High‐Performance UV–Vis–NIR Phototransistors Based on Single‐Crystalline Organic Semiconductor–Gold Hybrid Nanomaterials

Hybrid materials in optoelectronic devices can generate new functionality or provide synergistic effects that enhance the properties of each component. Here, high‐performance phototransistors with broad spectral responsivity in UV–vis–near‐infrared (NIR) regions, using gold nanorods (Au NRs)‐decorated n‐type organic semiconductor and N ,N ′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI) nanowires (NWs) are reported. By way of the synergistic effect of the excellent photo‐conducting characteristics of single‐crystalline BPE‐PTCDI NW and the light scattering and localized surface plasmon resonances (LSPR) of Au NRs, the hybrid system provides new photo‐detectivity in the NIR spectral region. In the UV–vis region, hybrid nanomaterial‐based phototransistors exhibit significantly enhanced photo‐responsive properties with a photo‐responsivity (R ) of 7.70 × 10⁵ A W^?1 and external quantum efficiency (EQE) of 1.42 × 10⁸% at the minimum light intensity of 2.5 µW cm^?2, which are at least tenfold greater than those of pristine BPE‐PTCDI NW‐based ones and comparable to those of high‐performance inorganic material‐based devices. While a pristine BPE‐PTCDI NW‐based photodetector is insensitive to the NIR spectral region, the hybrid NW‐based phototransistor shows an R of 10.7 A W^?1 and EQE of 1.35 × 10³% under 980 nm wavelength‐NIR illumination. This work demonstrates a viable approach to high‐performance photo‐detecting systems with broad spectral responsivity.     

High‐Performance Organic Heterojunction Phototransistors Based on Highly Ordered Copper Phthalocyanine/para‐Sexiphenyl Thin Films

High‐performance organic heterojunction phototransistors are fabricated using highly ordered copper phthalocyanine (CuPc) and para ‐sexiphenyl (p ‐6P) thin films. The p ‐6P thin film plays an important role on the performance of CuPc/p ‐6P heterojunction phototransistors. It acts as a molecular template layer to induce the growth of highly ordered CuPc thin film, which dramatically improves the charge transport and decreases the grain boundaries. On the other hand, the p ‐6P thin film can form an effective heterojunction with CuPc thin film, which is greatly helpful to enhance the light absorption and photogenerated carriers. Under 365 nm ultraviolet light irradiation, the ratio of photocurrent and dark current and photoresponsivity of CuPc/p ‐6P heterojunction phototransistors reaches to about 2.2 × 10⁴ and 4.3 × 10² A W^?1, respectively, which are much larger than that of CuPc phototransistors of about 2.7 × 10² and 7.3 A W^?1, respectively. A detailed study carried out with current sensing atomic force microscopy proves that the photocurrent is predominately produced inside the highly ordered CuPc/p ‐6P heterojunction grains, while the photocurrent produced at the boundaries between grains can be neglected. The research provides a good method for fabricating high‐performance organic phototransistors using a combination of molecular template growth and organic heterojunction.     

High‐Performance Thermally Stable Organic Phototransistors Based on PSeTPTI/PC61BM for Visible and Ultraviolet Photodetection

Phototransistors are three‐terminal photodetectors which usually have higher photosensitivity than photodiodes due to the presence of gate electrode. In this report, organic phototransistors (OPTs) based on a donor material, namely, poly{2,5‐selenophene‐alt‐2,8‐(4,10‐bis(2‐hexyldecyl))thieno[2′,3′:5,6]­pyrido[3,4‐g]thieno[3,2‐c]isoquinoline‐5,11(4H,10H)‐dione} (PSeTPTI), are fabricated and intensively studied. As unipolar p‐type organic semiconductor usually has plenty of electron traps in the bulk to impede electron transporting, most of photogenerated electrons will fill the traps in PSeTPTI and this process can prolong the response time. By introducing [6,6]‐phenyl C₆₁ butyric acid methyl ester on top, the p–n heterojunction can produce most of the photocurrent and eliminates the influence from the process of trapping electrons. This mechanism improves the photoresponsivity and response speed. Since ultraviolet (UV) detection is very important in some fields including military, aerospace, and biology, the OPTs are characterized under UV illumination besides the visible light and they present high sensitivity. Furthermore, organic semiconductors often have bad stability in harsh conditions and meanwhile some devices need to work in these environments. At high temperature even up to 200 °C, our OPTs can work normally and show very high stability, indicating the potential of the devices in applications of high‐temperature environments.     

Liquid‐Crystalline Perylene Diester Polymers with Tunable Charge‐Carrier Mobility

New classes of liquid‐crystalline semiconductor polymers based on perylene diester benzimidazole and perylene diester imide mesogens are reported. Two highly soluble side‐chain polymers, poly(perylene diester benzimidazole acrylate) (PPDB) and poly(perylene diester imide acrylate) (PPDI) are synthesized by nitroxide‐mediated radical polymerization (NMRP). PPDB shows n‐type semiconductor performance with electron mobilities of 3.2 × 10^?4 cm² V^?1 s^?1 obtained in a diode configuration by fitting the space‐charge‐limited currents (SCLC) according to the Mott–Gurney equation. Interestingly, PPDI performs preferentially as a p‐type material with a hole mobility of 1.5 × 10^?4 cm² V^?1 s^?1, which is attributed to the less electron‐deficient perylene core of PPDI compared to PPDB. Optical properties are investigated by UV‐vis and fluorescence spectroscopy. The extended π‐conjugation system due to the benzimidazole unit of PPDB leads to a considerably broader absorption in the visible region compared to PPDI. HOMO and LUMO levels of the polymers are also determined by cyclic voltammetry; the resulting energy band‐gaps are 1.86 eV for PPDB and 2.16 eV for PPDI. Thermal behavior and liquid crystallinity are studied by differential scanning calorimetry, polarized optical microscopy, and X‐ray diffraction measurements. The results indicate liquid‐crystalline order of the polymers over a broad temperature range. These thermal, electrical, and optical properties make the perylene side‐chain polymers attractive materials for organic photovoltaics.     

Effects of Arylene Diimide Thin Film Growth Conditions on n‐Channel OFET Performance

A series of eight perylene diimide (PDI)‐ and naphthalene diimide (NDI)‐based organic semiconductors was used to fabricate organic field‐effect transistors (OFETs) on bare SiO₂ substrates, with the substrate temperature during film deposition (T_d) varied from 70–130 °C. For the N,N′‐n‐octyl materials that form highly ordered films, the mobility (µ) and current on‐off ratio (I_on/I_off) increase slightly from 70 to 90 °C, and remain relatively constant between 90 and 130 °C. I_on/I_off and µ of dibromo‐PDI‐based OFETs decrease with increasing T_d, while films of N,N′‐1H,1H‐perfluorobutyl dicyanoperylenediimide (PDI‐FCN₂) exhibit dramatic I_on/I_off and µ enhancements with increasing T_d. Increased OFET mobility can be correlated with higher levels of molecular ordering and minimization of film morphology surface irregularities. Additionally, the effects of SiO₂ surface modification with trimethylsilyl and octadecyltrichlorosilyl monolayers, as well as with polystyrene, are investigated for N,N′‐n‐octyl dicyanoperylenediimide (PDI‐8CN₂) and PDI‐FCN₂ films deposited at T_d = 130 °C. The SiO₂ surface treatments have modest effects on PDI‐8CN₂ OFET mobilities, but modulate the mobility and morphology of PDI‐FCN₂ films substantially. Most importantly, the surface treatments result in substantially increased V_th and decreased I_off values for the dicyanoperylenediimide films relative to those grown on SiO₂, resulting in V_th > 0.0 V and I_on/I_off ratios as high as 10⁸. Enhancements in current modulation for these high‐mobility, air‐stable, and solution‐processable n‐type semiconductors, should prove useful in noise‐margin enhancement and further improvements in organic electronics.     

Thin Films of Dendritic Anatase Titania Nanowires Enable Effective Hole‐Blocking and Efficient Light‐Harvesting for High‐Performance Mesoscopic Perovskite Solar Cells

To achieve high‐performance perovskite solar cells, especially with mesoscopic cell structure, the design of the electron transport layer (ETL) is of paramount importance. Highly branched anatase TiO₂ nanowires (ATNWs) with varied orientation are grown via a facile one‐step hydrothermal process on a transparent conducting oxide substrate. These films show good coverage with optimization obtained by controlling the hydrothermal reaction time. A homogeneous methyl­ammonium lead iodide (CH₃NH₃PbI₃) perovskite thin film is deposited onto these ATNW films forming a bilayer architecture comprising of a CH₃NH₃PbI₃ sensitized ATNW bottom layer and a CH₃NH₃PbI₃ capping layer. The formation, grain size, and uniformity of the perovskite crystals strongly depend on the degree of surface coverage and the thickness of the ATNW film. Solar cells constructed using the optimized ATNW thin films (220 nm in thickness) yield power conversion efficiencies up to 14.2% with a short‐circuit photocurrent density of 20.32 mA cm^?2, an open‐circuit photovoltage of 993 mV, and a fill factor of 0.70. The dendritic ETL and additional perovskite capping layer efficiently capture light and thus exhibit a superior light harvesting efficiency. The ATNW film is an effective hole‐blocking layer and efficient electron transport medium for excellent charge separation and collection within the cells.     

High‐Performance Phototransistors Based on Organic Microribbons Prepared by a Solution Self‐Assembly Process

Oligoarenes as an alternative group of promising semiconductors in organic optoelectronics have attracted much attention. However, high‐performance and low‐cost opto‐electrical devices based on linear asymmetric oligoarenes with nano/microstructures are still rarely studied because of difficulties both in synthesis and high‐quality nano/microstructure growth. Here, a novel linear asymmetric oligoarene 6‐methyl‐anthra[2,3‐b]benzo[d]thiophene (Me‐ABT) is synthesized and its high‐quality microribbons are grown by a solution process. The solution of Me‐ABT exhibits a moderate fluorescence quantum yield of 0.34, while the microribbons show a glaucous light emission. Phototransistors based on an individual Me‐ABT microribbon prepared by a solution‐phase self‐assembly process showed a high mobility of 1.66 cm² V^?1 s^?1, a large photoresponsivity of 12 000 A W^?1, and a photocurrent/dark‐current ratio of 6000 even under low light power conditions (30 µW cm^?2). The measured photoresponsivity of the devices is much higher than that of inorganic single‐crystal silicon thin film transistors. These studies should boost the development of the organic semiconductors with high‐quality microstructures for potential application in organic optoelectronics.     

Control of the Morphology and Structural Development of Solution‐Processed Functionalized Acenes for High‐Performance Organic Transistors

Solution‐processable functionalized acenes have received special attention as promising organic semiconductors in recent years because of their superior intermolecular interactions and solution‐processability, and provide useful benchmarks for organic field‐effect transistors (OFETs). Charge‐carrier transport in organic semiconductor thin films is governed by their morphologies and molecular orientation, so self‐assembly of these functionalized acenes during solution processing is an important challenge. This article discusses the charge‐carrier transport characteristics of solution‐processed functionalized acene transistors and, in particular, focuses on the fine control of the films' morphologies and structural evolution during film‐deposition processes such as inkjet printing and post‐deposition annealing. We discuss strategies for controlling morphologies and crystalline microstructure of soluble acenes with a view to fabricating high‐performance OFETs.     

High‐Mobility n‐Type Organic Transistors Based on a Crystallized Diketopyrrolopyrrole Derivative

A new high‐performing small molecule n‐channel semiconductor based on diketopyrrolopyrrole (DPP), 2,2′‐(5,5′‐(2,5‐bis(2‐ethylhexyl)‐3,6‐dioxo‐2,3,5,6‐tetrahydropyrrolo[3,4‐c]pyrrole‐1,4‐diyl)bis(thiophene‐5,2‐diyl))bis(methan‐1‐yl‐1‐ylidene)dimalononitrile (DPP‐T‐DCV), is successfully synthesized. The frontier molecular orbitals in this designed structure are elaborately tuned by introducing a strong electron‐accepting functionality (dicyanovinyl). The well‐defined lamellar structures of the crystals display a uniform terrace step height corresponding to a molecular monolayer in the solid‐state. As a result of this tuning and the remarkable crystallinity derived from the conformational planarity, organic field‐effect transistors (OFETs) based on dense‐packed solution‐processed single‐crystals of DPP‐T‐DCV exhibit an electron mobility (μ_e) up to 0.96 cm² V^?1 s^?1, one of the highest values yet obtained for DPP derivative‐based n‐channel OFETs. Polycrystalline OFETs show promise (with an μ_e up to 0.64 cm² V^?1 s^?1) for practical utility in organic device applications.     

High‐Mobility Air‐Stable Solution‐Shear‐Processed n‐Channel Organic Transistors Based on Core‐Chlorinated Naphthalene Diimides

High charge carrier mobility solution‐processed n‐channel organic thin‐film transistors (OTFTs) based on core‐chlorinated naphthalene tetracarboxylic diimides (NDIs) with fluoroalkyl chains are demonstrated. These OTFTs were prepared through a solution shearing method. Core‐chlorination of NDIs not only increases the electron mobilities of OTFTs, but also enhances their air stability, since the chlorination in the NDI core lowers the lowest unoccupied molecular orbital (LUMO) levels. The air‐stability of dichlorinated NDI was better than that of the tetrachlorinated NDIs, presumably due to the fact that dichlorinated NDIs have a denser packing of the fluoroalkyl chains and less grain boundaries on the surface, reducing the invasion pathway of ambient oxygen and moisture. The devices of dichlorinated NDIs exhibit good OTFT performance, even after storage in air for one and a half months. Charge transport anisotropy is observed from the dichlorinated NDI. A dichlorinated NDI with ?CH₂C₃F₇ side chains reveals high mobilities of up to 0.22 and 0.57 cm² V^?1 s^?1 in parallel and perpendicular direction, respectively, with regard to the shearing direction. This mobility anisotropy is related to the grain morphology. In addition, we find that the solution‐shearing deposition affects the molecular orientation in the crystalline thin films and lowers the d(001)‐spacing (the out‐of‐plane interlayer spacing), compared to the vapor‐deposited thin films. Core‐chlorinated NDI derivatives are found to be highly suitable for n‐channel active materials in low‐cost solution‐processed organic electronics.     

Self‐Assembled Nanowires of Organic n‐Type Semiconductor for Nonvolatile Transistor Memory Devices

Organic nonvolatile transistor‐type memory (ONVM) devices are developed using self‐assembled nanowires of n‐type semiconductor, N,N′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI). The effects of nanowire dimension and silane surface treatment on the memory characteristics are explored. The diameter of the nanowires is reduced by increasing the non‐solvent methanol composition, which led to the enhanced crystallinity and high field‐effect mobility. The BPE‐PTCDI nanowires with small diameters induce high electrical fields and result in a large memory window (the shifting of the threshold voltage, ΔV_th). The ΔV_th value of BPE‐PTCDI nanowire based ONVM device on the bare substrate can reach 51 V, which is significantly larger than that of thin film. The memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 10⁴ and the long retention time (10⁴ s), using a hydrophobic surface (such as trichloro(phenyl)silane‐treated surface). The above results demonstrate that the n‐type semiconducting nanowires have potential applications in high performance non‐volatile transistor memory devices.     

High‐Color‐Rendering and High‐Efficiency White Organic Light‐Emitting Devices Based on Double‐Doped Organic Single Crystals

Organic single crystals with much higher carrier mobility and stability compared to the amorphous organic materials have shown great potential in electronic and optoelectronic devices. However, their applications in white organic light‐emitting devices (WOLEDs), especially the three‐color‐strategy WOLEDs, have been hindered by the difficulties in fabricating complicated device structures. Here, double‐doped white‐emission organic single crystals are used as the active layers for the first time in the three‐color‐strategy WOLEDs by co‐doping the red and green dopants into blue host crystals. Precise control of the dopant concentration in the double‐doped crystals results in moderately partial energy transfer from the blue donor to the green and red dopants, and thereafter, simultaneous RGB emissions with balanced emission intensity. The highest color‐rendering index (CRI) and efficiency, to the best of the authors' knowledge, are obtained for the crystal‐based WOLEDs. The CRI of the WOLEDs varies between 80 and 89 with the increase of the driving current, and the luminance and current efficiency reach up to 793 cd m^?2 and 0.89 cd A^?1, respectively. The demonstration of the present three‐color organic single‐crystal‐based WOLED promotes the development of the single crystals in optoelectronics.     

Deep‐Red/Near‐Infrared Electroluminescence from Single‐Component Charge‐Transfer Complex via Thermally Activated Delayed Fluorescence Channel

Formation of a single‐component charge‐transfer complex (SCCTC) is unveiled in solid state of an intermolecular charge‐transfer molecule 2‐(4‐(1‐phenyl‐1H‐phenanthro[9,10‐d]imidazol‐2‐yl)phenyl)anthracene‐9,10‐dione (PIPAQ). Intermolecular donor–acceptor interactions between two PIPAQ molecules is the primary driving force for self‐association and contributes to intermolecular charge transfer. The SCCTC character is fully verified by crystallographic, photophysical, electron spin resonance, and vibrational characterizations. The PIPAQ‐based SCCTC is first applied in light‐emitting devices as an emissive layer to realize efficient deep‐red/near‐infrared electroluminescence. This work provides new insights into SCCTC and represents an important step toward their applications in optoelectronic devices.     

Ultrathin,Organic, Semiconductor/Polymer Blends by Scanning Corona‐Discharge Coating for High‐Performance Organic Thin‐Film Transistors

A new thin‐film coating process, scanning corona‐discharge coating (SCDC), to fabricate ultrathin tri‐isopropylsilylethynyl pentacene (TIPS‐PEN)/amorphous‐polymer blend layers suitable for high‐performance, bottom‐gate, organic thin‐film transistors (OTFTs) is described. The method is based on utilizing the electrodynamic flow of gas molecules that are corona‐discharged at a sharp metallic tip under a high voltage and subsequently directed towards a bottom electrode. With the static movement of the bottom electrode, on which a blend solution of TIPS‐PEN and an amorphous polymer is deposited, SCDC provides an efficient route to produce uniform blend films with thicknesses of less than one hundred nanometers, in which the TIPS‐PEN and the amorphous polymer are vertically phase‐separated into a bilayered structure with a single‐crystalline nature of the TIPS‐PEN. A bottom‐gate field‐effect transistor with a blend layer of TIPS‐PEN/polystyrene (PS) (90/10 wt%) operated at ambient conditions, for example, indeed exhibits a highly reliable device performance with a field‐effect mobility of approximately 0.23 cm² V^?1 s^?1: two orders of magnitude greater than that of a spin‐coated blend film. SCDC also turns out to be applicable to other amorphous polymers, such as poly(α‐methyl styrene) and poly(methyl methacrylate) and, readily combined with the conventional transfer‐printing technique, gives rise to micropatterned arrays of TIPS‐PEN/polymer films.     

Supramolecular Order of Solution‐Processed Perylenediimide Thin Films: High‐Performance Small‐Channel n‐Type Organic Transistors

N,N′‐1H,1H‐perfluorobutyl dicyanoperylenecarboxydiimide (PDIF‐CN₂), a soluble and air stable n‐type molecule, undergoes significant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge‐on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF‐CN₂ molecules. The presence of a pronounced π–π stacking is confirmed by combining near‐edge X‐ray absorption fine structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measurements. The remarkable charge carrier mobility measured in field‐effect transistors, using both bottom‐ and top‐contact (bottom‐gate) configurations, underlines the importance of strong intermolecular interactions for the realization of high performing devices.     

Organic Bidirectional Phototransistors Based on Diketopyrrolopyrrole and Fullerene

It is shown that simple bilayer devices consisting of the diketopyrrolopyrrole (DPP) monomer Ph‐TDPP‐Ph as donor and C₆₀ as acceptor feature J–V‐characteristics of a bidirectional organic phototransistor where illumination intensity plays the role of the gate voltage as compared to a conventional field‐effect transistor. The output current may therefore be controlled both electrically and optically. The underlying mechanism is based on the good charge transport in Ph‐TDPP‐Ph and C₆₀, the intrinsic dissociation properties of C₆₀, and the presence of an injection barrier for holes. In addition to this, it is demonstrated that the observed behavior of the DPP/C₆₀ system allows the realization of basic logic elements like NOT‐, AND‐, and OR‐Gates, which may provide the basis for advanced analog and digital applications.