder became a Si₃N₄/SiC composite powder and finally a SiC powder after 8 h, while retaining its spherical shape. The composition of the Si₃N₄/SiC composite powder changed with the duration of the heat treatment. The results of TEM, SEM, and selected area electron diffraction showed that the Si₃N₄/SiC composite powder was composed of homogeneously distributed nanosized Si₃N₄ and SiC particles.     

High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Pressureless Sintering of α-Si3N4 Porous Ceramics Using a H3PO4 Pore-Forming Agent

A new method for preparing high bending strength porous silicon nitride (Si₃N₄) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H₃PO₄) as the pore-forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X-ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si₃N₄ ceramics are investigated, as a function of the content of H₃PO₄. The resultant high porous Si₃N₄ ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H₃PO₄ and by the continous reaction of SiP₂O₇ binder, which could bond on to the Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.     

Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si₃N₄ and SiC at 1350°C show that a correlation exists between the presence of a Si₂N₂O interphase and the strong oxidation resistance of Si₃N₄. During normal oxidation, k _p for SiC was 15 times higher than that for Si₃N₄, and the oxide scale on Si₃N₄ was found by SEM and TEM to contain a prominent Si₂N₂O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k _p increases over 55-fold for Si₃N₄, and 3.5-fold for SiC; the Si₃N₄ and SiC oxidize with nearly equal k _p's; and, most significant, the oxide scale on Si₃N₄ is found to be lacking an inner Si₂N₂O layer. The implications of this correlation for the competing models of Si₃N₄ oxidation are discussed.     

Preparation of Composite Particles by Pulsed Nd-YAG Laser Decomposition of [(CH3)2N]4Ti to TiN-Coat TiO2, Al2O3, or Si3N4 Powders

Irradiation of Ti[N(CH₃)₂]₄ by the 1.064-μm line of a pulsed Nd: YAG laser in the presence of TiO₂, Al₂O₃, or Si₃N₄ particles has been found to form amorphous deposits on the oxide particles. The resulting materials can be processed into TiN/TiO₂, TiN/Al₂O₃, or TiN/Si₃N₄ composites with the TiN component on the surface of the particles. The powders have been characterized by Raman spectroscopy and X-ray powder diffraction studies. The surface analysis of the composites by X-ray photoelectron spectroscopy and high-resolution electron microscopy is presented.     

Tribological Behavior of Si3N4 and Si3N4/Carbon Fiber Composites Against Stainless Steel Under Water Lubrication for a Thrust-Bearing Application

The tribological behavior of Si₃N₄ ceramics and Si₃N₄/carbon fiber composites sliding against stainless steel under water lubrication was investigated using a thrust-bearing-type test method with normal applied loads varying from 0 to 1000 N in 100 N increments. In the case of the monolithic Si₃N₄, the friction coefficient was found to increase up to 0.4 the first time the applied load was increased from 100 to 200 N, and sudden failure of the ceramic ring specimen occurred. In the case of the Si₃N₄/carbon fiber composite, a low friction coefficient was maintained up to the maximum normal load of 1000 N. The addition of the carbon fibers to the silicon nitride ceramics effectively restricts material transfer from the stainless steel to the Si₃N₄ worn surface due to reduction of solid–solid contact through the solid lubricating effect of the carbon fibers.     

Microstructure and Short-Term Oxidation of Hot-Pressed Si3N4/ZrO2(+Y2O3) Ceramics

Composite ceramic materials based on Si₃N₄ and ZrO₂ stabilized by 3 mol% Y₂O₃ have been formed using aluminum isopropoxide as a precursor for the Al₂O₃ sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si₃N₄ matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO₂ grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO₂ incorporated some N during densification.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

The System Si3N4-SiO2-Y2O3

Subsolidus phase relations were established in the system Si₃N₄-SiO₂-Y₂O₃. Four ternary compounds were confirmed, with compositions of Y₄Si₂O₇N₂, Y₂Si₃O₃N₄, YSiO₂N, and Y₁₀(SiO₄)₆N₂. The eutectic in the triangle Si₃N₄-Y₂Si₂O₇-Y₁₀(SiO₄)₆N₂ melts at 1500°C and that in the triangle Si₂N₂O-SiO₂-Y₂Si₂O₇ at 1550°C. The eutectic temperature of the Si₃N₄-Y₂Si₂O₇ join was ∼ 1520°C.     

Facile Synthesis of Si3N4 Nanocrystals Via an Organic–Inorganic Reaction Route

Silicon nitride (Si₃N₄) nanocrystals were synthesized at about 250°C by a simple organic–inorganic reaction between CH₃SiCl₃ and NaN₃. The yield of Si₃N₄ is no <70 wt% based on the amount of precursor CH₃SiCl₃ used in the reaction and TGA analysis. X-ray diffraction indicates the formation of a mixture of α- and β-Si₃N₄. Particles with size from 40 to 100 nm are dominant in the products examined by transmission electron microscopy. X-ray photoelectron spectroscopy gives an atomic ratio of Si:N around 0.75:1. The formation of nanocrystalline Si₃N₄ during the organic–inorganic reaction goes through an intermediate product of NaSi₂N₃, which is important for understanding the reaction mechanism.     

Sintering of Si3N4-Y2O3-Al2O3

Sintering kinetics of the system Si₃N4-Y2O₃-Al₂O3 were determined from measurements of the linear shrinkage of pressed disks sintered isothermally at 1500° to 1700°C. Amorphous and crystalline Si₃N₄ were studied with additions of 4 to 17 wt% Y₂O₃ and 4 wt% A1₂O₃. Sintering occurs by a liquid-phase mechanism in which the kinetics exhibit the three stages predicted by Kingery's model. However, the rates during the second stage of the process are higher for all compositions than predicted by the model. X-ray data show the presence of several transient phases which, with sufficient heating, disappear leaving mixtures of β ' -Si₃N₄ and glass or β '-Si₃N₄, α '-Si₃N₄, and glass. The compositions and amounts of the residual glassy phases are estimated.     

Subsolidus Phase Relationships in Part of the System Si,Al,Y/N,O: The System Si3N4─AIN─YN─Al2O3─Y2O3

The subsolidus phase relationships in the system Si,Al,Y/N,O were determined. Thirty-nine compatibility tetrahedra were established in the region Si₃N₄─AIN─Al₂O₃─Y₂O₃. The subsolidus phase relationships in the region Si₃N₄─AIN─YN─Y₂O₃ have also been studied. Only one compound, 2YN:Si₃N₄, was confirmed in the binary system Si₃N₄─YN. The solubility limits of the α'─SiAION on the Si₃N₄─YN:3AIN join were determined to range from m = 1.3 to m = 2.4 in the formula Y _{m /3}Si_{12- m} Al _m N₁₆. No quinary compound was found. Seven compatibility tetrahedra were established in the region Si₃N₄─AIN─YN─Y₂O₃.     

Phase Relations in the System Si3N4-SiO2-MgO and Their Interrelation with Strength and Oxidation

Phase relation studies of Si₃N₁, SiO₂, and MgO have established three important subsolidus tie lines, viz. Si₃N₄-MgO, Si₃N₄-Mg₂SiO₄, and Si₂N₂O-Mg₂SiO₄ for nonoxidizing fabrication conditions. Strength measurements at 1400°C show that optimum strengths are obtained for compositions approaching the Si₃N₄-MgO and Si₃N₄-Si₂N₂O tie lines and that inferior strengths are obtained for compositions approaching the Si₃N₄-Mg₂SiO₄ tie line. Oxidation measurements at 1375°C show that the oxidation kinetics depend on the content of MgO and Mg₂SiO₄ phases. Optimum oxidation resistance is observed for compositions approaching the Si₃N₄-Si₂N₂O tie line. Strength and oxidation results are discussed with regard to phase equilibrium considerations.     

XPS Investigation of Si3N4/SiC Nanocomposites Prepared Using a Commercial Polymer

We have synthesized Si₃N₄/SiC nanocomposites using a commercial polymer. Formation behavior of SiC nanoparticles has been studied using X-ray photoelectron spectroscopy (XPS). Based on the XPS results, we concluded that SiC nanoparticles were formed by a chemical reaction of Si provided from Si₃N₄ with free carbon obtained by pyrolysis of a polymer around 1300°C. The presence of CN _x compounds in samples processed in an Ar atmosphere supported our explanation.     

Chemical Degradation of Si3N4-Bonded SiC Sidelining Materials in Aluminum Electrolysis Cells

A thorough analysis of a silicon nitride (Si₃N₄)-bonded SiC sidelining material from a Hall-Heroult electrolysis cell is reported. Phase composition before and after chemical degradation of the material is obtained by quantitative analysis using Rietveld refinement of X-ray diffraction data and chemical analysis. The main degradation products as a result of the oxidation of Si₃N₄ binder phase are Si₂ON₂ in the upper part and Na₂SiO₃ in the lower part of the sidelining. The microstructure of α-Si₃N₄ (needle) and β-Si₃N₄ (shell) as well as the degradation products Si₂ON₂ (fiber) and Na₂SiO₃ (flake) were revealed by electron microprobe analysis. Chemical reactions and degradation mechanisms are proposed based on the presented findings. The degradation in the lower part is more severe than that in the upper part because Na diffusion from the cathode enhances the oxidation of Si₃N₄. The degradation changes the physical properties of Si₃N₄-bonded SiC such as density and porosity.     

Dissolution Kinetics of β-Si3N4 in an Mg-Si-O-N Glass

The rate of dissolution of β-Si₃N₄ into an Mg-Si-O-N glass was measured by working with a composition in the ternary system Si₃N₄-SiO₂-MgO such that Si₂N₂O rather than β-Si₃N₄ was the equilibrium phase. Dissolution was driven by the chemical reaction Si₃N₄(c)+SiO₂( l )→Si₂N₂O(c). Analysis of the kinetic data, in view of the morphology of the dissolving phase (Si₃N₄) and the precipitating phase (Si₂N₂O), led to the conclusion that the dissolution rate was controlled by reaction at the crystal/glass interface of the Si₃N₄, crystals. The process appears to have a fairly constant activation energy, equal to 621 ±40 kJ-mol⁻¹, at T=1573 to 1723 K. This large activation energy is believed to reflect the sum of two quantities: the heat of solution of β-Si₃N₄ hi the glass and the activation enthalpy for jumps of the slower-moving species across the crystal/glass interface. The data reported should be useful for interpreting creep and densification experiments with MgO-fluxed Si₃N₄.     

Pressureless Sintering of Dense Si3N4 and Si3N4/SiC Composites with Nitrate Additives

The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si₃N₄ and a Si₃N₄/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si₃N₄ particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si₃N₄ particles milled with oxide additives. Monolithic Si₃N₄ could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N₂, the bulk density of a Si₃N₄/20 wt% SiC composite reached 95% TD with nitrate additives.     

Controlled Crystallization of Amorphous Si3N4by Ti and CI Additives

Thin films of amorphous Si₃N₄ were prepared by the rf-sputtering method, and the effects of titanium and chlorine additives on its crystallization were examined. When Ti-doped amorphous Si₃N₄ was heated, TiN precipitated at >1100°C; the TiN precipitates promoted the conversion of amorphous Si₃N₄ to β-Si₃N₄. Chlorine led to preferential conversion of amorphous Si₃N₄ to α-Si₃N₄.     

Fabrication of TiN/Si3N4 Ceramics by Spark Plasma Sintering of Si3N4 Particles Coated with Nanosized TiN Prepared by Controlled Hydrolysis of Ti(O-i-C3H7)4

TiN-coated Si₃N₄ particles were prepared by depositing TiO₂ on the Si₃N₄ surfaces from Ti(O- i -C₃H₇)₄ solution, the TiO₂ being formed by controlled hydrolysis, then subsequently nitrided with NH₃ gas. A homogeneous TiO₂ coating was achieved by heating a Si₃N₄ suspension containing 1.0 vol% H₂O with the precursor at 40°C. Nitridation successfully produced Si₃N₄ particles coated with 10–20 nm TiN particles. Spark plasma sintering of these TiN/Si₃N₄ particles at 1600°C yielded composite ceramics with a relative density of 96% at 25 vol% TiN and an electrical resistivity of 10⁻³Ω·cm in compositions of 17.5 and 25 vol% TiN/Si₃N₄, making these ceramics suitable for electric discharge machining.