用高低温循环加速试验评估光源模块长期贮存寿命的研究

Light source modules are the most crucial and fragile devices that affect the life and reliability of the interferometric fiber optic gyroscope （IFOG）. While the light emitting chips were stable in most cases, the module packaging proved to be less satisfactory. In long-term storage or the working environment, the ambient temperature changes constantly and thus the packaging and coupling performance of light source modules are more likely to degrade slowly due to different materials with different coefficients of thermal expansion in the bonding interface. A constant temperature accelerated life test cannot evaluate the impact of temperature variation on the performance of a module package, so the temperature cycling accelerated life test was studied. The main failure mechanism affecting light source modules is package failure due to solder fatigue failure including a fiber coupling shift, loss of cooling efficiency and thermal resistor degradation, so the Norris-Landzberg model was used to model solder fatigue life and determine the activation energy related to solder fatigue failure mechanism. By analyzing the test data, activation energy was determined and then the mean life of light source modules in different storage environments with a continuously changing temperature was simulated, which has provided direct reference data for the storage life prediction of IFOG.     

Application research on the sensitivity of porous silicon

Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si₃N₄) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/℃) and high stability.     

High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W.     

Measurement of CO2 concentration based on supercontinuum laser absorption spectroscopy

The concentrations of CO₂ were measured by the supercontinuum laser at normal temperature and variable temperature accurately in this paper. The absorption spectra of CO₂ at different concentrations(1.2%—9.0%) were measured in the wavelength range of 1 425—1 445 nm under the optical path of 26.4 m at 293 K and 1 atm. The experimental results showed that the positions of the primary and secondary absorption peaks(1 432 nm, 1 437 nm) were consistent with the HITRAN database. A linear model of concentration and signal intensity at 1 432 nm was established. The maximum relative error of the concentration measurement was 3.3%. The line intensities of 99.9% CO₂ in the 1 425—1 445 nm at different temperatures(298—373 K, interval of 15 K) were measured. The influence of temperature changes on the concentration measurement result was corrected and the relative error of the concentration measurement was reduced to 1.4%. Finally, the source of the uncertainty of the entire spectrum measurement system was analyzed and evaluated. This paper demonstrate that the supercontinuum laser can achieve the long-distance measurement of the CO₂ under normal temperature or variable temperature environment accurately, which provide an important reference for the long-distance gas detection on site and simultaneous detection of multi-component gases.     

Temperature sensor based on composite film of vanadium complex (VO2(3-fl)) and CNT

A vanadium complex (VO₂(3-fl)) and CNT composite film based temperature sensor is reported in this study. Surface-type silver electrodes were deposited on the glass substrates. A thin film of VO₂(3-fl) and CNT composite was coated as a temperature-sensing material on the top of the pre-patterned Ag electrodes. The temperature-sensing principle of the sensor was based on the conductivity change of the coated sensing element upon heating or cooling processes. DC and AC (100 Hz) resistances of the temperature sensor decreased quasi-linearly with increasing the temperature in the range of 25-80 ℃. The overall resistance of the sensor decreases by 1.8-2.1 and 1.9-2.0 times at DC and AC voltage, respectively. The resistance temperature coefficients of the sensor were in the range of -(0.9-1.3)% and -(1.1-1.3)% at DC and AC voltage, respectively. The properties of the sensor studied in this work, make it beneficial to be used in the instruments for environmental monitoring of temperature.     

利用磁控溅射在GaN/蓝宝石衬底上生长ZnO薄膜

Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on the structural and optical properties of these films was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD results indicated that ZnO films exhibited wurtzite symmetry and c-axis orientation when grown epitaxially on n-GaN/sapphire. The best crystalline quality of the ZnO film is obtained at a growth temperature of 600 ℃. AFM results indicate that the growth mode and degree of epitaxy strongly depend on the substrate temperature. In PL measurement, the intensity of ultraviolet emission increased initially with the rise of the substrate temperature, and then decreased with the temperature. The highest UV intensity is obtained for the film grown at 600 ℃ with best crystallization. oindent     

Structural and optoelectronic properties of sprayed Sb:SnO_2 thin films:Effects of substrate temperature and nozzle-to-substrate distance

The influence of substrate temperature and nozzle-to-substrate distance（NSD） on the structural,morphological, optical and electrical properties of Sb:SnO₂ thin films prepared by chemical spray pyrolysis has been analyzed.The structural,morphological,optical and electrical properties were characterized by using XRD,SEM, UV-visible spectrophotometry and Hall effect measurement techniques.It was seen that the films are polycrystalline, having a tetragonal crystal structure with strong orientation along the（200） reflection.The pyramidal crystallites formed due to coalescence were observed from SEM images.The values of highest conductivity,optical transmittance and figure of merit of about 1449（Ω·cm）^-1,70%and 5.2×10^-3□/Ω,respectively,were observed for a typical film deposited using optimal conditions（substrate temperature = 500℃and NSD = 30 cm）.     

Effect of temperature and moisture on the luminescence properties of silicone filled with YAG phosphor

In order to determine the environmental effects on the luminescence properties of a phosphor layer for high-power light emitting diodes, a high humidity and temperature test (85 ℃/85%RH) and a thermal aging test (85 ℃) were performed on silicone/YAG phosphor composites. The luminescence properties of silicone/phosphor composites are monitored by a fluorescence spectrometer. The results show that high temperature could result in an increase in conversion efficiency of composites during the early aging stage and red shift of YAG phosphor; and high humidity could result in a significant decrease in conversion efficiency of composites while having a small influence upon the optimal excitation wavelength of the YAG phosphor.     

Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

InGaN films were deposited on(0001) sapphire substrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy(SEM) and atomic force microscopy(AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.     

Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films

The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm² was obtained for the sample annealed at 950℃. In this work, we confirmed that the formation mechanism of ohmic contacts on AlN was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au₂Ti and AlAu₂ alloys. This result provided a possibility for the preparation of AlN-based high-frequency, high-power devices and deep ultraviolet devices.     

真空荧光显示屏恒定及步进应力加速寿命试验的研究

为了解决在较短的时间内预测真空荧光显示屏（VFD）寿命的问题,降低寿命预测成本,通过加大灯丝温度进行了恒定和步进应力相组合的加速寿命试验,研究制定了其加速寿命试验的设计方案。应用威布尔分布函数描述其寿命分布,利用最小二乘法完成了试验数据的统计和分析,并开发了寿命预测软件。研究结果表明．试验设计方案是正确可行的,VFD的寿命服从威布尔分布,其加速模型符合阿伦尼斯方程,加速参数的精确计算确保以后在很短的时间内便可估算出VFD在正常应力下的寿命。     

Si微波功率晶体管加速寿命试验夹具的设计

温度应力的加速寿命试验结果与所用夹具的耐温性及壳温的精确测量与控制直接相关。通过大量研究,发现一体式夹具在试验壳温提高到某一值时性能迅速劣化,因此设计符合高温下使用的分离式夹具是加速寿命试验顺利进行的必要条件。提供了两种加速寿命试验夹具的设计思路,并用于Si微波功率管加速寿命试验,通过步进应力试验和恒定应力试验,获取了该Si微波功率管加速寿命。分体夹具可耐受的试验温度在260℃以上,为加速寿命试验提供了温度应力的提升空间。     

金铝键合寿命评价方法研究

由于金属间化合物的生成,会使金铝键合的接触电性能受到影响.从金属间化合物生成这一单一失效机理出发,以失效物理为理论基础,通过恒定高温加速和高温步进加速试验,针对不同温度下的金铝键合寿命做出评价,并给出键合寿命评价流程.     

晶体管输出型光电耦合器长期储存寿命研究

介绍了两种长期储存寿命的考核方法,通过对晶体管输出型光电耦合器进行加速寿命试验,记录数据并进行统计分析,利用寿命模型推算出了晶体管输出型光电耦合器常温下的储存寿命。     

铝电解电容器预期寿命的研究

铝电解电容器是“有限寿命”的元件,其预期寿命常用Arrhenius模型和Eyring模型来估算。笔者应用电子计算机对寿命实验数据进行数理统计和曲线拟合来快速估算产品寿命,与实际试验结果有较好的吻合。提出改善和提高产品寿命,采取增大产品体积、降低施加电压和降低使用环境温度等措施是有益的。     

HALT在引信寿命评估方面的应用

通过对引信寿命评估试验和高加速寿命试验（HALT）的特点进行分析,针对目前引信寿命试验的不足之处,提出了利用HALT中的有效信息来改进引信寿命评估的方法,例如：通过选择积极的加速因子和估算试验所需的时间来改进加速寿命试验,使之能够快速、精确地评估产品的寿命;在引信的研制过程中,当样本量较小时,可以利用改进的加速寿命试验来进行引信寿命的评估,使之能够快速地评估引信的中位寿命。     

斯特林制冷机污染退化的加速寿命模型

基于制冷机的污染失效机理、材料出气特性,探索性地提出制冷机污染退化的加速寿命模型,阐述了各模型参数的物理意义,并利用4300h的加速试验数据建模拟合,发现与加速寿命模型有较好的符合关系,最后提出外推到常规条件寿命的加速系数的计算方法.由于试验数量少,所得模型尚不成熟,需要更多的后续试验来验证,但该寿命模型的提出,对于实现快速寿命评价和考核具有参考价值.     

威布尔分布下VFD恒定应力加速寿命试验与统计分析

为了精确地估计真空荧光显示器(VFD)的可靠性寿命,节省试验测试时间,通过建立加速寿命试验模型开展了4组恒定应力加速寿命试验,采用威布尔函数描述VFD寿命分布,利用最小二乘法(LSM)估计威布尔参数,完成了试验数据的统计分析,并自行开发了寿命预测软件,确定了加速寿命方程,实现了VFD的寿命估计。数值结果表明,试验设计方案是正确可行的,VFD的寿命服从威布尔分布,其加速模型符合线性阿伦尼斯方程,每个加速应力水平下VFD的失效机理不变,精确计算出的VFD寿命对其生产厂商和技术人员具有重要的指导意义。     

一种CCD工作寿命预计方法

介绍了一种适用于电荷耦合器件(CCD)的工作寿命预计方法。对CCD的失效模型进行了分析,并进行加速寿命试验,试验结果与理论分析结果较好地吻合。试验结果表明,对于一款成熟应用的CCD,其工作寿命值与其质量等级有直接的关系;质量等级越高的器件,其工作寿命值也越长。     

稳态工作条件下功率晶体管结温的测量与控制

为了在试验周期中了解晶体管的结温,提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法.着重介绍了基于理想pn结肖克莱方程的结温测量原理,及试验过程中结温测控的技术难点和解决方案,指出了晶体管结温计算中存在的问题和修正办法,实验结果证明了该方法的可行性.