CuInS2/In2S3 thin film solar cell using spray pyrolysis technique having 9.5% efficiency

Copper indium sulfide (CuInS₂)/In₂S₃ solar cells were fabricated using spray pyrolysis method and high short circuit current density and moderate open circuit voltage were obtained by adjusting the condition of deposition and thickness of both the layers. Consequently, a relatively high efficiency of 9.5% (active area) was obtained without any anti-reflection coating. The cell structure was ITO/CuInS₂/In₂S₃/Ag. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell.     

a-C:H absorber layer for solar cells matched to solar spectrum

An a-C:H-based absorber layer for photovoltaic application was fabricated by a DC PECVD. The stepped voltage biasing of the deposition process makes it possible to tailor the bandgap of the manufactured layers and match them to the solar spectrum. Such system can be used as intrinsic layer in p–i–n solar cells as well as in converter solar cells.     

Spray pyrolysis of barrier layers for flexible thin film solar cells on steel

Thin film chalcopyrite solar cells grown on light-weight, flexible substrates are an appealing product. An insulating barrier layer is a requisite for flexible steel substrates to protect the chalcopyrite absorber layer from in-diffusion of iron and also to isolate the solar module, electrically, from the metal substrate. Spray pyrolysis is presented here as a means to deposit an aluminium oxide barrier layer. Optimised spray deposition conditions are investigated and subsequent solar cell results are presented. Resistivity measurements in conjunction with thermography allow assessment of the barrier layer’s insulating properties and occurrence of pin-holes in the layer. Resulting Cu(In,Ga)Se₂ cells, with a barrier layer, reach an efficiency of 14.4%.     

Cu(In,Ga)Se2 thin film solar cells with buffer layer alternative to CdS

Progress in fabricating Cu(In,Ga)Se₂ (CIGS) solar cells with ZnS(O,OH) buffer layers prepared by chemical bath deposition (CBD) is discussed in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell. Total-area conversion efficiency of up to 18.6% has been reported previously using ZnS(O,OH) prepared by CBD. The reported 100 nm CBD ZnS(O,OH) layer was prepared by at least three consecutive depositions, which would make it a relatively expensive replacement for CdS. The recent development of a ZnS(O,OH) layer that enabled to obtain high-efficiency devices using a single-layer CBD is reported in this paper. A 14.4%-efficient device is obtained by using one-layer CBD ZnS(O,OH) on commercial-grade Shell Solar Cu(In,Ga)(S,Se)₂ (CIGSS) absorber and an up to 17.4% device is obtained by using two-layer CBD ZnS(O,OH) on an NREL CIGS absorber.     

Influence of CdS window layer on 2-μm thick CdS/CdTe thin film solar cells

Influence of the CdS window layer on the PV performances of 2-μm thick CdS/CdTe solar cells has been studied as a function of the CdS thickness, d_CdS. With a reduction of d_CdS from 114 to 95 nm, J_SC increases due to an increase in blue response. While, at d_CdS<85 nm, the conversion efficiency largely decreases due to a decrease in V_OC and FF. The deterioration of the crystallinity of CdTe due to a decrease in the sulfur composition x of the CdTe_1−xS_x mixed-crystal layer is concluded to be the most possible mechanism for the large decreases in V_OC and FF.     

Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer

A comparative study of the cell performance of CIGS thin-film solar cells fabricated using ZnO:Al and ZnO:B window layers has been carried out. ZnO:B films were deposited by RF magnetron sputtering using an undoped ZnO target in a B₂H₆–Ar gas mixture. The short-circuit current (J_sc) was found to improve upon the replacement of the ZnO:Al layer with ZnO:B layers. This improvement in J_sc is attributed to an increase in quantum efficiency due to the higher optical transmission of the ZnO:B layer in the near-infrared region. The best cell fabricated with a MgF₂/ZnO:B/i-ZnO/CdS/CIGS/Mo structure yielded an active area efficiency of 18.0% with V_oc=0.645 V, J_sc=36.8 mA/cm², FF=0.76, and an active area of 0.2 cm² under AM 1.5 illumination.     

A new technique for large-area thin film CdS/CdTe solar cells

The atmospheric pressure CSS method has been developed as a reproducible and efficient process. Thin film CdTe grown under atmospheric pressure has a rough surface morphology. The density of carbon black powder in the graphite carbon paste for screen printing is a key factor in reducing the series resistance of the device with rough surface CdTe. Using graphite carbon paste with 7 wt% carbon black powder has resulted in cells with a relatively low back contact resistance. A highly efficient large-area CdS/CdTe solar cell (11.0%, 5327 cm²) sub-module has been fabricated using the new technique.     

Organic solar cells with 2-Thenylmercaptan/AU self-assembly film as buffer layer

The interface between an electrode and the organic active layer is an important factor in organic solar cells (OSCs) that influences the power conversion efficiency (PCE). In this report, a buffer layer of 2-thenylmercaptan/Au self-assembly film is introduced into OSCs as a substitute for the poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT: PSS) layer. The electrode/active layer interface is meliorated by Au-S coordinate bond of self assembly after applying this buffer layer. The series resistance reduces from 20 Ω cm² in a device based on PEDOT:PSS to 10.2 Ω cm². Correspondingly, the fill factor (FF) increases from 0.50 to 0.64. Moreover, due to the dipole of this self-assembled layer, the open circuit voltage (V_oc) also increases slightly from 0.54 V to 0.56 V and the PCE reaches 2.5%.     

Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface sulfurization

Surface sulfurization was developed as a technique for fabricating efficient ZnO : Al/CdS/graded Cu(In,Ga)(S,Se)₂/ Mo/glass solar cells. Prior to the sulfurization, single-graded Cu(In,Ga)Se₂ (CIGS) films were deposited by a multi-stage process. The sulfurization of CIGS films was carried out using a H₂S---Ar mixture at elevated temperatures. The crystallographic and compositional properties of the absorber layers were investigated by XRD, SEM and AES analyses. After sulfurization, sulfur atoms were substituted for selenium atoms at the surface layer of CIGS films to form a Cu(In,Ga)(S,Se)₂ absorber layer. The diffusion of sulfur depends strongly on the grain structure of CIGS film. The cell efficiency of the 8–11% range before sulfurization was improved dramatically to 14.3% with V_oc = 528 mV, J_sc = 39.9 mA/cm² and FF = 0.68 after the sulfurization process.     

Back electrode formation for poly-Si thin film solar cells on glass having AIC-grown seeding layer

Various conductive materials (Al, Mo and TiN) were deposited onto glass substrates to evaluate whether poly-Si seed layers can be formed on such substrates by means of Al-induced crystallisation (AIC) of a-Si at low temperature around 450°C. The material located between the glass and the poly-Si film serves as the back electrode of a substrate-type thin-film solar cell configuration. The outcome of the investigation is that Mo is found to be not compatible with the AIC process. In contrast, Al and TiN showed moderate to good compatibility. TiN is the only viable choice for high-temperature applications (>540°C). Al has satisfactory back electrode properties whereas TiN has a medium high resistivity (120 μΩ cm) and an estimated low back reflectance at the near-infrared wavelengths critical for light trapping.     

Superstrate-type CuInSe2-based thin film solar cells by a low-temperature process using sodium compounds

Superstrate-type solar cells with a Au/CuInSe₂(CIS)/In_xSe_y,/ZnO : Al/glass structure were investigated. The CIS films were deposited by coevaporation method with intentionally incorporated Na₂S at a substrate temperature of 350°C. Even at relatively low substrate temperatures, sodium compounds enhanced the (1 1 2) preferred orientation of the chalcopyrite structure, and also improved the cell performance. The In_xSe_y buffer layers disappeared after CIS deposition by interdiffusion. Preliminary cells yielded an efficiency of 7.5% with V_oc, = 430 mV, J_sc = 29.4 mA/cm² and FF = 0.60. The light soaking and forward bias effects were observed for these cells.     

A study on the improved growth rate and morphology of chemically deposited ZnS thin film buffer layer for thin film solar cells in acidic medium

Zinc sulfide (ZnS) thin films have been prepared by chemical bath deposition method with improving growth rate and morphology using the mixed complexing agents of ethylenediamine tetra-acetate disodium salt (Na₂EDTA) and hexamethylenetetramine (HMTA). The effects of HMTA quantity on the morphological, compositional, optical, structural and electrical properties of ZnS thin films with fixed Na₂EDTA concentration have been investigated. ZnS thin films were deposited on glass substrates using aqueous solutions containing zinc acetate dehydrate and thioacetamide in acidic medium (pH 4). Field emission scanning electron microscopy results show that the morphology of a deposited ZnS thin film using HMTA as a complexing agent is rough. However, very uniform and smooth ZnS thin films are obtained using mixed complexing agents of Na₂EDTA and HMTA. The growth rate and root mean square of ZnS thin films are improved with increasing HMTA quantities. X-ray diffraction patterns show that all the ZnS thin films are grown as a hexagonal structure without secondary phase (ZnO) regardless of HMTA quantity. Optical band gap energy of ZnS thin films deposited using mixed complexing agents increase from 3.75 to 3.87 eV with increasing quantity of HMTA.     

Preparation of In2O3:F thin films grown by spray pyrolysis technique

Transparent conducting fluorine doped indium oxide (In₂O₃:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (T_s=300 °C) showed no peaks of In₂O₃:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly [400]. For the 4500 Å thick In₂O₃:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.     

CVD of CuGaSe2 for thin film solar cells with various transport agents

Chemical vapor deposition (CVD) in an open tube system was employed to deposit single-phase CuGaSe₂ thin films on plain and Mo-coated glass substrates. The use of HCl and ternary CuGaSe₂ source material resulted in non-stoichiometric volatilization of the source material. The use of binary source materials – Cu₂Se and Ga₂Se₃ – in combination with I₂ and HCl as the respective transport agents yielded single-phase CuGaSe₂ thin films while the source materials were volatilized stoichiometrically. Mo/CuGaSe₂/CdS/ZnO devices were fabricated from these samples exhibiting an open-circuit voltages up to V_oc=853 mV.     

Porous TiO2 thin films synthesized by a spray pyrolysis deposition (SPD) technique and their application to dye-sensitized solar cells

Titanium dioxide (TiO₂) thin films were synthesized on glass substrates from titanium(IV)oxy acetylacetonate 2-butanol solution by a spray pyrolysis deposition (SPD) technique. The films consisted of TiO₂ leaflets and showed the oriented growth along the (2 0 0) direction. The surface area of the film was successfully increased by adding a small amount of aluminum(III) acetylacetonate (AA) in the source solution. This is because AA sublimates easily during the film formation to leave many pores within the film. A dye-sensitized solar cell was constructed with the TiO₂ film which was deposited on the fluorine-doped tin(IV) oxide layer by the SPD technique. The conversion efficiency of the cell was effectively enhanced as high as 3.2% at AA content of 0.6 at% in the source solution, attributing to the fact that the amount of a dye anchored on the surface of TiO₂ layer was the highest at this AA content. Although the conversion efficiency is relatively low, this finding leads to the possibility of an industrial production of a dye-sensitized solar cell in the near future.     

Novel device structure for Cu(In,Ga)Se2 thin film solar cells using transparent conducting oxide back and front contacts

Cu(In_1−xGa_x)Se₂ (CIGS)-based thin film solar cells fabricated using transparent conducting oxide (TCO) front and back contacts were investigated. The cell performance of substrate-type CIGS devices using TCO back contacts was almost the same as that of conventional CIGS solar cells with metallic Mo back contacts when the CIGS deposition temperatures were below 500 °C for SnO₂:F and 520 °C for ITO. CIGS thin film solar cells fabricated with ITO back contacts had an efficiency of 15.2% without anti-reflection coatings. However, the cell performance deteriorated at deposition temperatures above 520 °C. This is attributed to the increased resistivity of the TCO’s due to the removal of fluorine from SnO₂ or undesirable formation of a Ga₂O₃ thin layer at the CIGS/ITO interface. The formation of Ga₂O₃ was eliminated by inserting an intermediate layer such as Mo between ITO and CIGS. Furthermore, bifacial CIGS thin film solar cells were demonstrated as being one of the applications of semi-transparent CIGS devices. The cell performance of bifacial devices was improved by controlling the thickness of the CIGS absorber layer. Superstrate-type CIGS thin film solar cells with an efficiency of 12.8% were fabricated using a ZnO:Al front contact. Key techniques include the use of a graded band gap Cu(In,Ga)₃Se₅ phase absorber layer and a ZnO buffer layer along with the inclusion of Na₂S during CIGS deposition.     

Fabrication of large area nanorod like structured CdS photoanode for solar H2 generation using spray pyrolysis technique

Large area nanorod like structured CdS films (9 × 9 cm²) were deposited on the FTO glass substrate using simple and economic spray pyrolysis deposition technique for photoelectrochemical (PEC) hydrogen production. With an intention of electrode scaling-up, the deposition area of photoanode was varied to evaluate its effect on the PEC hydrogen generation capability. High photocurrent of 5 mA has been achieved from the PEC active area of 37.5 cm². Its unit area (1 cm²) counterpart yielded Solar-to-Hydrogen (STH) conversion efficiency of 0.20% at a bias of 0.2 V vs Ag/AgCl using sacrificial reagents under solar simulator (AM1.5) with 80 mW/cm² irradiance. The 500 nm thick film exhibiting uniformly distributed nano-rod features yielded 3-times more photocurrent, as well as hydrogen evolution than other films. It exhibited an enhanced photo-activity as indicated by the higher IPCE values (5–9%) in the wavelength range of 450–550 nm. It exhibited superior optical properties (E_g ∼2.4 eV), and formation of high crystallinity hexagonal CdS phase with space group P63MC. The superior performance of the photoanode is attributed to the nanostructured morphology acquired under optimized spray pyrolysis conditions. Large area photoanodes showed unaltered photo-activity indicating the homogeneity in the film properties even in scaled-up version.     

Semiconductor-sensitized solar cells based on nanocrystalline In2S3/In2O3 thin film electrodes

A possibility of semiconductor-sensitized thin film solar cells have been proposed. Nanocrystalline In₂S₃-modified In₂O₃ electrodes were prepared with sulfidation of In₂O₃ thin film electrodes under H₂S atmosphere. The band gap (E_g) of In₂S₃ estimated from the onset of the absorption spectrum was approximately 2.0 eV. The photovoltaic properties of a photoelectrochemical solar cell based on In₂S₃/In₂O₃ thin film electrodes and I⁻/I₃⁻ redox electrolytes were investigated. This photoelectrochemical cell could convert visible light of 400–700 nm to electron. A highly efficient incident photon-to-electron conversion efficiency (IPCE) of 33% was obtained at 410 nm. The solar energy conversion efficiency, η, under AM 1.5 (100 mW cm⁻²) was 0.31% with a short-circuit photocurrent density (J_sc) of 3.10 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.26 V, and a fill factor ( ff ) of 0.38.     

Optoelectronic properties of chemically deposited Bi2S3 thin films and the photovoltaic performance of Bi2S3/P3OT solar cells

Thin films of bismuth sulfide (Bi₂S₃), prepared on conductive tin-doped indium oxide (ITO)-glass substrates by chemical deposition showed a variation of optical band gap with thickness: 1.8 eV for a 50 nm film (deposited at 40 °C for 30 min) to 1.5 eV for a 200 nm film deposited for 2 h. The electronegativity for Bi₂S₃ compound is 5.3 eV, as estimated from the ionization energy and electron affinity of elemental Bi and S, and thus the electron affinity of chemically deposited Bi₂S₃ film was deduced to be 4.5 eV. In the energy level analysis of ITO/Bi₂S₃/P3OT/Au structure, Bi₂S₃ was established as an electron acceptor. To produce ITO/Bi₂S₃/P3OT/Au solar cell structures, poly3-octylthiophene (P3OT), prepared in the laboratory was dissolved in toluene and was drop-cast on the Bi₂S₃ film and a gold film was thermally evaporated. Under 100 mW/cm² tungsten-halogen irradiation incident from the ITO-side, the cell using a Bi₂S₃ film with thickness of 50 nm has the highest open circuit voltage (V_oc) of 440 mV and short-circuit current density (J_sc) of 0.022 mA/cm². The addition of a CdS thin film (90 nm) between ITO and B₂S₃ would increase V_oc to 480 mV, and J_sc to 0.035 mA/cm². The role of surface morphology and optoelectronic properties of the Bi₂S₃ film in the photovoltaic performance of the junction is discussed.     

A hybridized electron-selective layer using Sb-doped SnO2 nanowires for efficient inverted polymer solar cells

We developed a novel hybridized electron-selective layer comprised of Sb-doped SnO₂ nanowires for efficient inverted polymer solar cells. A device containing Sb-doped SnO₂ nanowires with 0.1 mg/ml concentration showed a significant increase in power conversion efficiency to 3.23% with an enhanced fill factor, compared to a reference device without the nanowires (2.89%). Such improvement is attributed to the high electrical conductivity of one-dimensional Sb-doped SnO₂ nanowires and to the good light transmittance through the wide band gap of tin oxide. Also the surface morphology of the hybridized electron-selective layer is made denser and improved by incorporating one-dimensional Sb-doped SnO₂ nanowires, resulting in the enhancement of the photovoltaic performance.