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Hexagonal boron nitride nanosheets (h‐BNNSs) are obtained by a chemical exfoliation method from bulk h‐BN powders. The surface of h‐BNNSs is functionalized with 3‐aminopropyltriethoxysilane (APTS). Further, the amino functional groups on the surface of APTS‐modified h‐BNNSs (APTS‐BNNSs) are reacted with 4‐carboxyphenylboronic acid (CPBA) to obtain the covalently linked CPBA‐BNNSs. The morphology and structure of h‐BNNSs, APTS‐BNNSs, and CPBA‐BNNSs are comprehensively discussed. Of all the above four additives, the CPBA‐BNNSs can most outstandingly improve friction‐reducing and antiwear capacities of 150N base oil. The CPBA‐BNNSs possess excellent dispersion stability in base oil due to the phenylboronic acid groups on the surface of h‐BNNSs. Only 0.075 wt% CPBA‐BNNSs is added into the base oil, the coefficient of friction is decreased by 32.3%, and the wear scar diameter and mean wear volume of the rubbing surface are reduced by 42.9% and 88.4%. The analysis of the worn scar surface demonstrates that CPBA‐BNNSs can form a protective tribofilm containing boron and nitrogen elements on the rubbing surfaces, thereby decreasing the friction and protecting the surfaces from wear. Thus, the CPBA‐BNNSs may be recommended as a potential lubricant additive in practical applications.  相似文献   

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王现彬  赵正平 《材料导报》2016,30(5):52-56, 68
氮极性(N-polar)GaN与镓极性(Ga-polar)GaN极性相反,且具有较高的表面化学活性,使其在光电子、微电子及传感器等领域逐渐受到关注。文章结合一些相关研究报道,综述了N-polar GaN上欧姆接触的研究进展。首先对N-polar GaN材料的制备进行了分析,随后对N-polar GaN的欧姆接触电极的金属化方案及欧姆接触机理等内容进行了综合讨论,以期为实际N-polar GaN欧姆接触研究提供一些参考。  相似文献   

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GaN纳米线材料的特性和制备技术   总被引:3,自引:0,他引:3  
GaN是一种具有优越热稳定性和化学性质的宽禁带半导体材料,这种材料及相关器件可以工作在高温、高辐射等恶劣环境中,并可用于大功率微波器件.最近几年,由于GaN蓝光二极管的成功研制,使GaN成为了化合物半导体领域中最热门的研究课题.简要介绍了GaN纳米线材料的制备技术;综述了GaN纳米线材料的制备结果和特性.用CVD法研制的GaN纳米线的直径已经达到5~12nm,长度达到几百个微米.纳米线具有GaN的六方纤锌矿结构,其PL谱具有宽的发射峰,谱峰中心在420nm.GaN纳米线已经在肖特基二极管的研制中得到应用.  相似文献   

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Knowledge of materials' thermal‐transport properties, conductivity and diffusivity, is crucial for several applications within areas of biology, material science and engineering. Specifically, a microsized, flexible, biologically integrated thermal transport sensor is beneficial to a plethora of applications, ranging across plants physiological ecology and thermal imaging and treatment of cancerous cells, to thermal dissipation in flexible semiconductors and thermoelectrics. Living cells pose extra challenges, due to their small volumes and irregular curvilinear shapes. Here a novel approach of simultaneously measuring thermal conductivity and diffusivity of different materials and its applicability to single cells is demonstrated. This technique is based on increasing phonon‐boundary‐scattering rate in nanomembranes, having extremely low flexural rigidities, to induce a considerable spectral dependence of the bandgap‐emission over excitation‐laser intensity. It is demonstrated that once in contact with organic or inorganic materials, the nanomembranes' emission spectrally shift based on the material's thermal diffusivity and conductivity. This NM‐based technique is further applied to differentiate between different types and subtypes of cancer cells, based on their thermal‐transport properties. It is anticipated that this novel technique to enable an efficient single‐cell thermal targeting, allow better modeling of cellular thermal distribution and enable novel diagnostic techniques based on variations of single‐cell thermal‐transport properties.  相似文献   

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Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high‐frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical‐free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state‐of‐the‐art values for electrical performance, with electron mobility exceeding 2000 cm2 V?1 s?1 and sheet carrier density above 1.07 × 1013 cm?2. The influence of strain on the RF performance of flexible GaN high‐electron‐mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.  相似文献   

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In the latest years, the use of zinc oxide (ZnO) nanostructures has been proposed in different biomedical applications, however, to date, only a few contrasting results concerning their biocompatibility can be found in the literature. In particular, the application of the extraordinary piezoelectric properties of ZnO nanostructures has poorly been explored for the culture of electrically excitable cells, and, for this reason, systematic investigations of their interactions with these living systems appear to be necessary. In this paper, we report about adhesion, proliferation and differentiation of two mammalian cell lines (PC12, as model of neuronal cells, and H9c2, as model of muscle cells) over ZnO nanowire arrays. We demonstrate suitability of these arrays in sustaining cellular functions, and their potential in applications that range from tissue engineering to minimally invasive sensing and/or stimulation.  相似文献   

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Graphene has been adopted in III−V material growth since it can reduce the threading dislocations and the III−V epilayer can easily be separated from the substrate due to the weak chemical bond. However, depending on the substrate supporting the graphene, some substrates decompose in the III−V material growth environment, which results in the problem that no graphene remains. In this study, the influence of temperature‐dependent substrate decomposition on graphene through an annealing process that resembles conventional growth conditions in metal–organic chemical vapor deposition (MOCVD) is investigated. It is also confirmed that trimethylgallium, hydrogen, and ammonia gases do not directly affect the graphene loss through gallium nitride (GaN) growth on a graphene/sapphire. In addition, GaN grown on graphene/sapphire could separate, but GaN grown on a graphene/GaN template could not be separated due to GaN template decomposition and related graphene damage. Through further investigation for graphene/gallium arsenide, it is deduced that the gallium generated by substrate decomposition does not play a major role in damage to the graphene but instead the nitrogen generated by substrate decomposition is closely related to it. These results suggest that it is very important to adopt a decomposition‐free substrate that do not damage graphene during GaN growth in MOCVD.  相似文献   

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The combination of a neuromorphic architecture and photonic computing may open up a new era for computational systems owing to the possibility of attaining high bandwidths and the low‐computation‐power requirements. Here, the demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short‐term memory/long‐term memory, spike‐timing‐dependent plasticity, and neural facilitation, is reported. The synaptic functions are successfully emulated using the inherent persistent photoconductivity (PPC) characteristic of AOSs. Systematic analysis of the dynamics of photogenerated carriers for various AOSs is carried out to understand the fundamental mechanisms underlying the photoinduced carrier‐generation and relaxation behaviors, and to search for a proper channel material for photonic neuromorphic devices. It is found that the activation energy for the neutralization of ionized oxygen vacancies has a significant influence on the photocarrier‐generation and time‐variant recovery behaviors of AOSs, affecting the PPC behavior.  相似文献   

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余楚迎  林璇英  黄锐 《功能材料》2007,38(5):711-713
研究了以SiCl4/H2为气源、用等离子体增强化学气相沉积方法, 在低于300℃温度下所制备的pc-Si薄膜在长时间的光照下电导率的变化情况.实验结果表明,所制备的多晶硅薄膜具有类稳恒光电导效应,而且薄膜的稳恒光电导特性依赖于薄膜的晶化率和晶粒尺寸,随晶化率的增加和晶粒尺寸的增大而增大.  相似文献   

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A number of synapse devices have been intensively studied for the neuromorphic system which is the next-generation energy-efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca2+ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short-term plasticity, paired-pulse facilitation (PPF), and long-term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.  相似文献   

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Wurtzite (Ga,Fe)N bulk crystals were, for the first time, successfully grown by AMMONO and chemical transport methods. The magnetization measurements of (Ga,Fe)N crystals revealed the coexistence of paramagnetic and ferromagnetic contributions. The paramagnetic component was shown to be growth condition dependent. The Brillouin-type behavior was observed in the samples obtained by both methods. Some (Ga,Fe)N samples (especially those codoped with Si) grown by the chemical transport method show a Van Vleck–type paramagnetic behavior.  相似文献   

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Nanoparticles of gallium nitride, which are of great interest in optical technology, were synthesized and characterized. The surface chemical composition of these nanoparticles, which can affect the overall properties of the material, was analyzed by diffuse reflectance Fourier transform infrared spectrometry. The interaction of the GaN first atomic layer with acetic acid was investigated as a preliminary step for the deagglomeration study of the nanoparticles in polymer matrixes.  相似文献   

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Doping of rare-earth ions in epitaxial gallium nitride material has been performed through a thermal diffusion process. The technique involves a brief photolytic etching of the surface followed by heating with a melt of rare-earth salt under reducing conditions. Europium-doped GaN pumped with above gap UV radiation showed strong red emission which was insensitive to a moderately strong magnetic field. The temperature dependence of the intensity of this red emission is also described. Neodymium caused surface pitting, through an unknown chemical mechanism, and consequent enhancement of defect-generated yellow luminescence.  相似文献   

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Electrically conductive and biologically active scaffolds are desirable for enhancing adhesion, proliferation and differentiation of a number of cell types such as neurons. Hence, the incorporation of neuroactive molecules into electroconductive polymers via a specific and stable method is essential for neuronal tissue engineering applications. Traditional conjugation approaches dramatically impair conductivities and/or stabilities of the scaffolds and ligands. In this study, we developed copolymers (PPy-NSE) of N-hydroxyl succinimidyl ester pyrrole and regular pyrrole, which can be immobilized with nerve growth factor (NGF) without significantly hindering electroconductivity. The presence of active ester groups was confirmed using reflectance infrared spectroscopy and X-ray photoelectron spectroscopy (XPS) from the copolymers prepared from different monomer compositions. We selected PPy-NSE50 (polymerized from a 50 : 50 monomer ratio of pyrrole : pyrrole-NSE) for further modification with NGF because this copolymer retains good conductivity (approx. 8 S cm−1) and presents active ester groups for NGF immobilization. We tethered NGF on the PPy-NSE50 surface, and found that PC12 cells extended neurites similarly to cells cultured in NGF-containing medium. XPS and enzyme-linked immunosorbent assay confirmed that NGF immobilized via the active ester on the PPy-NSE50 film was stable for up to 5 days in phosphate-buffered saline solution. Also, application of an external electrical potential to NGF-immobilized PPy films did not cause a significant release of NGF nor reduce their neurotrophic activity. This novel scaffold, providing electroconductive and neurotrophic activities, has potential for neural applications, such as tissue engineering scaffolds and biosensors.  相似文献   

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