Effect of Sintering Additives on Microstructure and Mechanical Properties of Porous Silicon Nitride Ceramics

Porous silicon nitride (Si₃N₄) ceramics with about 50% porosity were fabricated by pressureless sintering of α-Si₃N₄ powder with 5 wt% sintering additive. Four types of sintering aids were chosen to study their effect on the microstructure and mechanical properties of porous Si₃N₄ ceramics. XRD analysis proved the complete formation of a single β-Si₃N₄ phase. Microstructural evolution and mechanical properties were dependent mostly on the type of sintering additive. SEM analysis revealed the resultant porous Si₃N₄ ceramics as having high aspect ratio, a rod-like microstructure, and a uniform pore structure. The sintered sample with Lu₂O₃ sintering additive, having a porosity of about 50%, showed a high flexural strength of 188 MPa, a high fracture toughness of 3.1 MPa·m^1/2, due to fine β-Si₃N₄ grains, and some large elongated grains.     

Microstructure Characterization of Gas-Pressure-Sintered β-Silicon Nitride Containing Large β-Silicon Nitride Seeds

Fine β-Si₃N₄ powders with or without the addition of 5 wt% of large β-Si₃N₄ particles (seeds) were gas-pressure sintered at 1900°C for 4 h using Y₂O₃ and Al₂O₃ as sintering aids. The microstructures were examined on polished and plasmaetched surfaces. These materials had a microstructure of in situ composites with similar small matrix grains and different elongated grains. The elongated grains in the materials with seeds had a larger diameter and a smaller aspect ratio than those in the materials without seeds. A core/rim structure was observed in the elongated grains; the core was pure β-Si₃N₄ and the rim was β-SiAION. These results show that the large β-Si₃N₄ particles acted as seeds for abnormal grain growth and the rim was formed by precipitation from the liquid containing aluminum.     

Residual α–Si3N4 in O' Crystals in CeO2-Doped O'+β' SiAlON Ceramics

The microstructure of a pressureless sintered (1605°C, 90 min) O'+β' SiAlON ceramic with CeO₂ doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20–30 μm long), and a continuous matrix of small rodlike β' grains (< 1.0 μm in length). Many α-Si₃N₄ inclusions (0.1–0.5 μm in size) were found in the large O' grains. CeO₂-doping and its high doping level as well as the high Al₂O₃ concentration were thought to be the main reasons for accelerating the reaction between the α-Si₃N₄ and the Si-Al-O-N liquid to precipitate O'–SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant α–Si₃N₄ from the reacting liquid, resulting in a delay in the α→β-Si₃N₄ transformation. The large O' grains and the α-Si₃N₄ inclusions have a pronounced effect on the strength degradation of O'+β' ceramics.     

Porous Silicon Nitride Ceramics Prepared by Reduction–Nitridation of Silica

A new method for preparing porous silicon nitride ceramics with high porosity had been developed by carbothermal reduction of die-pressed green bodies composed of silicon dioxide, carbon, sintering additives, and seeds. The resultant porous silicon nitride ceramics showed fine microstructure and uniform pore structure. The influence of SiO₂ particle size and sintering process (sintering temperature and retaining time) on the microstructure of sintering bodies was analyzed. X-ray diffractometry demonstrated the formation of single-phase β-Si₃N₄ via the reaction between silicon dioxide and carbon at high temperature. SEM analysis showed that pores were formed by the banding up of rod-like β-Si₃N₄ grains. Porous Si₃N₄ ceramics with a porosity of 70–75%, and a strength of 5–8 MPa, were obtained.     

Microstructural Development During Gas-Pressure Sintering of α-Silicon Nitride

Gas-pressure sintering of α-Si₃N₄ was carried out at 1850 ° to 2000°C in 980-kPa N₂. The diameters and aspect ratios of hexagonal grains in the sintered materials were measured on polished and etched surfaces. The materials have a bimodal distribution of grain diameters. The average aspect ratio in the materials from α-Si₃N₄ powder was similar to that in the materials from β-Si₃N₄ powder. The aspect ratio of large and elongated grains was larger than that of the average for all grains. The development of elongated grains was related to the formation of large nuclei during the α-to-β phase transformation. The fracture toughness of gaspressure-sintered materials was not related to the α content in the starting powder or the aspect ratio of the grains, but to the diameter of the large grains. Crack bridging was the main toughening mechanism in gas-pressure-sintered Si₃N₄ ceramics.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Microstructural Development of Calcium alpha-SiAlON Ceramics with Elongated Grains

Silicon nitride (Si₃N₄) and SiAlONs can be self-toughened through the growth of elongated β-Si₃N₄/β-SiAlON grains in sintering. α-SiAlONs usually retain an equiaxed grain morphology and have a higher hardness but lower toughness than β-SiAlONs. The present work has demonstrated that elongated alpha-SiAlON grains can also be developed through pressureless sintering. alpha-SiAlONs with high-aspect-ratio grains in the calcium SiAlON system have exhibited significant grain debonding and pull-out effects during fracture, which offers promise for in-situ -toughened α-SiAlON ceramics.     

Electron Microscopy Study of the Effect of Iron in Reaction-Sintered Silicoa Nitride

The microstructure, crystal structure, and chemical composition of reaction-sintered Si₃N₄ containing iron were studied using conventional and scanning transmission electron microscopy. It was found that the grains of β -Si₃N₄ were large and blocklike with well-developed facets, a series of voids along some grain boundaries, a subgrain of iron silicide near the periphery, and penetration of iron silicide into the three-grain junctions and grain boundaries. At some distance from each β -Si₃N₄ grain was a region of small α-Si₃N₄ grains, with no evidence of iron silicide. Between this region and the β -Si₃N₄ grain was a zone containing both α- and β -Si₃N₄ and iron silicide. These observations suggest that the large β -Si₃N₄ grains grow in liquid iron silicide, that the smaller α-Si₃N₄ grains grow from the vapor, and that the latter are converted to the β form by solution in, and reprecipitation from, liquid iron silicide.     

Thermal Conductivity of Gas-Pressure-Sintered Silicon Nitride

Si₃N₄ with high thermal conductivity (120 W/(m^.K)) was developed by promoting grain growth and selecting a suitable additive system in terms of composition and amount. β-Si₃N₄ doped with Y₂O₃-Nd₂O₃ (YN system) or Y₂O₃-A1₂O₃ (YA system) was sintered at 1700°-2000°C. Thermal conductivity increased with increased sintering temperature because of decreased two-grain junctions, as a result of grain growth. The effect of the additive amount on thermal conductivity with the YN system was rather small because increased additive formed multigrain junctions. On the other hand, with the YA system, thermal conductivity considerably decreased with increased additive amount because the aluminum and oxygen in the YA system dissolved into β-Si₃N₄ grains to form a β-SiAlON solid solution, which acted as a point defect for phonon scattering. The key processsing parameters for high thermal conductivity of Si₃N₄ were the sintering temperature and additive composition.     

Effect of Grain Growth of β-Silicon Nitride on Strength, Weibull Modulus, and Fracture Toughness

β-Si₃N₄ powder containing 1 mol% of equimolar Y₂O₃–Nd₂O₃ was gas-pressure sintered at 2000°C for 2 h (SN2), 4 h (SN4), and 8 h (SN8) in 30-MPa nitrogen gas. These materials had a microstructure of " in-situ composites" as a result of exaggerated grain growth of some β Si₃N₄ grains during firing. Growth of elongated grains was controlled by the sintering time, so that the desired microstructures were obtained. SN2 had a Weibull modulus as high as 53 because of the uniform size and spatial distribution of its large grains. SN4 had a fracture toughness of 10.3 MPa-m^1/2 because of toughening provided by the bridging of elongated grains, whereas SN8 showed a lower fracture toughness, possibly caused by extensive microcracking resulting from excessively large grains. Gas-pressure sintering of β-Si₃N₄ powder was shown to be effective in fostering selective grain growth for obtaining the desired composite microstructure.     

Bond Energetics at Intergranular Interfaces in Alumina-Doped Silicon Nitride

In Si₃N₄ ceramics sintered with Al₂O₃, the interfacial strength between the intergranular glass and the reinforcing grains has been observed to increase with increases in the aluminum and oxygen content of the epitaxial β-Si_{6- z} Al _z O _z N_{8– z} layer that forms on the Si₃N₄ grains. This has been attributed to the formation of a network of strong bonds (cross bonds) that span the glass-crystalline interface. This proposed mechanism is considered further in light of first-principles atomic cluster calculations of the relative stabilities of bridge and threefold-bonded atomic fragments chosen to represent compositional changes at the glass/Si₃N₄ grain interface. Calculated binding energies indicate Al-N binding is favorable at the Si₃N₄ grain surface, where aluminum occupancy can promote the growth of SiAlON, further enhancing the cross-bonding mechanism of interfacial strengthening.     

Microstructure Tailoring for High Thermal Conductivity of β-Si3N4 Ceramics

β-Si₃N₄ ceramics sintered with Yb₂O₃ and ZrO₂ were fabricated by gas-pressure sintering at 1950°C for 16 h changing the ratio of "fine" and "coarse" high-purity β-Si₃N₄ raw powders, and their microstructures were quantitatively evaluated. It was found that the amount of large grains (greater than a few tens of micrometers) could be drastically reduced by mixing a small amount of "coarse" powder with a "fine" one, while maintaining high thermal conductivity (>140 W·(m·K)⁻¹). Thus, this work demonstrates that it is possible for β-Si₃N₄ ceramics to achieve high thermal conductivity and high strength simultaneously by optimizing the particle size distribution of raw powder.     

Fabrication and Mechanical Properties of Silicon Carbide-Silicon Nitride Composites with Oxynitride Glass

A microstructure that consisted of uniformly distributed, elongated β-Si₃N₄ grains, equiaxed β-SiC grains, and an amorphous grain-boundary phase was developed by using β-SiC and alpha-Si₃N₄ powders. By hot pressing, elongated β-Si₃N₄ grains were grown via alpha right arrow β phase transformation and equiaxed β-SiC grains were formed because of inhibited grain growth. The strength and fracture toughness of SiC have been improved by adding Si₃N₄ particles, because of the reduced defect size and the enhanced bridging and crack deflection by the elongated β-Si₃N₄ grains. Typical flexural-strength and fracture-toughness values of SiC-35-wt%-Si₃N₄ composites were 1020 MPa and 5.1 MPam^1/2, respectively.     

Microstructure in Silicon Nitride Containing β-Phase Seeding: III, Grain Growth and Coalescence

The mechanical properties of Si₃N₄ materials depend mainly on the microstructure, which originates during the densification process. The microscopic evidence indicates that β-Si₃N₄ seeds incorporated in the starting powders play an important role in microstructural development, especially in the heterogeneous grain growth of β-Si₃N₄ grains during sintering. The growth of β-grains is initiated from the β-seeds, resulting in a core/shell microstructure. The presence of Moiré fringes and dislocations is attributed to misfit strain and compositional differences between the core and the shell. Coalescence can occur at the final stage of sintering.     

New Strategies for Preparing NanoSized Silicon Nitride Ceramics

We report the preparation of nanosized silicon nitride (Si₃N₄) ceramics via high-energy mechanical milling and subsequent spark plasma sintering. A starting powder mixture consisting of ultrafine β-Si₃N₄ and sintering additives of 5-mol% Y₂O₃ and 2-mol% Al₂O₃ was prepared by high-energy mechanical milling. After milling, the powder mixture was mostly transformed into a non-equilibrium amorphous phase containing a large quantity of well-dispersed nanocrystalline β-Si₃N₄ particles. This powder precursor was then consolidated by spark plasma sintering at a temperature as low as 1600°C for 5 min at a heating rate of 300°C/min. The fully densified sample consisted of homogeneous nano-Si₃N₄ grains with an average diameter of about 70 nm, which led to noticeable high-temperature ductility and elevated hardness.     

Texture in Silicon Nitride Seeded with Silicon Nitride Whiskers of Different Sizes

Silicon nitride ceramics seeded with 3 wt%β-Si₃N₄ whiskers of two different sizes were prepared by a modified tape casting and gas pressure sintering. The fine whiskers had a higher aspect ratio than the coarse whiskers. Quantitative texture analysis including calculation of the orientation distribution function (ODF) was used for obtaining the degrees of preferred orientation of sintered samples. The maximum multiples of random distribution (mrd) values of samples seeded with the fine and coarse whiskers were large, greater than 15 and 9, respectively. Meanwhile, the mrd value of a sample seeded with fine whiskers was only 9 when it was prepared by conventional tape casting. The microstructures and the XRD data revealed that the well-aligned whiskers grew significantly after sintering and dominated the texture. Differences among the degrees of preferred orientation of the samples were explained using Jeffrey's model on rotation of elliptical particles carried by a viscous fluid.     

Processing of a Novel Multilayered Silicon Nitride

A new type of silicon nitride with a layered structure of alternating dense and porous layers was obtained by addition of β-Si₃N₄ whiskers to the porous layers. The materials consisted of dense layers 60 μm thick and porous layers 40 μm thick with a final porosity of about 30%. Highly anisotropic shrinkage behavior was observed during sintering. A large addition of whiskers to the porous layers resulted in layers with well-oriented and tightly tangled elongated grains, where porosity is represented by anisotropic shaped pores.     

Effect of α to β (β') Phase Transition on the Sintering of Silicon Nitride Ceramics

By using α-Si₃N₄ and β-Si₃N₄ starting powders with similar particle size and distribution, the effect of α-β (β') phase transition on densification and microstructure is investigated during the liquid-phase sintering of 82Si₃N₄·9Al₂O₃·9Y₂O₃ (wt%) and 80Si₃N₄·13Al₂O₃·5AIN·5AIN·2Y₂O₃. When α-Si₃N₄ powder is used, the grains become elongated, apparently hindering the densification process. Hence, the phase transition does not enhance the densification.     

Sintering Silicon Nitride Ceramics in Air

Silicon nitride (Si₃N₄) ceramics, prepared with Y₂O₃ and Al₂O₃ sintering additives, have been densified in air at temperatures of up to 1750°C using a conventional MoSi₂ element furnace. At the highest sintering temperatures, densities in excess of 98% of theoretical have been achieved for materials prepared with a combined sintering addition of 12 wt% Y₂O₃ and 3 wt% Al₂O₃. Densification is accompanied by a small weight gain (typically <1–2 wt%), because of limited passive oxidation of the sample. Complete α- to β-Si₃N₄ transformation can be achieved at temperatures above 1650°C, although a low volume fraction of Si₂N₂O is also observed to form below 1750°C. Partial crystallization of the residual grain-boundary glassy phase was also apparent, with β-Y₂Si₂O₇ being noted in the majority of samples. The microstructures of the sintered materials exhibited typical β-Si₃N₄ elongated grain morphologies, indicating potential for low-cost processing of in situ toughened Si₃N₄-based ceramics.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.