Study of intermodulation in RF MEMS variable capacitors

This paper provides a rigorous study of the causes and physical origins of intermodulation distortion (IMD) in RF microelectromechanical systems (MEMS) capacitors, its analytical dependence on the MEMS device design parameters, and its effects in RF systems. It is shown that not only third-order products exist, but also fifth order and higher. The high-order terms are mainly originated by the nonlinear membrane displacement versus applied voltage and, in the case considered in this study, with an additional contribution from the nonlinear dependence of the reflection coefficient phase on the displacement. It is also shown that the displacement nonlinear behavior also contributes to the total mean position of the membrane. In order to study these effects in depth, an analytical frequency-dependent IMD model for RF MEMS based on a mobile membrane is proposed and particularized to the case of a MEMS varactor-a device for which IMD can be significant. The model is validated, up to the fifth order, theoretically (using harmonic balance) and empirically (the IMD of a MEMS varactor is measured). To this end, a two-tone IMD reflection measurement system for MEMS is proposed.     

Utility of RF MEMS miniature switched capacitors in phase shifting applications

This paper demonstrates research carried out towards the development of switched capacitors having miniature dimensions. Such devices are based on the Radio Frequency Micro Electro Mechanical Systems (RF MEMS) technique which has gained prominence in implementing a wide variety of microwave and millimetre devices till date. Switched capacitors having standard or conventional dimensions are prone to several limitations which are addressed by scaling down the standard dimensions by 150× times (in terms of area requirement). Such switched capacitors are employed to develop phase shifters working in K-band (22 GHz) frequency range to yield appreciable performance both in terms of electromechanical and RF characterizations. Such switched capacitors are utilized to develop phase shifters which find immense applications in the design of Phased Array RADARs. Switched capacitors fabricated on 500 µm thick quartz substrates, result in 30° phase shift (0.66 mm × 1 mm in dimension) with associated minimum −0.18 dB insertion loss and better than −21 dB reflection coefficient at 22 GHz frequency. Electromechanical characterization reports an actuation voltage of 14.6 V, mechanical vibration frequency of 2.5 MHz and a switching time of 620 ns respectively. Demonstrations showing complete realization of 180° phase shifter (4 mm × 1 mm) employing a cascaded arrangement of six similar 30° unit cells are also included in this paper.     

射频微电子机械系统的发展与展望

介绍了射频微电子机械系统 ( RF MEMS)的最新进展、研究内容及应用前景。该系统装置包括开关、继电器、电容器、电感器、滤波器及微波和毫米波元件。     

Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计

为降低Ka波段分布式MEMS移相器容性开关的驱动电压,提出不同形状新型低弹性系数铰链梁结构MEMS电容开关的机电设计概念.采用Intelli SuiteTM和ADS软件分析了三种梁结构MEMS电容开关的位移分布、驱动电压、机械振动模式和射频性能等参数,结果表明:所设计新型beam2结构MEMS电容开关具有优越的机电特性和射频特性,即开关的驱动电压为3V,机械振动模式固有频率都大于31kHz,在35GHz处插入损耗和回波损耗分别为0.082dB和18.6dB,而相移量可达到105.9o.     

RF MEMS switch integrated on printed circuit board with metallic membrane first sequence and transferring

This letter reports, for the first time, on RF MEMS switches integrated on flexible printed circuit boards (i.e., FR-4) using transfer technology. The devices were first processed on Si-substrate using a modified MEMS sequence and subsequently transferred onto an FR-4 substrate by thermal compressive bonding, mechanical grinding, and wet removal of silicon. The switches were demonstrated with flat metal membrane (top electrode), precisely controlled gap between the membrane and bottom electrode, low insertion loss (/spl les/ 0.15 dB at 20 GHz), and high isolation (/spl sim/ 21 dB at 20 GHz). This technology shows the potential to monolithically integrate RF MEMS components with other RF devices on organic substrate for RF system implementation.     

RF MEMS技术对小型化雷达的作用

该文采用至上而下的方式,介绍了应用RF MEMS技术的雷达系统,将雷达子系统与RF MEMS技术联系起来,具体分析了应用于雷达的RF MEMS开关、移相器、滤波器和谐振器。同时,文中以开关和移相器为例,讨论了如何提高RFMEMS雷达的性能:修改空气桥形状可以提高RF MEMS收发(T/R)组件的功率处理能力,从而减少雷达相控阵的T/R组件数量;缩短转换时间的RF MEMS移相器能够应用于高速电扫描阵列;蜿蜒型5位分布式MEMS传输线移相器面积仅为5.36mm×4.72mm,相比传统移相器长度降低70%,易于实现雷达阵列的小型化。     

RFMEMS开关及其抗连续波烧毁功率的测试与分析

MEMS开关的功率能力是MEMS开关使用中必须考虑的一个指标,本文测试了我所研制的RFMEMS开关的抗连续波烧毁功率性能,其抗连续波烧毁功率达到35.1dBm。解剖分析了烧毁样品,对功率烧毁机理进行了进一步的讨论。     

A monolithic MEMS switched dual-path power amplifier

RF MEMS switches have been successfully integrated with HEMT MMIC circuits on a GaAs substrate to construct a dual-path power amplifier at X-band. The amplifier uses two MEMS switches at the input to guide the RF signal between two paths. Each path provides single-stage amplification using different size HEMT devices, one with 80-μm width and the other with 640-μm. Depending on the required output power level, one of the two paths is selected to minimize the dc power consumption. Measurements showed the amplifier producing similar small signal gains of 13.2 and 11.5 dB at 10 GHz for the small and the large devices, respectively. The best PAE was 28.1 percent with 8.5 dBm of output power for the small device, and 15.3 percent with 14.6 dBm for the large device     

A methodology for accelerated testing by mechanical actuation of MEMS devices

In order to fully understand the reliability issues around MEMS device a means of carrying out accelerated testing is required. This research investigated the use of mechanical means to actuate MEMS membranes so that lifetime estimates could be obtained. A Talysurf measurement system was adapted to allow a MEMS membrane to be cycled by moving it with a stylus. This cycling was continued until the membrane failed according to the definitions provided by the device manufacturer. This experiment was repeated with different forces and this allowed standard life testing techniques to be used to produce a prediction of lifetime under normal use conditions. The lifetime predicted was of the order of 30 million cycles and was in keeping with the expectations of the device manufacturer for this geometry and materials. This demonstrated that the acceleration technique is a valid way to accelerate the device type and so can provide a method for predicting lifetimes for other devices. Such a prediction will be useful in Understanding the reliability of MEMS devices in actual usage.     

电子元器件封装技术发展趋势

晶圆级封装、多芯片封装、系统封装和三维叠层封装是近几年来迅速发展的新型封装方式,在推动更高性能、更低功耗、更低成本和更小形状因子的产品上,先进封装技术发挥着至关重要的作用。晶圆级芯片尺寸封装(WCSP)应用范围在不断扩展,无源器件、分立器件、RF和存储器的比例不断提高。随着芯片尺寸和引脚数目的增加,板级可靠性成为一大挑战。系统封装(SIP)已经开始集成MEMS器件、逻辑电路和特定应用电路。使用TSV的三维封装技术可以为MEMS器件与其他芯片的叠层提供解决方案。     

Switchable low-loss RF MEMS Ka-band frequency-selective surface

A switchable frequency-selective surface (FSS) was developed at 30 GHz using RF microelectromechanical systems (MEMS) switches on a 500-/spl mu/m-thick glass substrate. The 3-in-diameter FSS is composed of 909 unit cells and 3636 MEMS bridges with a yield of 99.5%. The single-pole FSS shows a transmission loss of 2.0 dB and a -3-dB bandwidth of 3.2 GHz at a resonant frequency of 30.2 GHz with the MEMS bridges in the up-state position. The -1-dB bandwidth is 1.6 GHz. When the MEMS bridges are actuated to the down-state position, an insertion loss of 27.5 dB is measured. Theory and experiment agree quite well. The power handling is limited to approximately 25 W with passive air cooling and >150 W with active air cooling due to the increased temperature of the overall circuit resulting from the transmission loss (for continuous-wave operation with the assumed maximum allowable temperature of 80/spl deg/C), or 370 W-3.5 kW due to self-actuation of the RF MEMS bridges (for pulsed incident power). Experimental results validate that 20 W of continuous-wave power can be transferred by the RF MEMS FSS with no change in the frequency response. This is the first demonstration of a switched low-loss FSS at Ka-band frequencies.     

基于MEMS技术的射频移相器

微波与毫米波移相器是通讯和雷达应用上相控阵天线的基本单元，MEMS技术的引入提供了一个在移相器设计中用最小损耗的开关来大量减少移相器插入损耗的方法，该方法可以降低器件的功耗，改善插入损耗、隔离度、频带宽度等性能。相比于GaAs移相器，基于MEMS开关的射频移相器，无论是开关线型、分布式或是反射型，都有很好的RF性能。     

A MEMS Brownian ratchet

A Brownian ratchet is a device that can rectify the random Brownian motion of particles to yield a directed steady-state flow. We can imagine a thermofluid field of particles, which interact with the ratchet. The laws of thermodynamics imply that the ratchet must use energy from some other source.The dynamics of continuous-time Brownian ratchets are determined by a stochastic partial differential equation. We have used a simplified discrete-time model of a Brownian ratchet called ‘Parrondo's games’, which are governed by a difference equation. In their original form, Parrondo's games are a finite set of simple games of chance. An indefinite pure sequence of any single game is neutral or even losing. A periodic or randomised sequence of mixed games can be winning. There is a steady state flow of probability in the preferred direction.We have been able to design a feasible and consistent device, by mapping the conservation law of total probability onto the law of conservation of charge. This device can absorb energy from a mechanical field to produce a directed flow of charge. The fundamental architecture is based on a ‘bucket-brigade’ device. The capacitors are 2-port MEMS devices. We use CMOS transmission gates to connect the capacitors in the required topology.We present an analysis and simulation of the MEMS Brownian ratchet and suggest some possible applications.     

日本近年RF MEMS开关研究的进展

RFMEMS是射频表面微机械系统简称。射频表面微机械系统现在包括滤波器和微型电器元件,如开关,微可变电容和微可变电感。射频开关按驱动原理分有静电,压电,电磁以及热驱动。由于这一研究的高频化和高精度的特点,目前开关的研究集中在静电驱动的方式的研究上,从上市的产品来看,静电驱动是最有希望的RFMEMS的执行机构。静电执行器驱动的RFMEMS开关成为下一代高频通讯中的关键部件。     

Oscillation detection technique by using Vector Network Analyzer

A Vector Network Analyzer(VNA) can be used to identify oscillation frequency of a signal source with moderate or low Radio Frequency(RF) power if certain care is taken according to experimental results. Unlike reported in the literature that a resonant peak of measured absolute value of reflection coefficient greater than 1 that corresponds to an oscillation frequency, we report that by observing the magnitude change of one-port reflection coefficient across the entire swept frequency range, a sudden peak or a dip corresponds to an oscillation frequency, this is more accurate than other reports. In addition, using modern VNA as a signal detection method can significantly reduce measurement time and increase measurement accuracy to VNA capability for developing emerging signal generating devices at early stage, especially for planar, large quantity and operating in a wide frequency range.     

去耦电容在高速PCB中的应用

高速PCB设计中,合理地使用去耦电容在消除芯片逻辑切换时产生的RF噪声,防止电磁干扰中具有重要作用.本文就去耦电容的容量及其具体应用作了较为详细的叙述,重点介绍了一些在PCB上合理放置去耦电容的实用方法.     

A Monolithic Phased Array Using 3-bit Distributed RF MEMS Phase Shifters

This paper presents a novel electronically scanning phased-array antenna with 128 switches monolithically implemented using RF microelectromechanical systems (MEMS) technology. The structure, which is designed at 15 GHz, consists of four linearly placed microstrip patch antennas, 3-bit distributed RF MEMS low-loss phase shifters, and a corporate feed network. MEMS switches and high-Q metal-air-metal capacitors are employed as loading elements in the phase shifter. The system is fabricated monolithically using an in-house surface micromachining process on a glass substrate and occupies an area of 6 cm times 5 cm. The measurement results show that the phase shifter can provide nearly 20deg/50deg/95deg phase shifts and their combinations at the expense of 1.5-dB average insertion loss at 15 GHz for eight combinations. It is also shown by measurements that the main beam can be steered to required directions by suitable settings of the RF MEMS phase shifters.     

基于SP4T开关的4位MEMS开关线式移相器设计

设计了一款4位MEMS开关线式移相器,由SP4TMEMS开关和微带传输线构成,工作于X波段。单刀四掷(single pole 4throw,SP4T)开关用于切换两条不同电长度的信号通道,即参考相位通道和延迟相位通道。每个SP4T开关包含4个悬臂梁接触式RF MEMS串联开关。介绍了4位MEMS开关线式移相器的总体设计,并给出了其关键部件SP4T开关和相位延迟线的设计细节。采用ADS软件仿真分析了器件的电气性能。仿真分析得到:SP4T开关在中心频率10GHz处的回波损耗为-36dB,插入损耗约为0.18dB;移相器各相位的回波损耗均低于-15dB,插入损耗为-0.8～-0.4dB。这种射频MEMS移相器具有小型化、低功耗和高隔离度的优点。     

压电MEMS兰姆波器件技术的最新进展与展望

兰姆波谐振器(LWR)作为一种新兴的压电微机电系统(MEMS)声学器件,同时具有高工作频率、高机电耦合系数、高品质因数值及低功耗等特点,其制造工艺与集成电路工艺兼容,可在单片晶圆上实现多频率器件。基于LWR的声学滤波器是实现高性能射频前端组件的有效解决方案之一,能够满足未来通信设备多频率及集成化的发展要求,其相关研究已成为微声器件领域的热点。该文简要介绍了兰姆波的基本原理,综述了近年来基于氮化铝(AlN)薄膜和铌酸锂薄膜(LNOI)的压电MEMS兰姆波器件研究取得的最新成果,并讨论了压电MEMS兰姆波器件的发展趋势。     

Acoustic phonon characterisation of fixed-fixed beam MEMS switch

The reported work focuses on an acoustic phonon characterisation method for MEMS devices. This technique is uniquely suited to address challenges of MEMS device characterisation as a low cost and non-detechnique is uniquely suited to address challenges of MEMS device characterisation as a low cost and non-destructive method. The mechanical switching action of a fixed-fixed beam MEMS switch is characterised using this acoustic phonon characterisation technique and a correlation between phonon measurements and electrical waveforms is carried out. Insights on the mechanical state of the switch are also obtained using this acoustic phonon characterisation technique structive method. The mechanical switching action of a fixed-fixed beam MEMS switch is characterised using this acoustic phonon characterisation technique and a correlation between phonon measurements and electrical waveforms is carried out. Insights on the mechanical state of the switch are also obtained using this acoustic phonon characterisation technique.