High Piezoelectric and Dielectric Properties of La-Doped 0.3Pb(Zn1/3Nb2/3)O3–0.7Pb(ZrxTi1−x)O3 Ceramics Near Morphotropic Phase Boundary

La-doped 0.3Pb(Zn_1/3Nb_2/3)O₃–0.7Pb(Zr _x Ti_{1− x} )O₃ ( x =0.5–0.53) piezoelectric ceramics with pure perovskite phase were synthesized by a two-step hot-pressing route. The piezoelectric properties of various compositions near the morphotropic phase boundary (MPB) were systematically investigated. Not only was the exact MPB of this system determined via X-ray diffractometry analysis, but also the peak of piezoelectric properties was found near the MPB. The optimum piezoelectric properties of this series were observed in the specimen with Zr/Ti=51/49. The piezoelectric coefficient ( d ₃₃) and electromechanical coupling factor ( k _p) were 845 pC/N and 0.70, respectively, which have not been reported in this system so far. Large permittivity (ɛ_r=4088) and permittivity maximum (ɛ_m=29 500) were also obtained for the poled specimens. The temperatures ( T _max) of the permittivity maxima ranged from 206° to 213°C with various Zr/Ti ratios.     

Phase Structure and Electrical Properties of (K0.48Na0.52)(Nb0.95Ta0.05)O3-LiSbO3 Lead-Free Piezoelectric Ceramics

(1− x )(K_0.48Na_0.52)(Nb_0.95Ta_0.05)O₃– x LiSbO₃ [(1− x )KNNT− x LS] lead-free piezoelectric ceramics were prepared by the conventional solid-state sintering method. A morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was identified in the composition range of 0.03< x <0.05. The ceramics near the MPB exhibit a strong compositional dependence and enhanced electrical properties. The (1− x )KNNT– x LS ( x =0.04) ceramics exhibit good electrical properties ( d ₃₃=250 pC/N, k _p=45.1%, k _t =46.3%, T _c=348°C, T _{o − t} =74°C, P _r=25.9 μC/cm², E _c=10.7 kV/cm, ɛ_r∼1352, tan δ∼3%). These results show that (1− x )KNNT– x LS ceramic is a promising lead-free piezoelectric material.     

Lanthanum-Modified (1 – x)(Bi0.8La0.2)(Ga0.05Fe0.95)O3·xPbTiO3 Crystalline Solutions: Novel Morphotropic Phase-Boundary Lead-Reduced Piezoelectrics

(1 – x )(Bi_0.8La_0.2)(Ga_0.05Fe_0.95)O₃· x PbTiO₃ (BLGF-PT) crystalline solutions have been fabricated by solid-state reactions. BLGF-PT has single perovskite phase structure with a rhombohedral–tetragonal (FE_r-FE_t) morphotropic phase boundary (MPB) at a PT content of x = 0.43. Lanthanum substitution has been found to increase the insulation resistance and decrease the coercive field down to 20 kV/cm, which results in significant improvements in dielectric and piezoelectric properties of BLGF-PT. The dielectric constant, loss tangent, Curie temperature, remnant polarization, piezoelectric d ₃₃ constant, and planar coupling factor of 1760, 0.05, 264°C, 33 μC/cm², 295 pC/N, and 0.36, respectively, have been achieved for BLFG-PT in the vicinity of the MPB. Compared with conventional Pb(Zr,Ti)O₃ (PZT) piezoelectric ceramics, the BLGF-PT is a competitive alternative piezoelectric material with decreased lead content.     

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg1/3Ta2/3)O3−0.2PbZrO3−xPbTiO3 Ternary System

Morphotropic phase boundary (MPB) compositions separating rhombohedral and tetragonal phases in the (1− x − y )Pb(Mg_1/3Ta_2/3)O₃– y PbZrO₃– x PbTiO₃ (PMT–PZ–PT100 x ) ternary solid solution system were characterized using X-ray diffraction and dielectric, piezoelectric properties. This work focused on compositions with a PZ content fixed at y =0.2, with an MPB composition found to be located at x =0.4. Piezoelectric coefficients and dielectric permittivity were found to be on the order of d ₃₃=580 pC/N and 4100, respectively. Acceptor modification using manganese was found to induce a "hardening" effect in 0.4PMT–0.2PZ–0.4PT, with decreased piezoelectric coefficients d ₃₃ and dielectric loss and increased mechanical quality factor Q . Piezoelectric coefficients d ₃₃, Q values, and dielectric loss were found to be 500 pC/N, 2000, and 0.4%, respectively, for 0.4PMT–0.2PZ–0.4PT with MnO₂ dopant levels around 0.5 wt%. The figure of merit (product of Q and d ₃₃) was found to be on the order of 1 × 10⁶, significantly higher when compared with other hard piezoelectric PZT materials. Specifically, the PMT–PZ–PT materials may be attractive candidates for high-power ultrasonic applications, particularly fine-scale components that require relating high permittivities.     

Microstructure and Electrical Properties of (K, Na, Li)NbO3–Pb(Zr,Ti)O3 Piezoelectric Ceramics

A new type (1− x )(K_0.485Na_0.485Li_0.03)NbO₃– x Pb(Zr_0.53Ti_0.47)O₃ piezoelectric ceramics was fabricated by conventional ceramics sintering technique. Their microstructure and electrical properties of the ceramics were also studied. X-ray diffraction and scanning electron microscopy patterns indicate that all ceramics samples exhibit a pure perovskite and highly dense structure, and the coexistence of the tetragonal and orthorhombic phases is formed; The ceramic with x =0.75 exhibits the following excellent properties: d ₃₃=363 pC/N, k _p=63%, Q _m=142, ɛ_r=1590, tan δ=1.70%, P _r=28.6 μC/cm², E _c=0.89 kV/mm, T _c=295°C. These results indicate that the ceramic is a promising candidate for piezoelectric ceramics in practical applications.     

Processing and Electrical Properties in Lead-Based (Pb(Mg1/3Nb2/3)O3, Pb(Yb1/2Nb1/2)O3, PbTiO3) Systems

Lead-based ferroelectric (FE) ceramics exhibit superior electromechanical properties; therefore, there has been an increased focus on developing new lead-based FE materials with high Curie temperature ( T _c) and enhanced properties. The aim of this study was to investigate new compositions in the Pb(Mg_1/3Nb_2/3)O₃–Pb(Yb_1/2Nb_1/2)O₃–PbTiO₃ ( PMN–PYbN–PT) system to enhance the electromechanical properties while increasing the T _c and lowering the sintering temperature. The 0.575[0.5PMN–0.5PYbN]–0.425PT composition at PMN/PYbN (50/50) mole ratio were prepared by reactive sintering PMNT and PYbNT powder mixtures at 950°–1200°C for 4 h. PMNT and PYbNT powders were calcined via the columbite method. Samples were prepared by cold isostatic pressing at 80 MPa. Dense and fully perovskite 0.575[0.5PMN–0.5PYbN]–0.425PT ceramics were fabricated at 975°C for 4 h, and these samples displayed a remnant polarization ( P _r) of 32 μ C/cm², coercive field ( E _c) of 17 kV/cm, and a piezoelectric charge coefficient ( d ₃₃) of 475 pC/N. It is proposed that this ternary system can be tailored for various applications.     

Elastic, Piezoelectric, and Dielectric Properties of 0.71Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 Crystals Obtained by Solid-State Crystal Growth

Single crystals with the composition of 0.71Pb(Mg_1/3Nb_2/3)O₃–0.29PbTiO₃ (PMNT29) were grown using the solid-state crystal growth (SSCG) method. Compared with the conventional Bridgman grown crystals, the SSCG PMNT29 crystals were found to possess comparable piezoelectric, dielectric, and electromechanical properties ( d ₃₃∼1500 pC/N, ɛ^T ₃₃/ ɛ ₀∼5400 and k ₃₃∼90%), with the same Curie temperature ( T _C) and ferroelectric phase transformation temperature ( T _{R – T} ). The full set of elastic, piezoelectric, and dielectric material constants were determined by the resonance method for the SSCG grown PMNT29 crystals according to IEEE standards and compared with Bridgman grown crystals. The dielectric temperature behavior and the strain field characteristics were investigated, demonstrating excellent performance over the temperature range from room temperature to 95°C. Strain behavior at high electric fields was found to be different from Bridgman growth crystals and believed to be attributed to different domain structures.     

Structure and Dielectric Properties of Pb(Sc2/3W1/3)O3–Pb(Zr/Ti)O3 Relaxors

The structure and dielectric properties of (1− x )Pb(Sc_2/3W_1/3)O₃–( x )Pb(Zr/Ti)O₃ ceramics have been investigated over a full substitution range. All compositions with x < 0.5 adopt a cubic perovskite structure; however, for x ≤ 0.25 a doubled cell results from a 1:1 ordered distribution of the B-site cations. The structural order in Pb(Sc_2/3W_1/3)O₃ (PSW) can be described by a random-site model with one cation site occupied by Sc³⁺ and the other by a random distribution of (Sc_1/3³⁺W_2/3⁶⁺). The ordering is destabilized in solid solutions of PSW with PbZrO₃ (PSW–PZ), but stabilized by PbTiO₃ in the (1− x )PSW–( x )PT system. The changes in order are accompanied by alterations in the dielectric response of the two systems. For PSW–PZ the temperature of the permittivity maximum ( T _ɛ,max) increases linearly with x ; however, for PSW–PT T _ɛ,max decreases in the ordered region (up to x = 0.25) and then increases rapidly as the order is lost. Similar effects were produced by modifying the degree of order of (0.75)PSW–(0.25)PT; when the order parameter was reduced from ∼1.0 to ∼0.65, T _ɛ,max increased by more than 60°C.     

Phase Transformation and Tunable Piezoelectric Properties of Lead-Free (Na0.52K0.48−xLix)(Nb1−x−ySbyTax)O3 System

Lead-free (Na_0.52K_{0.48− x} )(Nb_{1− x − y} Sb _y )O₃- x LiTaO₃ (NKNS–LT) piezoelectric ceramics have been fabricated by ordinary sintering. A special attention was paid to the composition design through which the dielectric and piezoelectric properties of the (Li, Ta, Sb) modified NKN systems were significantly promoted. A property spectrum was generated with a particular discussion on the relationship between the Sb content, the LT content, the polymorphic phase transition, and the electrical properties and their temperature stability. Excellent and tunable electrical properties of d ₃₃=242–400 pC/N, k _p=36%–54%,     , and T _c=230°–430°C demonstrate a tremendous potential of the compositions studied for device applications.     

Characterization of the Piezoelectric Properties of Pb0.98Ba0.02(Mg1/3Nb2/3)O3–PbTiO3 Epitaxial Thin Films

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) (70/30) thin films were deposited by pulsed laser deposition using two growth strategies: adsorption controlled deposition from lead-rich targets (∼25–30 mass%) and lower-temperature deposition ( T _d≤600°C) from targets containing a small amount of excess lead oxide (≤3 mass %). The substrates used were (001) SrRuO₃/LaAlO₃. Typical remanent polarization values ranged between 12 and 14 μC/cm² for these films. The longitudinal piezoelectric coefficient ( d _33,f) was measured using in situ four-circle X-ray diffraction, and the transverse coefficient ( d _31,f or e _31,f) was measured using the wafer flexure method. d _33,f and e _31,f coefficients of ∼300–350 pm/V and ∼−11 C/m² were calculated, respectively. In general, the piezoelectric coefficients and aging rates were strongly asymmetric, suggesting the presence of a polarization bias. The large, extremely stable piezoelectric response that results from poling parallel to the preferred polarization direction is attractive for miniaturized sensors and actuators.     

Effects of Sintering Atmosphere on Densification Behavior and Piezoelectric Properties of Pb(Ni1/3Nb2/3)O3–PbZrO3 Ceramics

Densification of polycrystalline Pb(Ni_1/3Nb_2/3)O₃–PbTiO₃–PbZrO₃ (PNN–PT–PZ) specimens was enhanced as the partial pressure of O₂ in the sintering atmosphere was increased. This observation was attributed to the increase in the internal pressure of a closed pore due to the thermal decomposition of PbO at a low partial pressure of O₂. The relative dielectric permittivity (ε_r), d ₃₃, k _p, and grain size of sintered specimens were also increased as the partial pressure of O₂ in the sintering atmosphere was increased. The observed dependence of piezoelectric properties on the partial pressure of O₂ was discussed in terms of the enhanced formation of the A-site vacancy ( V "_Pb) or the suppression of the B-site defect ( V ¨_O) as the oxygen potential increased.     

Intrinsic Nonstoichiometry in Single-Phase Pb(Zr0.5Ti0.5)O3

Two-phase crucibles made of Pb(Zr,Ti)O₃ with small additions of either PbO or (Zr _x Ti _1-x )O₂, which provide atmospheres of constant PbO activity, permit study of intrinsic nonstoichiometry by thermogravimetry. The width of the single-phase region can be determined by alternate equilibration of a sample with crucible atmospheres of high and low PbO activity. The width of this region for Pb(Zr_0.5Ti_0.5)O₃ is 2.48 mol% PbO at 1100°C.     

Properties of (1−x)PZT–xSKN Ceramics Sintered at Low Temperature Using Li2CO3

The densification of a Sr, K, Nb (SKN)-doped PZT ceramic has been modified using different flux chemistries. The most successful flux is Li₂CO₃ of which a 0.9 mol% addition promotes almost complete densification at 900°C. Structure property relationships in the Li₂CO₃ flux-sintered (1− x )PZT– x SKN system (0.01< x <0.05) are compared with conventionally sintered material. Consequences of flux interactions include increased conductivity and a shift in the optimum (1− x )PZT– x SKN composition. The flux sintered PZT–0.03SKN composition exhibits a high field d ₃₃ piezoelectric coefficient of 640 pm/V and a Curie temperature of ∼350°C. The unipolar polarization hysteresis loss is ∼23 kJ/m³ and varies little with temperature up to 150°C. Finally, we demonstrate successful cofiring of a multilayer structure at 900°C using Li₂CO₃-fluxed PZT–SKN and pure silver electrodes.     

Effect of Lead Content on the Structure and Electrical Properties of Pb((Zn1/3Nb2/3)0.5(Zr0.47Ti0.53)0.5)O3 Ceramics

The effects of lead content on the structure and electrical properties of Pb((Zn_1/3Nb_2/3)_0.5(Zr_0.47Ti_0.53)_0.5)O₃ ceramics were investigated. Specimens with various lead concentrations were prepared by the conventional oxide-mixing method. When the lead concentration was slightly less than the stoichiometric amount, a large amount of pyrochlore phase was formed along with the perovskite phase. On the other hand, excessive amounts of lead led to the formation of PbO on the surface of the specimen. These second phases were seriously detrimental to electromechanical properties. The highest piezoelectric properties were observed when an excess of 1 mol% lead was added. By optimizing the specimen composition, excellent piezoelectric and dielectric properties ( k _p= 0.7, d ₃₃= 490 pC/N, and ɛ_m= 15000) were obtained.     

Microwave Dielectrics in the (La1/2Na1/2)TiO3–Ca(Fe1/2Nb1/2)O3 System

Dielectric properties of the system (1 − x)(La_1/2Na_1/2)TiO₃– _x Ca(Fe_1/2Nb_1/2)O₃, where 0.4 # x # 0.6, have been investigated at microwave frequencies. The temperature coefficient of resonant frequency (τ_f), nearly 0 ppm/°C, was realized at x = 0.58. These ceramics had perovskite structure and showed relatively low dielectric losses. A new dielectric material applicable to microwave devices having Q · f of 12000–14000 GHz and a dielectric constant (ε_r) of 59–60 has been obtained at 1300–1350°C for 5–15 h sintering.     

Double Precursor Solution Coating Approach for Low-Temperature Sintering of [Pb(Mg1/3Nb2/3)O3]0.63[PbTiO3]0.37 Solids

Lead-based piezoelectric ceramics typically require sintering temperatures higher than 1000°C at which significant lead loss can occur. Here, we report a double precursor solution coating (PSC) method for fabricating low-temperature sinterable polycrystalline [Pb(Mg_1/3Nb_2/3)O₃]_0.63-[PbTiO₃]_0.37 (PMN–PT) ceramics. In this method, submicrometer crystalline PMN powder was first obtained by dispersing Mg(OH)₂-coated Nb₂O₅ particles in a lead acetate/ethylene glycol solution (first PSC), followed by calcination at 800°C. The crystalline PMN powder was subsequently suspended in a PT precursor solution containing lead acetate and titanium isopropoxide in ethylene glycol to form the PMN–PT precursor powder (second PSC) that could be sintered at a temperature as low as 900°C. The resultant d ₃₃ for samples sintered at 900°, 1000°, and 1100°C for 2 h were 600, 620, and 700 pm/V, respectively, comparable with the known value. We attributed the low sintering temperature to the reactive sintering nature of the present PMN–PT precursor powder. The reaction between the nanosize PT and the submicrometer-size PMN occurred roughly in the same temperature range as the densification, 850°–900°C, thereby significantly accelerating the sintering process. The present PSC technique is very general and should be readily applicable to other multicomponent systems.     

Perovskite Phase Formation in the Relaxor System [Pb(Fe1/2Nb1/2)O3]1-x–[Pb(Zn1/3Nb2/3)O3]x

Phase formation and dielectric properties of the compositions in the system [Pb(Fe_1/2Nb_1/2)O₃]₁_ _x –[Pb(Zn_1/3Nb_2/3)O₃] _x were investigated as possible materials for multilayer ceramic capacitors. The formation of the phase with perovskite structure and dielectric properties of ceramics at room temperature in the entire composition range are presented. The undesirable pyrochlore phase can be suppressed up to x = 0.6 by adopting calcination of B-site oxides, followed by reaction with PbO. Compositions in the single-phase range can be sintered at less than 1000°C.     

High-Pressure Synthesis of Perovskites Pb(Li1/4Nb3/4)O3 and Pb(Li1/4Ta3/4)O3

Complex perovskite-type compounds with the general formula Pb(B⁺_1/4B⁵⁺_3/4)O₃, where B⁺= Li⁺ and B⁵⁺= Nb⁵⁺ or Ta⁵⁺, were synthesized using a high-pressure technique and studied by X-ray powder diffraction. The X-ray patterns were indexed on the basis of a cubic cell with a ₀= 4.071 Å for Pb(Li_1/4 Nb_3/4)O₃ and a ₀= 4.052 Å for Pb(Li_1/4Ta_3/4)O₃. Electrical properties of the new perovskites were also studied.     

Effects of La on Dielectric and Piezoelectric Properties of Pb1−xLa2x/3(Nb0.95Ti0.0625)2 O6 Ceramics

Ceramics with the chemical compositions of Pb_{1− x} La_{2 x /3}(Nb_0.95Ti_0.0625)₂O₆ (0≤ x ≤0.060) (PLTN) were prepared by the conventional solid-state reaction method. X-ray diffraction analysis indicated that Ti and La doping not only decreased the rhombohedral–tetragonal phase transformation temperature, but also stabilized the orthorhombic phase of PLTN ceramics. All ceramics sintered at 1190°–1250°C had shown the pure orthorhombic ferroelectric phase. La doping suppresses grain growth and inhibits the formation of pores and cracks, resulting in an increase in relative density up to 97%. The amount of La doping to PLTN ceramics obviously affect ceramics' piezoelectric constant ( d ₃₃) and dielectric loss (tanδ). The sample with x =0.015 possesses high Curie temperature ( T _c=560°C), low dielectric loss (tanδ=0.0054), and excellent piezoelectric constant ( d ₃₃=92 pC/N), presenting a high potential to be used in high-temperature applications as piezoelectric transducers.