新型三端自旋转移扭矩随机存储器器件的模拟研究

为了提高自旋转移扭矩随机存储器的性能,尤其是它的写速度,我们提出了几种三端自旋转移扭矩随机存储器的改进结构。利用微磁模拟对几种新结构单元的磁动态过程进行研究,发现改进的几种新结构单元中,性能最好的新结构比原始的方形的三端器件单元写速度快120%。这种优化的三端器件在保证三端器件可靠性的同时大大提高了速度。     

Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.     

Magnetoresistive Memory with Ultralow Critical Current for Magnetization Switching

The data writing and thermal stability of information storage are studied theoretically for a magnetic random access memory (MRAM) composed of a magnetic tunnel junction or multilayer exhibiting giant magnetoresistance. The theoretical analysis focuses on the magnetization switching in the “free” layer of a MRAM cell, which is induced by a spin‐polarized current imposing a spin‐transfer torque (STT) on the magnetization. It is shown that the writing current in such an STT‐MRAM reduces dramatically near a spin reorientation transition (SRT) driven by lattice strains and/or surface magnetic anisotropy and even tends to zero under certain conditions. In particular, at the size‐driven SRT in the perpendicular‐anisotropy CoFeB‐MgO tunnel junctions, the critical current densities for magnetization reorientations between the parallel and antiparallel states are expected to fall to low values of about 1.3 × 10⁵ and ?3.3 × 10⁴ A cm^?2. Remarkably, STT‐MRAMs may combine low writing current with very high thermal stability of information storage (retention over 10 years) even at a high density ≈500 Gbit inch^?2.     

基于电磁兼容的高速无线节点PCB设计与仿真

在无线节点PCB的设计过程中,由于存在高速电路,所以不可避免的会出现电磁兼容问题.对自动布线后的信号线进行仿真发现反射和串扰对信号的影响较大.根据电磁兼容布局布线原则对出现问题的信号线手动调整参数重新布线,调整后再一次进行仿真,此时反射和串扰得到了有效的抑制.由此可见,根据电磁兼容设计原则手动布线后的PCB性能优于自动生成的PCB布线设计.     

基于Saber的异步电动机直接转矩控制系统仿真

为了验证基于三电平逆变器异步电动机直接转矩控制系统的可行性和有效性,利用Saber仿真软件优良的模块化和分级式的系统仿真能力,建立了异步电动机直接转矩控制系统中定子磁链与电磁转矩观测器、扇区判断、空间电压开关矢量表以及二极管箝位型三电平逆变器等子系统的仿真模型,并根据直接转矩控制原理最终构建了完整的系统仿真模型。利用所构建的系统仿真模型进行了仿真实验,仿真分析结果证明建立的系统模型是有效的,表明直接转矩控制系统具有良好的动态响应性能。     

高速PWM单粒子瞬态效应脉冲激光模拟试验研究

利用脉冲激光验证高速脉宽调制控制器（Pulse Width Modulator,PWM）单粒子瞬态效应的敏感性和防护设计。试验中,通过改变脉冲激光能量,逐步扫描PWM控制器电路,确定了诱发单粒子瞬态效应的激光能量阈值和敏感区域。通过改变PWM控制器软启动配置电路设计,验证了防护电路设计的合理性,为卫星电源子系统的单粒子瞬态效应防护设计提供技术参考。     

电荷耦合器件信号电荷转移的数值模拟

建立了线阵埋沟CCD的器件物理模型和数值模拟方法;运用半导体器件模拟软件MEDICI,数值模拟了CCD信号电荷在三相时序脉冲驱动下动态转移过程;模拟计算了CCD电荷转移效率随信号电荷包大小的变化以及暗电子数随埋沟掺杂浓度大小的变化情况。数值模拟结果与理论分析、实验测试结果吻合较好。     

Simulation for signal charge transfer of charge coupled devices

Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.     

Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

We have fabricated reduced area InGaAs/InP DHBTs for high speed circuit applications. To produce the small dimensions required, a process involving both wet chemical and ECR plasma etching was developed. Optical emission spectroscopy was used for end-point detection during plasma etching. With this improved process, an f_t of 170 and f_max of 200 GHz were achieved for 1.2 × 3 μm² emitter size devices with a 500 ? base.     

基于SVM的船舶推进电机直接转矩控制仿真研究

介绍了船舶电力推进系统的结构和特点;分析了基于空间矢量调制（SVM）直接转矩控制（DTC）的原理;介绍求取预期电压矢量的方法以及船舶的船-桨模型;在Matlab/Simulink搭建了船舶电力推进DTC仿真模型。仿真结果表明基于SVM的DTC可以提高船舶电力推进系统的性能。     

地面雷达地杂波模拟

采用相干视频信号模拟方法,对线性调频脉冲压缩雷达地杂波进行了建模与仿真.模型基于雷达杂波的后向散射特性和杂波的统计特性,考虑了地杂波的时间和空间的相关特性.仿真中利用了零记忆非线性(ZMNL)变换法产生所需的随机序列,复现了既包含振幅又包含相位的雷达杂波回波相干视频信号.仿真结果表明该方法可行.     

Photosensitivity of top gate C60 based OFETs: Potential applications for high efficiency organic photodetector

The comparison of light-induced effects in bottom-gate and top-gate organic field effect transistors (OFETs) provide a clear indication, that the nature of interface between the active layer and the gate dielectric plays a major role in the observed light-induced threshold voltage shift. The nature of interface was also analyzed by electron spin resonance (ESR) experiments, which provides a direct evidence for the creation of free radical species when parylene is deposited on the top of the C₆₀ semiconductor layer. The rate of change of light-induced threshold voltage shift strongly depends on the wavelength and intensity of the incident light, and transverse electric field at the interface. The observed effects provide a strong base for the realization of high efficiency organic photodetectors and optical memory devices. The responsivity of organic photodetector was measured up to 1047 A/W.     

用于降低高速CMOS图像传感器电荷转移时间的工艺技术

This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors.These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode(PPD) and the voltage difference between the PPD and the floating diffusion(FD) node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor,respectively.The techniques shorten the charge transfer time from the PPD diode to the FD node effectively.The proposed process techniques do not need extra masks and do not cause harm to the fill factor.A sub array of 3264 pixels was designed and implemented in the 0.18 m CIS process with five implantation conditions splitting the N region in the PPD.The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques.Comparing the charge transfer time of the pixel with the different implantation conditions of the N region,the charge transfer time of 0.32 s is achieved and 31% of image lag was reduced by using the proposed process techniques.     

Analysis of read speed latency in 6T-SRAM cell using multi-layered graphene nanoribbon and cu based nano-interconnects for high performance memory circuit design

In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperature-dependent Cu and multilayered graphene nanoribbon (MLGNR)-based nano-interconnect materials is used throughout the circuit (primarily bit/bit-bars [red lines] and word lines [write lines]). Here, the read speed analysis is performed with four different chip operating temperatures (150K, 250K, 350K, and 450K) using both Cu and graphene nanoribbon (GNR) nano-interconnects with different interconnect lengths (from 10 μm to 100 μm), for reading-0 and reading-1 operations. To execute the reading operation, the CMOS technology, that is, the16-nm PTM-HPC model, and the16-nm interconnect technology, that is, ITRS-13, are used in this application. The complete design is simulated using TSPICE simulation tools (by Mentor Graphics). The read speed latency increases rapidly as interconnect length increases for both Cu and GNR interconnects. However, the Cu interconnect has three to six times more latency than the GNR. In addition, we observe that the reading speed latency for the GNR interconnect is ~10.29 ns for wide temperature variations (150K to 450K), whereas the reading speed latency for the Cu interconnect varies between ~32 ns and 65 ns for the same temperature ranges. The above analysis is useful for the design of next generation, high-speed memories using different nano-interconnect materials.     

多芯片组件的三维温场有限元模拟与分析

针对双列直插封装的大功率MCM，建立了简化的热学模型；利用有限元数值方法，在ANSYS软件平台下，对其三维温场进行了稳态模拟和分析。模拟结果与测量值的误差为4．5％，表明设定的模型与实际情况符合较好。模拟结果表明，对于金属DIP封装的MCM，内热通路主要沿芯片背面向外壳底表面传递。     

用于线性菲涅尔式聚光系统的CPC 仿真研究

以用于线性菲涅尔式聚光系统的CPC为研究对象,在Matlab环境下建立了数学模型。利用光线跟踪法对不同间隙、不同最大接受半角和不同截取比的CPC汇聚率进行仿真研究,结果表明用于线性菲涅尔式聚光系统的CPC对不同入射角光线具有特定的汇聚率,随着入射角的变化会出现极小值,极小值所对应的入射角仅与CPC最大接收半角相关,与截取比和间隙无关。仿真计算了间隙为50 mm、最大接受半角为45、截取比为0.75的CPC汇聚率为80.15%。最后通过实验验证了仿真方法的有效性。     

S类放大器交越失真的仿真研究

交越失真是由于晶体管的门坎电压而产生,减小或克服交越失真是人们一直关注的课题之一。本文采用Multisim9对一款S类音频功率放大电路进行仿真,给定不同的信号幅度和频率,用虚拟示波器观察其输入输出信号的波形,同时用虚拟仪表量测其幅值。结果表明S类电路没有完全消除纯乙类电路所存在的交越失真。     

FY-3C微波湿温探测仪118 GHz和183 GHz通道辐射特性仿真分析

我国第二代极轨气象卫星的第三颗星——风云三号C星(FY-3C)已于2013年9月发射.为探讨微波湿温探测仪大气探测通道对大气参数的探测能力,采用威斯康星大学的非流体静力学中尺度模式系统(UW-NMS)模拟Katrina飓风的基础数据集,结合微波辐射传输模式,正演模拟分析了微波湿温探测仪118 GHz和183 GHz通道的辐射特性.仿真结果表明118 GHz和183 GHz通道作为星载亚毫米波大气探测通道,能够提供更加精细的大气温度和湿度廓线信息;冰态粒子的散射作用可使(118.75±5.0)GHz和(183.31±7.0)GHz通道亮温分别下降108 K和76 K,新增的探测频点和通道能提升对云雨大气的探测能力;118 GHz和183 GHz通道亮温对云中各种水凝物粒子响应的模拟分析结果证明了这两组通道在云中水凝物分布特性反演方面的潜在探测能力;大气中雨水含量的增加可以导致(118.75±5.0)GHz通道亮温下降4.5 K,118 GHz对液态粒子特有的响应能力,显示了其作为降水反演频点的优势;大气中雪粒子含量的增加会使(118.75±5.0)GHz通道亮温下降10 K,可利用该通道探测云中的雪晶含量.     

电子战三维视景软件适应性架构设计

针对电子战三维视景软件的需求变化特征, 提出了其适应性软件架构的设计。研究了领域需求的变化, 提出了需求的抽象和分析方法, 进行了电子战三维视景软件的适应性架构设计, 具体说明了软件的需求处理、需求与架构的对应关系, 及其逻辑架构和运行架构, 给出了领域需求变化时通过架构调整进行系统应用扩展的方法, 表明适应性架构可快速响应变化需求, 缩短开发周期, 减少开发成本。     

非合作目标高精度激光甲烷遥测参数仿真分析与实验研究

针对非合作目标激光甲烷遥测系统测量误差大、精度低和抗干扰能力差等问题,基于可调谐半导体激光吸收光谱(tunable diode laser absorption spectroscopy, TDLAS)技术和波长调制光谱(wavelength modulation spectroscopy, WMS)技术,利用simulink软件建立一套甲烷积分浓度遥测仿真系统。采用归一化二次谐波检测技术去除环境干扰。仿真分析了正弦波频率和调制系数m对归一化二次谐波信号的影响,结果表明,m=2.2为最佳调制系数,正弦波频率的大小对归一化二次谐波信号无影响,确定了甲烷积分浓度检测的有效范围为0—2000 ppm·m,在该范围内,系统仿真的误差为-3.57%—4.06%。根据仿真结果对遥测仪进行了相关参数优化和实验研究与分析,结果表明系统测量误差为-4.68%—2.45%,采用Allan方差分析方法对系统的稳定性和检测限进行评估,该系统5 s积分时间内的检测下限为37.85 ppm·m,最佳积分时间为345 s,对应的检测下限为6.27 ppm·m。该研究结果对高精度激光甲烷遥测系统研发具有重要的意义。