悬移质挟沙能力水槽实验方法探讨

水流挟沙能力是研究悬移质泥沙输移的核心问题之一.对不均匀泥沙,由于细颗粒调整的滞后性,传统循环水槽实验较难获取悬移质与河床泥沙相对应的输沙平衡条件,需要大量精度不高的浓度测量和无法避免细沙在系统中循环影响实验精度.本文通过改进水槽进口加沙和增加出口过滤系统,并采用不平衡淤积方式逼近平衡输沙进行实验和研究挟沙.实验得到从...     

Effective Mass Approach for n-MOSFETs on Arbitrarily Oriented Wafers

The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes which arise due to quantum confinement along the body thickness direction. Couplings among the subbands are generated for two reasons: due to spatial variations of the confinement potential along the transport direction, and due to non-alignment of the device coordinate system with the principal axes of the constant energy conduction band ellipsoids. The problem simplifies considerably if the electrostatic potential is separable along transport and confinement directions, and further if the potential variations along the transport direction are slow enough to prevent dipolar coupling (Zener tunneling) between subbands. In this limit, the transport problem can be solved by employing two unitary operators to transform an arbitrarily oriented constant energy ellipsoid into a regular ellipsoid with principal axes along the transport, width and confinement directions of the device.     

Modeling of Transport Through Submicron Semiconductor Structures: A Direct Solution to the Coupled Poisson-Boltzmann Equations

We report on a computational approach based on the self-consistent solution of the steady-state Boltzmann transport equation coupled with the Poisson equation for the study of inhomogeneous transport in deep submicron semiconductor structures. The nonlinear, coupled Poisson-Boltzmann system is solved numerically using finite difference and relaxation methods. We demonstrate our method by calculating the high-temperature transport characteristics of an inhomogeneously doped submicron GaAs structure where the large and inhomogeneous built-in fields produce an interesting fine structure in the high-energy tail of the electron velocity distribution, which in general is very far from a drifted-Maxwellian picture.     

Self-consistent ion transport simulation in carbon nanotube channels

We propose a method to self-consistently deal with polarisation effects in Monte Carlo particle simulations of charge transport. The systems of interest were membrane structures with a narrow (4–8 Å) carbon nanotube (CNT) channel in an aqueous environment. Due to computational limitations for Molecular Dynamics (MD) simulations, we extended the Transport Monte Carlo known from semiconductor simulations to ionic transport in water as a background medium. This method has been used successfully to compute transport rates of ions in biological channels but polarization effects on protein walls cannot be easily included self-consistently, due to the complexity of the structure. Since CNTs have a regular structure, it is practical to employ a self-consistent scheme that accounts for the charge redistribution on the channel wall when an external bias is applied or when the electrical field of a passing ion is screened out. Previous work has shown that this is necessary and the computationally efficient tight-binding (TB) approach developed there [1] is combined with transport Monte Carlo simulations in this work.     

Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

As the semiconductor industry pushes towards ever decreasing device sizes, the need for an efficient yet accurate simulation method increases. We present a different approach to modeling ultra small semiconductor devices through the use of recursive scattering matrices. This approach is a completely quantum mechanical approach in three dimensions, yet does not suffer from excessive computation time or resources. While the transport in most small semiconductor devices is typically 2D in nature, with a 3D model we are capable of incorporating the interaction of the 3D modes in the contacts with the 2D modes in the active regions. We demonstrate this approach by presenting results for a short channel fully-depleted SOI (Silicon On Insulator) MOSFET. We present results using both hardwall potentials and self-consistent potentials as calculated through the use of an iterative Poisson solver.     

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. The approach relies on the calculation of the number of propagating modes and the mean free path for each mode. The modes are calculated from the energy dispersion (E(k)) of the materials, which require heavy computation and are often restricted to energy relations on sparse momentum (k) grids. Here an efficient method to calculate the distribution of modes (DOM) from a given E(k) relationship is presented. The two main features of this algorithm are: (i) its ability to work on sparse dispersion data, and (ii) creation of an energy grid for the DOM that is almost independent of the dispersion data therefore allowing for efficient and fast calculation of TE parameters. The effect of K-grid sparsity on the compute time for DOM and on the sensitivity of the calculated TE results are provided. The algorithm calculates the TE parameters within 5% accuracy when the K-grid sparsity is increased up to 60% for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation is strongly influenced by the transverse K density (K perpendicular to transport direction) but is almost independent of the transport K density (along the transport direction). The DOM and TE results from the algorithm are bench-marked with, (i) analytical calculations for parabolic bands, and (ii) realistic electronic and phonon results for Bi₂Te₃.     

A many-particle quantum-trajectory approach for modeling electron transport and its correlations in nanoscale devices

Electron transport in mesoscopic systems is analyzed in terms of quantum (Bohm) trajectories associated to wave-function solutions of a many-particle (effective-mass) Schrödinger equation. Many-particle Bohm trajectories can be computed from single-particle Schrödinger equations. As an example, electron correlations for a triple-barrier tunneling system with electron-electron interactions are computed. Simulated noise results for interacting electrons that tunnels through triple barriers are presented. The approach opens a new path for studying electron transport and quantum noise in nanoscale systems, beyond the “Fermi liquid” paradigm.     

Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method

Source-to-drain tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator Minimos-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. By separating the potential profile into a smooth classical component and a rapidly varying quantum component the numerical stability of the Monte Carlo method is improved. The results clearly show an increasing tunneling component of the drain current with decreasing gate length. For longer gate lengths the semi-classical result is approached.     

Semi-discrete 2D Wigner-particle approach

We suggest particle-based approach for simulation of carrier transport in 2D devices. The quantum character of the carrier transport is taken into account by generation and recombination of positive and negative particles. Preliminary applications of the approach are discussed. Also, a variety of issues are raised regarding many computational challenges that need to be overcome.     

基于图像识别的推移质输沙率检测技术研究

鉴于传统推移质输沙率测量方法难以进行实时动态检测,本文将图像识别理论与推移质输移特点结合,提出了基于图像识别的推移质输沙率检测技术,给出了相应的推移质颗粒组成确定方法与推移质输沙率计算方法。水槽试验表明,基于图像识别的推移质输沙率的确定方法具有较好的可靠度。实时动态检测表明小粒径泥沙输移具有较好的连续性,而大粒径泥沙输移则具有明显的阵发性特点。这种非接触式的检测方法可以实现对非均匀推移质输移过程的动态监测,实时获取推移质颗粒组成以及分粒径组和分条带输沙率,在推求确定输沙率时还可以降低拟合曲线的病态特征程度,丰富了推移质测量的内容,有利于对非均匀推移质输移规律的深入研究。     

Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime

In this paper, we present a novel compact model for channel noise in FETs where the effects of far-from-equilibrium transport are considered in a fundamental way. The intermediate range between the drift-diffusion and the ballistic transport regimes is covered through an analytical treatment based on Büttiker virtual probes approach to inelastic scattering. The channel noise is interpreted as due to the contribution of thermal noise at the source end and of shot noise associated with local ballistic transport at the drain end. The model can be improved through the inclusion of Fermi and Coulomb correlations, that provide a significant suppression of shot noise.     

An effective potential approach to modeling 25 nm MOSFET devices

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.     

An Effective Potential Approach to Modeling 25 nm MOSFET Devices

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.     

基于OFDM的高速电力线远程通信系统的设计与分析*

针对国内外现有的电力载波通信存在通信速率低,以及通信频率和通信功率不达标等缺陷,推进传输技术的研究,设计了一种基于正交频分复用技术(OFDM)的高速电力线远程通信系统。详细介绍了基于傅里叶(FFT)的OFDM和基于小波变换的OFDM传输方式,同时对比了两者数据传输的速率和效率,利用Lab VIEW编程,实现上位机的实时可视化监测。对电力载波通信传输(PLC)的检测方法和手段进行初步探索,测试结果表明整个系统在数据传输、抗干扰性、安全性等方面具有优良的性能,能够实现高速稳定的PLC通讯。     

Unified simulation of transport and luminescence in optoelectronic nanostructures

Computer simulation of microscopic transport and light emission in semiconductor nanostructures is often restricted to an isolated system of a single quantum well, wire or dot. In this work we report on the development of a simulator for devices with various kinds of nanostructures which exhibit quantization in different dimensionalities. Our approach is based upon the partition of the carrier densities within each quantization region into bound and unbound populations. A bound carrier is treated fully coherent in the directions of confinement, whereas it is assumed to be totally incoherent with a motion driven by classical drift and diffusion in the remaining directions. Coupling of the populations takes place through electrostatics and carrier capture. We illustrate the applicability of our approach with a well-wire structure.     

Effect of temperature, electric and magnetic field on spin relaxation in bilayer graphene

In spintronics, spin degree of freedom of an electron is used to store and process information and thus can provide numerous advantages over conventional electronics by providing new functionalities. In this paper, we employ the semiclassical Monte Carlo approach to study the spin polarized transport in bilayer graphene. Due to lower spin orbit interaction (SOI) and higher spin relaxation lengths, graphene is considered as suitable material for spintronics application. Spin relaxation in bilayer graphene is caused by D’yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. The effect of temperature, magnetic field and driving electric field on spin relaxation length is studied. We have considered injection polarization along z-direction which is perpendicular to the plane of graphene and the magnitude of ensemble averaged spin variation is studied along the x-direction which is the transport direction.     

Monte Carlo simulation of double gate MOSFET including multi sub-band description

A new two-dimensional self-consistent Monte-Carlo simulator including the multi sub-band transport in a 2D electron gas is described and applied to an ultra-thin Double Gate MOSFET. This approach takes into account both out of equilibrium transport and quantization effects. This method improves significantly microscopic insight into the operation of deep sub-100 nm CMOS devices. We analyze the ballistic, quantization and roughness effects in a 12 nm-long DGMOS transistor. In particular, we focus on the link between non-stationary transport and the evolution of sub-band occupancy along the channel.     

The influence of the zigzag and armchair leads on quantum transport through the graphene based quantum rings

The conductivity of a graphene ring with two semi-infinite, armchair and zigzag leads has been investigated. We have performed numerical calculations based on the nearest neighbor tight-binding Hamiltonian and Dirac point approximation. A Non-Equilibrium Green’s Function (NEGF) approach has been employed to calculate the electric current under an applied bias voltage, in this two terminal mesoscopic system. We have studied the effect of the external magnetic field on transport characteristics of this graphene-based quantum ring. Coherent transport features of the system have been studied. It was shown that there is significant distinction between the I–V characteristics (and also the Aharonov-Bohm effect) of the graphene rings depending on the edge structure of the leads.