High-Temperature Thermoelectric Properties of p-Type Yb-Filled Skutterudite Nanocomposites with FeSb2 Nanoinclusions

Bulk thermoelectric (TE) nanocomposite materials have attracted considerable attention due to their great potential to exhibit higher dimensionless figure of merit ZT. Filled skutterudites of both n-type and p-type have already demonstrated their excellent high-temperature TE performance, good mechanical properties, and thermal stability. Herein, we extend this work to Yb-filled p-type skutterudite nanocomposites with in?situ precipitated FeSb₂ nanoinclusions. Such a nanocomposite material can be easily synthesized by fine control of starting stoichiometry and the subsequent heat treatment process. By taking advantage of these naturally occurring FeSb₂ nanoparticles, we achieve ZT _max?=?0.74 in Yb_0.6Fe₂Co₂Sb₁₂/0.05FeSb₂ at 780?K. We apply the method of four coefficients to calculate the density-of-states effective mass and the carrier scattering parameter. We find that a larger effective mass induced by the presence of nanoparticles is the origin of the enhanced Seebeck coefficient.     

Stability of Skutterudite Thermoelectric Materials

By multifilling with La, Ba, Ga, Ti, Yb, Ca, Al, and In, the dimensionless figure of merit ZT of filled skutterudites has been improved in this work. ZT reached 0.75 for p-type (La,Ba,Ga,Ti) _x (Fe,Co)₄Sb₁₂ (x = 0.8 to 1.0) and 1.0 for n-type (Yb,Ca,Al,Ga,In) _y (Co,Fe)₄Sb₁₂ (y = 0.7 to 0.9). After annealing at 873 K for 180 h, 300 h, 710 h, 1000 h, and 5000 h in vacuum, the Seebeck coefficient S and the electrical resistivity ρ of the samples increased while the thermal conductivity λ decreased with increasing annealing time. As a result, the ZT values of both p- and n-type skutterudites remained unchanged or were slightly improved, demonstrating the excellent thermal stability of these skutterudites.     

p型方钴矿化合物BayFeCo3Sb12的热电性能研究

用两步固相反应法合成了单相的p型BayFeCo3Sb12化合物,并系统地研究了Ba不同填充分数对方钴矿化合物热电性能的影响:化合物载流子浓度强烈地依赖于填充原子的填充分数,随Ba填充分数y的增加,载流子浓度及电导率降低;塞贝克系数随温度T的上升而增加,比CoSb3的塞贝克系数有一定程度的提高,尤其是在中温部分有大幅度提高,得到的最大塞贝克系数由CoSb3的107μVK-1提高到Ba1.0FeCo3Sb12的235μVK-1晶格热导率随Ba的填充分数y的增加而进一步下降,Ba08FeCo3Sb12甚至降到2.2 Wm1K1;Ba08FeCo3Sb12化合物显示最大热电性能指数,在850K左右其最大无量纲热电性能指数ZT值达0.75.     

In y Co4Sb12 Skutterudite: Phase Equilibria and Crystal Structure

Phase relations were investigated for the In-Co-Sb system in the temperature range from 375°C to 800°C using as-cast and annealed alloys. Phase equilibria in the CoSb-InSb-(Sb) composition triangle are presented by a series of isothermal sections and solidus and liquidus surfaces, accompanied by a Schulz–Scheil reaction scheme. The indium-filled skutterudite In _y Co₄Sb₁₂ already forms an equilibrium with liquid at 484°C, which might limit high-temperature applications of In-Co-Sb-based skutterudites. The maximal solubility of indium in In _y Co₄Sb₁₂ (y = 0.22) remains almost constant in the temperature range from 475°C to 700°C and corresponds to the equilibrium with CoSb₂ and InSb. The solubility of indium in the skutterudite phase is reduced to y = 0.09 when it coexists in equilibrium with InSb and (Sb), and this decrease of the solubility might be responsible for the formation of InSb precipitates. Temperature-dependent x-ray single-crystal and specific heat data for In _y Co₄Sb₁₂ were employed to determine the rattling behavior of In atoms in the skutterudite lattice.     

Thermoelectric Properties of Indium-Added Skutterudites In x Co4Sb12

The high-temperature thermoelectric properties of In _x Co₄Sb₁₂ (0.05 ≤ x ≤ 0.40) skutterudite compounds were investigated in this study. The phase states of the samples were identified by x-ray diffraction analysis and field-emission scanning electron microscopy at room temperature. InSb and CoSb₂ were found as secondary phases in samples with x = 0.10 to 0.40. The filling limit of In into the CoSb₃ cages of In _x Co₄Sb₁₂ was in the range 0.05 < x < 0.10. The electrical resistivity, Seebeck coefficient, and thermal conductivity of the In _x Co₄Sb₁₂ samples were measured from room temperature to 773 K. The Seebeck coefficient of all samples was negative. Reduction of the thermal conductivity by In addition resulted in a high thermoelectric figure of merit (ZT) of 0.67 for In_0.35Co₄Sb₁₂ at 600 K.     

稀土元素Ce填充p型方钴矿化合物的热电性能

用高温熔融-退火扩散法合成了富Co组成的方钴矿化合物CeyFexCo4-xSb12(y=0～0.42),并对化合物的结构和热电性能进行了研究.结果表明:化合物的晶格常数随Ce填充量的增加而线性增加.霍尔系数RH为正值,CeyFexCo4-xSb12化合物表现p型传导.载流子浓度和电导率随Ce填充量的增加而减少.Seebeck系数随Ce填充量的增加及温度的上升而增加.晶格热导率在Ce填充量约为0.29时达到最小值,说明在Sb组成的二十面体空洞中部分填充时,Ce的扰动对声子的散射作用最强.在725K时,组成为Ce0.29Fe1.41Co2.59Sb12.32化合物的最大无量纲热电性能指数达到0.65.     

稀土元素Ce填充p型方钴矿化合物的热电性能

用高温熔融-退火扩散法合成了富Co组成的方钴矿化合物CeyFexCo4-xSb12(y=0～0.42),并对化合物的结构和热电性能进行了研究.结果表明:化合物的晶格常数随Ce填充量的增加而线性增加.霍尔系数RH为正值,CeyFexCo4-xSb12化合物表现p型传导.载流子浓度和电导率随Ce填充量的增加而减少.Seebeck系数随Ce填充量的增加及温度的上升而增加.晶格热导率在Ce填充量约为0.29时达到最小值,说明在Sb组成的二十面体空洞中部分填充时,Ce的扰动对声子的散射作用最强.在725K时,组成为Ce0.29Fe1.41Co2.59Sb12.32化合物的最大无量纲热电性能指数达到0.65.     

Effect of In Impurity on Thermoelectric Properties of Ba and In Double-Filled n-Type Skutterudite Materials

A series of (Ba,In) double-filled n-type skutterudite materials with nominal composition Ba_0.4In _m Co₄Sb₁₂ (m?=?0 to 0.4, ??m?=?0.1) has been prepared by melt quenching, annealing, and spark plasma sintering (SPS). The presence of In impurity and its effect on the thermoelectric properties of the filled skutterudite materials have been precisely investigated in this work. All samples consisted of skutterudite phase, while traces of In-containing impurity were detected in samples with m????0.3. The electrical conductivity and thermal conductivity decreased, and the absolute value of the Seebeck coefficient increased with increasing m in the range 0 to 0.2; however, the inverse behavior of the electrical conductivity, thermal conductivity, and Seebeck coefficient was observed in the samples with m????0.3. The thermoelectric properties of Ba_0.4In _m Co₄Sb₁₂ in the m range of 0 to 0.2 were changed because of carrier concentration degradation and strong lattice scattering induced by the In filler, while they were intensively affected by the In-containing impurity for m????0.3. Compared with the Ba single-filled skutterudite material, the power factors of all (Ba,In) double-filled skutterudite materials significantly increased and the lattice thermal conductivity dramatically decreased. As a result, two large ZT values for the samples with m?=?0.2 and 0.4 reached 1.19 and 1.25 at 800?K, which is an enhancement of 52% and 60%, respectively.     

Development of Skutterudite Thermoelectric Materials and Modules

Multifilling with La, Ba, Ga, and Ti in p-type skutterudite and Yb, Ca, Al, Ga, and In in n-type skutterudite remarkably reduces their thermal conductivity, resulting in enhancement of their dimensionless figure of merit ZT to ZT?=?0.75 for p-type (La,Ba,Ga,Ti)₁(Fe,Co)₄Sb₁₂ and ZT?=?1.0 for n-type (Yb,Ca,Al,Ga,In)_0.7(Co,Fe)₄Sb₁₂. A thermoelectric module technology suitable for these skutterudites including diffusion barrier and electrode materials has been established. The diffusion barrier materials allow the electrode to coexist stably with the p/n skutterudites in the module??s working temperature range of room temperature to 600°C. Under conditions of hot/cold-side temperatures of 600°C/50°C, a skutterudite module with size of 50?mm?×?50?mm?×?7.6?mm exhibited generation performance of 32?W power output and 8% thermoelectric conversion efficiency.     

Thermal Cycling Effects on the Thermoelectric Properties of n-Type In,Ce-Based Skutterudite Compounds

n-Type In-filled CoSb₃ is a known skutterudite compound that has shown promising thermoelectric (TE) properties resulting in high dimensionless figure of merit values at elevated temperatures. Use in various waste heat recovery applications will require survival and operation after exposure to harsh thermal cycling environments. This research focused on uncovering the thermal cycling effects on TE properties of n-type In_0.2Co₄Sb₁₂ and In_0.2Ce_0.15Co₄Sb₁₂ skutterudite compositions as well as quantifying their temperature-dependent structural properties (elastic modulus, shear modulus, and Poisson??s ratio). It was observed that the Seebeck coefficient and resistivity increased only slightly in the double-filled In,Ce skutterudite materials upon thermal cycling. In the In-filled skutterudites the Seebeck coefficient remained approximately the same on thermal cycling, while the electrical resistivity increased significantly after thermal cycling. Results also show that the thermal conductivity marginally decreases in the case of In-filled skutterudites, whereas the reduction is more pronounced in In,Ce-based skutterudite compounds. The possible reason for this kind of reduction can be attributed to grain pinning effects due to formation of nanoinclusions. High-temperature structural property measurements (i.e., Young??s modulus and shear modulus) are also reported. The results show that these structural properties decrease slowly as temperature increases and that the compounds are structurally stable after numerous (up to 200) thermal cycles.     

Synthesis and Thermoelectric Properties of In and Pr Double-Filled Skutterudites In x Pr y Co4Sb12

Double-filled skutterudites In _x Pr _y Co₄Sb₁₂, which are currently being investigated for potential applications as thermoelectric materials, have been successfully prepared by inductive melting and annealing. Our results showed that In and Pr double filling effectively improves both electrical conductivity and Seebeck coefficient compared with pristine or single-filled CoSb₃, giving rise to a respectable power factor. The largest power factor, 2.33 m Wm^?1 K^?2, was achieved at 609 K for In_0.05Pr_0.05Co₄Sb₁₂; this value is approximately three times that for In _x Co₄Sb₁₂ (x ≤ 0.3) skutterudites. These results imply that In and Pr double filling are better than In single filling for efficient improvement of the thermoelectric properties of CoSb₃ skutterudite.     

Power-Generation Performance and Durability of a Skutterudite Thermoelectric Generator

By using a p-type (La, Ba, Ga, Ti)₁(Fe, Co)₄Sb₁₂ skutterudite with a dimensionless figure of merit, ZT, = 0.75 at 500°C and an n-type (Yb, Ca, Al, Ga, In)_0.7(Co, Fe)₄Sb₁₂ skutterudite with ZT = 1.0 at 500°C, we fabricated a thermoelectric power-generation module capable of working at high temperatures (up to 600°C). When its hot and cold sides were at 600°C and 30°C, respectively, the power output of a 50 mm × 50 mm × 7.6 mm skutterudite module was 34 W and its thermoelectric conversion efficiency was 8%. In a durability test with the module’s hot and cold sides continuously maintained at 600°C and 80°C, respectively, for 8000 h, power generation first decreased by approximately 6% in the initial 300 h then remained constant.     

Thermoelectric Performance and High-Temperature Creep Behavior of GeTe-Based Thermoelectric Materials

New, efficient thermoelectric materials (GeTe) _x (Mn_0.6Sn_0.4Te)_1−x (0.8 ≤ x ≤  1.0) were prepared by hot pressing, and the effect of MnTe and SnTe contents on thermoelectric and mechanical properties of GeTe was investigated. The maximum dimensionless figure of merit ZT of the prepared materials is 1.57 in the temperature range from 720 K to 770 K for x = 0.15. Niobium was added to the quasiternary GeTe-based materials to suppress creep without degradation of thermoelectric properties. The distortion of the material with added Nb was less than 0.4% under experimental conditions of 100 N load at 873 K for 100 h. The favorable thermoelectric properties of these materials are accompanied by their stability in long-term use and the possibility of widening the service temperature range as a result of decreasing their phase-transition temperature T _c.     

Effects of Nanoparticle Size on the Thermoelectric and Mechanical Properties of Skutterudite Nanocomposites

Nano-Co₄Sb_11.5Te_0.5/Co₄Sb_11.5Te_0.5 composites with different nanoparticle sizes and contents were obtained by ultrasonic dispersion followed by ball-milling and spark plasma sintering (SPS) processes. It was found that the nanoparticles obviously grew in size after SPS; most of them were larger than 200 nm in the 5%50 h and 10%50 h samples, while they were 100 nm to 200 nm in the 3%100 h and 5%100 h samples. The thermoelectric (TE) and mechanical properties of the nanocomposites with different sizes and contents were then characterized. Our results show that the TE properties were not noticeably affected, while the flexural strength and fracture toughness increased remarkably with the nanoparticle content, and the nanoparticle size had a notable effect on the mechanical properties of the nanocomposites; that is, the smaller the nanoparticles, the greater their reinforcing and toughening effects.     

Thermoelectric properties of Ce x Nd y Co4Sb12 skutterudites

Experimental results of studying the thermoelectric properties of Co₄Sb₁₂, Ce_0.1Nd_0.5Co₄Sb₁₂, and Ce_0.5Nd_0.1Co₄Sb₁₂ prepared by induction melting are presented. The thermoelectric figure of merit ZT of the studied Co₄Sb₁₂ is approximately two times higher than ZT of unfilled skutterudites prepared by the conventional solid-phase synthesis method. The figure of merit of Ce_0.1Nd_0.5Co₄Sb₁₂ and Ce_0.5Nd_0.1Co₄Sb₁₂ appears lower than ZT of Co₄Sb₁₂ due to the presence of an impurity phase of metal antimony in the first two samples. It is assumed that the thermoelectric properties of filled skutterudites can be significantly improved by optimizing the induction melting method.

     

High-Temperature Oxidation Behavior of Filled Skutterudites Yb y Co4Sb12

The oxidation behavior of filled skutterudites Yb _y Co₄Sb₁₂ was investigated. The overall oxidation of Yb _y Co₄Sb₁₂ consists of two stages. In the first stage, densified oxide layers form on the surface gradually due to the reaction between oxygen and skutterudite at high temperature. In the second stage, microcracks evolve in the oxide layers because of mismatch of coefficient of thermal expansion between the oxide layer and skutterudite matrix, which accelerates the oxidation by providing transport paths for both outside oxygen and inside Sb. The overall oxidation process can be described through the repetitive cycle: dense layer formation → stress release → microcrack formation → self-repair → dense layer formation. The oxidation activation energy of filled skutterudites determined using thermogravimetry method with multi-heating rates is lower than that of unfilled CoSb₃. Moreover, it was found that, with increasing Yb filling fraction, the oxidation activation energy decreases monotonically. Our results suggest that protection against oxidation is necessary for application of filled skutterudites.     

Thermoelectric Properties of Co<Subscript>4</Subscript>Sb<Subscript>12</Subscript> Skutterudite Materials with Partial In Filling and Excess In Additions

The properties of Co₄Sb₁₂ with various In additions were studied. X-ray diffraction revealed the presence of the pure δ-phase of In_0.16Co₄Sb₁₂, whereas impurity phases (γ-CoSb₂ and InSb) appeared for x = 0.25, 0.40, 0.80, and 1.20. The homogeneity and morphology of the samples were observed by Seebeck microprobe and scanning electron microscopy, respectively. All the quenched ingots from which the studied samples were cut were inhomogeneous in the axial direction. The temperature dependence of the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ) was measured from room temperature up to 673 K. The Seebeck coefficient of all In-added Co₄Sb₁₂ materials was negative. When the filler concentration increases, the Seebeck coefficient decreases. The samples with In additions above the filling limit (x = 0.22) show an even lower Seebeck coefficient due to the formation of secondary phases: InSb and CoSb₂. The temperature variation of the electrical conductivity is semiconductor-like. The thermal conductivity of all the samples decreases with temperature. The central region of the In_0.4Co₄Sb₁₂ ingot shows the lowest thermal conductivity, probably due to the combined effect of (a) rattling due to maximum filling and (b) the presence of a small amount of fine-dispersed secondary phases at the grain boundaries. Thus, regardless of the non-single-phase morphology, a promising ZT (S ² σT/κ) value of 0.96 at 673 K has been obtained with an In addition above the filling limit.