Control of Structural Distortions in Transition‐Metal Oxide Films through Oxygen Displacement at the Heterointerface

Structural distortions in the oxygen octahedral network in transition‐metal oxides play crucial roles in yielding a broad spectrum of functional properties, and precise control of such distortions is a key for developing future oxide‐based electronics. Here, it is shown that the displacement of apical oxygen atom shared between the octahedra at the heterointerface is a determining parameter for these distortions and consequently for control of structural and electronic phases of a strained oxide film. The present analysis by complementary annular dark‐ and bright‐field imaging in aberration‐corrected scanning transmission electron microscopy reveals that structural phase differences in strained monoclinic and tetragonal SrRuO₃ films grown on GdScO₃ substrates result from relaxation of the octahedral tilt, associated with changes in the in‐plane displacement of the apical oxygen atom at the heterointerface. It is further demonstrated that octahedral distortions and magnetrotransport properties of the SrRuO₃ films can be controlled by interface engineering of the oxygen displacement. This provides a further degree of freedom for manipulating structural and electronic properties in strained films, allowing the design of novel oxide‐based heterostructures.     

Local crystal structural modifications in pulsed laser deposited high-k dielectric thin films on silicon and germanium

The thin film growth conditions are correlated with the local structures formed in Hf_xZr_1−xO₂ (x=0.0–1.0) high-k dielectric thin films on Si and Ge substrates during deposition. Pulsed laser deposition (PLD) technique has been used in the synthesis of the thin films with systematic variations of substrate temperature, Zr content of the targets and substrate selection. The local structural information acquired from extended X-ray absorption spectroscopy (EXAFS) is correlated with the thin film growth conditions. The response of the local structure around Hf and Zr atoms to growth parameters was investigated by EXAFS experiments performed at the National Synchrotron Light Source of Brookhaven National Laboratory. The competing crystal phases of oxides of Hf were identified and the intricate relation between the stabilized phase and the parameters as: the substrate temperature; Hf to Zr ratio; have been revealed. Specifically, HfO₂ thin films on Si(1 0 0) exhibit a tetragonal to monoclinic phase transformation upon increase in the substrate temperature during deposition whereas, HfO₂ PLD films on Ge(1 0 0) substrates remain in tetragonal symmetry regardless of the substrate temperature.     

Crystallization and Microstructure of Yttria‐Stabilized‐Zirconia Thin Films Deposited by Spray Pyrolysis

The crystallization and microstuctural evolution upon thermal treatment of yttria‐stabilized zirconia (YSZ, Zr_0.85Y_0.15O_1‐δ) thin films deposited by spray pyrolysis at 370 °C are investigated. The as‐deposited YSZ films are mainly amorphous with a few crystallites of 3 nm in diameter and crystallize in the temperature range from 400 °C to 900 °C. Fully crystalline YSZ thin films are obtained after heating to 900 °C or by isothermal dwells for at least 17 h at a temperature as low as 600 °C. Three exothermic heat releasing processes with activation energies are assigned to the crystallization and the oxidation of residuals from the precursor. Microporosity develops during crystallization and mass loss. During crystallization the microstrain decreases from 4% to less than 1%. Simultaneously, the average grain size increases from 3 nm to 10 nm. The tetragonal phase content of the YSZ thin film increases with increasing temperature and isothermal dwell time. Based on these data, gentle processing conditions can be designed for zirconia based thin films, which meet the requirements for Si‐based microfabrication of miniaturized electrochemical devices such as micro‐solid oxide fuel cells or sensors.     

Polymer‐Stabilized Chromonic Liquid‐Crystalline Polarizer

Robust coatable polarizer is fabricated by the self‐assembly of lyotropic chromonic liquid crystals and subsequent photo‐polymerizing processes. Their molecular packing structures and optical behaviors are investigated by the combined techniques of microscopy, scattering and spectroscopy. To stabilize the oriented Sunset Yellow FCF (H‐SY) films and to minimize the possible defects generated during and after the coating, acrylic acid (AA) is added to the H‐SY/H₂O solution and photo‐polymerized. Utilizing cross‐polarized optical microscopy, phase behaviors of the H‐SY/H₂O/AA solution are monitored by varying the compositions and temperatures of the solution. Based on the experimental results of two‐dimensional wide angle X‐ray diffraction and selected area electron diffraction, the H‐SY crystalline unit cell is determined to be a monoclinic structure with the dimensions of a = 1.70 nm, b = 1.78 nm, c = 0.68 nm, α = β = 90.0° and γ = 84.5°. The molecular arrangements in the oriented H‐SY films were further confirmed by polarized Fourier‐transform infrared spectroscopy. The polymer‐stabilized H‐SY films show good mechanical and chemical stabilities with a high polarizability. Additionally, patterned polarizers are fabricated by applying a photo‐mask during the photo‐polymerization of AA, which may open new doors for practical applications in electro‐optic devices.     

Interfacial Strain‐Induced Oxygen Disorder as the Cause of Enhanced Critical Current Density in Superconducting Thin Films

To understand the origin of the increase in critical current density of rare earth barium cuprate superconductor thin films with decreasing thickness, a series of sub‐300‐nm EuBa₂Cu₃O_7?δ thin films deposited on SrTiO₃ substrates are studied by X‐ray diffraction and electrical transport measurements. The out‐of‐plane crystallographic mosaic tilt and the out‐of‐plane microstrain both increase with decreasing film thickness. The calculated density of c‐axis threading dislocations matches the extent of the observed low‐field enhancement in critical current density for fields applied parallel to c. The in‐plane mosaic twist and in‐plane microstrain are both around twice the magnitude of the out‐of‐plane values, and both increase with decreasing film thickness. The results are consistent with the observed stronger field enhancement in critical current density for fields applied parallel to ab. The lattice parameter variation with thickness is not as expected from consideration of the biaxial strain with the substrate, indicative of in‐plane microstrain accommodation by oxygen disorder. Collectively, the results point to an enhancement of critical current by interfacial strain induced oxygen disorder which is greatest closest to the film‐substrate interface. The findings of this study have important implications for other thin functional oxide perovskite films and nanostructures where surface and interfacial strains dominate the properties.     

Origin of a Tetragonal BiFeO3 Phase with a Giant c/a Ratio on SrTiO3 Substrates

A tetragonal BiFeO₃ phase with giant c/a of approximately 1.25 has been of great interest recently as it potentially possesses a giant polarization and much enhanced electromechanical response. This super‐tetragonal phase is known to be a stable phase only under high compressive strains of above approximately 4.5%, according to first principle calculations. However, in previous work, this super‐tetragonal BiFeO₃ phase was obtained in films deposited at high growth rate on SrTiO₃ substrates with compressive strain of only around 1.5%. By detailed structure analysis using high resolution synchrotron X‐ray diffraction, atomic force microscopy, and transmission electron microscopy, the parasitic β‐Bi₂O₃ phase is identified as the origin inducing the formation of super‐tetragonal BiFeO₃ phase on SrTiO₃ substrates. In addition, ab initio calculations also confirm that this super‐tetragonal phase is more stable than monoclinic phase when Bi₂O₃ is present. Using Bi₂O₃ as a buffer layer, an alternative route, not involving strain engineering, is proposed to stabilize this promising super‐tetragonal BiFeO₃ phase at low growth rates.     

Single‐Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid‐Phase Epitaxy

Single‐crystalline thin films of the homologous series InGaO₃(ZnO)_m (where m is an integer) are fabricated by the reactive solid‐phase epitaxy (R‐SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High‐temperature annealing of bilayer films consisting of an amorphous InGaO₃(ZnO)₅ layer deposited at room temperature and an epitaxial ZnO layer on yttria‐stabilized zirconia (YSZ) substrate allows for the growth of single‐crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.     

Unusual Strain Accommodation and Conductivity Enhancement by Structure Modulation Variations in Sr4Fe6O12+δ Epitaxial Films

Mixed ionic and electronic conducting (MIEC) films can be applied in solid state electrochemical devices such as oxygen separation membranes for producing pure oxygen, gas sensors or as cathode in solid oxide fuel cells. The current interest in layered perovskite‐related phases, like Sr₄Fe₆O₁₃ (SFO), arises from their significant oxygen permeability as predicted from theoretical studies. Nevertheless, before any practical application further fundamental study on this fairly unknown oxide is required mainly to assess the mechanisms affecting the transport properties. Epitaxial Sr₄Fe₆O_12+δ (SFO) films of b‐axis orientation with different thicknesses have been prepared by the pulsed laser deposition technique onto different perovskite substrates: SrTiO₃, NdGaO₃ and LaAlO₃. The strain accommodation has been found to vary as a function of film thickness as well as the substrate material causing different type of defects in the film microstructure, as well as variations in the oxygen anion content and ordering. Correspondingly, the total electrical conductivity of the films has been also found to vary significantly as a function of thickness and substrate type showing an unexpected enhancement for strained thin films. The variations in the transport properties are discussed in terms of the different strain accommodation mechanisms and the variation of the modulated structure observed for this compound.     

Unveiling the Nanoparticle‐Seeded Catalytic Nucleation Kinetics of Perovskite Solar Cells by Time‐Resolved GIXS

Recently, a new seeding growth approach for perovskite thin films is reported to significantly enhance the device performance of perovskite solar cells. This work unveils the intermediate structures and the corresponding growth kinetics during conversion to perovskite crystal thin films assisted by seeding PbS nanocrystals (NCs), using time‐resolved grazing‐incidence X‐ray scattering. Through analyses of time‐resolved crystal formation kinetics obtained from synchrotron X‐rays with a fast subsecond probing time resolution, an important “catalytic” role of the seed‐like PbS NCs is clearly elucidated. The perovskite precursor‐capped PbS NCs are found to not only accelerate the nucleation of a highly oriented intermediate phase, but also catalyze the conversion of the intermediate phase into perovskite crystals with a reduced activation energy E_a = 47 (±5) kJ mol^?1, compared to 145 (±38) kJ mol^?1 for the pristine perovskite thin film. The reduced E_a is attributed to a designated crystal lattice alignment of the perovskite nanocrystals with perovskite cubic crystals; the pivotal heterointerface alignment of the perovskite crystals coordinated by the Pb NCs leads to an improved film surface morphology with less pinholes and enhanced crystal texture and thermal stability. These together contribute to the significantly improved photovoltaic performance of the corresponding devices.     

Influence of Substrate Temperature on Structural and Thermoelectric Properties of Antimony Telluride Thin Films Fabricated by RF and DC Cosputtering

Antimony and tellurium were deposited on BK7 glass using direct-current magnetron and radiofrequency magnetron cosputtering. Antimony telluride thermoelectric thin films were synthesized with a heated substrate. The effects of substrate temperature on the structure, surface morphology, and thermoelectric properties of the thin films were investigated. X-ray diffraction patterns revealed that the thin films were well crystallized. c-Axis preferred orientation was observed in thin films deposited above 250°C. Scanning electron microscopy images showed hexagonal crystallites and crystal grains of around 500 nm in thin film fabricated at 250°C. Energy-dispersive spectroscopy indicated that a temperature of 250°C resulted in stoichiometric Sb₂Te₃. Sb₂Te₃ thin film deposited at room temperature exhibited the maximum Seebeck coefficient of 190 μV/K and the lowest power factor (PF), S ² σ, of 8.75 × 10⁻⁵ W/mK². When the substrate temperature was 250°C, the PF increased to its highest value of 3.26 × 10⁻³ W/mK². The electrical conductivity and Seebeck coefficient of the thin film were 2.66 × 10⁵ S/m and 113 μV/K, respectively.     

Low‐Symmetry Monoclinic Phases and Polarization Rotation Path Mediated by Epitaxial Strain in Multiferroic BiFeO3 Thin Films

A morphotropic phase boundary driven by epitaxial strain has been observed in lead‐free multiferroic BiFeO₃ thin films and the strain‐driven phase transitions have been widely reported as iso‐symmetric Cc‐Cc by recent works. In this paper, it is suggested that the tetragonal‐like BiFeO₃ phase identified in epitaxial films on (001) LaAlO₃ single crystal substrates is monoclinic M_C. This M_C phase is different from the M_A type monoclinic phase reported in BiFeO₃ films grown on low mismatch substrates, such as SrTiO₃. This is confirmed not only by synchrotron X‐ray studies but also by piezoresponse force microscopy measurements. The polarization vectors of the tetragonal‐like phase lie in the (100) plane, not the (11 0) plane as previously reported. A phenomenological analysis is proposed to explain the formation of M_C Phase. Such a low‐symmetry M_C phase, with its linkage to M_A phase and the multiphase coexistence open an avenue for large piezoelectric response in BiFeO₃ films and shed light on a complete understanding of possible polarization rotation paths and enhanced multiferroicity in BiFeO₃ films mediated by epitaxial strain. This work may also aid the understanding of developing new lead‐free strain‐driven morphotropic phase boundary in other ferroic systems.     

Optimized La0.6Sr0.4CoO3–δ Thin‐Film Electrodes with Extremely Fast Oxygen‐Reduction Kinetics

La_0.6Sr_0.4CoO_3–δ (LSC) thin‐film electrodes are prepared on yttria‐stabilized zirconia (YSZ) substrates by pulsed laser deposition at different deposition temperatures. The decrease of the film crystallinity, occurring when the deposition temperature is lowered, is accompanied by a strong increase of the electrochemical oxygen exchange rate of LSC. For more or less X‐ray diffraction (XRD)‐amorphous electrodes deposited between ca. 340 and 510 °C polarization resistances as low as 0.1 Ω cm² can be obtained at 600 °C. Such films also exhibit the best stability of the polarization resistance while electrodes deposited at higher temperatures show a strong and fast degradation of the electrochemical kinetics (thermal deactivation). Possible reasons for this behavior and consequences with respect to the preparation of high‐performance solid oxide fuel cell (SOFC) cathodes are discussed.     

Neutron Diffraction Investigations of Magnetism in BiFeO3 Epitaxial Films

The recovery of a modulated magnetic structure in epitaxial BiFeO₃ thin films as revealed by neutron diffraction is reported. The magnetic structure in thin films is found to strongly depend on substrate orientation. The substrate orientation causes different strain–relaxation processes resulting in different thin‐film crystal structures. The (110) oriented film with a monoclinic structural phase has a single‐domain modulated magnetic structure where the magnetic moment lies in the HHL plane. For the (111) oriented film that has a rhombohedral structure, a modulated structure superimposed on the G‐type antiferromagnetic order is found. These results indicate that slight structural modifications in the BiFeO₃ thin film cause drastic changes in the magnetic structure.     

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO_x) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO_x thin film exhibits a low‐leakage current density of 0.2 nA cm^?2 at 2 MV cm^?1, a large areal capacitance of 460 nF cm^?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScO_x TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm² V^?1 s^?1, a large current ratio (I_on/I_off) of 2.7 × 10⁷ and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScO_x TFTs exhibit a large I_on/I_off of around 10⁵ and a hole mobility of 0.8 cm² V^?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.     

Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Recent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (E_g = 3·6–3·8 eV) than the conventional buffer material CdS (E_g = 2·4 eV) currently used in chalcopyrite‐based thin films solar cells. Thus, Zn(S,O) is a potential alternative buffer material, which already results in Cd‐free solar cell devices with increased spectral response in the blue wavelength region if low‐gap chalcopyrites are used. Suitable conditions for reproducible deposition of good‐quality Zn(S,O) thin films on wide‐gap CuInS₂ (‘CIS’) absorbers have been identified for an alternative, low‐temperature chemical route. The thickness of the different Zn(S,O) buffers and the coverage of the CIS absorber by those layers as well as their surface composition were controlled by scanning electron microscopy, X‐ray photoelectron spectroscopy, and X‐ray excited Auger electron spectroscopy. The minimum thickness required for a complete coverage of the rough CIS absorber by a Zn(S,O) layer deposited by this CBD process was estimated to ∼15 nm. The high transparency of this Zn(S,O) buffer layer in the short‐wavelength region leads to an increase of ∼1 mA/cm² in the short‐circuit current density of corresponding CIS‐based solar cells. Active area efficiencies exceeding 11·0% (total area: 10·4%) have been achieved for the first time, with an open circuit voltage of 700·4 mV, a fill factor of 65·8% and a short‐circuit current density of 24·5 mA/cm² (total area: 22·5 mA/cm²). These results are comparable to the performance of CdS buffered reference cells. First integrated series interconnected mini‐modules on 5 × 5 cm² substrates have been prepared and already reach an efficiency (active area: 17·2 cm²) of above 8%. Copyright © 2006 John Wiley & Sons, Ltd.     

High‐Performance Organic Heterojunction Phototransistors Based on Highly Ordered Copper Phthalocyanine/para‐Sexiphenyl Thin Films

High‐performance organic heterojunction phototransistors are fabricated using highly ordered copper phthalocyanine (CuPc) and para ‐sexiphenyl (p ‐6P) thin films. The p ‐6P thin film plays an important role on the performance of CuPc/p ‐6P heterojunction phototransistors. It acts as a molecular template layer to induce the growth of highly ordered CuPc thin film, which dramatically improves the charge transport and decreases the grain boundaries. On the other hand, the p ‐6P thin film can form an effective heterojunction with CuPc thin film, which is greatly helpful to enhance the light absorption and photogenerated carriers. Under 365 nm ultraviolet light irradiation, the ratio of photocurrent and dark current and photoresponsivity of CuPc/p ‐6P heterojunction phototransistors reaches to about 2.2 × 10⁴ and 4.3 × 10² A W^?1, respectively, which are much larger than that of CuPc phototransistors of about 2.7 × 10² and 7.3 A W^?1, respectively. A detailed study carried out with current sensing atomic force microscopy proves that the photocurrent is predominately produced inside the highly ordered CuPc/p ‐6P heterojunction grains, while the photocurrent produced at the boundaries between grains can be neglected. The research provides a good method for fabricating high‐performance organic phototransistors using a combination of molecular template growth and organic heterojunction.     

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

Heteroepitaxial ZnO films are successfully grown on nondoped GaN‐buffered Al₂O₃ (0001) substrates in water at 90 °C using a two‐step process. In the first step, a discontinuous ZnO thin film (ca. 200 nm in thickness) consisting of hexagonal ZnO crystallites is grown in a solution containing Zn(NO₃)·6 H₂O and NH₄NO₃ at ca. pH 7.5 for 24 h. In the second step, a dense and continuous ZnO film (ca. 2.5 μm) is grown on the first ZnO thin film in a solution containing Zn(NO₃)·6 H₂O and sodium citrate at ca. pH 10.9 for 8 h. Scanning electron microscopy, X‐ray diffraction, UV‐vis absorption spectroscopy, photoluminescence spectroscopy, and Hall‐effect measurement are used to investigate the structural, optical, and electrical properties of the ZnO films. X‐ray diffraction analysis shows that ZnO is a monocrystalline wurtzite structure with an epitaxial orientation relationship of (0001)[11 0]_ZnO∥(0001)[11 0]_GaN. Optical transmission spectroscopy of the two‐step grown ZnO film shows a bandgap energy of 3.26 eV at room temperature. A room‐temperature photoluminescence spectrum of the ZnO film reveals only a main peak at ca. 380 nm without any significant defect‐related deep‐level emissions. The electrical property of ZnO film showed n‐type behavior with a carrier concentration of 3.5 × 10¹⁸ cm^–3 and a mobility of 10.3 cm² V^–1 s^–1.     

Ferroelectric Self‐Poling,Switching, and Monoclinic Domain Configuration in BiFeO3 Thin Films

Self‐poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as‐grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO₃, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self‐poling. This study investigates the effect of self‐poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO₃ (R′ and T′) in thin films grown on LaAlO₃ substrates with slightly different La_0.3Sr_0.7MnO₃ buffer layers. This study shows that the polarization state formed during the growth acts as “imprint” on the polarization and that switching the polarization away from this self‐poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T_c). Switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains.     

Epitaxy on Demand

Perovskite oxide heteroepitaxy is realized on the top of inorganic nanosheets that are covering the amorphous oxide surfaces of Si substrates. Utilizing pulsed laser deposition, thin films of SrRuO₃ in a (001)_pc and (110)_pc orientation on nanosheets of Ca₂Nb₃O₁₀ and Ti_0.87O₂ are grown, respectively. The two types of nanosheets are patterned to locally tailor the crystallographic orientation and properties of SrRuO₃. The success of our approach is demonstrated by electron backscatter diffraction and spatial magnetization maps. An unprecedented control of perovskite film growth on arbitrary substrates is illustrated in this work, and the methods that are developed to deposit SrRuO₃ thin films are a viable starting point for growth of artificial heteroepitaxial thin films that require a bottom electrode. Control is not just reached in the direction of film growth, as the crystal orientation and film properties are regulated laterally on the surface of micropatterned nanosheets. Local control of magnetic properties is illustrated, which holds out prospects for the fabrication of next‐generation devices like noncollinear magnetic random access memories.     

Network Structure Modification‐Enabled Hybrid Polymer Dielectric Film with Zirconia for the Stretchable Transistor Applications

Stretchable electronic devices should be enabled by the smart design of materials and architectures because their commercialization is limited by the tradeoff between stretchability and electrical performance limits. In this study, thin‐film transistors are fabricated using strategies that combine the unit process of a novel hybrid gate insulator and low‐temperature indium gallium tin oxide (IGTO) channel layer and a stress‐relief substrate structure. Novel hybrid dielectric films are synthesized and their molecular structural configurations are analyzed. These films consist of a polymer [poly(4‐vinylphenol‐co‐methylmethacrylate)], cross‐linkers having different binding structures [1,6‐bis(trimethoxysilyl)hexane (BTMSH), dodecyltrimethoxysilane, and poly(melamine‐co‐formaldehyde)], and an inorganic zirconia component (ZrO_x). The hybrid film with BTMSH cross‐linker and 0.2 M ZrO_x exhibits excellent insulating properties as well as mechanical stretchability. IGTO transistors fabricated on polyimide‐coated glass substrates are transferred to the rubber substrate to offer stretchability of the transistor pixelated thin‐film transistors. IGTO transistors fabricated on stretchable substrates using these strategies show promising electrical performance and mechanical durability. After 200 stretchability test cycles under uniaxial elongation of approximately 300%, the IGTO transistor still retains a high carrier mobility of 21.7 cm² V^?1 s^?1, a low sub‐threshold gate swing of 0.68 V decade^?1 and a high I_ON/OFF ratio of 2.0 × 10⁷.