High-Performance Continuous-Wave Operation of $lambda sim {hbox {4.6}}~mu{hbox {m}}$ Quantum-Cascade Lasers Above Room Temperature

We report the high-performance continuous-wave (CW) operation of 10-mum-wide quantum-cascade lasers (QCLs) emitting at lambda ~ 4.6mum, based on the GaInAs-AlInAs material without regrowth, in epilayer-up and -down bonding configurations. The operational characteristics of QCLs such as the maximum average power, peak output power, CW output power, and maximum CW operating temperature are investigated, depending on cavity length. Also, important device parameters, i.e., the waveguide loss, the transparency current density, the modal gain, and the internal quantum efficiency, are calculated from length-dependent results. For a high-reflectivity (HR) coated 4-mm-long cavity with epilayer-up bonding, the highest maximum average output power of 633 mW is measured at 65% duty cycle, with 469 mW still observed at 100%. The laser exhibits the maximum wall-plug efficiencies of 8.6% and 3.1% at 298 K, in pulsed and CW operatons, respectively. From 298 to 393 K, the temperature dependent threshold current density in pulsed operation shows a high characteristic temperature of 200 K. The use of an epilayer-down bonding further improves the device performance. A CW output power of 685 mW at 288 K is achieved for the 4-mm-long cavity. At 298 K, the output power of 590 mW, threshold current density of 1.52 kA/cm², and maximum wall-plug efficiency of 3.73% are obtained under CW mode, operating up to 363 K (90degC). For HR coated 3-mm-long cavities, laser characteristics across the same processed wafer show a good uniformity across the area of 21 cm², giving similar output powers, threshold current densities, and emission wavelengths. The CW beam full-width at half-maximum of far-field patterns are 25deg and 46deg for the parallel and the perpendicular directions, respectively.     

Compact Bends for Achieving Higher Integration Densities for LiNbO$_{3}$ Waveguides

A new waveguide platform is demonstrated that allows the bend radii to be substantially decreased for titanium-diffused lithium-niobate (LiNbO₃) waveguides using vertically integrated arsenic-trisulfide (As₂S₃) overlay waveguides. Power is transferred from a Ti-diffused waveguide into the overlay waveguide using tapers, guided by the As₂S₃ waveguide through the S-bend region and transferred back into another Ti-diffused waveguide. This structure also behaves like a polarization beam splitter. We present simulation results as well as measurements to show the feasibility of achieving low loss and reduced bend radii for electrooptic waveguides.     

LiNbO3 waveguide quasi-phase-matching second harmonicgeneration devices with ferroelectric-domain-inverted gratings formed byelectron-beam scanning

The characteristics of the formation of LiNbO₃ ferroelectric-domain-inverted gratings using electron-beam scanning are examined and discussed for application to waveguide quasi-phase-matching second-harmonic-generation (SHG) devices. It is found that the domain inversion tends to occur in segmented regions, and the inversion width is thinner near the crystal surface than inside the crystal. The dependence of the SHG efficiency on the grating structure is examined theoretically. Prototype devices for green and blue light generation have been fabricated and the device performance examined. Normalized SHG efficiencies as high as 50%/W and 70%/W, respectively, are obtained in green and blue light generation devices of 3.3-mm length. The experimental results are compared with the theoretical results     

A theoretical study of a Ti-diffused Er:LiNbO3 waveguidelaser

A detailed theoretical procedure of determining the mode sizes of fundamental mode field distribution in a coaxially pumped Ti-diffused Er:LiNbO₃ waveguide laser has been described. The mode sizes, effective refractive indexes, effective pump area, and coupling efficiency as a function of the initial Ti stripe width W were numerically calculated for the waveguide with 95- and 100-nm initial Ti stripe thicknesses, respectively. The results indicated that the threshold pump power is severely affected by the stripe width, while slope efficiency is hardly changed as W; both show little difference between 95- and 100-nm stripe thickness. In addition, the stimulated emission cross section of Er³⁺ in Er:LiNbO₃ channel waveguide versus the wavelength were calculated directly from its fluorescence spectra using the β-τ method. Subsequently, threshold pump power and slope efficiency were evaluated     

Efficient Frequency Doubling of a Low-Power Femtosecond Er-Fiber Laser in BiB$_{3}$ O$_{6}$

BiB₃O₆ (BIBO) crystal has been used for efficient second-harmonic generation (SHG) of a low-power femtosecond Er-fiber laser-amplifier system operating at 56 MHz. At the maximum input power of 65 mW, an internal conversion efficiency of 23% was achieved for SHG at 782 nm, with a pulse duration of 64 fs. A comparison with beta-BaB₂O₄ reveals superior properties of BIBO for such ultrashort-pulse ultra-broadband SHG.     

Efficient second harmonic generation of a diode-laser-pumped CWNd:YAG laser using monolithic MgO:LiNbO3 external resonantcavities

56% efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO₃. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial mode 532-nm radiation from an input of 52.5 mW     

Coupled-mode analysis of second harmonic generation in the form ofCerenkov radiation from a channel optical waveguide

Optical second-harmonic generation (SHG) in the form of Cerenkov radiation from a channel waveguide is analyzed by a coupled-mode theory. A simple formula is given which expresses the SHG efficiency in terms of waveguide and optical nonlinear parameters and by which one can simulate the radiation pattern of SHG. Computational examples are plotted for LiNbO₃ crystals and reasonably agree with reported results. The analysis shows that the efficiency could be increased significantly if the sign of a d-constant in a substrate were modulated with a proper period     

Reliable Low-Cost Fabrication of Low-Loss $hbox{Al}_{2}hbox{O} _{3}{:}hbox{Er}^{3+}$ Waveguides With 5.4-dB Optical Gain

A reliable and reproducible deposition process for the fabrication of Al₂O₃ waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at ~ 5 nm/min deposition rate and exhibit excellent thickness uniformity within 1% over 50times50 mm² area and no detectable OH^- incorporation. For applications of the Al₂O₃ films in compact, integrated optical devices, a high-quality channel waveguide fabrication process is utilized. Planar and channel propagation losses as low as 0.1 and 0.2 dB/cm, respectively, are demonstrated. For the development of active integrated optical functions, the implementation of rare-earth-ion doping is investigated by cosputtering of erbium during the Al₂O₃ layer growth. Dopant levels between 0.2-5times10²⁰ cm^-3 are studied. At Er³⁺ concentrations of interest for optical amplification, a lifetime of the ⁴I_13/2 level as long as 7 ms is measured. Gain measurements over 6.4-cm propagation length in a 700-nm-thick Al₂O₃:Er³⁺ channel waveguide result in net optical gain over a 41-nm-wide wavelength range between 1526-1567 nm with a maximum of 5.4 dB at 1533 nm.     

W波段准光模式变换器的设计

准光模式变换器是大功率输出回旋管的关键部件.采用高转换效率的准光模式变换器可以横向输出电磁波,增大收集极的尺寸,提高回旋管的输出功率,提高整管效率.该文设计的回旋管内置准光模式变换器由Denisov辐射器天线和四个反射镜组成,输入频率为94GHz,模式为TE_6,2模.采用耦合波理论分析和优化了Denisov辐射器内的场分布,并根据矢量绕射理论编制数值模拟程序计算了各个反射镜上的场分布,其输出功率转换效率达97.2%.利用三维全波仿真软件feko6.0进行对比分析,最后加工所设计的结构并内置于回旋振荡管进行热测实验,结果表明其输出场分布与理论计算结果基本一致.     

RF and Logic Performance Improvement of $ hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}/hbox{InAs}/hbox{In}_{0.7}hbox{Ga}_{0.3}hbox{As}$ Composite-Channel HEMT Using Gate-Sinking Technology

Eighty-nanometer-gate In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250degC for 3 min, the device exhibited a high g_m value of 1590 mS/mm at V_d = 0.5 V, the current-gain cutoff frequency f_T was increased from 390 to 494 GHz, and the gate-delay time was decreased from 0.83 to 0.78 ps at supply voltage of 0.6 V. This is the highest f_T achieved for 80-nm-gate-length HEMT devices. These superior performances are attributed to the reduction of distance between gate and channel and the reduction of parasitic gate capacitances during the gate-sinking process. Moreover, such superior performances were achieved through a very simple and straightforward fabrication process with optimal epistructure of the device.     

Finite element analysis of LiNbO3 waveguides with Si orSi/SiO2 overlay

LiNbO₃ waveguides with Si overlays are emerging as a basic building block for a variety of integrated-optic components, including modulators, high-efficiency gratings, and narrowband WDM filters. However, the development and optimization of these devices are, in large part, hindered by the lack of understanding of the specifics of the Si-on-LiNbO₃ structure which appear to differ dramatically from those of the Si and LiNbO₃ waveguides, considered separately. In this work, we provide a specific insight into the waveguiding properties of vertically stacked Si-on-LiNbO₃ waveguides. In particular, we present a detailed theoretical analysis of the effect of the Si film on the modal characteristics (propagation constant and field distribution) of the structure. The vectorial finite element method (VFEM) is used to numerically investigate a step-index and graded-index single-mode channel waveguide in LiNbO₃, with a Si or Si/SiO₂ multimode overlay. We show that for ~70% of all Si thicknesses, in the range from 0 to 1.6 μm, the highest order normal mode of the entire structure has more than 99.9% of the total energy confined in the LiNbO₃ region, i.e., beneath the Si overlay. This fact is quite intriguing given the fact a planar Si layer of submicron thickness on bulk LiNbO₃ is already multimoded. Furthermore, we show that the effective mode index of the structure is considerably modified compared to that of the LiNbO₃ waveguide while the propagation loss is, on the other hand, practically unaffected (~0.3 dB/cm) even in the presence of the lossy Si film, as confirmed by our previous experimental results. Evidently, large modulation of the effective index and low-loss propagation provide an ideal combination of properties suitable for the fabrication of high-reflectance corrugated waveguide gratings, essential for a number of practical devices, in particular, WDM filters     

Third harmonic generation of Nd:YAG laser light in periodicallypoled LiNbO3 waveguide

The authors propose and first demonstrate an LiNbO₃ waveguide device with cascading quasi-phase-matched second harmonic generation and quasi-phase-matched sum-frequency generation for generation of a third harmonic wave. Ultraviolet light of 355 nm wavelength, which was the shortest value ever reported for LiNbO₃ waveguide wavelength-convertors, was obtained with Nd:YAG laser light     

Electrical Characteristics of Passivated Pseudomorphic HEMTs With $hbox{P}_{hbox{2}}hbox{S}_{hbox{5}}/(hbox{NH}_{hbox{4}})_{hbox{2}}hbox{S}_{hbox{X}}$ Pretreatment

This paper elucidates the dc, pulse I-V, microwave, flicker noise, and power properties of AlGaAs/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) after various ex situ sulfur pretreatments. The pHEMTs were pretreated with NH₄OH, (NH₄)₂S_X, and P₂S₅/(NH₄)₂S_X solutions before SiO₂ passivation to reduce the GaAs native oxide-related surface states. Stable phosphorus oxides and sulfur bound to the Ga and As species can be efficiently obtained using P₂S₅/(NH₄)₂S_X pretreatment; therefore, the leakage current in pHEMT was reduced following this process. Atomic force microscopy measurements indicated that the phosphorus oxides formed by P₂S₅/(NH₄)₂S_X treatment also provided a better surface roughness than obtained following traditional (NH₄)2S_X-only pretreatment, reducing mobility degradation after sulfur pretreatment. Based on the dc and 1 mus pulse I-V measurement results, P₂S₅/(NH₄)₂S_X-treated pHEMT exhibited very similar I_ds trends, especially at high currents; however, NH₄OH, (NH₄)₂S_X treatments clearly reduced the current upon pulse measurement because of the presence of surface traps. Hence, this novel pretreatment method has great potential for highly linear microwave power transistor applications.     

Simulations of Ti:LiNbO3 waveguide modulators-acomparison of simulation techniques

The modulation characteristics of several Ti:LiNbO₃ waveguide devices were simulated. For the electrooptic effect, both a spatially dependent and a uniform modulation field were considered. Both the three-dimensional beam propagation method and the two-dimensional beam propagation method with effective index were used in the simulations. The results of simulations and measured device performance are compared     

BPM design optimization and experimental improvement of a Ti:LiNbO3 ridge waveguide linear-mode confinement modulator

A theoretical device model for a ridge waveguide mode confinement modulator on z-cut LiNbO₃, based on the beam propagation method (BPM), is used for design improvement purposes. Following this design technique, a fabricated device yielded a much improved performance of 97% modulation depth with a drive voltage of only ±8 V, in good agreement with the design calculations. The improvement in the experimental performance of this modulator is mainly due to a reduced buffer layer thickness and an optimization of the ridge height. A theoretical analysis based on an accurate effective-index model combined with the BPM is used to predict the performance of the device     

$hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Abstract-We report Al₂O₃Zln_0.53Ga_0.47As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n⁺ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In_0.53Ga_0.47As channel with an In_0.4sAl_0.52As back confinement layer and the n⁺⁺ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I_D = 0.95 mA/mum current density at V_GS = 4.0 V and g_m = 0.45 mS/mum peak transconductance at V_DS = 2.0 V.     

Characterizing Fluorine-Ion Implant Effects on Poly-Si Thin-Film Transistors With ${hbox{Pr}}_{2}{hbox{O}}_{3}$ Gate Dielectric

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) with high-k Pr₂O₃ as gate dielectric is investigated for the first time. Using the Pr₂O₃ gate dielectric can obtain a high gate capacitance density and thin equivalent-oxide thickness, exhibiting a greatly enhancement in the driving capability of TFT device. Introducing fluorine ions into the poly-Si film by fluorine ion implantation technique can effectively passivate the trap states in the poly-Si film and at the Pr₂O₃/poly-Si interface to improve the device electrical properties. The Pr₂O₃ TFTs fabricated on fluorine-implanted poly-Si film exhibit significantly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, higher field-effect mobility, lower off-state leakage current, and higher on/off current ratio, as compared with the control poly-Si Pr₂O₃ TFTs. Also, the incorporation of fluorine ions also improves the reliability of poly-Si Pr₂O₃ TFTs against hot-carrier stressing, which is attributed to the formation of stronger Si-F bonds. Furthermore, superior threshold-voltage rolloff characteristic is also demonstrated in the fluorine-implanted poly-Si Pr₂O₃ TFTs. Therefore, the proposed scheme is a promising technology for high-performance and high-reliability solid-phase crystallized poly-Si TFT.     

Lithium–Niobate Channel Waveguide for the Realization of Long-Period Gratings

We propose a special lithium-niobate (LiNbO₃) single-mode waveguide for the realization of long-period gratings, which consists of a channel core embedded in a thin slab cladding. We fabricated the waveguide on a z-cut LiNbO₃ substrate with a two-step proton-exchange process and demonstrated its suitability for grating application with a number of removable photoresist long-period gratings deposited on the waveguide surface. The waveguide fabrication process and the LiNbO₃ waveguide structure could be further explored for the development of electrooptic gratings for high-speed applications.     

High-Power 1.06-$mu{hbox {m}}$ Near-Diffraction-Limited Planar Tapered Amplifier Injected With Seed Light Through a Fiber Biconical Microlens

We designed a 1.06-mum single-quantum-well (SQW) InGaAs/AlGaAs planar tapered amplifier that was injected with seed light of a fiber Bragg grating stabilized laser diode through a fiber biconical microlens. To increase the amplifier output, the microlens with approximately 3- and 11-mum radii on vertical and horizontal axes, respectively, provides high coupling efficiency between the laser diode and the amplifier. The microlens also controls propagation in the tapered gain area to suppress the filament formation. In addition, the small radii of the microlens reduce near-end reflection at the amplifier input to prevent parasitic laser oscillation of the amplifier. We demonstrated near-diffraction-limited output of 5.5 W with the beam quality factor M² of 1.5 by using a 3-mm-long amplifier having an optical confinement factor of 1.2%.     

Novel Numerical Method for the Analysis and Synthesis of the Fields in Highly Oversized Waveguide Mode Converters

A numerical method for the analysis of the fields in highly oversized waveguides is proposed in this paper. This method allows the simulation of the fields on waveguide walls with arbitrary surface deformations in the case that the waveguide is highly oversized, and the wall deformations are shallow and smooth. Combined with the analysis method, an algorithm has been developed for synthesizing the waveguide wall to provide a desired field distribution. As an example, a 309.6-mm-long waveguide launcher has been designed for a 170-GHz coaxial-cavity gyrotron to transform the ${rm TE}_{34,19}$ cavity mode to a fundamental Gaussian distribution. An efficiency of transformation to the desired fundamental Gaussian mode of 96.3% has been obtained at the launcher aperture, whereas the transformation efficiency is just 86% using a conventional dimpled-wall launcher with a length of 660 mm.