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文章主要介绍了一种微波宽带数字频率合成器设计,该频率合成器采用FPGA控制的直接数字频率合成器(DDS)驱动锁相环(PLL)技术来实现低噪声、低杂散、高分辨率、快捷变频的性能,在宽频段接收机中有着广泛的应用。 相似文献
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提出一种新颖的宽带频率合成器方案。采用直接数字频率合成器(DDS)作为锁相环(PLL)参考,实现细步进;在锁相环中加入一种新颖电路,实现捷变频;通过频率扩展方式,实现宽带频率覆盖;设计指标可兼顾2~18 GHz的宽频带以及微秒的捷变频时间。分析了方案及设计中的技术难点,并给出了解决措施。该频率合成器实测指标良好,具有较强的工程实用价值,可推广使用到各型雷达产品中。 相似文献
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对比直接数字频率合成技术(DDS)和锁相环频率合成技术(PLL)的优缺点,提出一种DDS与PLL相结合的频率合成器方案。本文给出了以AD9852和ADF4106实现频率合成器的实例,并对该频率合成器的硬件电路进行了简要说明。 相似文献
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采用了锁相环(PLL)结合直接数字频率合成(DDS)的方法实现L波段小步进频率合成器,分析了此种频率合成器的相位噪声和杂散指标。介绍了具体的电路设计过程。实验测试表明,实现的L波段频率合成器结合了锁相环式和直接数字式频率合成的优点,步进间隔1 kHz,相位噪声在10 kHz处可达-98 dBc/Hz,杂散抑制-70 dBc,具有相噪低、杂散抑制好、步进小等特点。 相似文献
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介绍了DDS(直接数字频率合成)技术及PLL(锁相环)频率合成技术的工作原理及特点,给出了现代电台设计中基于DDS的频率合成器的设计方案.采用DDS输出作为参考的PLL频率合成器非常适合用做现代电台的本振. 相似文献
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针对应用于复杂空间环境的宽带接收机的需求,提出了一种新颖的频率源设计方案.采用锁相环(PLL)和倍频电路实现宽带频综,采用直接数字频率合成器(DDS)实现窄带细步进频综.给出了频率源的详细设计思路、实现方法及可靠性设计的相关内容,实测结果表明所设计的频率源各项指标均满足要求. 相似文献
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箔条和箔片的性能特性及其应用和趋势 总被引:6,自引:0,他引:6
从箔条和箔片用于干扰雷达测和扰乱、迷惑、转移或者引诱进攻出发,详细论述箔条、箔条云及箔片、箔片云的雷达散射截面、带度、平移速度、下降速度及转动等情况,空间和时间我、水平和垂直极化性能、多普勒频移效应以及频谱展宽特性等,通过箔条和箔片有效成火控雷达实例,提出对抗火控雷达的三个重要因素及其采取的对策。 相似文献
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The author observes that the social fabric of engineering, the support infrastructure of the profession, and the political and economic systems of the world are undergoing shifts that affect what engineering is, how it is accomplished, and what it should do. He asks what these changes mean in terms of the educational system and explores a few of these issues that lie between academia and the industrial environment beyond. He discusses the engineering curriculum as seen from industry, the role of continuing education, research in academia 相似文献
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"电路原理"与"信号与系统"课程的整合与优化 总被引:2,自引:2,他引:2
科学技术迅速发展,新兴学料不断增加,知识总量不断增长,迫使本科教育不断向着基础化方向发展,基础课程教学在本科教育中的地位愈来愈高。计算机技术的广泛应用,离散信号与系统的基础知识已是电气类各专业的必要的教学内容。因此基础课程要从根本上整体优化课程结构。本文提出了电气类专业“电路原理”与“信号与系统”课程教学改革方案,将两门课程教学内容进行整合与优化,并在实际教学过程中进行了教学试验,缩短了教学时间,提高了教学质量。 相似文献
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Davis R.F. Kelner G. Shur M. Palmour J.W. Edmond J.A. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1991,79(5):677-701
The deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts for fabrication of solid-state devices capable of operation at temperatures to 925 K are addressed. The results of several research programs in the United States, Japan and the Soviet Union, and the remaining challenges related to the development of silicon carbide for microelectronics are presented and discussed. It is concluded that the combination of α-SiC on α-SiC appears especially viable for device fabrication. In addition, considerable progress in the understanding of the surface science, ohmic and Schottky contacts, and dry etching have recently been made. The combination of these advances has allowed continual improvement in Schottky diode p-n junction, MESFET, MOSFET, HBT, and LED devices 相似文献
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《Communications Magazine, IEEE》2008,46(9):52-56
Over the last 40 years in the semiconductor industry, one of the most reliable truths has been that "thepath forward is through integration." Moore's law and its various derivatives and cousins have illustrated how greater integration has provided tremendous benefits in cost, power, size, and performance. While shrinking process lithography has been a critical enabler of this trend, we should remember that tremendous innovation in device technology, circuits, system architecture, computer aided design (CAD), packaging, and many other areas have been necessary as well. The exponential integration phenomenon has not been limited to memory and microprocessors: mixed signal and radio functions have also seen striking advances in integration over the last 20 years, from cell phones to wireless LANs, integrated "systemon-a-chip" (SOC) transceivers have become prevalent in the circuits conferences, journals, and - in some applications - have even made it into commercial mainstream products. 相似文献
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在日本电视广播的发展过程中,电视信号技术、电视节目转播技术、发射机技术以及天线技术等发挥了不可替代的作用。这些技术在长达60多年的模拟电视广播中被大量的开发、使用,尤其是射频相关技术为日后地面数字电视广播的发展提供了重要参考。主要介绍了日本电视广播中该相关技术的发展,并进行了讨论。 相似文献
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文章介绍了针对特定电压变化特性的被测设备的、简单的、低成本的电压波动和闪烁的解析测量法,并将实际解析法测量计算结果与直接测量法结果进行了比较、验证,证明该方法切实可行,且符合标准规定的容差要求。 相似文献