Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga2In4S9 toward High‐Performance UV Photodetection

2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high‐quality 2D ternary Ga₂In₄S₉ flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV‐light‐sensing applications are explored systematically. Photodetectors based on the Ga₂In₄S₉ flakes display outstanding UV detection ability (R _λ = 111.9 A W^?1, external quantum efficiency = 3.85 × 10⁴%, and D* = 2.25 × 10¹¹ Jones@360 nm) with a fast response speed (τ_ring ≈ 40 ms and τ_decay ≈ 50 ms). In addition, Ga₂In₄S₉‐based phototransistors exhibit a responsivity of ≈10⁴ A W^?1@360 nm above the critical back‐gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga₂In₄S₉ nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.     

2D Ruddlesden–Popper Polycrystalline PerovskitePyro-Phototronic Photodetectors

Two-dimensional (2D) Ruddlesden–Popper (RP) layered halide perovskite has attracted wide attentions due to its unique structure and excellent optoelectronic properties. With inserting organic cations, inorganic octahedrons are forced to extend in a certain direction, resulting in an asymmetric 2D perovskite crystal structure and causing spontaneous polarization. The pyroelectric effect resulted from spontaneous polarization exhibits a broad prospect in the application of optoelectronic devices. Herein, 2D RP polycrystalline perovskite (BA)₂(MA)₃Pb₄I₁₃ film with excellent crystal orientation is fabricated by hot-casting deposition, and a class of 2D hybrid perovskite photodetectors (PDs) with pyro-phototronic effect is proposed, achieving temperature and light detection with greatly improved performance by coupling multiple energies. Because of the pyro-phototronic effect, the current is ≈35 times to that of the photovoltaic effect current under 0 V bias. The responsivity and detectivity are 12.7 mA W⁻¹ and 1.73 × 10¹¹ Jones, and the on/off ratio can reach 3.97 × 10³. Furthermore, the influences of bias voltage, light power density, and frequency on the pyro-phototronic effect of 2D RP polycrystalline perovskite PDs are explored. The coupling of spontaneous polarization and light facilitates photo-induced carrier dissociation and tunes the carrier transport process, making 2D RP perovskites a competitive candidate for next-generation photonic devices.     

Highly Efficient and Stable Solar Cells Based on Crystalline Oriented 2D/3D Hybrid Perovskite

Highly efficient and stable 2D/3D hybrid perovskite solar cells using 2‐thiophenemethylammonium (ThMA) as the spacer cation are successfully demonstrated. It is found that the incorporation of ThMA spacer cation into 3D perovskite, which forms a 2D/3D hybrid structure, can effectively induce the crystalline growth and orientation, passivate the trap states, and hinder the ion motion, resulting in improved carrier lifetime and reduced recombination losses. The optimized device exhibits a power conversion efficiency (PCE) of 21.49%, combined with a high V_OC of 1.16 V and a notable fill factor (FF) of 81%. More importantly, an encapsulated 2D/3D hybrid perovskite device sustains ≈99% of its initial PCE after 1680 h in the ambient atmosphere, whereas the control 3D perovskite device drops to ≈80% of the original performance. Importantly, the device stability under continuous light soaking (100 mW cm^?2) is enhanced significantly for 2D/3D perovskite device in comparison with that of the control device. These results reveal excellent photovoltaic properties and intrinsic stabilities of the 2D/3D hybrid perovskites using ThMA as the spacer cation.     

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

2D hybrid perovskites have shown great promise in the photodetection field, due to their intriguing attributes stemming from unique structural architectures. However, the great majority of detectors based on this 2D system possess a relatively low response speed (≈ms), making it extremely urgent to develop new candidates for superfast photodetection. Here, a new organic–inorganic hybrid perovskite, (PA)₂(FA)Pb₂I₇ (EFA, where PA is n‐pentylaminium and FA is formamidine), which features the 2D Ruddlesden–Popper type perovskite framework that is composed of the corner‐sharing PbI₆ octahedra is reported. Significantly, photodetectors fabricated on highly oriented thin films, which exhibit a perfect orientation parallel to 2D inorganic perovskite layers, exhibit a superfast response time up to ≈2.54 ns. To the best of the knowledge, this figure‐of‐merit catches up with that of the top‐ranking commercial materials, and sets a new record for 2D hybrid perovskite photodetectors. Moreover, extremely high photodetectivity (≈1.73 × 10¹⁴ Jones, under an incident power intensity of ≈46 µW cm^?2), considerable switching ratios (>10³), and low dark current (≈10 pA) are also achieved in the detector, indicating its great potential for high‐efficiency photodetection. These results shed light on the possibilities to explore new 2D candidates for assembling future high‐performance optoelectronic devices.     

Doping and Switchable Photovoltaic Effect in Lead‐Free Perovskites Enabled by Metal Cation Transmutation

Creating defect tolerant lead‐free halide perovskites is the major challenge for development of high‐performance photovoltaics with nontoxic absorbers. Few compounds of Sn, Sb, or Bi possess ns² electronic configuration similar to lead, but their poor photovoltaic performances inspire us to evaluate other factors influencing defect tolerance properties. The effect of heavy metal cation (Bi) transmutation and ionic migration on the defects and carrier properties in a 2D layered perovskite (NH₄)₃(Sb_(1?x)Bi_x)₂I₉ system is investigated. It is shown, for the first time, the possibility of engineering the carriers in halide perovskites via metal cation transmutation to successfully form intrinsic p‐ and n‐type materials. It is also shown that this material possesses a direct–indirect bandgap enabling high absorption coefficient, extended carrier lifetimes >100 ns, and low trap densities similar to lead halide perovskites. This study also demonstrates the possibility of electrical poling to induce switchable photovoltaic effect without additional electron and hole transport layers.     

Improving Out-of-Plane Charge Mobility and Phase Stability of Dion-Jacobson Lead-Free Perovskites via Intercalating π-Conjugated Aromatic Spacers

The layered quasi-2D perovskites are recognized as one of the effective strategies to resolve the big problem of intrinsic phase instability of the perovskites. However, in such configurations, their performance is fundamentally limited due to the correspondingly weakened out-of-plane charge mobility. Herein, the π-conjugated p-phenylenediamine (PPDA) is introduced as organic ligand ions for rationally designing lead-free and tin-based 2D perovskites with the aid of theoretical computation. It is evidenced that both out-of-plane charge transport capacity and stability can be significantly enhanced within as-established quasi-2D Dion-Jacobson (DJ) (PPDA)Cs_n-1Sn_nI_3n+1 perovskites. The obviously increased electrical conductivity and reduced carrier effective masses are attributed to the enhanced interlayer interactions, limited structural distortions of diamine cations, as well as improved orbital coupling between Sn²⁺ and I⁻ ions of (PPDA)Cs_n-1Sn_nI_3n+1 perovskites. Accordingly, by dimension engineering of the inorganic layer (n), the bandgap (E_g) of quasi-2D perovskites can be linearly tailored toward the suitable E_g (1.387 eV) with optimal photoelectric conversion efficiency (PCE) of 18.52%, representing their great potential toward promising applications in advanced solar cells.     

Nonconfinement Structure Revealed in Dion–Jacobson Type Quasi‐2D Perovskite Expedites Interlayer Charge Transport

Dion–Jacobson (DJ) type 2D perovskites with a single organic cation layer exhibit a narrower distance between two adjacent inorganic layers compared to the corresponding Ruddlesden–Popper perovskites, which facilitates interlayer charge transport. However, the internal crystal structures in 2D DJ perovskites remain elusive. Herein, in a p‐xylylenediamine (PDMA)‐based DJ perovskite bearing bifunctional NH₃⁺ spacer, the compression from confinement structure (inorganic layer number, n = 1, 2) to nonconfinement structure (n > 3) with the decrease of PDMA molar ratio is unraveled. Remarkably, the nonconfined perovskite displays shorter spacing between 2D quantum wells, which results in a lower exciton binding energy and hence promotes exciton dissociation. The significantly diminishing quantum confinement promotes interlayer charge transport leading to a maximum photovoltaic efficiency of ≈11%. Additionally, the tighter interlayer packing arising from the squeezing of inorganic octahedra gives rise to enhanced ambient stability.     

Ultrathin In2O3 Nanosheets toward High Responsivity and Rejection Ratio Visible-Blind UV Photodetection

Photoelectrochemical-type visible-blind ultraviolet photodetectors (PEC VBUV PDs) have gained ever-growing attention due to their simple fabrication processes, uncomplicated packaging technology, and high sensitivity. However, it is still challenging to achieve high-performance PEC VBUV PDs based on a single material with good spectral selectivity. Here, it is demonstrated that individual ultrathin indium oxide (In₂O₃) nanosheets (NSs) are suitable for designing high-performance PEC VBUV PDs with high responsivity and UV/visible rejection ratio for the first time. In₂O₃ NSs PEC PDs show excellent UV photodetection capability with an ultrahigh photoresponsivity of 172.36 mA W⁻¹ and a high specific detectivity of 4.43 × 10¹¹ Jones under 254 nm irradiation, which originates from the smaller charge transfer resistance (R_ct) at the In₂O₃ NSs/electrolyte interface. The light absorption of In₂O₃ NSs takes a blueshift due to the quantum confinement effect, granting good spectral selectivity for visible-blind detection. The UV/visible rejection ratio of In₂O₃ NSs PEC PDs is 1567, which is 30 times higher than that of In₂O₃ nanoparticles (NPs) and exceeds all recently reported PEC VBUV PDs. Moreover, In₂O₃ NSs PEC PDs show good stability and good underwater imaging capability. The results verify that ultrathin In₂O₃ NSs have potential in underwater optoelectronic devices.     

Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

2D lead iodide (PbI₂) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution‐based method is developed to synthesize ultraflat PbI₂ nanoflakes for high‐performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow‐rate crystal growth, high‐quality PbI₂ nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI₂ nanoflakes exhibit a high photoresponsivity of 0.51 A W^?1, a high detectivity of 4.0 × 10¹⁰ Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI₂ nanoflakes.     

Highly‐Anisotropic Dion–Jacobson Hybrid Perovskite by Tailoring Diamine into CsPbBr3 for Polarization‐Sensitive Photodetection

2D materials with inherent attributes of structural anisotropy have been well applied in the field of polarization‐sensitive photodetection. However, to explore new 2D members with strong polarized‐light responses still remains a challenge. Herein, by alloying diamine molecule into the 3D prototype of CsPbBr₃, a new Dion–Jacobson (DJ) type 2D perovskite of (HDA)CsPb₂Br₇ ( 1 , where HDA²⁺ is 1,6‐hexamethylenediammonium), containing both inorganic Cs metal and organic cations is designed. The natural anisotropy characteristics of 1 are solidly elucidated by analyzing crystal structure, electric conductivity, and optical properties. Strikingly, distinct polarization‐sensitive responses are observed in 1 , owing to its strong anisotropy of optical absorption (the ratio of α_c/α_b ≈ 2.2). Consequently, crystal‐based detectors of 1 exhibit fascinating photo‐activities to polarized‐light, including high detectivity (1.5 × 10⁹ Jones), large dichroism ratio (I_ph^c/I_ph^b ≈ 1.6) and fast responding rate (200 µs). All these polarization‐sensitive performances along with intriguing phase stability make 1 a potential candidate for polarized‐light detection. This work paves a pathway toward new functionalities of DJ‐type 2D hybrid perovskites for their future optoelectronic device applications.     

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High‐Throughput Chemical Vapor Deposition Method

Tuning the optical properties of 2D direct bandgap semiconductors is crucial for applications in photonic light source, optical communication, and sensing. In this work, the excitonic properties of molybdenum disulphide (MoS₂) are successfully tuned by directly depositing it onto silica microsphere resonators using chemical vapor deposition method. Multiple whispering gallery mode (WGM) peaks in the emission wavelength range of ≈650–750 nm are observed under continuous wave excitation at room temperature. Time‐resolved photoluminescence (TRPL) and femtosecond transient absorption (TA) spectroscopy are conducted to study light‐matter interaction dynamics of the MoS₂ microcavities. TRPL study suggests radiative recombination rate of carrier‐phonon scattering and interband transition processes in MoS₂ is enhanced by a factor of ≈1.65 due to Purcell effect in microcavities. TA spectroscopy study shows modulation of the interband transition process mainly occurs at PB‐A band with an estimated F ≈ 1.60. Furthermore, refractive index sensing utilizing WGM peaks of MoS₂ is established with sensitivity up to ≈150 nm per refractive index unit. The present work provides a large‐scale and straightforward method for coupling atomically thin 2D gain media with cavities for high‐performance optoelectronic devices and sensors.     

Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene

2D materials exhibit superior properties in electronic and optoelectronic fields. The wide demand for high-performance optoelectronic devices promotes the exploration of diversified 2D materials. Recently, 2D covalent organic frameworks (COFs) have emerged as next-generation layered materials with predesigned π-electronic skeletons and highly ordered topological structures, which are promising for tailoring their optoelectronic properties. However, COFs are usually produced as solid powders due to anisotropic growth, making them unreliable to integrate into devices. Here, by selecting tetraphenylethylene monomers with photoelectric activity, elaborately designed photosensitive 2D-COFs with highly ordered donor-acceptor topologies are in situ synthesized on graphene, ultimately forming COF-graphene heterostructures. Ultrasensitive photodetectors are successfully fabricated with the COF_ETBC–TAPT-graphene heterostructure and exhibited an excellent overall performance with a photoresponsivity of ≈3.2 × 10⁷ A W⁻¹ at 473 nm and a time response of ≈1.14 ms. Moreover, due to the high surface area and the polarity selectivity of COFs, the photosensing properties of the photodetectors can be reversibly regulated by specific target molecules. The research provides new strategies for building advanced functional devices with programmable material structures and diversified regulation methods, paving the way for a generation of high-performance applications in optoelectronics and many other fields.     

The First 2D Homochiral Lead Iodide Perovskite Ferroelectrics: [R‐ and S‐1‐(4‐Chlorophenyl)ethylammonium]2PbI4

2D organic–inorganic lead iodide perovskites have recently received tremendous attention as promising light absorbers for solar cells, due to their excellent optoelectronic properties, structural tunability, and environmental stability. However, although great efforts have been made, no 2D lead iodide perovskites have been discovered as ferroelectrics, in which the ferroelectricity may improve the photovoltaic performance. Here, by incorporating homochiral cations, 2D lead iodide perovskite ferroelectrics [R‐1‐(4‐chlorophenyl)ethylammonium]₂PbI₄ and [S‐1‐(4‐chlorophenyl)ethylammonium]₂PbI₄ are successfully obtained. The vibrational circular dichroism spectra and crystal structural analysis reveal their homochirality. They both crystalize in a polar space group P1 at room temperature, and undergo a 422F1 type ferroelectric phase transition with transition temperature as high as 483 and 473.2 K, respectively, showing a multiaxial ferroelectric nature. They also possess semiconductor characteristics with a direct bandgap of 2.34 eV. Nevertheless, their racemic analogue adopts a centrosymmetric space group P2₁/c at room temperature, exhibiting no high‐temperature phase transition. The homochirality in 2D lead iodide perovskites facilitates crystallization in polar space groups. This finding indicates an effective way to design high‐performance 2D lead iodide perovskite ferroelectrics with great application prospects.     

Near‐Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility

2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe₂ can be an alternative choice owing to its smaller band gap ≈1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe₂/graphene heterostructure photodetector is demonstrated for efficient near‐infrared (NIR) light detection. The devices achieve a high responsivity of ≈970.82 A W^?1 (at 1064 nm) and broadband photodetection (visible‐1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe₂, the devices demonstrate an extremely high photoconductive gain of 4.69 × 10⁸ and detectivity of 1.55 × 10¹¹ cm Hz^1/2 W^?1. Moreover, flexible devices based on the MoTe₂/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of ≈60 A W^?1 at 1064 nm at V _DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors.     

Bismuthene Metallurgy: Transformation of Bismuth Particles to Ultrahigh‐Aspect‐Ratio 2D Microsheets

Ultrathin bismuth exhibits promising performance for topological insulators due to its narrow band gap and intrinsic strong spin–orbit coupling, as well as for energy‐related applications because of its electronic and mechanical properties. However, large‐scale production of 2D sheets via liquid‐phase exfoliation as an established large‐scale method is restricted by the strong interaction between bismuth layers. Here, a sonication method is utilized to produce ultrahigh‐aspect‐ratio bismuthene microsheets. The studies on the mechanism excludes the exfoliation of the layered bulk bismuth and formation of the microsheets is attributed to the melting of spherical particles (r = 1.5 µm) at a high temperature—generated under the ultrasonic tip—followed by a recrystallization step producing uniformly‐shaped ultrathin microsheets (A = 0.5–2 µm², t: ≈2 nm). Notably, although the preparation is performed in oxygenated aqueous solution, the sheets are not oxidized, and they are stable under ambient conditions for at least 1 month. The microsheets are used to construct a vapor sensor using electrochemical impedance spectroscopy as detection technique. The device is highly selective, and it shows long‐term stability. Overall, this project exhibits a reproducible method for large‐scale preparation of ultrathin bismuthene microsheets in a benign environment, demonstrating opportunities to realize devices based on bismuthene.     

Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity

Graphdiyne (GDY), a newly emerging 2D carbon allotrope, has been widely explored in various fields owing to its outstanding electronic properties such as the intrinsic bandgap and high carrier mobility. Herein, GDY-based photoelectrochemical-type photodetection is realized by spin-coating ultrathin GDY nanosheets onto flexible poly(ethylene terephthalate) (PET) substrates. The GDY-based photodetectors (PDs) demonstrate excellent photo-responsive behaviors with high photocurrent (P_ph, 5.98 µA cm ^{- 2}), photoresponsivity (R_ph, 1086.96 µA W ^{- 1}), detectivity (7.31 × 10¹⁰ Jones), and excellent long-term stability (more than 1 month). More importantly, the PDs maintain an excellent P_ph after 1000 cycles of bending (4.45 µA cm ^{- 2}) and twisting (3.85 µA cm ^{- 2}), thanks to the great flexibility of the GDY structure that is compatible with the flexible PET substrate. Density functional theory (DFT) calculations are adopted to explore the electronic characteristics of GDY, which provides evidence for the performance enhancement of GDY in alkaline electrolyte. In this way, the GDY-based flexible PDs can enrich the fundamental study of GDY and pave the way for the exploration of GDY heterojunction-based photodetection.     

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Silicon‐based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light–matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In₂S₃ with Gr/Si PDs is demonstrated. The introduction of the double‐heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In₂S₃/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 10⁴ A W^?1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In₂S₃/graphene/Si PD expresses outstanding long‐term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high‐sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.     

Merits and Challenges of Ruddlesden–Popper Soft Halide Perovskites in Electro‐Optics and Optoelectronics

Following the rejuvenation of 3D organic–inorganic hybrid perovskites, like CH₃NH₃PbI₃, (quasi)‐2D Ruddlesden–Popper soft halide perovskites R₂A_n?1Pb_nX_3n+1 have recently become another focus in the optoelectronic and photovoltaic device community. Although quasi‐2D perovskites were first introduced to stabilize optoelectronic/photovoltaic devices against moisture, more interesting properties and device applications, such as solar cells, light‐emitting diodes, white‐light emitters, lasers, and polaritonic emission, have followed. While delicate engineering design has pushed the performance of various devices forward remarkably, understanding of the fundamental properties, especially the charge‐transfer process, electron–phonon interactions, and the growth mechanism in (quasi)‐2D halide perovskites, remains limited and even controversial. Here, after reviewing the current understanding and the nexus between optoelectronic/photovoltaic properties of 2D and 3D halide perovskites, the growth mechanisms, charge‐transfer processes, vibrational properties, and electron–phonon interactions of soft halide perovskites, mainly in quasi‐2D systems, are discussed. It is suggested that single‐crystal‐based studies are needed to deepen the understanding of the aforementioned fundamental properties, and will eventually contribute to device performance.     

Ultrathin Ruddlesden–Popper Perovskite Heterojunction for Sensitive Photodetection

Thanks to their unique optical and electric properties, 2D materials have attracted a lot of interest for optoelectronic applications. Here, the emerging 2D materials, organic–inorganic hybrid perovskites with van der Waals interlayer interaction (Ruddlesden–Popper perovskites), are synthesized and characterized. Photodetectors based on the few‐layer Ruddlesden–Popper perovskite show good photoresponsivity as well as good detectivity. In order to further improve the photoresponse performance, 2D MoS₂ is chosen to construct the perovskite–MoS₂ heterojunction. The performance of the hybrid photodetector is largely improved with 6 and 2 orders of magnitude enhancement for photoresponsivity (10⁴ A W^?1) and detectivity (4 × 10¹⁰ Jones), respectively, which demonstrates the facile charge separation at the interface between perovskite and MoS₂. Furthermore, the contribution of back gate tuning is proved with a greatly reduced dark current. The results demonstrated here will open up a new field for the investigation of 2D perovskites for optoelectronic applications.     

Asymmetrically Encapsulated Vertical ITO/MoS2/Cu2O Photodetector with Ultrahigh Sensitivity

Strong light absorption, coupled with moderate carrier transport properties, makes 2D layered transition metal dichalcogenide semiconductors promising candidates for low intensity photodetection applications. However, the performance of these devices is severely bottlenecked by slow response with persistent photocurrent due to long lived charge trapping, and nonreliable characteristics due to undesirable ambience and substrate effects. Here ultrahigh specific detectivity (D*) of 3.2 × 10¹⁴ Jones and responsivity (R) of 5.77 × 10⁴ A W^?1 are demonstrated at an optical power density (P_op) of 0.26 W m^?2 and external bias (V_ext) of ?0.5 V in an indium tin oxide/MoS₂/copper oxide/Au vertical multi‐heterojunction photodetector exhibiting small carrier transit time. The active MoS₂ layer being encapsulated by carrier collection layers allows us to achieve repeatable characteristics over large number of cycles with negligible trap assisted persistent photocurrent. A large D* > 10¹⁴ Jones at zero external bias is also achieved due to the built‐in field of the asymmetric photodetector. Benchmarking the performance against existing reports in literature shows a viable pathway for achieving reliable and highly sensitive photodetectors for ultralow intensity photodetection applications.