16‐QAM‐Based Highly Spectral‐Efficient E‐band Communication System with Bit Rate up to 10 Gbps

This paper presents a novel 16‐quadrature‐amplitude‐modulation (QAM) E‐band communication system. The system can deliver 10 Gbps through eight channels with a bandwidth of 5 GHz (71‐76 GHz/81‐86 GHz). Each channel occupies 390 MHz and delivers 1.25 Gbps using a 16‐QAM. Thus, this system can achieve a bandwidth efficiency of 3.2 bit/s/Hz. To implement the system, a driver amplifier and an RF up‐/down‐conversion mixer are implemented using a 0.1 µm gallium arsenide pseudomorphic high‐electron‐mobility transistor (GaAs pHEMT) process. A single‐IF architecture is chosen for the RF receiver. In the digital modem, 24 square root raised cosine filters and four (255, 239) Reed‐Solomon forward error correction codecs are used in parallel. The modem can compensate for a carrier‐frequency offset of up to 50 ppm and a symbol rate offset of up to 1 ppm. Experiment results show that the system can achieve a bit error rate of 10^?5 at a signal‐to‐noise ratio of about 21.5 dB.     

16‐QAM OFDM‐Based K‐Band LoS MIMO Communication System with Alignment Mismatch Compensation

This paper presents a novel K‐band (18 GHz) 16‐quadrature amplitude modulation (16‐QAM) orthogonal frequency‐division multiplexing (OFDM)‐based 2 × 2 line‐of‐sight multi‐input multi‐output communication system. The system can deliver 356 Mbps on a 56 MHz channel. Alignment mismatches, such as amplitude and/or phase mismatches, between the transmitter and receiver antennas were examined through hardware experiments. Hardware experimental results revealed that amplitude mismatch is related to antenna size, antenna beam width, and link distance. The proposed system employs an alignment mismatch compensation method. The open‐loop architecture of the proposed compensation method is simple and enables facile construction of communication systems. In a digital modem, 16‐QAM OFDM with a 512‐point fast Fourier transform and (255, 239) Reed‐Solomon forward error correction codecs is used. Experimental results show that a bit error rate of 10^?5 is achieved at a signal‐to‐noise ratio of approximately 18.0 dB.     

OFDM‐Based STBC with Low End‐to‐End Delay for Full‐Duplex Asynchronous Cooperative Systems

We propose a new space‐time block coding (STBC) for asynchronous cooperative systems in full‐duplex mode. The orthogonal frequency division multiplexing (OFDM) transmission technique is used to combat the timing errors from the relay nodes. At the relay nodes, only one OFDM time slot is required to delay for a pair‐wise symbol swap operation. The decoding complexity is lower for this new STBC than for the traditional quasi‐orthogonal STBC. Simulation results show that the proposed scheme achieves excellent performances.     

Organic Electronics: High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′‐Ditridecyl Perylene Diimide Based Field‐Effect Transistors: Improving Performance and Stability with Thermal Treatment (Adv. Funct. Mater. 16/2010)

A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N,N′‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO₂ gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO₂ gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm² V^?1 s^?1 in the 20 V saturation regime and long‐term stability with respect to H₂O/O₂ degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.