All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride–trifluoroethylene (P(VDF‐TrFE)) and n‐type semiconducting [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF‐TrFE) matrix. Highly conducting poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (R_rms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high I_on/I_off ratios (≈3 × 10³), low read voltages (≈5 V), excellent dielectric response at high frequencies (?_r ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s.     

High‐Mobility Air‐Stable Naphthalene Diimide‐Based Copolymer Containing Extended π‐Conjugation for n‐Channel Organic Field Effect Transistors

A high‐performance naphthalene diimide (NDI)‐based conjugated polymer for use as the active layer of n‐channel organic field‐effect transistors (OFETs) is reported. The solution‐processable n‐channel polymer is systematically designed and synthesized with an alternating structure of long alkyl substituted‐NDI and thienylene–vinylene–thienylene units (PNDI‐TVT). The material has a well‐controlled molecular structure with an extended π‐conjugated backbone, with no increase in the LUMO level, achieving a high mobility and highly ambient stable n‐type OFET. The top‐gate, bottom‐contact device shows remarkably high electron charge‐carrier mobility of up to 1.8 cm² V^?1 s^?1 (I_on/I_off = 10⁶) with the commonly used polymer dielectric, poly(methyl methacrylate) (PMMA). Moreover, PNDI‐TVT OFETs exhibit excellent air and operation stability. Such high device performance is attributed to improved π–π intermolecular interactions owing to the extended π‐conjugation, apart from the improved crystallinity and highly interdigitated lamellar structure caused by the extended π–π backbone and long alkyl groups.     

Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory

Organic field‐effect transistor (FET) memory is an emerging technology with the potential to realize light‐weight, low‐cost, flexible charge storage media. Here, solution‐processed poly[9,9‐dioctylfluorenyl‐2,7‐diyl]‐co‐(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top‐gate/bottom‐contact device configuration is reported. A reversible shift in the threshold voltage (V_Th) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross‐linked poly(4‐vinylphenol). The F8T2 NFGM showed relatively high field‐effect mobility (µ_FET) (0.02 cm² V^?1 s^?1) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10⁴) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top‐gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.     

Organic Thin‐Film Transistors Based on Tolyl‐Substituted Oligothiophenes

Thin films based on the tolyl‐substituted oligothiophenes 5,5′′‐bis(4‐methylphenyl)‐2,2′:5′,2′′‐terthiophene ( 1 ), 5,5′′′‐bis(4‐methylphenyl)‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene ( 2 ) and 5,5′′′′‐bis(4‐methylphenyl)‐2,2′:5′,2′′:5′′,2′′′:5′′′,2′′′′‐quinqethiophene ( 3 ) exhibit hole‐transport behavior in a thin‐film transistor (TFT) configuration, with reasonable mobilities and high current on/off (I_on/I_off) ratios. Powder X‐ray diffraction (PXRD) reveals that these films, grown by vacuum deposition onto the thermally grown silicon oxide surface of a TFT, are highly crystalline, a characteristic that can be attributed to the general tendency of phenyl groups to promote crystallinity. Atomic force microscopy (AFM) reveals that the films grow layer by layer to form large domains, with some basal domain areas approaching 1000 μm². The PXRD and AFM data are consistent with an “end‐on” orientation of the molecules on the oxide substrate. Variable‐temperature current–voltage (I–V) measurements identified the activation regime for hole transport and revealed shallow level traps in thin films of 1 and 2 , and both shallow and deep level traps in thin films of 3 . The activation energies for thin films of 1 , 2 , and 3 were similar, with values of E_a = 121, 100, and 109 meV, respectively. The corresponding trap densities were N_trap/N_v = 0.012, 0.023, and 0.094, where N_trap is the number of trap states and N_v is the number of conduction states. The hole mobilities for the three compounds were similar (μ ? 0.03 cm² V^–1 s^–1), and the I_on/I_off ratios were comparable with the highest values reported for organic TFTs, with films of 2 approaching I_on/I_off = 10⁹ at room temperature.     

Effects of Arylene Diimide Thin Film Growth Conditions on n‐Channel OFET Performance

A series of eight perylene diimide (PDI)‐ and naphthalene diimide (NDI)‐based organic semiconductors was used to fabricate organic field‐effect transistors (OFETs) on bare SiO₂ substrates, with the substrate temperature during film deposition (T_d) varied from 70–130 °C. For the N,N′‐n‐octyl materials that form highly ordered films, the mobility (µ) and current on‐off ratio (I_on/I_off) increase slightly from 70 to 90 °C, and remain relatively constant between 90 and 130 °C. I_on/I_off and µ of dibromo‐PDI‐based OFETs decrease with increasing T_d, while films of N,N′‐1H,1H‐perfluorobutyl dicyanoperylenediimide (PDI‐FCN₂) exhibit dramatic I_on/I_off and µ enhancements with increasing T_d. Increased OFET mobility can be correlated with higher levels of molecular ordering and minimization of film morphology surface irregularities. Additionally, the effects of SiO₂ surface modification with trimethylsilyl and octadecyltrichlorosilyl monolayers, as well as with polystyrene, are investigated for N,N′‐n‐octyl dicyanoperylenediimide (PDI‐8CN₂) and PDI‐FCN₂ films deposited at T_d = 130 °C. The SiO₂ surface treatments have modest effects on PDI‐8CN₂ OFET mobilities, but modulate the mobility and morphology of PDI‐FCN₂ films substantially. Most importantly, the surface treatments result in substantially increased V_th and decreased I_off values for the dicyanoperylenediimide films relative to those grown on SiO₂, resulting in V_th > 0.0 V and I_on/I_off ratios as high as 10⁸. Enhancements in current modulation for these high‐mobility, air‐stable, and solution‐processable n‐type semiconductors, should prove useful in noise‐margin enhancement and further improvements in organic electronics.     

Competitive Absorption and Inefficient Exciton Harvesting: Lessons Learned from Bulk Heterojunction Organic Photovoltaics Utilizing the Polymer Acceptor P(NDI2OD‐T2)

Organic solar cells utilizing the small molecule donor 7,7′‐(4,4‐bis(2‐ethylhexyl)‐4H‐silolo[3,2‐b:4,5‐b′]dithiophene‐2,6‐diyl)bis(6‐fluoro‐4‐(5′‐hexyl‐[2,2′‐bithiophen]‐5‐yl)benzo[c][1,2,5] thiadiazole) (p‐DTS(FBTTh₂)₂ and the polymer acceptor poly{[N,N′‐bis(2‐octyldodecyl)‐1,4,5,8‐naphthalenedicarboximide‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)}(P(NDI2OD‐T2)) are investigated and a power conversion efficiency of 2.1% is achieved. By systematic study of bulk heterojunction (BHJ) organic photovoltaic (OPV) quantum efficiency, film morphology, charge transport and extraction and exciton diffusion, the loss processes in this blend is revealed compared to the blend of [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) and the same donor. An exciton diffussion study using Förster resonant energy transfer (FRET) shows the upper limit of the P(NDI2OD‐T2) exciton diffusion length to be only 1.1 nm. The extremely low exciton diffusion length of P(NDI2OD‐T2), in combination with the overlap in donor and acceptor absorption, is then found to significantly limit device performance. These results suggest that BHJ OPV devices utilizing P(NDI2OD‐T2) as an acceptor material will likely be limited by its low exciton diffusion length compared to devices utilizing functionalized fullerene acceptors, especially when P(NDI2OD‐T2) significantly competes with the donor molecule for photon absorption.     

Low‐Power Nonvolatile Charge Storage Memory Based on MoS2 and an Ultrathin Polymer Tunneling Dielectric

Low‐power, nonvolatile memory is an essential electronic component to store and process the unprecedented data flood arising from the oncoming Internet of Things era. Molybdenum disulfide (MoS₂) is a 2D material that is increasingly regarded as a promising semiconductor material in electronic device applications because of its unique physical characteristics. However, dielectric formation of an ultrathin low‐k tunneling on the dangling bond‐free surface of MoS₂ is a challenging task. Here, MoS₂‐based low‐power nonvolatile charge storage memory devices are reported with a poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) tunneling dielectric layer formed via a solvent‐free initiated chemical vapor deposition (iCVD) process. The surface‐growing polymerization and low‐temperature nature of the iCVD process enable the conformal growing of low‐k (≈2.2) pV3D3 insulating films on MoS₂. The fabricated memory devices exhibit a tunable memory window with high on/off ratio (≈10⁶), excellent retention times of 10⁵ s with an extrapolated time of possibly years, and an excellent cycling endurance of more than 10³ cycles, which are much higher than those reported previously for MoS₂‐based memory devices. By leveraging the inherent flexibility of both MoS₂ and polymer dielectric films, this research presents an important milestone in the development of low‐power flexible nonvolatile memory devices.     

Kinetically Controlled Crystallization in Conjugated Polymer Films for High‐Performance Organic Field‐Effect Transistors

Ordering of semiconducting polymers in thin films from the nano to microscale is strongly correlated with charge transport properties as well as organic field‐effect transistor performance. This paper reports a method to control nano to microscale ordering of poly{[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (P(NDI2OD‐T2)) thin films by precisely regulating the solidification rate from the metastable state just before crystallization. The proposed simple but effective approach, kinetically controlled crystallization, achieves optimized P(NDI2OD‐T2) films with large polymer domains, long range ordered fibrillar structures, and molecular orientation preferable for electron transport leading to dramatic morphological changes in both polymer domain sizes at the micrometer scale and molecular packing structures at nanoscales. Structural changes significantly increase electron mobilities up to 3.43 ± 0.39 cm² V^?1 s^?1 with high reliability, almost two orders of enhancement compared with devices from naturally dried films. Small contact resistance is also obtained for electron injection (0.13 MΩ cm), low activation energy (62.51 meV), and narrow density of states distribution for electron transport in optimized thin films. It is believed that this study offers important insight into the crystallization of conjugated polymers that can be broadly applied to optimize the morphology of semiconducting polymer films for solution processed organic electronic devices.     

ε‐Branched Flexible Side Chain Substituted Diketopyrrolopyrrole‐Containing Polymers Designed for High Hole and Electron Mobilities

Based on the integrated consideration and engineering of both conjugated backbones and flexible side chains, solution‐processable polymeric semiconductors consisting of a diketopyrrolopyrrole (DPP) backbone and a finely modulated branching side chain (ε‐branched chain) are reported. The subtle change in the branching point from the backbone alters the π?π stacking and the lamellar distances between polymer backbones, which has a significant influence on the charge‐transport properties and in turn the performances of field‐effect transistors (FETs). In addition to their excellent electron mobilities (up to 2.25 cm² V^?1 s^?1), ultra‐high hole mobilities (up to 12.25 cm² V^?1 s^?1) with an on/off ratio (I_on/I_off) of at least 10⁶ are achieved in the FETs fabricated using the polymers. The developed polymers exhibit extraordinarily high electrical performance with both hole and electron mobilities superior to that of unipolar amorphous silicon.     

Single‐Crystalline p‐Type Zn3As2 Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates

Zn₃As₂ is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn₃As₂ nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn₃As₂ NW field‐effect transistors (FETs) on rigid SiO₂/Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm² V^?1 s^?1) and a high I_on/I_off ratio (10⁵). Single‐NW photodetectors on SiO₂/Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn₃As₂ NW arrays are successfully assembled on SiO₂/Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO₂/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn₃As₂ NWs have important applications in future electronic and optoelectronic devices.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.     

Novel Heteroleptic CuI Complexes with Tunable Emission Color for Efficient Phosphorescent Light‐Emitting Diodes

A series of orange‐red to red phosphorescent heteroleptic Cu^I complexes (the first ligand: 2,2′‐biquinoline (bq), 4,4′‐diphenyl‐2,2′‐biquinoline (dpbq) or 3,3′‐methylen‐4,4′‐diphenyl‐2,2′‐biquinoline (mdpbq); the second ligand: triphenylphosphine or bis[2‐(diphenylphosphino)phenyl]ether (DPEphos)) have been synthesized and fully characterized. With highly rigid bulky biquinoline‐type ligands, complexes [Cu(mdpbq)(PPh₃)₂](BF₄) and [Cu(mdpbq)(DPEphos)](BF₄) emit efficiently in 20 wt % PMMA films with photoluminescence quantum yield of 0.56 and 0.43 and emission maximum of 606 nm and 617 nm, respectively. By doping these complexes in poly(vinyl carbazole) (PVK) or N‐(4‐(carbazol‐9‐yl)phenyl)‐3,6‐bis(carbazol‐9‐yl) carbazole (TCCz), phosphorescent organic light‐emitting diodes (OLEDs) were fabricated with various device structures. The complex [Cu(mdpbq)(DPEphos)](BF₄) exhibits the best device performance. With the device structure of ITO/PEDOT/TCCz:[Cu(mdpbq)(DPEphos)](BF₄) (15 wt %)/TPBI/LiF/Al (III), a current efficiency up to 6.4 cd A^–1 with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.61, 0.39) has been realized. To our best knowledge, this is the first report of efficient mononuclear Cu^I complexes with red emission.     

A High‐k Fluorinated P(VDF‐TrFE)‐g‐PMMA Gate Dielectric for High‐Performance Flexible Field‐Effect Transistors

A newly synthesized high‐k polymeric insulator for use as gate dielectric layer for organic field‐effect transistors (OFETs) obtained by grafting poly(methyl methacrylate) (PMMA) in poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) via atom transfer radical polymerization transfer is reported. This material design concept intents to tune the electrical properties of the gate insulating layer (capacitance, leakage current, breakdown voltage, and operational stability) of the high‐k fluorinated polymer dielectric without a large increase in operating voltage by incorporating an amorphous PMMA as an insulator. By controlling the grafted PMMA percentage, an optimized P(VDF‐TrFE)‐g‐PMMA with 7 mol% grafted PMMA showing reasonably high capacitance (23–30 nF cm^?2) with low voltage operation and negligible current hysteresis is achieved. High‐performance low‐voltage‐operated top‐gate/bottom‐contact OFETs with widely used high mobility polymer semiconductors, poly[[2,5‐bis(2‐octyldodecyl)‐2,3,5,6‐tetrahydro‐3,6‐dioxopyrrolo [3,4‐c]pyrrole‐1,4‐diyl]‐alt‐[[2,2′‐(2,5‐thiophene)bis‐thieno(3,2‐b)thiophene]‐5,5′‐diyl]] (DPPT‐TT), and poly([N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)) are demonstrated here. DPPT‐TT OFETs with P(VDF‐TrFE)‐g‐PMMA gate dielectrics exhibit a reasonably high field‐effect mobility of over 1 cm² V^?1 s^?1 with excellent operational stability.     

Self‐Assembled Nanowires of Organic n‐Type Semiconductor for Nonvolatile Transistor Memory Devices

Organic nonvolatile transistor‐type memory (ONVM) devices are developed using self‐assembled nanowires of n‐type semiconductor, N,N′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide (BPE‐PTCDI). The effects of nanowire dimension and silane surface treatment on the memory characteristics are explored. The diameter of the nanowires is reduced by increasing the non‐solvent methanol composition, which led to the enhanced crystallinity and high field‐effect mobility. The BPE‐PTCDI nanowires with small diameters induce high electrical fields and result in a large memory window (the shifting of the threshold voltage, ΔV_th). The ΔV_th value of BPE‐PTCDI nanowire based ONVM device on the bare substrate can reach 51 V, which is significantly larger than that of thin film. The memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 10⁴ and the long retention time (10⁴ s), using a hydrophobic surface (such as trichloro(phenyl)silane‐treated surface). The above results demonstrate that the n‐type semiconducting nanowires have potential applications in high performance non‐volatile transistor memory devices.     

Tough,Semiconducting Polyethylene‐poly(3‐hexylthiophene) Diblock Copolymers

Semiconducting diblock copolymers of polyethylene (PE) and regioregular poly(3‐hexylthiophene) (P3HT) are demonstrated to exhibit a rich phase behaviour, judicious use of which permitted us to fabricate field‐effect transistors that show saturated charge carrier mobilities, μ_FET, as high as 2 × 10^–2 cm² V^–1 s^–1 and ON‐OFF ratios, I_on/I_off ～ 10⁵ at contents of the insulating PE moiety as high as 90 wt %. In addition, the diblock copolymers display outstanding flexibility and toughness with elongations at break exceeding 600 % and true tensile strengths around 70 MPa, opening the path towards robust and truly flexible electronic components.     

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films based on high dielectric constant (k) materials have been extensively studied for use in low‐cost and high‐performance thin‐film transistors (TFTs). Here, scandium oxide (ScO_x) is fabricated as a TFT dielectric with excellent electrical properties using a novel water‐inducement method. The thin films are annealed at various temperatures and characterized by using X‐ray diffraction, atomic‐force microscopy, X‐ray photoelectron spectroscopy, optical spectroscopy, and a series of electrical measurements. The optimized ScO_x thin film exhibits a low‐leakage current density of 0.2 nA cm^?2 at 2 MV cm^?1, a large areal capacitance of 460 nF cm^?2 at 20 Hz and a permittivity of 12.1. To verify the possible applications of ScO_x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, they were integrated in both n‐type InZnO (IZO) and p‐type CuO TFTs for testing. The water‐induced full oxide IZO/ScO_x TFTs exhibit an excellent performance, including a high electron mobility of 27.7 cm² V^?1 s^?1, a large current ratio (I_on/I_off) of 2.7 × 10⁷ and high stability. Moreover, as far as we know it is the first time that solution‐processed p‐type oxide TFTs based on a high‐k dielectric are achieved. The as‐fabricated p‐type CuO/ScO_x TFTs exhibit a large I_on/I_off of around 10⁵ and a hole mobility of 0.8 cm² V^?1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution‐processed p‐type TFTs, which represents a great step towards the achievement of low‐cost, all‐oxide, and low‐power consumption CMOS logics.     

Doping Dependent In‐Plane and Cross‐Plane Thermoelectric Performance of Thin n‐Type Polymer P(NDI2OD‐T2) Films

Thermoelectric generators pose a promising approach in renewable energies as they can convert waste heat into electricity. In order to build high efficiency devices, suitable thermoelectric materials, both n‐ and p‐type, are needed. Here, the n‐type high‐mobility polymer poly[N,N′‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) (P(NDI2OD‐T2)) is focused upon. Via solution doping with 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)‐N,N‐diphenylaniline (N‐DPBI), a maximum power factor of (1.84 ± 0.13) µW K^?2 m^?1 is achieved in an in‐plane geometry for 5 wt% dopant concentration. Additionally, UV–vis spectroscopy and grazing‐incidence wide‐angle X‐ray scattering are applied to elucidate the mechanisms of the doping process and to explain the discrepancy in thermoelectric performance depending on the charge carriers being either transported in‐plane or cross‐plane. Morphological changes are found such that the crystallites, built‐up by extended polymer chains interacting via lamellar and π–π stacking, re‐arrange from face‐ to edge‐on orientation upon doping. At high doping concentrations, dopant molecules disturb the crystallinity of the polymer, hindering charge transport and leading to a decreased power factor at high dopant concentrations. These observations explain why an intermediate doping concentration of N‐DPBI leads to an optimized thermoelectric performance of P(NDI2OD‐T2) in an in‐plane geometry as compared to the cross‐plane case.     

Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers

A novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3‐hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self‐assembled monolayer (SAM) of para‐substituted amino (Au‐NH₂), methyl (Au‐CH₃) or trifluoromethyl (Au‐CF₃) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of ±5 V, the hybrid nanofiber transistor memories exhibit a 3.5–10.6 V threshold voltage shifting and at least 10⁴ s data retention, with a minimum effect on ≈100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au‐NH₂ > Au‐CH₃ > Au‐CF₃. The devices remain reliable and stable even under the bending conditions (radius: 5–30 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high‐performance digital nanoscale memories for flexible high density data storage devices.     

High‐Performance Electrofluorochromic Devices Based on Electrochromism and Photoluminescence‐Active Novel Poly(4‐Cyanotriphenylamine)

A novel electrochromism (EC) and photoluminescence (PL)‐active poly(4‐cyanotriphenylamine) ( CN‐PTPA ) is prepared by oxidative coupling polymerization from 4‐cyanotriphenylamine (CN‐TPA) using FeCl₃ as an oxidant. The high‐performance electrofluorochromic (EFC) devices using CN‐PTPA thin film with photoluminescent quantum yield of 21.9% as active layer are readily fabricated and reveal the highest fluorescent contrast ratio (I _off/I _on) of 242 between the fluorescent (neutral) state and the non‐fluorescent (oxidized) state, rapid response time shorter than 0.4 s, and excellent EFC stability longer than 9000 s. Furthermore, by introducing viologen into electrolyte as a counter EC layer for charge balance, the resulting EFC device exhibits notable improvement in reducing oxidation potential (from 2.30 V to 1.55 V) and switching recovery time (from 78 to 38 s) with enhanced fluorescent contrast ratio during pulse on/off multi‐cyclic scanning. These results demonstrate that incorporation of the EC and PL‐active CN‐PTPA is a facile and feasible approach to prepare highly efficient EFC devices.     

Site‐Specific Placement of Au Nanoparticles on Chemical Nanopatterns Prepared by Molecular Transfer Printing Using Block‐Copolymer Films

Inexpensive, large area patterning of ex‐situ synthesized metallic nanoparticles (NPs) at the nanoscale may enable many technologies including plasmonics, nanowire growth, and catalysis. Here, site‐specific localization of Au NPs onto nanoscale chemical patterns of polymer brushes is investigated. In this approach, patterns of hydroxyl‐terminated poly(styrene) brushes are transferred from poly(styrene‐block‐methyl methacrylate) (PS‐b‐PMMA) block copolymer films onto a replica substrate via molecular transfer printing, and the remaining areas are filled with hydroxyl‐terminated poly(2‐vinyl pyridine) (P2VP‐OH) brushes. Citrate‐stabilized Au NPs (13 nm) selectively bind to P2VP‐OH functionalized regions and the quality of the resulting assemblies depends on high chemical contrast in the patterned brushes. Minimization of the interpenetration of P2VP‐OH chains into PS brushes during processing is the key for achieving high chemical contrast. Large area hexagonal arrays of single Au NPs with a placement accuracy of 3.4 nm were obtained on patterns (～20 nm spots, ～40 nm pitch) derived from self‐assembled cylinder‐forming PS‐b‐PMMA films. Linear arrays of Au NPs were generated on patterns (40 nm lines, 80nm pitch) derived from lamellae‐forming PS‐b‐PMMA that had been directed to assemble on lithographically defined masters.