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1.
Anees A. Ansari M. A. M. Khan M. Naziruddin Khan Salman A. Alrokayan M. Alhoshan M. S. Alsalhi 《半导体学报》2011,32(4):043001-6
This paper reports the optical and electrical properties of electrochemically deposited polyaniline (PANI)-cerium oxide (CeO2) hybrid nano-composite film onto indium-tin-oxide (ITO) glass substrate. UV–visible spectroscopy and I-V characteristic were performed to study the optical and electrical parameters of the electrochemically deposited film. The film exhibited a strong absorption below 400 nm (3.10 eV) with a well defined absorbance peak at around 285nm (4.35 eV). The estimated band gap of the CeO2 sample was 3.44 eV and this value is higher than bulk CeO2 powder (Eg = 3.19 eV) due to quantum confinement effect. 相似文献
2.
William J. Lee Yean-Kuen Fang Jyh-Jier Ho Chin-Ying Chen Rung-Ywan Tsai Daoyang Huang Fang C. Ho H. W. Chou C. C. Chen 《Journal of Electronic Materials》2002,31(2):129-135
In this paper, indium tin oxide (ITO) thin films were prepared by unipolar and bipolar direct current (DC)-pulsed magnetron
sputtering in a mixture of argon and oxygen onto unheated glass substrates. The target of ITO with 10 wt.% tin is used. The
influences of polar modes (unipolar and bipolar); output frequencies (0 to 33 kHz); and times and off times on the optical,
electrical, and structural properties of ITO films are investigated. The correlations between the deposition parameters and
the film properties are discussed. It is found that the resistivity with 10−3 Θ-cm and transmittance with ≥90% of amorphous ITO films can be prepared by the reactive bipolar DC-pulsed sputtering with
t
on
−
between 45 μs and 85 μs (i.e., t
on
−
/t
on
+
is 9–17), and t
on
+
, t
off
−
and t
off
+
are constant at 5 μs, 10 μs, and 5 μs, respectively. An optimal condition, based on the polar mode and frequency of reactive-pulsed
sputtering, for obtaining the high transmittance and low resistivity of ITO films is suggested. 相似文献
3.
Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the (222) plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the (400) plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The transmittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity (10-2 Ω·cm), and relatively high transmittance (~ 93%). 相似文献
4.
Polyaniline (PANI) composite coatings were prepared by polymerising aniline (ANI) monomers, which were previously embedded in an insulator polymer matrix (PMMA, PVK or PS), in an atmosphere saturated with aqueous HCl–(NH4)2S2O8 solution. The optical spectra and electrical measurements of these coatings clearly show the formation of the emeraldine salt of PANI in the composite materials. Sheet resistance data as well as an SEM morphology study suggest a surface polymerisation of aniline in the PANI–PMMA and PANI–PS composite coatings, whereas a volumetric polymerisation of aniline is evident in the PANI–PVK samples. The low percolation threshold (pc) values of these coatings suggest a fibre structure of the PANI phase inside the composite materials. The curves of current versus temperature show a higher electrical property stability of the PANI–PVK composite coatings than of a PANI single film. Copyright © 1999 John Wiley & Sons, Ltd. 相似文献
5.
Polyaniline/indium oxide (PANI/In2O3) nanocomposite thin films have been prepared in water-dispersed medium with the presence of different surfactants by an in-situ self-assembly technique. A cationic surfactant TTAB (tetradecyltrimethylammonium bromide) and a non-ionic surfactant tween- 20 (poly (ethylene oxide) (20) sorbitan monolaurate) are used as additives. The nanocomposites and thin films are characterized by Fourier transform infrared (FTIR), transmission electron microscopy (TEM), and scanning electron microscopy (SEM), respectively. The optical properties reveal the interaction between PANI/In2O3 nanocomposites and surfactants, and PANI/In2O3 thin films prepared in the presence of surfactants exhibits the finer nanofiber than the surfactants free PANI/In2O3 thin film. The ammonia (NH3) gas-sensing characteristic of PANI/In2O3 thin films and the effect of different surfactants on the gas-sensing property are studied. The results indicated that the film processed in the presence of TTAB has the highest gas sensitivity among all the prepared films. 相似文献
6.
Polyaniline/indium oxide(PANI/In2O3)nanocomposite thin films have been prepared in water-dispersed medium with the presence of different surfactants by an in-situ self-assembly technique.A cationic surfactant TTAB(tetradecyltrimethylammonium bromide)and a non-ionic surfactant tween20(poly(ethylene oxide)(20)sorbitan monolaurate)are used as additives.The nauocomposites and thin films are characterized by Fourier transform infrared(FTIR),transmission electron microscopy(TEM),and scanning electron microscopy(SEM),respectively.The optical properties reveal the Interaction between PANI/In2O3nanocomposites and surfactants,and PANI/In2O3 thin films prepared in the presence of surfaetants exhibits the finer nanofiber than the surfactants free PANI/In2O3thin film.The ammonia(NH3)gas-sensing characteristic of PANI/In2O3 thin films and the effect of different surfactants on the gas-sensing property are studied.The results indicated that the film processed in the presence of TTAB has the highest gas sensitivity among all the prepared films. 相似文献
7.
CeO2掺杂对BaTiO3基陶瓷电介质的影响 总被引：1，自引：0，他引：1
研究采用固相法在BaTiO3中掺杂不同含量的CeO2对体系介电性能及微观结构的影响,讨论了不同烧结温度下体系介电性能的变化。研究发现,当组成为Ba(Ce0.08Ti0.92)O3时,试样在1 490℃保温2 h中可获得性能优良的电容器介质材料。体系的相对介电系数可达5 300,介质损耗仅为2.42%,绝缘电阻率为1.39×107Ω.cm,居里温度向室温方向移动至45℃。与此同时,借助扫描电镜对烧结体进行了微观形貌分析。结果表明,CeO2掺杂使Ce4 部分取代Ti4 ,有效地增加了体系的相对介电系数,降低了介质损耗,并起到了良好的居里峰展宽及移峰效应。此外,CeO2掺杂亦可抑制晶粒的异常长大,得到较高致密度的烧结体。 相似文献
8.
9.
A. R. Babar S. S. Shinde A.V. Moholkar C. H. Bhosale J. H. Kim K. Y. Rajpure 《半导体学报》2011,32(5):053001-8
Transparent conducting antimony doped tin oxide (Sb:SnO2) thin films have been deposited onto preheated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution. The structural, morphological, X-ray photoelectron spectroscopy, optical, photoluminescence and electrical properties of these films have been studied. It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the (211) and (112) planes. Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity. The compositional analysis and electronic behaviour of Sb:SnO2 thin films were studied using X-ray photoelectron spectroscopy. The binding energy of Sn3d5/2 for all samples shows the Sn4 bonding state from SnO2. An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb5 ions. The film deposited with 20 cc solution shows 70% transmittance at 550 nm leading to the highest figure of merit (2.11 × 10-3 Ω-1). The resistivity and carrier concentration vary over 1.22 × 10-3 to 0.89 × 10-3Ωcm and 5.19 × 1020 to 8.52 × 1020 cm-3, respectively. 相似文献
10.
正Effect of rhenium doping is examined in single crystals of MoSe_2 viz.MoRe_(0.005)Se_(1.995), MoRe_(0.001)Se_(1.999) and Mo_(0.995)Re_(0.005)Se_2,which is grown by using the direct vapor transport(DVT) technique. The grown crystals are structurally characterized by X-ray diffraction,by determining their lattice parameters a and c,and X-ray density.Also,the Hall effect and thermoelectric power(TEP) measurements show that the single crystals exhibit a p-type semiconducting nature.The direct and indirect band gap measurements are also undertaken on these semiconducting materials. 相似文献
11.
Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Se1.995, MoRe0.001Se1.999 and Mo0.995Re0.005Se2, which is grown by using the direct vapor transport (DVT) technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. 相似文献
12.
13.
In this work, undoped and Zn-doped copper oxide films were deposited on glass substrates at a substrate temperature of 250 ± 5°C
by using an ultrasonic spray pyrolysis technique. Electrical, optical, and structural properties of the films were investigated,
and the effect of Zn incorporation on these properties are presented. The variations of electrical conductivities and electrical
conduction mechanisms of all films were investigated in the dark and in the light. Optical properties of the produced films
were analyzed by transmission, linear absorption coefficient, and reflection spectra. The band gaps of the films were determined
by an optical method. The film structures were studied by x-ray diffraction. To obtain information about structural properties
in detail, the grain size (D), dislocation density (δ), and lattice parameters for preferential orientations were calculated. The elemental analyses were performed using energy-dispersive
x-ray spectroscopy. It was concluded that Zn has a strong effect, especially on the electrical and structural properties,
and the undoped and Zn-doped copper oxide (at 3%) films may be used as absorbing layers in solar cells due to their low resistivities
and suitable linear absorption coefficient values. 相似文献
14.
Transparent conducting antimony doped tin oxide（Sb:SnO2） thin films have been deposited onto preheated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution.The structural, morphological,X-ray photoelectron spectroscopy,optical,photoluminescence and electrical properties of these films have been studied.It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the（211） and（112） planes.Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity.The compositional analysis and electronic behaviour of Sb:SnO2 thin films were studied using X-ray photoelectron spectroscopy.The binding energy of Sn3d5/2 for all samples shows the Sn4+ bonding state from SnO2.An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb5+ ions.The film deposited with 20 cc solution shows 70%transmittance at 550 nm leading to the highest figure of merit(2.11×10-3Ω-1). The resistivity and carrier concentration vary over 1.22×10-3 to 0.89×10-3Ω·cm and 5.19×1020 to 8.52×1020 cm-3,respectively. 相似文献
15.
HAT-CN作为空穴注入层的高效白色荧光有机电致发光二极管 总被引：1，自引：1，他引：0
制作了HAT-CN作为空穴注入层的蓝、黄二基色分离的堆叠式高效有机发光二极管,器件结构为:ITO/2-TNATA或HAT-CN(xnm)/NPB(25nm)/ADN(30nm)∶TBPE(2%)∶DCJTB(1%)/Alq3(20nm)/LiF(1nm)/Al(100nm)。实验结果表明,HAT-CN对载流子的注入和色纯度的影响很明显。相比于传统器件将CuPc和2-TNATA作为空穴注入层,HAT-CN作为空穴注入层得到了更高的效率和色纯度,CIE色坐标x=0.3309,y=0.3472,电流效率达到6.4cd/A。 相似文献
16.
(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究 总被引：2，自引：0，他引：2
研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i 对 Sn4 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2 O5晶界缺陷势垒模型 相似文献
17.
研究并分析了 Ni3+ 掺杂和 Co2 + 掺杂对 Sn O2 压敏电阻致密度和电学非线性性能的影响。研究了掺Mn2 +对 Sn O2 · Ni2 O3· Nb2 O5压敏材料性能的影响。发现 x(Mn CO3)为 0 .10 %时 ,压敏电阻具有最高的视在电场(EB=6 86 .89V/ m m)和最好的电学非线性性能 (α=12 .9)。样品的收缩率和致密度变化趋势不一致 ,这是因为样品的致密度是由收缩率和 Mn CO3的挥发量两因素共同决定的 相似文献
18.
以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO:In)透明导电膜.利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO:In薄膜的结构、光电性能进行表征.结果表明,所有制备的ZnO:In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向.ZnO:In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10~(-3)Ω·cm.制备的薄膜可见光范围内透过率均在85%以上.Abstract： Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22～29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%. 相似文献
19.
Matteo Di Giosia Iryna Polishchuk Eva Weber Simona Fermani Luca Pasquini Nicola M. Pugno Francesco Zerbetto Marco Montalti Matteo Calvaresi Giuseppe Falini Boaz Pokroy 《Advanced functional materials》2016,26(30):5569-5575
Composites, materials composed of two or more materials—metallic, organic, or inorganic—usually exhibit the combined physical properties of their component materials. The result is a material that is superior to conventional monolithic materials. Advanced composites are used in a variety of industrial applications and therefore attract much scientific interest. Here the formation of novel carbon‐based nanocomposites is described via incorporation of graphene oxide (GO) into the crystal lattice of single crystals of calcite. Incorporation of a 2D organic material into single‐crystal lattices has never before been reported. To characterize the resulting nanocomposites, high‐resolution synchrotron powder X‐ray diffraction, electron microscopy, transmission electron microscopy, fluorescence microscopy and nanoindentation tests are employed. A detailed analysis reveals a layered distribution of GO sheets incorporated within the calcite host. Moreover, the optical and mechanical properties of the calcite host are altered when a carbon‐based nanomaterial is introduced into its lattice. Compared to pure calcite, the composite GO/calcite crystals exhibits lower elastic modulus and higher hardness. The results of this study show that the incorporation of a 2D material within a 3D crystal lattice is not only feasible but also can lead to the formation of hybrid crystals exhibiting new properties. 相似文献
20.
采用真空热蒸镀技术制备了NPB有机半导体薄膜和单层夹心结构器件,通过透射谱测量研究了薄膜的光学能隙、折射率和消光系数等光学性质,结果表明有机半导体薄膜具有直接带隙半导体的光学性质,并且其折射率色散性质遵循单振子模型.另外,通过分析器件的电流-电压特性研究了薄膜的电导率、载流子迁移率和载流子浓度等电学性质.这些实验结果对于有机光电子器件的结构设计具有一定的参考价值. 相似文献