Polyazines and Polyazomethines with Didodecylthiophene Units for Selective Dispersion of Semiconducting Single‐Walled Carbon Nanotubes

Polymer wrapped single‐walled carbon nanotubes (SWNTs) have been demonstrated to be a very efficient technique to obtain high purity semiconducting SWNT solutions. However, the extraction yield of this technique is low compared to other techniques. Poly‐alkyl‐thiophenes have been reported to show higher extraction yield compare to polyfluorene derivatives. Here, the affinity for semiconducting SWNTs of two polymers with a backbone containing didodecylthiophene units interspersed with N atoms is reported. It is demonstrated that one of the polymers, namely, poly(2,5‐dimethylidynenitrilo‐3,4‐didodecylthienylene) (PAMDD), has very high semiconducting SWNT extraction yield compared to the poly(3,4‐didodecylthienylene)azine (PAZDD). The dissimilar wrapping efficiency of these two polymers for semiconducting SWNTs is attributed to the interplay between the affinity for the nitrogen atoms of the highly polarizable walls of SWNTs and the mechanical flexibility of the polymer backbones. Photoluminescence (PL) measurements demonstrate the presence of metallic tubes and SWNT bundles in the sample selected with PAZDD and higher purity of SWNT‐PAMDD samples. The high purity of the semiconducting SWNTs selected by PAMDD is further demonstrated by the high performance of the solution‐processed field‐effect transistors (FETs) fabricated using a blade coating technique, which exhibit hole mobilities up to 33.3 cm² V^?1 s^?1 with on/off ratios of 10⁶.     

Selective Electrochemical Etching of Single‐Walled Carbon Nanotubes

Single‐walled carbon nanotubes (SWNTs) are a promising material for future nanotechnology. However, their applications are still limited in success because of the co‐existence of metallic SWNTs and semiconducting SWNTs produced samples. Here, electrochemical etching, which shows both diameter and electrical selectivity, is demonstrated to remove SWNTs. With the aid of a back‐gate electric field, selective removal of metallic SWNTs is realized, resulting in high‐performance SWNT field‐effect transistors with pure semiconducting SWNT channels. Moreover, electrochemical etching is realized on a selective area. These findings would be valuable for research and the application of SWNTs in electrochemistry and in electronic devices.     

High‐Strength Laminated Copper Matrix Nanocomposites Developed from a Single‐Walled Carbon Nanotube Film with Continuous Reticulate Architecture

A critical challenge in nanocomposite fabrication by adding SWCNTs as reinforcement is to realize an effective transfer of the excellent mechanical properties of the SWCNTs to the macroscale mechanical properties of the matrix. Using directly grown SWCNT films with continuous reticulate structure as the template, Cu/SWCNTs/Cu laminated nanocomposites are fabricated by an electrodepositing process. The resulting Cu/SWCNTs/Cu laminated nanocomposites exhibit extremely high strength and Young's modulus. The estimated Young's modulus of the SWCNT bundles in the composite are between 860 and 960 GPa. Such a high strength and an effective load‐transfer capacity are ascribed to the unique continuous reticulate architecture of SWCNT films and the strong interfacial strength between the SWCNTs and Cu matrix. Raman spectroscopy is used to characterize the loading status of the SWCNTs in the strained composite. It provides a route to investigate the load transfer of SWCNTs in the metal matrix composites.     

Electrochemical Properties of High‐Power Supercapacitors Using Single‐Walled Carbon Nanotube Electrodes

We have investigated the key factors determining the performance of supercapacitors constructed using single‐walled carbon nanotube (SWNT) electrodes. Several parameters, such as composition of the binder, annealing temperature, type of current collector, charging time, and discharging current density have been optimized for the best performance of the supercapacitor with respect to energy density and power density. We find a maximum specific capacitance of 180 F/g and a measured power density of 20 kW/kg at energy densities in the range from 7 to 6.5 Wh/kg at 0.9 V in a solution of 7.5 N KOH (the currently available supercapacitors have energy densities in the range 6–7 Wh/kg and power density in the range 0.2–5 kW/kg at 2.3 V in non‐aqueous solvents).     

Nonvolatile Ferroelectric P(VDF‐TrFE) Memory Transistors Based on Inkjet‐Printed Organic Semiconductor

Nonvolatile ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) memory based on an organic thin‐film transistor with inkjet‐printed dodecyl‐substituted thienylenevinylene‐thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of ?12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 cm²/Vs, 10⁵, and 10^?10 A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.     

Sources of Hysteresis in Carbon Nanotube Field‐Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures

The origins of gate‐induced hysteresis in carbon nanotube field‐effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modified processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep‐rate reveals the locations, types, and densities of defects that contribute to hysteresis. Devices with designs that eliminate these defects exhibit more than ten times reduction in hysteresis compared to conventional layouts. Demonstrations in individual transistors that use both networks and arrays of nanotubes, and in simple logic gates built with these devices, illustrate the utility of the proposed approaches.     

Charged Rod‐Like Nanoparticles Assisting Single‐Walled Carbon Nanotube Dispersion in Water

A new dispersant for stabilization of single wall carbon nanotubes (SWNTs) in water that simultaneously utilizes three different dispersion or stabilization mechanisms: surfactant adsorption, polymeric wrapping, and Coulomb repulsive interaction, has been demonstrated. The new dispersant, a charged rod‐like nanoparticle (cROD), is a cylindrical micelle wrapped by negatively charged polymers which is fabricated by the aqueous free radical polymerization of a polymerizable cationic surfactant, cetyltrimethylammonium 4‐vinylbenzoate (CTVB), in the presence of sodium 4‐styrenesulfonate (NaSS). The surface charge density of the cRODs is controlled by varying the concentration of NaSS. Dispersions of SWNTs are obtained by sonicating a mixture of SWNTs and cROD in water, followed by ultra‐centrifugation and decanting. While the cRODs with neutral or low surface change densities (0 and 5 mol % NaSS) result in very low dispersion power and poor stability, the cRODs with high surface charge densities (15, 25, and 40 mol % NaSS) produce excellent dispersions with SWNT concentration as high as 437 mg L^?1 and long term stability. The sharp van Hove transition peaks of the cROD assisted SWNT dispersions indicate the presence of individually isolated SWNTs. Atomic force microscopy and small angle neutron scattering analysis show that the dominant encapsulation structure of the cROD assisted SWNTs is surfactant assisted polymeric wrapping. SWNTs dispersed by the cRODs can be fully dried and easily re‐dispersed in water, providing enhanced processibility of SWNTs.     

Recent Advances in Applications of Sorted Single‐Walled Carbon Nanotubes

Single‐walled carbon nanotubes (SWCNTs) exhibit outstanding properties that make them appealing in a wide range of applications. However, their properties are variable depending on the tube helicity (chirality), which has been a challenge for a long time and needs to be effectively controlled. In recent years, tremendous efforts have been made to control the electrical type/chirality of nanotubes through both direct controlled synthesis and postsynthesis separation methods. Driven by these breakthroughs, the applications of separated families of SWCNTs in various fields have emerged as a new topic of research. In this Review, an overview of recent advances in the use of highly purified and well‐separated SWCNTs in a comprehensive range of applications is presented including photovoltaics, transistors, batteries, sensors, light emitters, biological/medical fields, and others. Finally, important future directions for the utilization of separated SWCNTs in these fields are provided.     

Octadecylamine‐Functionalized Single‐Walled Carbon Nanotubes for Facilitating the Formation of a Monolithic Perovskite Layer and Stable Solar Cells

Organic–inorganic lead halide perovskites have shown great future for application in solar cells owing to their exceptional optical and electronic properties. To achieve high‐performance perovskite solar cells, a perovskite light absorbing layer with large grains is desirable in order to minimize grain boundaries and recombination during the operation of the device. Herein, a simple yet efficient approach is developed to synthesize perovskite films consisting of monolithic‐like grains with micrometer size through in situ deposition of octadecylamine functionalized single‐walled carbon nanotubes (ODA‐SWCNTs) onto the surface of the perovskite layer. The ODA‐SWCNTs form a capping layer that controls the evaporation rate of organic solvents in the perovskite film during the postthermal treatment. This favorable morphology in turn dramatically enhances the short‐circuit current density of the perovskite solar cells and almost completely eliminates the hysteresis. A maximum power conversion efficiency of 16.1% is achieved with an ODA‐SWCNT incorporated planar solar cell using (FA_0.83MA_0.17)_0.95Cs_0.05Pb(I_0.83Br_0.17)₃ as light absorber. Furthermore, the perovskite solar cells with ODA‐SWCNT demonstrate extraordinary stability with performance retention of 80% after 45 d stability testing under high humidity (60–90%) environment. This work opens up a new avenue for morphology manipulation of perovskite films and enhances the device stability using carbon material.     

Temperature‐Dependent Electrical Transport in Polymer‐Sorted Semiconducting Carbon Nanotube Networks

The temperature dependence of the electrical characteristics of field‐effect transistors (FETs) based on polymer‐sorted, large‐diameter semiconducting carbon nanotube networks is investigated. The temperature dependences of both the carrier mobility and the source‐drain current in the range of 78 K to 293 K indicate thermally activated, but non‐Arrhenius, charge transport. The hysteresis in the transfer characteristics of FETs shows a simultaneous reduction with decreasing temperature. The hysteresis appears to stem from screening of charges that are transferred from the carbon nanotubes to traps at the surface of the gate dielectric. The temperature dependence of sheet resistance of the carbon nanotube networks, extracted from FET characteristics at constant carrier concentration, specifies fluctuation‐induced tunneling as the mechanism responsible for charge transport, with an activation energy that is dependent on film thickness. Our study indicates inter‐tube tunneling to be the bottleneck and implicates the role of the polymer coating in influencing charge transport in polymer‐sorted carbon nanotube networks.     

Gas Diffusion,Energy Transport,and Thermal Accommodation in Single‐Walled Carbon Nanotube Aerogels

The thermal conductivity of gas‐permeated single‐walled carbon nanotube (SWCNT) aerogel (8 kg m^?3 density, 0.0061 volume fraction) is measured experimentally and modeled using mesoscale and atomistic simulations. Despite the high thermal conductivity of isolated SWCNTs, the thermal conductivity of the evacuated aerogel is 0.025 ± 0.010 W m^?1 K^?1 at a temperature of 300 K. This very low value is a result of the high porosity and the low interface thermal conductance at the tube–tube junctions (estimated as 12 pW K^?1). Thermal conductivity measurements and analysis of the gas‐permeated aerogel (H₂, He, Ne, N₂, and Ar) show that gas molecules transport energy over length scales hundreds of times larger than the diameters of the pores in the aerogel. It is hypothesized that inefficient energy exchange between gas molecules and SWCNTs gives the permeating molecules a memory of their prior collisions. Low gas‐SWCNT accommodation coefficients predicted by molecular dynamics simulations support this hypothesis. Amplified energy transport length scales resulting from low gas accommodation are a general feature of CNT‐based nanoporous materials.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.     

Continuous Band‐Filling Control and One‐Dimensional Transport in Metallic and Semiconducting Carbon Nanotube Tangled Films

Field‐effect transistors that employ an electrolyte in place of a gate dielectric layer can accumulate ultrahigh‐density carriers not only on a well‐defined channel (e.g., a two‐dimensional surface) but also on any irregularly shaped channel material. Here, on thin films of 95% pure metallic and semiconducting single‐walled carbon nanotubes (SWNTs), the Fermi level is continuously tuned over a very wide range, while their electronic transport and absorption spectra are simultaneously monitored. It is found that the conductivity of not only the semiconducting but also the metallic SWNT thin films steeply changes when the Fermi level reaches the edges of one‐dimensional subbands and that the conductivity is almost proportional to the number of subbands crossing the Fermi level, thereby exhibiting a one‐dimensional nature of transport even in a tangled network structure and at room temperature.     

Single‐Walled Carbon Nanotube/Phase Change Material Composites: Sunlight‐Driven,Reversible, Form‐Stable Phase Transitions for Solar Thermal Energy Storage

The development of solar energy conversion materials is critical to the growth of a sustainable energy infrastructure in the coming years. A novel hybrid material based on single‐walled carbon nanotubes (SWNTs) and form‐stable polymer phase change materials (PCMs) is reported. The obtained materials have UV‐vis sunlight harvesting, light‐thermal conversion, thermal energy storage, and form‐stable effects. Judicious application of this efficient photothermal conversion to SWNTs has opened up a rich field of energy materials based on novel SWNT/PCM composits with enhanced performance in energy conversion and storage.     

Mesoporous Silica Coated Single‐Walled Carbon Nanotubes as a Multifunctional Light‐Responsive Platform for Cancer Combination Therapy

The development of cancer combination therapies, many of which rely on nanoscale theranostic agents, has received increasing attention in recent years. In this work, polyethylene glycol (PEG) modified mesoporous silica (MS) coated single‐walled carbon nanotubes (SWNTs) are fabricated and utilized as a multifunctional platform for imaging guided combination therapy of cancer. A model chemotherapy drug, doxorubicin (DOX), could be loaded into the mesoporous structure of the obtained SWNT@MS‐PEG nano‐carriers with high efficiency. Upon stimulation under near‐infrared (NIR) light, photothermally triggered drug release from DOX loaded SWNT@MS‐PEG is observed inside cells, resulting in a synergistic cancer cell killing effect. As revealed by both photoacoustic (PA) and magnetic resonance (MR) imaging, we further uncover efficient tumor accumulation of SWNT@MS‐PEG/DOX after intravenous injection into mice. In vivo combination therapy using this agent is further demonstrated in a mouse tumor model, achieving a remarkable synergistic anti‐tumor effect superior to that obtained by mono‐therapy. Our work presents a new type of theranostic nano‐platform, which could load therapeutic molecules with high efficiency, be responsive to external NIR stimulation, and at the same time serve as a diagnostic imaging agent.     

Manipulating the Hysteresis in Poly(vinyl alcohol)‐Dielectric Organic Field‐Effect Transistors Toward Memory Elements

The origins of hysteresis in organic field‐effect transistors (OFETs) and its applications in organic memory devices is investigated. It is found that the orientations of the hydroxyl groups in poly(vinyl alcohol) (PVA) gate dielectrics are correlated with the hysteresis of transfer characteristics in pentacene‐based OFETs under the forward and backward scan. The applied gate bias partially aligns the orientations of the hydroxyl groups perpendicular to the substrate as characterized by reflective absorption Fourier transform infrared spectroscopy (RA‐FTIR), in which the field‐induced surface dipoles at the pentacene/PVA interface trap charges and cause the hysteresis. Treating PVA with an anhydrous solvent eliminates the residual moisture in the dielectrics layer, allowing for more effective control of the induced dipoles by the applied gate bias. OFETs of dehydrated‐PVA dielectrics present a pronounced shift of the threshold voltage (ΔV_Th) of 35.7 V in transfer characteristics, higher than that of 18.5 V for untreated devices and results in sufficient dynamic response for applications in memory elements. This work highlights the usage of non‐ferroelectric gate dielectrics to fabricate OFET memory elements by manipulating the molecular orientations in the dielectrics layer.     

Synthesis and Properties of a Water‐Soluble Single‐Walled Carbon Nanotube–Poly(m‐aminobenzene sulfonic acid) Graft Copolymer

Poly(m‐aminobenzene sulfonic acid) (PABS), was covalently bonded to single‐walled carbon nanotubes (SWNTs) to form a water‐soluble nanotube–polymer compound (SWNT–PABS). The conductivity of the SWNT–PABS graft copolymer was about 5.6 × 10^–3 S cm^–1, which is much higher than that of neat PABS (5.4 × 10^–7 S cm^–1). The mid‐IR spectrum confirmed the formation of an amide bond between the SWNTs and PABS. The ¹H NMR spectrum of SWNT–PABS showed the absence of free PABS, while the UV/VIS/NIR spectrum of SWNT–PABS showed the presence of the interband transitions of the semiconducting SWNTs and an absorption at 17 750 cm^–1 due to the PABS addend.     

Polymer Field‐Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene,Two Insulator Layers,and a Metal Ink Gate

The mass production technique of gravure contact printing is used to fabricate state‐of‐the art polymer field‐effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravure‐printed: the semiconductor poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), two insulator layers, and an Ag gate. A crosslinkable insulator and an Ag ink are developed which are both printable and highly robust. Printing in ambient and using this bottom‐contact/top‐gate geometry, an on/off ratio of >10⁴ and a mobility of 0.04 cm² V^?1 s^?1 are achieved. This rivals the best top‐gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min^?1 on a flexible polymer substrate demonstrates that very high‐volume, reel‐to‐reel production of organic electronic devices is possible.     

Temperature Performance of Doping‐Free Top‐Gate CNT Field‐Effect Transistors: Potential for Low‐ and High‐Temperature Electronics

High‐performance top‐gate carbon nanotube (CNT) field‐effect transistors (FETs) have been fabricated via a doping‐free fabrication process in which the polarity of the CNT FET is controlled by the injection of carriers from the electrodes, instead of using dopants. The performance of the doping‐free CNT FETs is systemically investigated over a wide temperature range, from very low temperatures of down to 4.3 K up to 573 K, and analyzed using several temperature‐dependent key device parameters including the ON/OFF state current and ratio, carrier mobility, and subthreshold swing. It is demonstrated that for ballistic and quasi‐ballistic CNT FETs, the operation of the CNT FETs is largely independent of the presence of dopant, thus avoiding detrimental effects due to dopant freeze‐out at low temperature and dopant diffusion at high temperature, and making it possible to use doping‐free CNT FETs in both low‐ and high‐temperature electronics. A new method is also proposed for extracting the band‐gap and diameter of a semiconducting CNT from the temperature dependent OFF‐state current and shown to yield results that are consistent with AFM measurements.