Novel Cu Nanowires/Graphene as the Back Contact for CdTe Solar Cells

Cu‐nanowire‐doped graphene (Cu NWs/graphene) is successfully incorporated as the back contact in thin‐film CdTe solar cells. 1D, single‐crystal Cu nanowires (NWs) are prepared by a hydrothermal method at 160 °C and 3D, highly crystalline graphene is obtained by ambient‐pressure CVD at 1000 °C. The Cu NWs/graphene back contact is obtained from fully mixing the Cu nanowires and graphene with poly(vinylidene fluoride) (PVDF) and N‐methyl pyrrolidinone (NMP), and then annealing at 185 °C for solidification. The back contact possesses a high electrical conductivity of 16.7 S cm^?1 and a carrier mobility of 16.2 cm² V^?1 s^?1. The efficiency of solar cells with Cu NWs/graphene achieved is up to 12.1%, higher than that of cells with traditional back contacts using Cu‐particle‐doped graphite (10.5%) or Cu thin films (9.1%). This indicates that the Cu NWs/graphene back contact improves the hole collection ability of CdTe cells due to the percolating network, with the super‐high aspect ratio of the Cu nanowires offering enormous electrical transport routes to connect the individual graphene sheets. The cells with Cu NWs/graphene also exhibit an excellent thermal stability, because they can supply an active Cu diffusion source to form an stable intermediate layer of CuTe between the CdTe layer and the back contact.     

Nondestructive Characterization of Graphene Defects

An effective method is reported for oxidizing graphene/copper film in which air oxidation of the underlying copper film occurs through the grain boundary lines of graphene without oxidizing graphene. This oxidation is realized by partially immersing the graphene/copper film in sodium chloride solution. Electrons generated during etching of the graphene/copper film in electrolyte diffuse into the film in contact with air, which eventually enhances air oxidation of copper through the graphene layer. While the graphene layer acts as a protective layer against oxidation of the copper film, oxidation of the underlying Cu film near graphene grain boundary lines is observed by optical microscopy. This observation could be attributed to the selective diffusion of oxygen radicals through isolated defects and graphene grain boundaries. The process involves no appreciable oxidation of the graphene layer including the graphene grain boundary, as confirmed by use of detailed Raman and X‐ray photoelectron spectroscopy.     

Characterization of sputtered Ta-C-N film in the Cu/barrier/Si contact system

Characterization of sputtered tantalum carbon nitride (Ta-C-N) film in Cu/barrier/Si system was reported for the first time. With a 50∶50 wt.% TaC target and an optimum N₂/Ar flow rate (in sccm) ratio of 2/24, a 600 Å-thick sputtered Ta-C-N layer was shown metallurgically stable up to 650°C annealing for 30 min, which is about 100°C higher as compared to the case without nitrogen doping. Cu diffusion through the local defects or grain boundaries of the Ta-C-N barrier layer into Si substrate is the dominant factor responsible for the failure of the Ta-C-N barrier layer after high temperature annealing.     

Factors Affecting the Stability of CdTe/CdS Solar Cells Deduced from Stress Tests at Elevated Temperature

CdTe/CdS solar cells were subjected to heat stress at 200 °C in the dark under different environments (in N₂ and in air), and under illumination (in N₂). We postulate that two independent mechanisms can explain degradation phenomena in these cells: i) Excessive Cu doping of CdS: Accumulation of Cu in the CdS with stress, in the presence of Cl, will increase the photoconductivity of CdS. With limited amounts of Cu in CdS, this does NOT affect the photovoltaic behavior, but explains the crossover of light/dark current–voltage (J–V) curves. Overdoping of CdS with Cu can be detrimental to cell performance by creating deep acceptor states, acting as recombination centers, and compensating donor states. Under illumination, the barrier to Cu cations at the cell junction is reduced, and, therefore, Cu accumulation in the CdS is enhanced. Recovery of light‐stress induced degradation in CdTe/CdS cells in the dark is explained by dissociation of the acceptor defects. ii) Back contact barrier: Oxidation of the CdTe back surface in O₂/H₂O‐containing environment to form an insulating oxide results in a back‐contact barrier. This barrier is expressed by a rollover in the J–V curve. Humidity is an important factor in air‐induced degradation, as it accelerates the oxide formation. Heat treatment in the dark in inert atmosphere can stabilize the cells against certain causes of degradation, by completing the back contact anneal.     

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Conventional methods to prepare large‐area graphene for transparent conducting electrodes involve the wet etching of the metal catalyst and the transfer of the graphene film, which can degrade the film through the creation of wrinkles, cracks, or tears. The resulting films may also be obscured by residual metal impurities and polymer contaminants. Here, it is shown that direct growth of large‐area flat nanographene films on silica can be achieved at low temperature (400 °C) by chemical vapor deposition without the use of metal catalysts. Raman spectroscopy and TEM confirm the formation of a hexagonal atomic network of sp²‐bonded carbon with a domain size of about 3–5 nm. Further spectroscopic analysis reveals the formation of SiC between the nanographene and SiO₂, indicating that SiC acts as a catalyst. The optical transmittance of the graphene films is comparable with transferred CVD graphene grown on Cu foils. Despite the fact that the electrical conductivity is an order of magnitude lower than CVD graphene grown on metals, the sheet resistance remains 1–2 orders of magnitude better than well‐reduced graphene oxides.     

Water‐Soluble Poly(N‐isopropylacrylamide)–Graphene Sheets Synthesized via Click Chemistry for Drug Delivery

Covalently functionalized graphene sheets are prepared by grafting a well‐defined thermo‐responsive poly(N‐isopropylacrylamide) (PNIPAM) via click chemistry. The PNIPAM‐grafted graphene sheets (PNIPAM‐GS) consist of about 50% polymer, which endows the sheets with a good solubility and stability in physiological solutions. The PNIPAM‐GS exhibits a hydrophilic to hydrophobic phase transition at 33 °C, which is relatively lower than that of a PNIPAM homopolymer because of the interaction between graphene sheets and grafted PNIPAM. Moreover, through π–π stacking and hydrophobic interaction between PNIPAM‐GS and an aromatic drug, the PNIPAM‐GS is able to load a water‐insoluble anticancer drug, camptothecin (CPT), with a superior loading capacity of 15.6 wt‐% (0.185 g CPT per g PNIPAM‐GS). The in vitro drug release behavior of the PNIPAM‐GS‐CPT complex is examined both in water and PBS at 37 °C. More importantly, the PNIPAM‐GS does not exhibit a practical toxicity and the PNIPAM‐GS‐CPT complex shows a high potency of killing cancer cells in vitro. The PNIPAM‐GS is demonstrated to be an effective vehicle for anticancer drug delivery.     

Effects of post-annealing by the rapid thermal process on the characteristics of MOCVD-Cu/TiN/Si structures

Effects of rapid thermal annealing on the characteristics of Cu films deposited from the (hfac)Cu(VTMS) precursor and on the barrier properties of TiN layers were studied. By the post-annealing, the electrical characteristics of Cu/TiN and the microstructures of Cu films were significantly changed. The properties of Cu films were more sensitive to the annealing temperature than the annealing time. Sheet resistances were decreased in 400–450°C ranges, and abrupt increases were observed above 750°C. It was also found that the copper films showed pronounced grain growth with the (111) preferred orientation. The grain growth and condensation of copper were observed below 500°C without formation of the CuO and Cu₂O phase resulting in surface degradation. Above 500°C, the oxide compound of copper was partially formed on the surface and the inter-reaction on the Cu-TiN interface was started. The inter-reaction of Cu-Ti and Cu-Si interface vigorously occurred and the surface roughness was continuously deteriorated above 650°C. It revealed that the optimum annealing conditions for MOCVD-Cu/PVD-TiN structures to enhance the electrical characteristics without degradation of TiN barriers were in the range of 400°C.     

Effects of barrier layer and processing conditions on thin film Cu microstructure

The crystallographic texture and grain size of sputtered Cu films were characterized as a function of deposition temperature, barrier layer material, and vacuum conditions. For Cu deposited in a HV chamber, (111) Cu texture was found to weaken with increasing deposition temperatures on W, amorphous C and Ta barrier layers, each deposited at 30°C. Conversely, under identical Cu deposition conditions, texture was found to strengthen with increasing deposition temperature on Ta deposited at 100°C. Median Cu grain size varied parabolically with deposition temperature on all barrier layers and was slightly higher on the 100°C Ta at a given Cu deposition temperature, relative to the other underlayers. For depositions in an UHV chamber, Cu texture was found to strengthen with increasing Cu deposition temperature, independent of Ta deposition temperature. Median Cu grain size, however, was still higher on 100°C Ta than on 30°C Ta. The observed differences between the two different chambers suggest that the trend of weak texture at elevated deposition temperatures may be related to contamination. Characterization of the Ta underlayers revealed that the strengthened texture of Cu films deposited on 100°C Ta is likely related to textural inheritance.     

Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer Patches During CVD on Copper Foils

A synthesis method of strictly monolayer and fully homogeneous graphene across tens of centimeter squares, by chemical vapour deposition onto standard copper foils, is presented. The growth technique involves cyclic injection of a carbon precursor separated by idle times with constant hydrogen exposure. The formation of spurious multilayer patches, which accompanies the standard growth techniques based on continuous exposure to methane, is inhibited here, in a broad range of pressure and gas composition, including in two pressure regimes which are known to yield distinctive grain morphologies (dendritic versus hexagonal). Raman spectra confirm the absence of defects within the graphene films. A mechanism for growth/suppression of the multilayer patches based on the carbon storage at defective regions is proposed. The importance of multilayer suppression is highlighted in a comparative study showing the detrimental effect of patches on the performances of graphene transistors and on the optical transparency of stacked layers. The full‐layer graphene sheets are superiorly homogeneous in terms of their optical and electronic properties, and are thus suited for applications for high‐density integration as well as transparent electrodes with spatially continuous optical absorbance. Graphene transistors fabricated by the pulsed CVD method exhibit room‐temperature mobilities with a mean value of 5000 cm² V^?1 s^?1.     

Integrity of copper–hafnium,hafnium nitride and multilayered amorphous-like hafnium nitride metallization under various thickness

The barrier properties and failure mechanism of sputtered Hf, HfN and multilayered HfN/HfN thin films were studied for the application as a Cu diffusion barrier in metallization schemes. The barrier capability and thermal stability of Hf, HfN and HfN/HfN films were determined using X-ray diffraction (XRD), leakage current density, sheet resistance (R_s) and cross-sectional transmission electron microscopy (XTEM). The thin multi-amorphous-like HfN thin film (10 nm) possesses the best barrier capability than Hf (50 nm) and amorphous-like HfN (50 nm). Nitrogen incorporated Hf films possess better barrier performance than sputtered Hf films. The Cu/Hf/n⁺–p junction diodes with the Hf barrier of 50 nm thickness were able to sustain a 30-min thermal annealing at temperature up to 500 °C. Copper silicide forms after annealing. The Hf barrier fails due to the reaction of Cu and the Hf barrier, in which Cu atoms penetrate into the Si substrate after annealing at high temperature. The thermal stabilities of Cu/Hf/n⁺–p junction diodes are enhanced by nitrogen incorporation. Nitrogen incorporated Hf (HfN, 50 nm) diffusion barriers retained the integrity of junction diodes up to 550 °C with lower leakage current densities. Multilayered amorphous-like HfN (10 nm) barriers also retained the integrity of junction diodes up to 550 °C even if the thickness is thin. No copper–hafnium and copper silicide compounds are found. Nitrogen incorporated hafnium diffusion barrier can suppress the formation of copper–hafnium compounds and copper penetration, and thus improve the thermal stability of barrier layer. Diffusion resistance of nitrogen-incorporated Hf barrier is more effective. In all characterization techniques, nitrogen in the film, inducing the microstructure variation appears to play an important role in thermal stability and resistance against Cu diffusion. Amorphousization effects of nitrogen variation are believed to be capable of lengthening grain structures to alleviate Cu diffusion effectively. In addition, a thin multilayered amorphous-like HfN film not only has lengthening grain structures to alleviate Cu diffusion, but block and discontinue fast diffusion paths as well. Hence, a thin multilayered amorphous-like HfN/HfN barrier shows the excellent barrier property to suppress the formation of high resistance η′-(Cu,Si) compound phase to 700 °C.     

Multifunctional Three‐Dimensional T‐Junction Graphene Micro‐Wells: Energy‐Efficient,Plasma‐Enabled Growth and Instant Water‐Based Transfer for Flexible Device Applications

The “third‐generation” 3D graphene structures, T‐junction graphene micro‐wells (T‐GMWs) are produced on cheap polycrystalline Cu foils in a single‐step, low‐temperature (270 °C), energy‐efficient, and environment‐friendly dry plasma‐enabled process. T‐GMWs comprise vertical graphene (VG) petal‐like sheets that seemlessly integrate with each other and the underlying horizontal graphene sheets by forming T‐junctions. The microwells have the pico‐to‐femto‐liter storage capacity and precipitate compartmentalized PBS crystals. The T‐GMW films are transferred from the Cu substrates, without damage to the both, in de‐ionized or tap water, at room temperature, and without commonly used sacrificial materials or hazardous chemicals. The Cu substrates are then re‐used to produce similar‐quality T‐GMWs after a simple plasma conditioning. The isolated T‐GMW films are transferred to diverse substrates and devices and show remarkable recovery of their electrical, optical, and hazardous NO₂ gas sensing properties upon repeated bending (down to 1 mm radius) and release of flexible trasparent display plastic substrates. The plasma‐enabled mechanism of T‐GMW isolation in water is proposed and supported by the Cu plasma surface modification analysis. Our GMWs are suitable for various optoelectronic, sesning, energy, and biomedical applications while the growth approach is potentially scalable for future pilot‐scale industrial production.     

A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films

A quantitative trapping model is introduced to describe the electrical properties of a semiconductor-grain-boundary-semiconductor (SGBS) barrier in polysilicon films over a wide temperature range. The grain-boundary scattering effects on carrier transport are studied analytically by examining the behavior of the height and width of a rectangular grain-boundary potential barrier. The model also verifies the applicability of a single-crystal band diagram for the crystallite within which an impurity level exists. Carder transport includes not only thermionic field emission through the space-charge potential barrier resulting from trapping effects and through the grain-boundary scattering potential barrier but also thermionic emission over these barriers. Thermionic emission dominates at high temperatures; however, at low temperatures, thermionic field emission becomes more important and the grain-boundary scattering effects are an essential factor. By characterizing the experimental data of theI-Vcharacteristics, resistivity, mobility, and carrier concentration, this model enhances the understanding of the current transport in polysilicon films with grain sizes from 100 Å to 1 µm, doping levels from 1 × 10¹⁶to 8 × 10¹⁹cm^-3, and measurement temperatures from -176 to 144°C. The limitations of the model are also discussed.     

A Controllable Self‐Assembly Method for Large‐Scale Synthesis of Graphene Sponges and Free‐Standing Graphene Films

A simple method to prepare large‐scale graphene sponges and free‐standing graphene films using a speed vacuum concentrator is presented. During the centrifugal evaporation process, the graphene oxide (GO) sheets in the aqueous suspension are assembled to generate network‐linked GO sponges or a series of multilayer GO films, depending on the temperature of a centrifugal vacuum chamber. While sponge‐like bulk GO materials (GO sponges) are produced at 40 °C, uniform free‐standing GO films of size up to 9 cm² are generated at 80 °C. The thickness of GO films can be controlled from 200 nm to 1 µm based on the concentration of the GO colloidal suspension and evaporation temperature. The synthesized GO films exhibit excellent transparency, typical fluorescent emission signal, and high flexibility with a smooth surface and condensed density. Reduced GO sponges and films with less than 5 wt% oxygen are produced through a thermal annealing process at 800 °C with H₂/Ar flow. The structural flexibility of the reduced GO sponges, which have a highly porous, interconnected, 3D network, as well as excellent electrochemical properties of the reduced GO film with respect to electrode kinetics for the [Fe(CN)₆]^3?/4? redox system, are demonstrated.     

Atomic‐Scale Mechanism of Unidirectional Oxide Growth

A fundamental knowledge of the unidirectional growth mechanisms is required for precise control on size, shape, and thereby functionalities of nanostructures. The oxidation of many metals results in oxide nanowire growth with a bicrystal grain boundary along the axial direction. Using transmission electron microscopy that spatially and temporally resolves CuO nanowire growth during the oxidation of copper, herein, direct evidence of the correlation between unidirectional crystal growth and bicrystal grain boundary diffusion is provided. Based on atomic scale observations of the upward growth at the nanowire tip, oscillatory downward growth of atomic layers on the nanowire sidewall and the parabolic kinetics of lengthening, it is shown that bicrystal grain boundary diffusion is the mechanism by which Cu ions are delivered from the nanowire root to the tip. Together with density‐functional theory calculations, it is further shown that the asymmetry in the corner‐crossing barriers promotes the unidirectional oxide growth by hindering the transport of Cu ions from the nanowire tip to the sidewall facets. The broader applicability of these results in manipulating the growth of nanostructured oxides by controlling the bicrystal grain boundary structure that favors anisotropic diffusion for unidirectional, 1D crystal growth for nanowires or isotropic diffusion for 2D platelet growth is expected.     

Thermal and Electrical Properties of Nanocomposites Based on Self‐Assembled Pristine Graphene

Thermodynamically‐driven exfoliation and self‐assembly of pristine graphene sheets is shown to provide thermally and electrically functional polymer composites. The spreading of graphene sheets at a high energy liquid/liquid interface is driven by lowering the overall energy of the system, and provides for the formation of water‐in‐oil emulsions stabilized by overlapping graphene sheets. Polymerization of the oil phase, followed by removal of the dispersed water phase, produces inexpensive and porous composite foams. Contact between the graphene‐stabilized water droplets provides a pathway for electrical and thermal transport through the composite. Unlike other graphene foams, the graphite used to synthesize these composites is natural flake material, with no oxidation, reduction, sonication, high temperature thermal treatment, addition of surfactants, or high shear mixing required. The result is an inexpensive, low‐density material that exhibits Joule heating and displays increasing electrical conductivity with decreasing thermal conductivity.     

A new conduction model for polycrystalline silicon films

A new quantitative electrical model is introduced to solve earlier modeling inadequacies in polycrystalline silicon films. An analytical J-V expression is developed in normalized closed form, which includes the thermionic field emission through a space-charge potential barrier and through a grain-boundary scattering potential barrier and the thermionic emission over these barriers. The modeling validity has been verified experimentally for films with grain sizes of 230 to 1220 Å, doping concentrations from 1 × 10¹⁶to 8 × 10¹⁹cm^-3and over a temperature range from -176° to 144°C.     

High Surface Area MoS2/Graphene Hybrid Aerogel for Ultrasensitive NO2 Detection

A MoS₂/graphene hybrid aerogel synthesized with two‐dimensional MoS₂ sheets coating a high surface area graphene aerogel scaffold is characterized and used for ultrasensitive NO₂ detection. The combination of graphene and MoS₂ leads to improved sensing properties with the graphene scaffold providing high specific surface area and high electrical and thermal conductivity and the single to few‐layer MoS₂ sheets providing high sensitivity and selectivity to NO₂. The hybrid aerogel is integrated onto a low‐power microheater platform to probe the gas sensing performance. At room temperature, the sensor exhibits an ultralow detection limit of 50 ppb NO₂. By heating the material to 200 °C, the response and recovery times to reach 90% of the final signal decrease to <1 min, while retaining the low detection limit. The MoS₂/graphene hybrid also shows good selectivity for NO₂ against H₂ and CO, especially when compared to bare graphene aerogel. The unique structure of the hybrid aerogel is responsible for the ultrasensitive, selective, and fast NO₂ sensing. The improved sensing performance of this hybrid aerogel also suggests the possibility of other 2D material combinations for further sensing applications.     

Homogeneous CoO on Graphene for Binder‐Free and Ultralong‐Life Lithium Ion Batteries

Ultralong cycle life, high energy, and power density rechargeable lithium‐ion batteries are crucial to the ever‐increasing large‐scale electric energy storage for renewable energy and sustainable road transport. However, the commercial graphite anode cannot perform this challenging task due to its low theoretical capacity and poor rate‐capability performance. Metal oxides hold much higher capacity but still are plagued by low rate capability and serious capacity degradation. Here, a novel strategy is developed to prepare binder‐free and mechanically robust CoO/graphene electrodes, wherein homogenous and full coating of β‐Co(OH)₂ nanosheets on graphene, through a novel electrostatic induced spread growth method, plays a key role. The combined advantages of large 2D surface and moderate inflexibility of the as‐obtained β‐Co(OH)₂/graphene hybrid enables its easy coating on Cu foil by a simple layer‐by‐layer stacking process. Devices made with these electrodes exhibit high rate capability over a temperature range from 0 to 55 °C and, most importantly, maintain excellent cycle stability up to 5000 cycles even at a high current density.     

Holey Graphene Nanomanufacturing: Structure,Composition, and Electrochemical Properties

Topology is critical for properties and function of 2D nanomaterials. Membranes and films from 2D nanomaterials usually suffer from large tortuosity as a result from dense restacking of the nanosheets and thus have limited utility in applications such as electrodes for supercapacitor and batteries, which require ion transport through the nanosheet thickness. In comparison with conventional porous 2D nanomaterials, introducing holes through the nanosheets to create holey 2D nanomaterials with retention of the 2D‐related properties is a more viable approach to improve molecular transport. Here, graphene is used as a model to study the fundamental structure‐property relationship as a result from defect‐enabled hole creation. Specifically, the correlation of electrochemical capacitive properties with structure and composition for holey graphene materials is prepared using a highly scalable controlled air oxidation process. The presence of holes on graphene sheets is not sufficient to account for the observed capacitance improvement. Rather, the improvement is achieved through the combination of an enhanced mesopore fraction with simultaneous oxygen doping while retaining the graphitic carbon network with minimal damage. The detailed understanding might be further applied to other 2D materials toward a broader range of both energy‐related and other applications.     

Growth of Large Crystalline Grains of Vanadyl‐Phthalocyanine without Epitaxy on Graphene

The performance of organic semiconductor thin films in electronic devices is related to their crystal structure and morphology, with charge transport mobility dependent on the degree of crystallinity and on the crystallographic orientation. Here organic molecular beam deposition of vanadyl phthalocyanine is studied on graphene and it is shown that crystalline grains up to several micrometers across can be formed at substrate temperatures of 155 °C, compared to room temperature grain sizes of ≈30 nm. Transmission electron microscopy confirms the presence of long range order at elevated substrate temperatures and reveals that the molecules are stacked in an edge‐on orientation, but are not epitaxially aligned to the graphene. The crystalline grain sizes are significantly larger on graphene than on disordered substrates such as graphene oxide and silicon oxide. The effect on charge transport is probed by conducting atomic force microscopy, with the high temperature films on graphene showing increased mobility and uniformity and decreased trap density. These results illustrate an important advantage for the integration of graphene electrodes with organic semiconductor devices: the homogeneous surface of graphene results in high diffusion and low nucleation rates for thin film growth, encouraging the formation of highly crystalline films even with nonepitaxial growth.