1.2～1.4GHz 300W宽带硅微波脉冲大功率管

介绍了L波段宽带硅微波脉冲300W大功率晶体管研制结果。该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻和热稳定等新工艺技术,在1.2～1.4GHz频带内,脉宽150μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于300W,功率增益大于8.75dB,效率大于55%。     

1.46～1.66GHz 250W宽带硅微波脉冲大功率管

报道了L波段高端中脉冲250W宽带硅微波脉冲大功率晶体管研制结果.该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻等新工艺技术,器件在1.46～1.66GHz频带内,脉宽200μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于250W,功率增益大于7.0dB,效率大于45%.     

1.46~1.66GHz 250W宽带硅微波脉冲大功率管

报道了L波段高端中脉冲250W宽带硅微波脉冲大功率晶体管研制结果.该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻等新工艺技术,器件在1.46～1.66GHz频带内,脉宽200μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于250W,功率增益大于7.0dB,效率大于45%.     

L波段250W宽带硅微波脉冲功率晶体管

南京电子器件研究所最近研制成功 L波段2 5 0 W宽带硅微波脉冲功率晶体管。该器件在 1 .2～ 1 .4GHz频带内 ,脉宽 1 5 0 μs,占空比 1 0 %和 40V工作电压下 ,全带内脉冲输出功率在 2 4 0～ 30 0W之间 ,功率增益大于 7.8d B,效率大于 5 0 %。器件设计为梳条状结构 ,单元间距 6μm,发射极和基极金属条条宽 2 .4μm,金属条间距 0 .6μm。每个器件由 6个尺寸为 1 60 0μm× 75 0μm功率芯片组成 ,每个功率芯片含有 2个子胞。整个器件包含 1 2个子胞、2 0个电容和 2 0 0多条连接金丝匹配而成。在微波功率发射等领域 ,硅微波脉冲大功率晶体管具…     

2.2～2.4 GHz 110W硅脉冲功率晶体管

微波系统对功率放大用的硅功率晶体管的微波输出功率、增益、效率等性能指标提出了越来越高的要求。南京电子器件研究所先后在 P,L,S,C波段硅微波功率晶体管研究领域取得进展。最近又研制成功工作频率 2 .2～ 2 .4GHz,脉冲宽度 1 0 0μS,占空比 1 0 % ,输出功率大于 1 1 0 W,功率增益大于 8.0 d B,效率大于 45 %的硅脉冲功率晶体管。微波功率晶体管设计制造的重点和难点主要有如下三个方面 :1 .克服微波寄生参数 ,提高微波增益性能 ;2 .克服基区大注入效应 ,提高功率容量 ,保持大功率条件下的微波性能 ;3.克服大功率应用所带来的热效应 …     

5GHz 30W GaAs功率场效应晶体管

<正> 大功率高效率的GaAs场效应晶体管对雷达和数字通信系统中的放大器都是很重要的。输出功率20W的C波段GaAs功率FET已进入商用阶段。最近日本东芝公司微波固体部门报道了一种5GHz频带下输出功率大于30W的多芯片内匹配GaAs场效应晶体管。     

2.7-3.4GHz超宽带长脉宽硅功率晶体管

南京电子器件研究所最近在研制超宽带、长脉宽硅脉冲功率晶体管领域取得重大进展,研制出的器件在2.7～3.4 GHz超宽频带内,脉宽100μs,占空比10%条件下,全带内脉冲输出功率大于100 W,功率增益大于7.0dB,效率大于40%,顶降小于0.5dB.S波段硅脉冲大功率管带宽达到了700MHz,迄今尚未见国内外报道.     

P波段脉冲输出150W高增益功率晶体管

采用微波功率管二次发射极镇流和掺砷多晶硅发射极覆盖树枝状结构等新工艺技术，研制出用于工程的实用化P波段脉冲大功率晶体管。该器件由16个单胞内匹配而成，在该频带内，脉宽500μs，占空比15％，脉冲输出150W，增益大于10dB，集电极效率大于50％。     

1.44~1.68GHz 220W硅微波脉冲功率晶体管

南京电子器件研究所近期研制成功1.44～1.68GHz 220 W硅微波脉冲功率晶体管.该器件在1.44～1.68 GHz频带内,脉宽200 μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于220 W,功率增益大于7.1 dB,效率大于45%.该器件采用高效梳条状结构,单元间距6μm,发射极和基极线宽1.9μm,金属条间距1.6μm.每个器件由6个面积为1 600μm×800 μm功率芯片组成,每个功率芯片含有2个大功率子胞.整个器件包含12个大功率子胞、20个内匹配电容和200多条连接金丝.     

世界固体电子新闻

<正>L波段脉宽10μs输出750W的微波晶体管 据《Microwaves&RF》1992年第10期报道,菲利浦公司已研制成1030～1090 MHz MX1011B700Y型硅双极微波晶体管,典型输出功率为750W。这种晶体管适合于中等脉宽10μs,占空因子为1％的脉冲发射机。典型效率为54％,功率增益大于6dB。晶体管封装在FO91B金属陶瓷法兰盘式的管壳内。 (盛柏桢)     

RF measurements and characterization of heterostructurefield-effect transistors at low temperatures

The RF performance of both conventional AlGaAs-GaAs and superlattice AlAs-GaAs heterostructure field-effect transistors (HFETs) has been investigated at 120 K, and the results are compared with room-temperature values. Both the system used for low-temperature RF measurements up to 12 GHz and the procedure used to extract the equivalent circuit from measured S-parameters of the packaged FET are described. The high-frequency performance of the HFETs is strongly improved at low temperatures but is sensitive to light due to the device structure. The problems of low-temperature measurement and the results of RF investigation are discussed. Although the gate lengths of the HFETs investigated are greater than 1 μm, the method and the results of the analysis can be transferred to submicron devices without any restrictions. Therefore, submicron superlattice HFETs may exhibit high power gain at 300 K as well as at lower temperatures both in the dark and under illumination     

基于UCC28061的交错并联BCM Boost PFC设计

采用UCC28061设计了一款工作在交错并联临界模式下300W的电源。交错并联的Boost PFC拓扑结构,能够大大减小输入电流纹波和输出电容电流纹波。实验结果表明,AC85-265V输入时,功率在300W时PF能够达到0.99以上,电流畸变率THD在3%以下。     

Impulse responses of submicron GaAs photodetectors

Metal–semiconductor–metal photodetectors with different submicron spacings (d = 100, 300, 500, 700 and 900 nm) were fabricated on GaAs with a carrier recombination time of 100 ps by electron beam lithography. Temporal responses of the detectors were measured by photoconductive sampling in order to identify factors which limits the response speeds. At a low excitation of <100 μW, the response speeds of 100, 300 and 500 nm spacing detectors are limited by parasitic capacitances of the submicron structures. The speeds of 700 and 900 nm spacing detectors are limited by an electron/hole transport in the semiconductor. At a high excitation of >100 μW, the response speeds of the all spacing detectors are limited by field screening caused by electron–hole plasma.     

一种S波段300W固态功率放大器的研制

介绍了一种工程上已经使用的 Ｓ波段,输出脉冲功率大于３００ Ｗ 、工作带宽达 ４００ Ｍ Ｈｚ的固态功率放大器。该功放运用了模块化的设计方法,提高了功放的可靠性。     

Ku波段300W固态发射机的研制

介绍一种新成功研制的Ku波段固态发射机,该发射机采用波导合成技术,对4个80w末级功率模块进行功率合成,获得300W以上的峰值功率,发射机最大脉冲宽度为120μs,最大占空比为30％,合成效率大于93．7％。     

Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs

We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1A/mm 100 /spl mu/m wide device exceeds 40 W for a 1-mm wide 2-A/mm MOSHFET.     

X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

A report is presented on the power performance of deep submicron AIGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.     

大功率微带定向耦合器的设计

介绍了一种S波段25 dB大功率微带定向耦合器的设计方法及测试结果。为了对大功率微波信号进行较为准确的检测,微带耦合器需具有抗大功率串扰强、带内平坦度好、插损小的性能。文中采用电感补偿平衡奇偶模相速技术,由二元概念和容性补偿奇偶模相速的理论,分析出电感补偿电路的设计参数,用Ansoft HFSS软件进行仿真与优化,实现了高性能大功率微带定向耦合器。微带电路加工在Rogers RT/duroid 6002基片上,分别用10 W和300 W固态发射机对其抗大功率串扰的性能进行了测试。经实测数据分析,所设计的耦合器在工作频带内,插损小于0.3 dB,带内波动低于1 dB,方向性大于9 dB。     

一种基于Lange耦合器的S波段小型化集成功放

设计了一种全部采用国产芯片研制的小型化集成功放模块。该模块采用一种全新的结构模式,通过Lange耦合器将GaAs MMIC单片、单电源GaAs功率芯片和硅功率芯片混合集成,使得其体积比同等性能的功率放大器减小。测试结果表明,在工作电压36V、脉宽300μs、占空比10%的测试条件下,2.7～3.1GHz或3.1～3.4GHz带内输出功率均能达到50W,36V电源效率大于40%。