新型真空器件在武器装备中的应用

介绍真空电子器件和固态器件组合的新型电子器件——微波功率模块(MPM),以及将微电子工艺应用于传统真空电子器件而出现的真空微电子器件,这两种器件将对下一代武器系统有重要的影响。     

真空微电子器件发射稳定性和可靠性概述

解决真空微电子器件的稳定性和寿命问题，可以扩大场臻发射器的应用范围。本文概述了影响真空微电子场致发射阴极阵列发射稳定性的几个因素，认为阴极材料和功函数是决定真空微电子器件发射稳定性的主要因素。最后提出了解决发射稳定的几个建议。     

真空微电子毫米波器件

介绍了真空微电子分布放大器和真空微电子微波管两类器件，对其优点和问题进行了探讨，并就我国发展真空微电子毫米波器件提出了看法．     

真空微电子器件发展现状及远景了望

本文论述了真空微电子器件的发展远景,并回答了为什么真空微电子器件在未来必将取代固体器件,以及目前它在工艺上和理论上存在些什么困难。     

真空微电子技术的研究与发展

本文首先简论真空微电子技术的发展概况、其赖以发展的技术基础、特点、应用前景;嗣后,重点评述场致发射理论及发射极(阴极)制造技术的研究现状;真空微电子器件的制造技术现状;真空微电子技术的应用;最后给出了结论。     

真空微电子学的研究与发展

本文系统介绍了近年来真空微电子不的研究内容，达到的水平和亟待解决的问题，包括真空微电子器件的基本结构，场发射列，微尖结构物理，新材料和新器的探索以及真空微电子学的主要应用。     

真空微电子器件的进展与问题

本文简要地叙述了真空微电子学的主要进展,在介绍场发射阵列FEA、场发射显示器FED、真空微电子微波毫米波器件等的发展过程中,重点叙述了有关器件对FEA的特殊要求、可能的解决办法和存在的问题,并介绍了发展真空微电子微波管的主要内容和意义;最后提到了有效地发展我国真空微电子器件需重视的一个问题.     

真空微电子器件发射体材料研究概况

改善真空微电子器件发射体材料的性能，有助于大大提高真空微电子器件的性能。本文概述了近年来真空微电子器件发射体材料研究状况，认为目前对金属薄膜材料，合金材料，金刚石薄膜，碳化物，硅化物等的场发射特性的研究工作，将产生一些性能优异的发射体材料。     

真空微电子器件的进展与问题

本文简要地叙述了真空微电子学的主要进展，在介绍场发射阵列ＦＥＡ，场发射显示器ＦＥＤ，真空微电子微波毫米波器件等的发展过程中，重点叙述了有关器件对ＦＥＡ的特殊要求，可能的解决办法和存在的问题，并介绍了发展真空微电子微波管的主要内容和意义；最后提到了有效地发展我国真空微电子器件需重视的一个问题。     

真空微电子平板摄像

本介绍了真空微电子平板摄像器件的物理模型,它较之真空摄像器件、固体摄像器件相比具有的优点。     

Opportunities for microtechnology in metrology

The vast infrastructure of the microelectronic and microtechnological processing industry has yielded highly reproducible devices through reliable, reproducible, and fabrication-compatible processing techniques. Much development has occurred in bulk and surface micromachining, as well as in thin-film deposition techniques. Nevertheless, only a limited number of metrological applications have benefited from the use of this technology. Only two metrological applications that use microtechnology have been developed into commercially available devices: the JJA, as a DC reference, and the thermal RMS-to-DC converter, as an AC reference. Single electron tunneling devices and micromachined electrostatic RMS-to-DC converters are still under development. The accuracy requirements of the existing applications will continue to increase. This makes the development of on-chip references and on-chip self-test and self-calibration facilities essential. These microelectronic features, until now have remained unexploited in metrology, as well as in most other applications     

Vacuum microelectronic devices [and prolog]

In this review/tutorial paper, we cover the history, physics, and current status of vacuum microelectronic devices. First we overview the performance requirements of vacuum microelectronic devices necessary for them to replace, or fill voids left by, solid state devices. Next we discuss the physical characteristics of micro-field-emission sources important to device applications. These characteristics include fundamental features, such as current-voltage data and noise, in addition to engineering considerations, such as life expectancy and procedures for tube assembly. We conclude with a review of a wide variety of demonstrated and proposed devices based on vacuum microelectronic principles, including electron guns, microwave tubes, and flat-panel displays     

Displaying a bright future [vacuum microelectronics]

Recent technical and market advances have created a resurgence of interest in miniature vacuum devices based on field-emission vacuum microelectronics. For several operational conditions, these new devices have inherent advantages over their solid-state counterparts. Vacuum microelectronic devices are less sensitive to temperature variations, provide high-speed switching capabilities, and are less susceptible to radiation damage. In addition, electron beams can be steered with external electric and magnetic fields, and electron devices are capable of operation with high current densities. In this article, we describe the development of this new generation of vacuum microelectronic devices and showcase some exciting applications arising from this technology, ranging from flat-panel displays to electron beam devices     

PZT铁电薄膜刻蚀的研究进展

PZT铁电薄膜器件在微电子领域有着广泛的应用，可用于制备微机械系统(MEMS)、DRAM、红外探测器等，而薄膜的微图形化刻蚀技术是制备工艺中重要的环节。该文主要介绍了PZT铁电薄膜刻蚀技术的研究进展和应用，并对各种刻蚀法进行分析和对比。     

战术通信领域微电子技术的发展及影响

微电子技术是推动战术通信发展的关键动力。介绍了战术通信中常用的数字集成电路、模拟集成电路等微电子器件的最新发展,论述了微电子器件对战术通信发展的重要影响,提出了推进国产军用微电子器件研制应用的建议。     

精密掺杂技术的发展与应用

微电子学和光电子学的迅速发展,要求能对掺入半导体晶片中的杂质数量、深度和浓度分布进行精密控制,因此原子平面掺杂和超浅层掺杂技术已成为发展新器件的重要工艺之一。本文介绍了当前三种主要的浅层或薄层平面掺杂技术的特点,并简要论述了它们在光电子器件和集成电路中的应用。     

激发物激光烧蚀法制备铁电和压电薄膜

本文叙述用激发物激光烧蚀法沉积几种铁电和压电薄膜的制备法和性能，并介绍了这些薄膜在微电子学器件和微波声学器件方面的应用。     

微电子器件的抗辐射加固技术

对各类微电子材料的抗辐射特性进行了分析 ,对 Si双极器件和 Si CMOS器件、 Ga As微波功率器件、新兴光电器件—— VCSEL、 LED以及 MEMS的抗辐射加固技术进行了探讨 ,对几种空间单粒子效应 (SEE)进行了研究     

Reliability considerations of III-nitride microelectronic devices

The success of III-nitride optoelectronic devices paths the way towards emerging devices in microelectronics. These devices are currently at the threshold to commercialization, therefore reliability considerations are becoming increasingly important. This paper reviews the material and process technology of III-nitride microelectronic devices in the scope of reliability. Since statistical reliability data are lacking in the current state of research the review starts with a summary of how reliability can be designed into process modules being relevant for microelectronic devices. This includes a discussion of the most important issues of material growth, metallization, implantation, dry etching and surface passivation. The subsequent chapter focuses to microelectronic devices and highlights technological challenges that have to be met in order to obtain reliable devices. Finally, results of lifetime experiments (thermal aging) demonstrate that III-nitride devices have the potential for reliable operation even at elevated temperatures up to 400°C.     

国外微电子器件制造中的成品率管理方法综述

综述了国外微电子器件成品率提高的三个阶段和成品率损失的原因分析 ,介绍了国外成品率预测模型的研究及利用测试结构对影响成品率的缺陷进行监测和查找的情况 ,进而讨论了微电子器件制造中的成品率管理方法。