First principles study of the Be-C co-doped MgB_2 system

We study the Be-C doped MgB_2 system by the first principles method based on density functional theory. The compensation effect between electron type doping and hole type doping is shown in the total density of states on the Fermi level, the real part of optical conductivity, and the number of effective carriers. The compensation mechanisms are discussed. The critical temperatures for different systems are calculated.     

Be-C共掺MgB2系统的第一性原理研究

用第一性原理方法研究了Be-C共掺MgB2 系统。讨论了电子型掺杂和空穴性掺杂共存对系统的态密度,光电导的实部,有效载流子数的影响。相应的讨论了补偿效应。并计算了超导转变温度     

用第一性原理研究n型Sn/F共掺杂β-Ga2O3

用第一性原理计算了Sn掺杂 β-Ga2O3、F掺杂β-Ga2O3和Sn/F共掺杂 β-Ga2O3的形成能、电子结构和光学性能。用LDA方法计算的本征β-Ga2O3和Sn掺杂 β-Ga2O3的晶格常数和电子结构与实验值吻合。形成能计算表明Sn掺杂 β-Ga2O3、F掺杂β-Ga2O3和Sn/F共掺杂 β-Ga2O3在富氧条件下比在富镓条件下容易形成。Sn掺杂 β-Ga2O3、F掺杂β-Ga2O3和Sn/F共掺杂 β-Ga2O3显示n型半导体特性。Sn/F共掺杂 β-Ga2O3具有最小的电子有效质量和最大的相对电子数,具有潜在的良好导电性。Sn/F共掺杂 β-Ga2O3在可见光区域显示强的光吸收。     

Hg Substitution Effect on Superconductivity and Crystal Structure of MgB_2

Polycrystalline Mg1-xHgxB2 samples with x=0, 1%, 2.5%, 5%, 7.5%, and 10% have been synthesized by solid-state reaction. Different from the substitution effect of Al, C, Li, etc. on crystal structure of MgB2, Hg substitution for Mg results in an increase of the lattice constant in both a and c directions. The super- conductivity of MgB2 is also suppressed by Hg substitution. The observed suppression of super- conductivity by Hg substitution is discussed in terms of the interband impurity scattering effect in two-band superconductors.     

Se和Cd掺杂GaN电子结构与光学性质的第一性原理研究

基于密度泛函理论的第一性原理,使用GGA+U方法分别计算Se和Cd单掺与共掺杂GaN体系的晶格常数、电子结构及光学性质.结果表明:与本征GaN相比,掺杂后体系的晶格常数发生了改变,禁带宽度减小,吸收光谱均发生红移,表明掺杂使体系的光谱响应范围得到更大拓展.其中,Cd单掺GaN体系的禁带宽度最小,并在费米能级附近有杂质能...     

Electronic and optical properties of the doped TiO2 system

By the total energy pseudo-potential approach of plane wave, we study the electronic and optical properties of the anatase TiO2 systems with Sc-doped, oxygen vacancies included, and Sc and oxygen vacancies co-existing, respectively. The obtained results show that the contribution by the doped Sc lies mainly in the valence band, and the light absorption in the visible region is obvious. A Mott phase transformation takes place in the presence of oxygen vacancies, and the light absorption in the visible region is also obvious. In particular, the absorption in the visible region of the co-doped system is enhanced coherently due to the influences both from doped Sc and oxygen vacancies.     

First principles study of structural,electronic and optical properties of AgSbS2

In this work, we study the structural, electronic and optical properties of AgSbS₂, using full-potential linearized augmented plane wave and the pseudopotential plane wave scheme in the frame of generalized gradient approximation. Features such as the lattice constant, bulk modulus and its pressure derivative are reported. Our results suggest a phase transition from AF-IIb phase to rocksalt (B1) phase under high pressure. The calculated band structure and density of states show that the material under load has an indirect energy band gap X→(LГ) for AF-IIb phase (semiconductor) and a negative band gap W→(ГX) for B1 phase (semimetal). The optical properties are analyzed and the origin of some peaks in the spectra is discussed. Besides, the dielectric function, refractive index and extinction coefficient for radiation up to 14 eV have also been reported and discussed.     

二氧化钛掺杂系统的电子结构和光学性质的研究

采用总能量平面波赝势方法研究了Sc掺杂、含氧空位、氧空位与Sc掺杂共存时的锐钛矿TiO2系统的电子结构和光学性质。结果表明,Sc掺杂对系统的主要贡献在价带区,在可见光区有明显的光吸收;氧空位可以使系统发生莫特相变,系统在可见光区也有较强的吸收;氧空位与Sc掺杂共存时系统在可见光区的吸收相干加强。     

N 和 Fe 共掺杂对TiO2电子结构和光学性质影响的第一性原理研究

本文采用基于密度泛函理论的第一性原理研究了N 和 Fe共掺杂锐钛矿相TiO2的电子结构和光学特性。计算结果表明,不同位置N 和 Fe共掺杂影响共掺TiO2的稳定性。通过态密度讨论了掺杂TiO2带隙变窄的机理。 不同位置N 和 Fe共掺杂影响了可见光吸收。N 和 Fe共掺杂的协同效应导致了可见光吸收的增强。因此,N 和 Fe共掺杂也许增强TiO2在可见光区的光催化能力。     

First principle study of the electronic structure of hafnium-doped anatase TiO2

正Crystal structures and electronic structures of hafnium doping anatase TiO_2 were calculated by first principles with the plane-wave ultrasoft pseudopotential method based on the density functional theory within the generalized gradient approximation.The calculated results show that the lattice parameters a and c of Hf-doped anatase TiO_2 are larger than those of intrinsic TiO_2 under the same calculated condition.The calculated band structure and density of states show that the conduction band width of Hf-doped TiO_2 is broadened which results in the band gap of Hf-doped being smaller than the band gap of TiO_2.     

锐钛矿相TiO2电子结构和光学性质的第一性原理计算

采用第一性原理平面波超软赝势方法计算了锐钛矿相TiO2的电子结构和光学性质,并从理论上分析了它们之间的关系.利用精确计算的能带结构和态密度分析了电子带间跃迁占主导地位的锐钛矿相TiO2的介电函数、复折射率、反射率和吸收系数,理论计算得到的结果与实验测量结果基本一致.结果表明锐钛矿相TiO2在E//c和E上c两个极化方向上具有明显的光学各向异性,为锐钛矿相TiO2的应用提供了理论依据.     

锐钛矿相TiO2电子结构和光学性质的第一性原理计算

采用第一性原理平面波超软赝势方法计算了锐钛矿相TiO2的电子结构和光学性质,并从理论上分析了它们之间的关系.利用精确计算的能带结构和态密度分析了电子带间跃迁占主导地位的锐钛矿相TiO2的介电函数、复折射率、反射率和吸收系数,理论计算得到的结果与实验测量结果基本一致.结果表明锐钛矿相TiO2在E//c和E上c两个极化方向上具有明显的光学各向异性,为锐钛矿相TiO2的应用提供了理论依据.     

GaN1?xBix合金的电子与光学性质的第一性原理计算

The electronic and optical properties of the ternary Ga N1 xBix alloys in the zinc-blende structure are theoretically investigated by first principles calculations. Geometric optimization is performed before all the simulations to get accurate results. The band gaps of the alloys are found to be direct even with xD6.25%, and would become smaller when increasing the Bi compositions. The decrease ratio of band gaps is approximately 227 me V when 1% of N is replaced by Bi in the range of xD0–6.25%. Meanwhile, the absorption coefficient is shown to be significantly changed induced by the incorporation of Bi. These interesting properties indicate that Ga N1 xBix alloys could be a promising candidate in future optoelectronic applications.     

Improvement in Superconducting Properties of MgB_2 Superconductors by Nanoscale Carbon-Based Compound Doping

MgB2 is a relatively new superconductor; it has attracted great interest from superconductor researchers all over the world. Thorough investigations have been carried out to study the material fabrication, as well as to study the material and superconducting properties from a fundamental physics point of view. The University of Wollongong has played a very active role in this research and a leading role in the research on high critical current density and high critical magnetic fields. Our recent research on the improvement of critical current density and the upper critical magnetic field by carbon-based compound doping is reviewed in this paper.     

First principles study of structural,electronic, elastic and magnetic properties of gadolinium hydride system GdHx (x=1, 2, 3)

The structural, electronic, elastic and magnetic properties of gadolinium and its hydrides GdH_x (x=1, 2, 3) are investigated by using Vienna ab-initio simulation package with the generalized gradient approximation parameterized by Perdew, Burke and Ernzerhof (GGA-PBE) plus a Hubbard parameter (GGA-PBE+U) in order to include the strong Coulomb correlation between localized Gd 4f electrons. At ambient pressure all the hydrides are stable in the ferromagnetic state. The calculated lattice parameters are in good agreement with the experimental results. The bulk modulus is found to decrease with the increase in the hydrogen content for the gadolinium hydrides. A pressure-induced structural phase transition is predicted to occur from cubic to hexagonal phase in GdH and GdH₂ and from hexagonal to cubic phase in GdH₃. The electronic structure reveals that mono and di-hydrides are metallic, whereas trihydride is half-metallic at normal pressure. On further increasing the pressure, a half-metallic to metallic transition is also observed in GdH₃. The calculated magnetic moment values of GdH_x (x=1, 2, 3) are in accord with the experimental values.     

Hf掺杂锐钛矿TiO2电子结构的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法对Hf掺杂锐钛矿型TiO2的电子结构进行了第一性原理研究。对通过对能带和电子态密度的分析,发现在Hf掺杂后,导带底和价带顶同时降低,但是由于价带顶下降的比导带底多,从而使得锐钛矿型TiO2的禁带宽度变窄。     

ZnS:Er电子结构和光学性质的第一性原理计算

采用第一性原理平面波赝势方法,分析了ZnS及掺杂Er3+之后的电子结构,进而预测了其光学性质。结果表明,掺杂之后体系的带隙变窄,同时价带与导带之间形成一个新的中间带。随着掺杂Er3+浓度的增加,体系的绝缘性呈下降趋势,吸收光谱则发生红移现象。这一结论与前人报道的实验结果相符。     

Mo掺杂SnO2光电特性的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理,研究了不同掺杂浓度下钼(Mo)掺杂SnO₂的能带结构、电导率、吸收和反射率。建立了MoxSn1-xO₂的三种掺杂模型(x=0.0625,0.125,0.1875),掺杂体系具有高电导率、高载流子密度和宽带隙的n型金属特征。随着掺杂浓度的增加,掺杂体系的带隙增加,电导率降低。Mo掺杂后,可见光区域的高透射性得以保留。特别地,在x=0.0625时实现了Mo掺杂SnO₂的最佳电导率和光学性能。     

First principles study of electronic and optical properties of the ternary SnSb4S7 using modified Becke-Johnson potential

The electronic and optical properties of SnSb₄S₇ compound are calculated by the full-potential linearized augmented plane-wave (FP-LAPW) method. The density of states (DOS) is carried out by the modified Becke-Johnson (mBJ) exchange potential approximation based on density functional theory (DFT). The compound SnSb₄S₇ has a monoclinic structure with the space group P2₁/m with lattice parameters of a=11.331 Å, b=3.865 Å and c=13.940 Å. The band gap is calculated to be 0.8 eV. The optical parameters, like dielectric constant, refractive index, reflectivity and energy loss function were also calculated and analyzed. The present work provides information about variation of the electronic and optical properties which reveals that SnSb₄S₇ is suitable for optoelectronic devices.     

LiH电子结构与光学性质的密度泛函计算

采用基于密度泛函理论的平面波超软赝势方法计算了LiH晶体的电子结构和光学性质,给出了电子态密度、介电函数、吸收系数、复数折射率等计算结果,并对计算结果进行了分析.介电函数的虚部、吸收光谱、折射率等的峰值位置存在一一对应关系,这表明它们之间存在着内在的联系,与电子从价带到导带的跃迁吸收有关.

Abstract：

Electronic structure and optical properties of LiH crystal were investigated by using plane-wave ultra-soft pseudopotential method based on density functional theory. Electronic state density, dielectric function, absorption coefficient, and the complex reflectivity index of LiH crystal were calculated and analyzed. The peaks of the imaginary part of dielectric function, absorption spectra and complex reflectivity index of LiH crystal are corresponding with each other. Such results are related to the transition absorption of electrons from valence band to conduction band.