2.5Gb／s GaAs激光器高速驱动电路

研制出一种实用化的ＧａＡｓ激光器高速驱动电路,该电路采用源耦合场效应管逻辑电路形成,０．８μｍ栅工艺,全离子注入平面工艺,单电源（－５．２Ｖ）供电。并给出了研究结果;最大驱动电流可达４５ｍＡ,数据传输速率２．５Ｇｂ／ｓ。     

GaAs／GaAlAs中红外量子阱探测器和双色量子阱红外探测器

本文报道我们在国内率先研制的ＧａＡｓ／ＧａＡｌＡｓ中红外（３～５μｍ）量子阱探测器和双色量子阱红外探测器的制备和性能．ＧａＡｓ／ＧａＡｌＡｓ中红外量子阱探测器是光伏型，探测峰值波长为５．３μｍ，８５Ｋ下的５００Ｋ黑体探测率为３e９ｃｍ·Ｈｚ１／２／Ｗ，峰值探测率达到５×１０１１ｃｍ·Ｈｚ１／２／Ｗ，阻抗为５０ＭΩ．ＧａＡｓ／ＧａＡｌＡｓ双色量子阱红外探测器是偏压控制型的两端器件，在零偏压下该探测器仅在３～５μｍ波段有响应，响应峰值波长为５．３μｍ，８５Ｋ温度下５００Ｋ黑体探测率为３e９ｃｍ     

AlInAs／GaINAsHBTIC技术

本文描述了用与ＩｎＰ衬底晶格匹配的ＡｌＩｎＡｓ／ＧａＩｎＡｓ异质结双极晶体管制作的集成电路。ＨＢＴ的发射极尺寸为２μｍ×５μｍ，截止频率ｆ＿Ｔ和最高振荡频率ｆ＿ｍａｘ分别为９０ＧＨｚ和７０ＧＨｚ。用电流型逻辑（ＣＭＬ）制作了环形振荡器、触发器分频电路和双模前置换算器。其环形振荡器每门延迟时间为１５．８ｐｓ，ＣＭＬ触发器分频电路反转速率为２４．８ＧＨｚ。而４／５和８／９双模前置换算器分别由１０６和１２４只晶体管组成，可在高达９ＧＨｚ的时钟速率下工作。这两种双模前置换算器电路是ＩｎＰ基Ｈ８Ｔ制作的最大规模电路。     

LP-MOCVD制备AlGaInP高亮度橙黄色发光二极管

利用ＬＰ－ＭＯＣＶＤ外延生长ＡｌＧａＩｎＰＤＨ结构橙黄色发光二极管．引入厚层Ａｌ０．７Ｇａ０．３Ａｓ电流扩展层和Ａｌ０．５Ｇａ０．５Ａｓ－ＡｌＡｓ分布布拉格反射器（ＤＢＲ）．２０ｍＡ工作条件下，工作电压１．９Ｖ，发光波长峰值在６０５ｎｍ，峰值半宽为１８．３ｎｍ，管芯平均亮度达到２０ｍｃｄ，最大２９．４ｍｃｄ，透明封装成视角（２θ１／２）１５°的ＬＥＤ灯亮度达到１ｃｄ．     

预测全球GaAs IC市场

预测全球ＧａＡｓＩＣ市场据ＩＣＥ报道，１９９４～１９９５年ＧａＡｓＩＣ生产水平为１００ｍｍ圆片０．４μｍ工艺，部分达１５０ｍｍ圆片。目前销售的ＧａＡｓＩＣ达３５万门。１９９４年全球ＧａＡｓＩＣ市场为５．２亿美元，１９９５年为５．６亿美元，１９９６年为...     

C波段单片有源环行器

报道了一种源耦合反馈单片有源环行器的研究结果、该单片电路采用实测ＦＥＴ的Ｓ参数进行微波ＣＡＤ优化设计，内部包含有３个３００μｍ栅宽的ＦＥＴ，芯片面积１．７ｍｍ×１．９ｍｍ。采用ＧａＡｓ的离子注入平面工艺，芯片电路具有良好的均匀性、一致性。在３．５～４．５ＧＨｚ内，电路插入损耗约７．５ｄＢ，隔离度为２１～２６ｄＢ，驻波比基本小于２。     

工作频率2．65GHZ的多路调制器

工作频率２．６５ＧＨＺ的多路调制器据日本《日经工》１９９３年第５８９期报道，日本冲电气工业公司采用最小加工尺寸为０．５卜ｍ的ＧａＡｓＬＳＩ研制成工作频率２．６５ＧＨｚ的多路调制器。使用这种ＬＳＩ的程序库，所设计成的电路在ＩＧＨＺ以上工作的例子是非常少...     

3～5.3μmIn_xGa_(1-x)As/Al_yGa_(1-y)As/Al_zGa_(1-z)As非对称台阶量子阱红外探测器

本文报道我们率先研制出的３～５．３μｍＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱红外探测器的制备和性能．该探测器具有光伏特征，７７Ｋ温度、±７Ｖ外偏压下的５００Ｋ黑体探测率达到约１．０×１０１０ｃｍ·Ｈｚ１／２／Ｗ，并且，与１→２子带间跃迁相对应的光电流峰值响应波长可随外偏压在中红外（３～５．３μｍ）波段作适当调谐．运用平面波展开法，依据样品的阱、垒结构参数，计算了ＩｎｘＧａ１－ｘＡｓ／ＡｌｙＧａ１－ｙＡｓ／ＡｌｚＧａ１－ｚＡｓ非对称台阶量子阱１→２子带间跃迁的Ｓｔａ     

GaAs VHSIC的离子注入和快速热退火的均匀性研究

研究了改变注入角、ｐ型埋层注入及红外快速热退火对ＧａＡｓＩＣ有源层均匀性的影响，得到了表面形貌好、大面积均匀性良好的注入掺杂有源层。在２英寸圆片上做出的场效应管无栅饱和电流相对偏差２．３％，器件阈值电压标准偏差９８ｍＶ。用该材料做出了６７２门ＧａＡｓ超高速门阵电路，还做出了工作频率为５ＧＨｚ的除二动态分频器。     

2英寸高均匀性GaAs多层外延材料

用法国进口的ＧａＡｓＶＰＥ设备，采用ＡｓＣｌ）３／Ｈ＿２／Ｇａ体系，以ＳｎＣｌ＿４ｌ／ＡｓＣｌ＿３为掺杂液，生长了２英寸多层ＧａＡｓ外延材料，自行设计了反应器的热场分布，在反应器中增加了合适的搅拌器，用以改变反应器中气体流动情况。ＧａＡｓ外延层的浓度均匀性与厚度均匀性均小于５％。浓度均匀性的最佳值为３．７％，厚度均匀性的最佳值为１．５％，当外延层载流子浓度为１．９×１０￣（１７）ｃｍ￣（－３）时，室温迁移率达到４３９０ｃｍ￣２／Ｖ·ｓ。     

A versatile Si-bipolar driver circuit with high output voltageswing for external and direct laser modulation in 10 Gb/s optical-fiberlinks

A monolithic integrated driver circuit developed for laser modulation in a 10 Gb/s optical-fiber link is presented. The IC was fabricated in a self-aligned double-polysilicon Si-bipolar production technology with f_T≈25 GHz. The circuit can be operated up to 14 Gb/s with a maximum output voltage swing as high as 3.6 V at 50 Ω load (corresponding to an internal current swing of 108 mA), which allows the circuit to drive external modulators. In addition, the circuit can be used for direct laser modulation at 10 Gb/s, since the output current swing can easily be controlled over a wide range (e.g., from 15 mA to 60 mA). Problems in the design of such driver circuits as well as their solutions are discussed in detail     

Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 μm gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V_p-p at each output. The 1.3-1.55 μm wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 kΩ. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V_p.p     

Pseudomorphic 2DEG FET IC's for 10 Gb/s optical communicationsystems with external optical modulation

An optical modulator driver IC and a preamplifier IC for 10 Gb/s optical communication systems are developed using AlGaAs/InGaAs/GaAs pseudomorphic two-dimensional electron gas (2DEG) FETs with a gate length of 0.35 μm. The optical modulator driver IC operates at a data rate up to 10 Gb/s with an output voltage swing of more than 4 V_p-p . The bandwidth for the amplifier IC is 13.0 GHZ with ab 47 dB-Ω transimpedance gain. In addition, optical transmission experiments with external optical modulation using these ICs have successfully been carried out at 10 Gb/s     

10Gb/s光调制器InGaP/GaAs HBT驱动电路的研制

采用自行研发的4英寸InGaP/GaAs HBT技术,设计和制造了10Gb/s光调制器驱动电路.该驱动电路的输出电压摆幅达到3V_pp,上升时间为34.2ps(20~80%),下降时间为37.8ps(20~80%),输入端的阻抗匹配良好(S11=-12.3dB@10GHz),达到10Gb/s光通信系统(SONET OC-192,SDH STM-64)的要求.整个驱动电路采用-5.2V的单电源供电,总功耗为1.3W,芯片面积为2.01×1.38mm².     

AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems

The implementation of multigigabit-per-second optical communication systems requires many high-speed electronic circuit components that meet stringent performance requirements. Several important research prototype circuits for fiber-optic transmission, implemented in a baseline AlGaAs/GaAs HBT process, are discussed. These include a 20 Gb/s decision circuit, a 27 Gb/s 1:2 demultiplexer, a 30 GB/s 2:1 multiplexer, a 27 Gb/s 4:1 multiplexer, and a 11 Gb/s laser driver IC     

InP DHBT technology and design methodology for high-bit-rateoptical communications circuits

High-bit-rate optical communication links require high performance circuits. Electrical time division multiplex (ETDM) single channel bit-rate of 40 Gb/s is at hand, due to recent progress in both technology and design methodology. Multilevel modulation format can be envisaged for ETDM transmission. An InP double heterojunction bipolar transistor technology is presented in this paper. The methodology used and tools developed with optical communications in mind are also discussed. Fabricated circuits are reported: 40 Gb/s multiplexer and demultiplexer, a 20 Gb/s driver, a 30 Gb/s selector-driver, a 22 Gb/s decision circuit, and a decision-decoding circuit for multilevel transmissions     

A 3 Gb/s transmitter with a tapless pre-emphasis CML output driver

A 3 Gb/s wireline transmitter (Tx) with a tapless pre-emphasis current-mode logic output driver is presented in this paper. The proposed output driver can support 2.5, 6 and 10 dB pre-emphasis without any additional current tap. It can reduce the current consumption of the output driver by 30 %. The 1.5 GHz phase-locked loop (PLL), multi-phase generator, and 26-to-1 serializer are utilized to serialize 26-bit parallel data to 1-bit 3 Gb/s serial data stream. The rms and peak-to-peak jitters of PLL are 2.97 and 22.5 ps, respectively. The eye opening of the proposed output driver at 3 Gb/s is 0.8UI with a 10 dB loss channel. The current consumption of the output driver is only 5.14 mA, and the Tx is 9 mA. The area of the Tx is 0.72 mm² using the 0.11 μm CMOS process.     

40Gb/s(STM-2 5 6)高速时分复用传输技术前景展望

随着技术的发展 ,4 0 Gb/ s(STM- 2 5 6 )作为 10 Gb/ s(STM- 6 4)传输业务颗粒的后续者 ,开始逐渐为业界熟悉。就 4 0 Gb/ s这一新兴技术的市场推动因素、应用场合以及影响 4 0 Gb/ s传输的一些关键技术作了介绍 ,并对其将来的应用前景作出展望     

Josephson latching driver with a low bit-error rate

A new Josephson latching driver with a current-injection device at an input port has been developed and tested. It has high input sensitivity and a wide bias margin. Under an optimal bias condition, the bit-error rate (BER) of this driver is below 10/sup -12/ at data rates of 5 and 10 Gb/s. The driver can be switched by superconducting single-flux quantum (SFQ) pulse input and can be used as an amplifier to test the BER of SFQ circuits. In such a test, the BER of an SFQ converter operating at 5 Gb/s was less than 10/sup -12/ with bias margin of /spl plusmn/20%.     

0.25μm CMOS工艺实现的3.125 Gb/s×12通道VCSEL驱动器阵列

本文介绍了一种利用0.25μm CMOS工艺实现的12通道垂直腔面发射激光器(VCSEL)阵列驱动器电路.该电路采用3.3V单电源供电,单通道最大输出调制电流超过30毫安,单通道工作速率达到3.125Gb/s,12个并行通道的总带宽为37.5Gb/s.