Bifacial transparent solid-state dye-sensitized solar cell with sputtered indium-tin-oxide counter electrode

In this study, we report a solid state dye-sensitized solar cell (SSDSC) made with a transparent ITO film as a counter electrode using the sputtering technology. For the first time, a bifacial transparent SSDSC is realized and irradiated from FTO and ITO side. The SSDSCs give short circuit photocurrent density (J_sc) of 4.16 mA cm^?2, open circuit voltage (V_oc) of 0.74 V, and fill factor (FF) of 0.64, corresponding to the photoelectric conversion efficiency of 1.96% from FTO side illumination (AM 1.5G, 100 mW cm^?2). Moreover, it is found that J_sc of SSDSCs (2.85 mA cm^?2) when irradiated from ITO side is less than that from FTO side. This result is because of the cut-off of incident photons in the blue region by the ITO film and the light screening effect by the hole transport material (HTM) absorption. Our results demonstrate the possibility of production scalable sputtering process for SSDSCs electrodes fabrication and pave the avenue for tandem design application which requires a transparent intermediate layer for interconnection.     

Hydrothermal preparation and electrochemical properties of Gd3+ and Bi3+, Sm3+, La3+, and Nd3+ codoped ceria-based electrolytes for intermediate temperature-solid oxide fuel cell

The structure, the thermal expansion coefficient, electrical conductivities of Ce_0.8Gd_0.2?xM_xO_2?δ (for M: Bi, x = 0–0.1, and for M: Sm, La, and Nd, x = 0.02) solid solutions, prepared for the first time hydrothermally, are investigated. The uniformly small particle size (28–59 nm) of the materials allows sintering of the samples into highly dense ceramic pellets at 1300–1400 °C. The maximum conductivity, σ_700 °C around 4.46 × 10^?2 S cm^?1 with E_a = 0.52 eV, is found at x = 0.1 for Bi-co-doping. Among various metal-co-dopings, for x = 0.02, the maximum conductivity, σ_700 °C around 2.88 × 10^?2 S cm^?1 with E_a = 0.67 eV, is found for Sm-co-doping. The electrolytic domain boundary (EDB) of Ce_0.8Gd_0.1Bi_0.1O_2?δ is found to be 1.2 × 10^?19 atm, which is relatively lower than that of the singly doped samples. The thermal expansion coefficients, determined from high-temperature X-ray data are 11.6 × 10^?6 K^?1 for the CeO₂, 12.1 × 10^?6 K^?1 for Ce_0.8Gd_0.2O_2?δ, and increase with co-doping to 14.2 × 10^?6 K^?1 for Ce_0.8Gd_0.18Bi_0.02O_2?δ. The maximum power densities for the single cell based on the codoped samples are higher than that of the singly doped sample. These results suggest that co-doping can further improve the electrical performance of ceria-based electrolytes.     

Electrosynthesis of Bi2O3 thin films and their use in electrochemical supercapacitors

Bismuth oxide (Bi₂O₃) thin films are grown on copper substrates at room temperature by electrodeposition from an aqueous alkaline nitrate bath. The usefulness of electrochemically deposited Bi₂O₃ for electrochemical supercapacitors is proposed for the first time. The supercapacitor properties of Bi₂O₃ electrode are studied in aqueous NaOH solution. The Bi₂O₃ electrode exhibits very good electrochemical supercapacitive characteristics as well as stability in aqueous NaOH electrolyte. The effect of electrolyte concentration, scan rate, and number of cycles on the specific capacitance of Bi₂O₃ electrodes has been studied. The highest specific capacitance achieved with the electrodeposited Bi₂O₃ films is 98 F g⁻¹.     

Organic thin-film solar cell employing a novel electron-donor material

A highly efficient organic thin-film solar cell based on a heterojunction structure employing a novel electron-donor (ED) material, tetraphenyldibenzoperiflanthene (DBP), has been demonstrated for the first time. An organic photovoltaic (OPV) cell with 0.033-cm² active area, comprising DBP as an ED layer, fullerene C₆₀ as an electron-acceptor (EA) layer, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as an exciton-blocking (EB) layer, has exhibited an open-circuit voltage (V_oc) of 0.92 V, a short-circuit current density (J_sc) of 6.3 mA/cm² and a conversion efficiency of 3.6% at 100-mW/cm² simulated AM1.5G sunlight. Meanwhile, those of a conventional cell employing copper phthalocyanine (CuPc) for an ED layer are 0.51 V, 4.3 mA/cm², and 1.4%, respectively. The high V_oc and J_sc of the DBP-based cell is attributed to the DBP's highest occupied molecular orbital (HOMO) level 5.5 eV and the effective light absorption, respectively.     

Improvement of polymer/fullerene solar cells by controlling geometry of the ITO substrate surface

We have found that the short-circuit current, J_sc, of polymer/fullerene [RR-P3HT/C₆₀] solar cells has a clear dependence on the surface roughness of the ITO/glass substrate. We prepared an ITO surface with an average roughness, R_a, of 0.7–11 nm by chemical etching. At first J_sc increases with the increase in ITO surface roughness and then gradually decreases. The maximum performance was obtained at R_a≈4 nm. J_sc is also high with a very flat surface of R_a=0.7 nm. This feature can be attributed to the trade-off between the increase in absorption light path length and film-quality deterioration.     

Synthesis of colloidal CuInSe2 nanocrystals films for photovoltaic applications

We synthesise 7 nm CuInSe₂ nanocrystals of low size and shape dispersion using copper(I) chloride, indium(III) chloride and selenourea as the precursors. The obtained nanocrystals are deposited on indium tin oxide (ITO) covered glass by means of layer-by-layer dip-coating. After each deposition step, a ligand exchange process with 1,2-ethanedithiol (EDT) is carried out. The new ligands interconnect the nanocrystals, which therefore become insoluble during subsequent dip-coating steps. Furthermore, the small EDT molecules replace the long insulating alkyl chains of the oleylamine stabilizing ligands used during the synthesis. I/V measurements of a 1 μm thick film sandwiched between the ITO substrate and an aluminium electrode show a current density of 1 μA/cm² at 1 V in the dark, which increases to 16 μA/cm² under illumination with white light.     

Chemically grown Bi2S3 nanorod films for hydrogen evolution

Bi₂S₃ nanorod films were grown on ITO-coated glass substrates through chemical bath deposition (CBD) and annealing in a sulfur atmosphere. The as-deposited films were amorphous/nanocrystalline, with a particle size of 20 nm and a direct optical band gap of 1.87 eV. Upon annealing at 350 °C, the films exhibited a nanorod morphology with a length of 300 nm. Further increasing the temperature from 400 to 450 °C resulted in an increased diameter of nanorods. The direct optical band gap decreased from 1.68 to 1.47 eV upon increasing the annealing temperature from 350 to 400 °C. Photoelectrochemical (PEC) measurements showed that the nanorod films grown on ITO-coated glass substrates exhibited significantly increased PEC activity owing to their nanorod structures. The Bi₂S₃ nanorod films formed at 400 °C exhibited a maximum photocurrent density of 6.1 mA/cm² at 1 V, which was 2.5 times higher than that of the as-deposited films. The enhancement in the photocurrent density could be due to the effective visible-light absorption of Bi₂S₃ nanorods as a result of the increased crystallinity and decreased band gap. This study demonstrates the synthesis route involving a simple and inexpensive CBD method of Bi₂S₃ nanorod films for the optimized PEC water-splitting applications.     

Effect of ultra-thin polymer membrane electrolytes on dye-sensitized solar cells

In-situ ultra-thin porous poly(vinylidene fluoride-co-hexafluoropropylene) P(VDF–HFP) membranes were prepared by a phase inversion method on TiO₂ electrodes coated with Ru N-719 dye. These membranes were then soaked in the organic liquid electrolyte to form the in-situ ultra-thin porous P(VDF–HFP) membrane electrolytes. Dye-sensitized solar cell (DSC) using the membrane electrolyte exhibited an open-circuit voltage (V_oc) of 0.751 V, a short-circuit current (J_sc) of 16.260 mA cm^?2 and a fill factor (FF) of 0.684 under an incident light intensity of 1000 W m^?2 yielding an energy conversion efficiency (η) of 8.35%. The V_oc, FF and η of the solar cell using the membrane electrolyte increased by about 5.8%, 2.2% and 5.7%, respectively, when compared with the corresponding values of a cell using liquid electrolyte. However, the J_sc decreased by about 2.1%.     

Tuning photocurrent response through size control of CdTe quantum dots sensitized solar cells

The photovoltaic performance of CdTe quantum dots (QDs) sensitized solar cells (QDSSCs) as a function of tuning the band gap of CdTe QDs size is studied. The tuning of band gap was carried out through controlling the size of QDs. Presynthesized CdTe QDs of radii from 2.1 nm to 2.5 nm) were deposited by direct adsorption (DA) technique onto a layer of TiO₂ nanoparticles (NPs) to serve as sensitizers for the solar cells. The characteristic parameters of the assembled QDSSCs were measured under AM 1.5 sun illuminations. The values of current density (J_sc) and overall efficiency (η) increase with decreasing CdTe QDs size, since the lowest unoccupied molecular orbital (LUMO) levels shifts closer to vacuum level, which causes an increase in the driving force. Consequently the electrons’ injections to the conduction band (CB) of TiO₂ NPs become faster. The maximum values of J_sc (1105 μA/cm²) and η (0.190%) were obtained for the smallest CdTe QDs size (2.10 nm). The open circuit voltages (V_oc) varies slightly with the size of the CdTe QDs, however it is only dictated by the CB level of TiO₂ NPs and the VB of the electrolyte. Furthermore, the photocurrent response of the assembled cells to ON–OFF cycles of the illumination indicates the prompt generation of anodic current.     

Advanced materials for the 3D microbattery

Out recent achievements in the development of three-dimensional (3D) thin film microbatteries on silicon and on microchannel plates (MCP) are presented. In such 3D microbatteries, the battery sandwich-like structure, including electrodes, electrolyte and current collectors, is deposited conformally on all available surfaces, thereby utilizing the dead volume of the substrate. Thin-film molybdenum oxysulfide and iron sulfide cathodes were deposited galvanostatically. XRD, XPS and TOF–SIMS characterizations indicated that the submicron thick MoO_yS_z films were amorphous, with the stoichiometry of the films varying with depth. Electrodeposited FeS_x films have an amorphous, network-like porous structure with nanosize particles. A special flow cell for conformal coating of the perforated substrates was designed. A Li/hybrid polymer electrolyte (HPE)/MoO_yS_z-on-Si 3D half cell ran at i_d = i_ch = 10 μA cm⁻² and room temperature for 100 charge/discharge cycles with 0.1%/cycle capacity loss and 100% Faradaic efficiency. A 3D half cell on MCP exhibited 20 times higher capacity than that of a planar half cell with the same footprint.     

Bi2O3–WO3 compounds for photocatalytic applications by solid state and viscous processing

Water-splitting photoelectrochemical cells utilising photocatalysts have the potential to become a significant hydrogen source for fuel cells. Historically, the photocatalytic properties of TiO₂ and other compounds have been carefully investigated, but they suffer from poor energy conversion efficiencies for solar radiation.Inspired by the low bandgaps and high electrical conductivities of WO₃ and Bi₂O₃, this study investigates the suitability of compounds within this binary system as efficient photocatalysts. The structure and optical absorption spectra of these compounds have been determined via X-ray diffraction and UV–vis spectroscopy over the range of 300–900 nm.The semiconductor bandgaps of Bi₂O₃, WO₃ and Bi₂WO₆ were found to be 0.2 eV, in agreement with previously reported results. Two sample preparation techniques have been considered—solid-state processing and viscous processing techniques. A custom-built, computerised micro-coextrusion system has been used to prepare intermediate compounds from the WO₃–Bi₂O₃ binary oxide system and the design and optimisation of this technique are discussed.     

Twenty-two percent efficiency HIT solar cell

We have achieved the world's highest solar cell conversion efficiency of 22.3% (V_oc: 0.725 V, I_sc: 3.909 A, FF: 0.791, total area: 100.5 cm², confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the world's first practical-size (>100 cm²) silicon solar cell that exceeds a conversion efficiency of 22% as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement.The excellent a-Si:H/c-Si hetero-interface of the HIT structure enables a high V_oc of over 0.720 V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency, especially the V_oc, of HIT solar cells, with the aim of achieving 23% efficiency in the laboratory by 2010.     

Dielectric relaxation and electrical conductivity in Bi5NbO10 oxygen ion conductors prepared by a modified sol–gel process

Crystalline Bi₅NbO₁₀ nanoparticles have been achieved through a modified sol–gel process using a mixture of ethylenediamine and ethanolamine as a solvent. The Bi₅NbO₁₀ nanoparticles were characterized by X-ray diffraction (XRD), differential scanning calorimetry/thermogravimetry (DSC/TG), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscopy (TEM) and Raman spectroscopy. The results showed that well-dispersed 5–60 nm Bi₅NbO₁₀ nanoparticles were prepared through heat-treating the precursor at 650 °C and the high density pellets were obtained at temperatures lower than those commonly employed. The frequency and temperature dependence of the dielectric constant and the electrical conductivity of the Bi₅NbO₁₀ solid solutions were investigated in the 0.1 Hz to 1 MHz frequency range. Two distinct relaxation mechanisms were observed in the plots of dielectric loss and the imaginary part of impedance (Z″) versus frequency in the temperature range of 200–350 °C. The dielectric constant and the loss in the low frequency regime were electrode dependent. The ionic conductivity of Bi₅NbO₁₀ solid solutions at 700 °C is 2.86 Ω^?1 m^?1 which is in same order of magnitude for Y₂O₃-stabilized ZrO₂ ceramics at same temperature. These results suggest that Bi₅NbO₁₀ is a promising material for an oxygen ion conductor.     

Homogeneous p+ emitter diffused using boron tribromide for record 16.4% screen-printed large area n-type mc-Si solar cell

A record efficiency of 16.4% (156.25 cm²) has been achieved for an n-type wafer-based (hereafter, “n-based”) mc-Si solar cell. A horizontal quartz tube furnace with an industry-compatible scale is employed for forming a p⁺-emitter using boron tribromide (BBr₃) as the boron source, in which system less contamination is confirmed than in other options of boron diffusion. A significantly homogeneous emitter is achieved with the standard deviation of 1.5 Ω/sq. n-Based mc-Si solar cells are fabricated with phosphorus-diffused BSF, SiN deposition, and fire-through screen-printed contacts. The properties of the best cell are; η: 16.4%, V_oc: 607 mV, J_sc: 35.2 mA/cm², and FF: 76.7%.     

Role of TiB2 and Bi2O3 additives on the rechargeability of MnO2 in alkaline cells

With an aim to understand the role of recently reported Ti-containing additives like TiB₂ on the rechargeability of manganese oxide cathodes in alkaline cells, a redox reaction involving the chemical oxidation of Mn(OH)₂ with H₂O₂ in KOH solution and a non-redox reaction involving the reaction of Mn(III) acetate with KOH have been carried out in the presence and absence of 1 wt% TiB₂ and 0.5 wt% TiB₂ + 4.5 wt% Bi₂O₃ additives. The solid products formed during the reactions have been analyzed by X-ray diffraction and a redox titration to determine the oxidation state of manganese while the filtrate has been analyzed to determine the amount of dissolved manganese with reaction time. The results suggest that irreversible reactions that follow the disproportionation reaction of dissolved Mn³⁺, which leads to the formation of electrochemically inactive phases like birnessite (δ-MnO₂) and hausmannite (Mn₃O₄) and a consequent decline in capacity retention, are suppressed in the presence of the TiB₂ additive, with the suppression being more effective when Bi₂O₃ is present along with TiB₂.     

TiO2–Au plasmonic nanocomposite for enhanced dye-sensitized solar cell (DSSC) performance

Anatase TiO₂ nanoparticles dressed with gold nanoparticles were synthesized by hydrothermal process by using mixed precursor and controlled conditions. Diffused Reflectance Spectra (DRS) reveal that in addition to the expected TiO₂ interband absorption below 360 nm gold surface plasmon feature occurs near 564 nm. It is shown that the dye sensitized solar cells made using TiO₂–Au plasmonic nanocomposite yield superior performance with conversion efficiency (CE) of ～6% (no light harvesting), current density (J_SC) of ～13.2 mA/cm², open circuit voltage (V_oc) of ～0.74 V and fill factor (FF) 0.61; considerably better than that with only TiO₂ nanoparticles (CE ～ 5%, J_SC ～ 12.6 mA/cm², V_oc ～ 0.70 V, FF ～ 0.56).     

Wide-optical bandgap with improved conductivity p-μc-Si:Ox:H films prepared by Cat-CVD

Boron-doped hydrogenated microcrystalline silicon oxide (p-μc-Si:O_x:H) films have been deposited using catalytic chemical vapor deposition (Cat-CVD). The single-coiled tungsten catalyst temperature (T_fil) was varied from 1850 to 2100 °C and films were deposited on glass substrates at the temperatures (T_sub) of 100–300 °C. Different catalyst-to-substrate distances of 3–5 cm and deposition pressures from 0.1 to 0.6 Torr were considered.Optical and electrical characterizations have been made for the deposited samples. The sample transmittance measurement shows an optical-bandgap (Eg_opt) variation from 1.74 to 2.10 eV as a function of the catalyst and substrate temperatures. One of the best window materials was obtained at T_sub=100 °C and T_fil=2050 °C, with Eg_opt=2.10 eV, dark conductivity of 3.0×10^?3 S cm^?1 and 0.3 nm s^?1 deposition rate.     

Improving the current density Jsc of organic solar cells P3HT:PCBM by structuring the photoactive layer with functionalized SWCNTs

Several works concerning the incorporation of carbon nanotubes (CNTs) in bulk polymer RR-P3HT (regio-regular poly(3-hexylthiophene-2,5-diyl)):PCBM (methanofullerene phenyl–C₆₁–butyric-acid–methyl-ester) heterojunction have been already reported by a number of research groups. The optical and electrical properties of organic cells have been extensively studied. We investigated the incorporation of functionalized single wall carbon nanotubes (SWCNTs) into the matrix of P3HT:PCBM photovoltaic (PV) cells. The photovoltaic characteristics of the cells depend on the concentration of SWCNT. The incorporation of low concentrations of SWCNT in the photoactive layer increases the current density J_sc before annealing and it can reach above 9 mA/cm². We attribute the improved PV performances to partial crystallization of the RR-P3HT. As revealed by XRD studies and confirmed by the absorbance spectra, which exhibit the typical shoulder at 600 nm and absorbance in the near infrared region. Interestingly, we observe also that doping the P3HT:PCBM active layer by the functionalized SWCNTs increases the open circuit voltage V_oc.     

Deposition of ZrO2 film by liquid phase deposition

In this study, undoped ZrO₂ thin films were deposited on single-crystal silicon substrates using liquid phase deposition. The undoped films were formed by hydrolysis of zirconium sulfate (Zr(SO₄)₂·4H₂O) in the presence of H₂O. A continuous oxide film was obtained by controlling adequate (NH₄)₂S₂O₈ concentration. The deposited films were characterized by SEM, FT-IR, XRD and DTA. Typically, the films showed excellent adhesion to the substrate with uniform particle diameter about 150 nm. The thicknesses of ZrO₂ film were about 200 nm after 10 h deposition at 30 °C. These films shows single tetragonal phase after heat treated at 600 °C. High annealing temperature (e.g. 750 °C) may result in the phase transformation of (t)-ZrO₂ into (m)-ZrO₂.     

Polymer impinged CdS/CuInSe2 solar cell

In the present paper we report, effect of conjugated polymer (polyaniline) impinging in nanostructured CdS/CuInSe₂ heterojunction thin film solar cell. The heterojunction architecture for the solar cell is achieved by sandwiching the conjugated conducting polymer in n and p type of wide band gap semiconducting material by multilayer chemical deposition methods onto the ITO coated glass substrate at room temperature. The obtained multilayer thin film heterojunction of ITO/CdS/Polymer/CuInSe₂/Ag has been characterized for structural, compositional, optical and solar cell characteristics by illuminating it to 100 mW/cm² intensity light source. The X-ray diffraction pattern (XRD) confirms formation of CdS/CuInSe₂ phase while on polymer impinging the crystallite size observed to be increased from 13 to 19 nm. The compositional analysis by energy dispersive X-ray spectra (EDAX) supports presence of expected elements in the heterojunction. The energy band gap calculated from absorbance spectra shows significant shift in its value from polymer and CdS/CuInSe₂ band gap. I–V analysis shows increase in conversion efficiency from 0.26 in CdS/CuInSe₂ to 0.55% in CdS/Polymer/CuInSe₂ heterojunction upon illumination.