Vertical-Cavity Surface-Emitting Lasers With Integrated Excitation of Surface Plasmon Polariton Modes

We report the excitation of surface plasmon polaritons (SPPs) on a thin Au layer integrated on top of the mirror of a vertical-cavity surface-emitting laser (VCSEL) along with their subsequent extraction to air. Gratings etched into the Au layer are used to couple the light in to and out of the metal film. The polarization properties of the optical emission from out-coupling gratings placed 5 $mu$ m away from the central optical aperture are used to confirm the coupling of the VCSEL light into and out of the SPP modes. The result paves the way to compact integrated plasmonic devices.      

Recent advancements in surface plasmon polaritons-plasmonics in subwavelength structures in microwave and terahertz regimes

This paper presents a review of recent investigational studies on exciting Surface Plasmon Polaritons (SPPs) in MicroWave (MW) and TeraHertZ (THz) regimes by using subwavelength corrugated patterns on conductive or metal surfaces. This article also describes SPP Microstrip (MS) structures at microwave and terahertz frequencies, and compares their significance with that of conventional MS Transmission Lines (TL), in order to tackle the key challenges of high gain, bandwidth size, compactness, TL losses, and signal integrity in high-end electronic devices. Because they have subwavelength properties, surface plasmon polaritons are gaining attention for their improved performance and ability for miniaturization in high-speed dense circuits. They possess comparably minuscule wavelength compared to incident light (photons). Consequently, they can demonstrate stronger spatial confinement and higher local field intensity at optical frequencies. In addition to engineering spoof SPP waveguides, which are created by engraving grooves and slits on metal surfaces to allow operation on at low frequencies (microwave and terahertz), semiconductors with smaller permittivity values and thus lower free charge carrier concentration have been demonstrated as a potential candidate in plasmonic devices. If necessary, further tuning of semiconductor-based SPP structures is aided by controlling the charge carrier concentration through doping, or by external stimuli such as optical illumination or thermal excitation of charge carriers from valence to conduction bands. This article conclusively covers previously elucidated perspectives on manipulating SSPPs in the MW and THz ranges, and emphasizes how these could steer next-generation plasmonic devices.     

Surface plasmon–polariton mediated emission of light from top-emitting organic light-emitting diode type structures

Surface plasmon–polariton (SPP) modes may act as significant loss channels in organic light-emitting diode devices. We present experimental data illustrating that by the introduction of an appropriately scaled microstructure into a device, some of this lost power may be recovered as light. It is shown that in order to maximize this SPP-mediated light emission in a top-emitting light-emitting diode (TOLED) the plasmon modes associated with the two metal surfaces of the cathode must be coupled together. Data from grating-coupled and index-coupled SPP schemes are presented, and we show that photoluminescence emission from a structure containing a microstructured thin metal film that supports coupled SPPs is at least 50 times more effective than a similar planar structure. Experimental data is also presented from a structure containing a thin metal film whose profile contains a wavelength scale microstructure on a single interface. These data suggest that such a device geometry has the potential to increase the efficiency of top-emitting organic light-emitting devices.     

形状双折射金属表面等离激元的特征长度

针对p偏振,研究形状双折射金属和常规介电材料界面的表面等离激元(SPP)。基于形状双折射金属介电常数的双轴各向异性和SPP的色散关系,分别在X方向和Y方向讨论SPP波长、传播距离以及在两种介质中的穿透深度等特征长度的变化规律。另外,分别讨论形状双折射金属的3个结构参数对SPP特征长度的影响,发现X方向的结构周期变化只影响Y方向的SPP特征长度,Y方向的结构周期变化只影响X方向的SPP特征长度,纳米孔半径的变化同时影响X方向和Y方向的SPP特征长度。     

多束表面等离子体干涉场的模拟研究

为了找出多束表面等离子体激元干涉的分布情况,采用严格的解析推导方式,建立了多束表面等离子体激元干涉场的理论模型,在此基础上数值模拟了多束表面等离子体激元干涉产生的2维及3维点阵结构的特性.结果表明,干涉场分辨率可达到1/6波长,并与普通激光多光束干涉场在光场的形状上一致.该研究有助于多束表面离子体激元光刻的进一步研究和阵列型纳米级光学器件的制造.     

基于SPP的1550纳米光波导的超长传输特性

采用严格电磁理论研究了介质-金属-介质型光波导激发表面等离子激元(SPPs)的电磁特性,对比分析了SPP波在SiO2/Ag/SiO2和Si/Ag/Si光波导的传输距离。研究表明,对于1550nm光通信波长入射光及10nm厚的金属银膜层,SiO2/Ag/SiO2光波导中非对称SPP的传输距离可达40cm,明显高于对称SPP波的传输距离,也显著高于非对称SPP波在Si/Ag/Si波导中的传输距离,具有超长传输距离;随着金属层厚度的增加SPP波的传输距离明显减小,当银层厚度超过50nm后,非对称的SPP在SiO2/Ag/SiO2及Si/Ag/Si波导中的传输距离趋于一致,约为200nm;此时银层厚度变化对SPP波传输距离的影响明显减弱。     

Manipulable and Hybridized,Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods

Manipulating stimulated‐emission light in nanophotonic devices on scales smaller than their emission wavelengths to meet the requirements for optoelectronic integrations is a challenging but important step. Surface plasmon polaritons (SPPs) are one of the most promising candidates for sub‐wavelength optical confinement. In this study, based on the principle of surface plasmon amplification by the stimulated emission of radiation (SPASER), III‐Nitride‐based plasmonic nanolaser with hybrid metal–oxide–semiconductor (MOS) structures is designed. Using geometrically elliptical nanostructures fabricated by nanoimprint lithography, elliptical nanolasers able to demonstrate single‐mode and multimode lasing with an optical pumping power density as low as 0.3 kW cm^?2 at room temperature and a quality Q factor of up to 123 at a wavelength of ≈490 nm are achieved. The ultralow lasing threshold is attributed to the SPP‐coupling‐induced strong electric‐field‐confinement in the elliptical MOS structures. In accordance with the theoretical and experimental results, the size and shape of the nanorod are the keys for manipulating hybridization of the plasmonic and photonic lasing modes in the SPASER. This finding provides innovative insight that will contribute to realizing a new generation of optoelectronic and information devices.     

亚波长金属光栅的凹槽深度对太赫兹伪表面等离子体影响

从理论上详细研究了一维亚波长金属光栅的凹槽深度对太赫兹伪表面等离子的影响。分别对一维标准亚波长金属光栅和缺陷亚波长金属光栅进行了研究。电场分布情况采用了COMSOL软件进行模拟。得到的结论是:对于一维标准亚波长金属光栅,沿金属光栅传播的表面等离子体取决于槽深度,较深的槽具有更强的束缚能力;对于具有缺陷的光栅结构,电场强度的分布特点取决于缺陷槽的深度,这归功于缺陷槽对光的反射和散射。基于这一理论研究,这两种不同的亚波长金属光栅结构能为太赫兹器件如波导、衰减器及滤波器发展提供新的途征。     

10 Gbps Optical Signal Transmission via Long‐Range Surface Plasmon Polariton Waveguide

We demonstrate 10 Gbps optical signal transmission via long‐range surface plasmon polaritons (LR‐SPPs) in a very thin metal strip‐guided geometry. The LR‐SPP waveguide was fabricated as a 14 nm thick, 2.5 μm wide, and 4 cm long gold strip embedded in a polymer and pigtailed with single‐mode fibers. The total insertion loss of 16 dB was achieved at a wavelength of 1.55 μm as a carrier wave. In a 10 Gbps optical signal transmission experiment, the LR‐SPP waveguide exhibits an excellent eye opening and a 2.2 dB power penalty at 10^?12 bit error rate. We confirm, for the first time, that LR‐SPPs can efficiently transfer data signals as well as the carrier light.     

Surface Plasmon Amplification in Planar Metal Films

The propagation and amplification of surface plasmon polaritons (SPPs) is studied at the interfaces between metals and active media. A permittivity renormalization technique is proposed and developed to obtain an explicit analytic expression for the critical gain required to achieve infinite SPP propagation length. A specific multiple quantum-well (MQW) system is identified as a prospective medium for demonstrating efficient SPP amplification at telecommunication frequencies. The proposed system may have a strong impact on a variety of photonic devices ranging from plasmonic nanocircuits, subwavelength transmission lines and plasmonic cavities to nanosized transducers.     

太赫兹表面等离激元的研发与应用

表面等离激元的研究推动了超分辨成像、高灵敏传感、片上集成系统等应用的发展。将其应用在太赫兹这一高穿透性、高带宽波段时必然会带来更多迷人的功能。由于太赫兹波段频率较低,表面等离激元具有许多不同于可见光的现象。通过控制金属表面微纳结构或半导体材料与太赫兹波之间的相互作用,人们实现了对太赫兹波表面波的控制。本文综述了太赫兹波段表面等离激元的基本原理和研究历程,介绍了近年来在此波段开展的热门研究成果,如波前整型、片上波导、可调谐器件等,最后总结了这一领域的发展瓶颈并展望了未来主要发展方向,希望能够进一步推动太赫兹波段表面等离激元应用的发展。     

Spin‐Controlled Integrated Near‐ and Far‐Field Optical Launcher

With the evergrowing demand for miniaturization of photonic devices, the integration of different functionalities in a single module is highly desired for the next generation of ultracompact photonic devices. Optical modules based on the near field and scattered far field are both key elements in the construction of nanophotonic devices. However, integrating the near‐ and far‐field functionalities into a single module is a great challenge, which hinders the integration and minimization of optical devices. Here, a bifunctional integrated near‐ and far‐field optical launcher with a single metasurface structure is theoretically proposed and experimentally demonstrated, where the unidirectional launching of surface plasmon polaritons (SPPs) and the focusing of scattered far fields can be simultaneously achieved. Moreover, the SPP propagating direction and the real/virtual focus of the far‐field scattering can be actively controlled by the spin state of the incident light. With the additional degree of freedom provided by the positions of the metasurface elements, the optical performances of this bifunctional structure can be compared to the one with single functionality. The work provides a new platform for the integration and control of different optical components at subwavelength scale, and opens a way to design multifunctional optical devices for the future.     

太赫兹表面等离激元及其应用

金属或半导体与介质分界面上的电子与光子互作用形成的光学表面等离激元(SPP)以及人工超构材料或二维原子晶体材料表面上的电子与太赫兹波或微波互作用形成的人工表面等离激元(SSP)是小型化与集成化太赫兹有源/无源器件和太赫兹超分辨率成像的重要物理基础。随着太赫兹科学技术的发展,太赫兹表面等离激元研究在国际上受到很大关注。本文介绍了传统的光学表面等离激元及其发展,详细阐述了太赫兹波段的人工表面等离激元(SSP)和石墨烯表面等离激元(GSP)的基本原理和发展历程,对表面等离激元在太赫兹波段的新型辐射源、无源器件、超分辨率成像及其他领域的应用进行了较为全面的总结和评述,并对该领域未来进一步发展的方向进行了展望。     

半导体器件与集成电路制造中的亚微米技术

本文叙述了当前世界上亚微米、深亚微米技术的发展趋势,分析了我国亚微米技术的现状,最后介绍了机械电子工业部第十三研究所在亚微米技术方面的进展及其在半导体器件与集成电路制造中的成功应用。     

基于对称型齿波导和纳米盘的类EIT和慢光效应

设计了一种新型的基于金属表面等离子体激元（SPPs）的亚波长金属-绝缘体-金属（MIM）型类电磁诱导透明（EIT）系统,该系统由一个直波导及其两边对称的齿形腔和纳米盘耦合而成。利用耦合模式理论对结构进行分析,并通过时域有限差分方法（FDTD）进行数值模拟。当齿形腔和纳米盘的共振频率相近,可以获得类EIT效应,改变齿形腔的长度和纳米盘的半径可以调节透明窗的位置。该装置可以用作高性能的类EIT滤波器,透过率高达77.5%,半高宽低至35.5 nm,群指数高达65,为高度集成光网络提供了一种新的方法,可应用于波长选择器、超快开关、光存储等设备。     

Light Emission Characteristics of Metal/Insulator/Metal and Metal / Insulator/ Si Tunnel Junctions Mediated by Surface Plasmon-polaritons

The Au/Al2O3/Al metal/insulator/metal junction（MIMJ） and Au/SiO2/Si metal/insulator/Si junction（MISJ） have been constructed successfully. The light emission of these junctions was mediated by surface plasmon-polaritons（SPPs） under surface roughness. The light emission from MISJ was more uniform and stable than that from MIMJ. The light power of MISJ was about 2-3 orders higher than that of MIMJ. The light emission spectrum of MISJ was analyzed especially. In the spectrum, there was one main peak located at the wavelength of 610 nm-640 nm, which was mainly due to the couple of SPP with the surface roughness at the Au/air and Au/SiO2 interfaces. A weak peak located at the shorter wavelength region in the spectrum was also found, which was caused by the direct radiation of doped-Si plasma oscillation.     

Charge-coupled structures with self-aligned submicron gaps

A technique for fabricating charge-coupled devices with submicron gaps is described. The method relies on a "shadowing" effect produced by oblique deposition of the metal in an otherwise standard vacuum evaporation process. The biggest advantage of the technique is its extreme simplicity, particularly for one-dimensional CCD structures. The feasibility of the technique has been demonstrated for two-and three-phase devices; the two-phase structure was a 32-bit shift register which has been operated at up to 10 MHz. With some additional processing, the technique can be used to make bidirectional CCD arrays as required in area imagers and serpentine shift registers.     

迎接亚微米技术时代的到来

半导体与信息技术是实现未来技术革命、产业现代化和社会文明的先导技术,其基础是半导体器件与集成电路及集成传感器。要进一步提高现有半导体产品的性能水平,关键是实现亚微米、深亚微米加工技术。本文着重叙述了当前世界上亚微米技术的发展趋势。最后简要地分析了我国亚微米技术的现状和发展。     

An improved DC model for circuit analysis programs for submicronGaAs MESFET's

An improved submicron GaAs MESFET model is presented which is suitable for nonlinear small-signal circuit designs. The Kacprzak-Materka model, which simulates the dc characteristics of large signal devices has been modified to predict the behavior of submicron devices. In this modification the concept of a shift in threshold voltage has been introduced. It has been shown that without taking into account the shift which is caused by the submicron geometry it is not possible to predict the device characteristics. Small-signal devices of different aspect ratio have been modeled with greater accuracy than that of other models. As far as possible we have determined the model parameters from the device physics and established the advantages of this approach over terminal methods. The modified model should be a useful tool for the designing of future integrated circuits with submicron gate length MESFET's     

基于太赫兹等离激元的半导体表面生化薄膜光谱检测

我们提出了一种利用太赫兹表面等离激元对放置在半导体表面的生化薄膜进行光谱测量的新方法。我们从理论上证明了半导体材料对其上传输的太赫兹表面等离子体波具有较强的表面束缚性,从而提高太赫兹波与半导体表面的生化薄膜之间的相互作用。通过采用太赫兹时域光谱测量系统,我们从实验上分别得到了洋葱表皮的太赫兹表面等离子体波和自由空间太赫兹波透射波谱。实验结果表明,当测量对象是厚度仅为自由空间太赫兹波波长的约百分之一的单层洋葱表皮时,表面等离子体波的透射波谱与自由空间太赫兹波透射波谱相比具有更加多的特征吸收峰。