Microstructure and Oxidation Resistance of V Thin Films Deposited by Magnetron Sputtering at Room Temperature

Vanadium films were deposited on Si(100) substrates at room temperature by direct current (DC) magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy (SEM) and atomic force microscope (AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.     

射频磁控溅射制备类金刚石薄膜

采用射频磁控溅射法在Si和Ti合金基体上沉积出类金刚石(DLC)薄膜.利用拉曼光谱仪、划痕仪和扫描电子显微镜分析了DLC薄膜的结构、膜基附着力和表面形貌.结果表明:射频磁控溅射法能够制备出表面平整、结构致密的DLC薄膜;同时基体材料的不同不会影响DLC薄膜的键合结构,Si基体上涂层附着力为30N,Ti基体上膜基结合力大于40 N.     

纳米VO2薄膜相变特性的红外透射表征研究

采用双离子束溅射VOx薄膜附加热处理的方式制备纳米VO2薄膜,利用X射线衍射仪和扫描电子显微镜分别对其结晶结构和表面形貌进行了测试,利用傅立叶变换红外光谱仪(FTIR)对热驱动下纳米VO2薄膜相变过程中的光学性能进行测试与分析。实验结果表明,经400℃N2热处理后,获得了由纳米颗粒组成的VO2薄膜;在所测试的红外波段,纳米VO2薄膜内颗粒发生相变的初始温度随波长的增加而升高,薄膜的相变温度点随波长增加也逐渐升高。 更多还原     

Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe_2 thin films

1　INTRODUCTIONCuInSe2 based solar cells show their greatpromise with high conversion efficiency in commer cial applications[1]. But thus far the recorded effi ciency approaching 20% was achieved in laboratoryon the cells with small size using co evaporationdeposition technique which would face several chal lenges in volume production for large area solarcell. In order to realize the potential of CuInSe2(CIS) as photovoltaic material, it is important todeve…     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

室温非晶硅薄膜热电阻温度系数研究

用离子束增强沉积（IBED）方法,在SiO2/Si衬底上沉积了非晶硅薄膜和注氢的非晶硅薄膜。研究薄膜的电阻温度系数（TCR）随制备工艺的变化,分析非晶硅薄膜电阻的稳定性对电阻温度系数的影响。本征非晶硅电阻太大,虽然经过适当地退火后,TCR能够达到6.39%K-1,但是电阻值还是过高,不适合制作器件。经过硼掺杂的非晶硅薄膜,电阻显著下降,相应的TCR可以达到6.80%K-1。制作的氢化非晶硅薄膜的电阻温度系数（TCR）高达8.72%K-1,且制作工艺简单,与常规集成电路工艺兼容性好。用离子束增强沉积的非晶硅薄膜可以用于制备红外探测仪。但实验还存在着重复性不好等问题,需要作深入的实验研究。     

纳米针状金刚石膜的制备

利用高功率微波等离子体化学气相沉积方法在硅衬底上沉积了多晶金刚石薄膜,然后利用电子束蒸发方法在金刚石薄膜表面上沉积了5 nm厚的Pt薄膜.利用Pt的自组织化效应,再通过氢等离子体照射、氧等离子体刻蚀、王水处理等手段,使金刚石薄膜表面形成了纳米针.利用拉曼光谱和扫描电子显微镜(SEM)表征金刚石薄膜的结构,拉曼光谱显示在1 315 cm^-1处出现纳米金刚石特征峰,SEM显示纳米针均匀地直立在金刚石薄膜表面,每平方厘米大约含有10⁸个纳米针,纳米针的平均高度约为1 μm.     

Optimization of material structure of ploy-Si thin film based on Al induced crystallization

Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/…/Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500℃ N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize cryst...     

V元素对TiAlVN膜层组织和抗热震性能的影响

为了拓展火炮身管延寿,利用磁控溅射技术在炮钢表面沉积了TiAlN膜层,并添加V元素来改善膜层性能.利用扫描电子显微镜附加能谱仪和X射线衍射仪分析了膜层的成分、相结构和表面形貌,研究了V元素对TiAlN膜层抗热震性能的影响.结果表明,TiAlN和TiAlVN膜层主要以TiN为主相择优生长.TiAlVN膜层属于面心立方和微弱六方密排二重结构,晶粒尺寸比TiAlN膜层略大,而晶格常数比TiAlN膜层小,因而TiAlVN膜层质量相对较好.TiAlVN膜层不易产生裂纹,抗开裂性能较好.此外,TiAlVN膜层的抗热震循环次数约为TiAlN膜层的1.4倍.     

Preparation and characterization of nanocrystalline SnO2 thin film by electrodeposition technique

A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnO2 thin films was proposed with current density of 8 mA/cm2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0.03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150 ℃ for 10 h.     

退火温度对Cu膜微结构与应力的影响

采用磁控溅射工艺在Si基片上沉积500 nm厚Cu膜,并在不同温度下进行快速退火处理。用X射线衍射仪、扫描电镜、光学相移方法研究薄膜的微结构与应力。结果表明：随着退火温度T增加,Cu（111）择优取向系数δCu（111）不断减小,薄膜的Cu（111）/Cu（200）取向组成比值减小;在T=773K条件下退火的薄膜形成了显著的空洞与裂纹;当T在小于673 K范围内增加时,薄膜应力由拉应力不断减小继而转变为压应力,而当T=773 K时,薄膜又呈现出较大的拉应力。     

薄膜材料的制备与表征方法研究进展

材料的表面与基体内部在结构和性能上都会存在差异,这就要求对薄膜材料的制备及其表征方法有基本的了解.分析了薄膜材料的分类、常见制备方法及其原理,对材料表面的组分、结构、形貌等分析方法进行了归纳总结,并利用XRD,SEM,EDAX等进行逐项表征,获得了完整的材料表面信息,得出了薄膜材料的工艺制备,采用磁控溅射的方法较好.     

Study on the characterization and technology of Cu thin-film temperature sensor fabricated on aluminum alloy

In the present study,anodic films on aluminium alloy was used as the dielectric layer for Cu thinfilm temperature sensor,and then Cu film was deposited by unbalanced magnetron sputtering ion plating as the sensitive layer.Microstructure and surface morphologies of Cu film were investigated by optical microscope（OM）,atomic force microscope（AFM） and scanning electron microscope（SEM）.Electrical properties of Cu thin-film temperature sensor were tested by four-point probe technique and Digit Multimeter.The results showed that the surface roughness of anodic films can be reduced from Ra 58.096 nm to Ra 16.335 nm by proper polishing.Continual Cu stripes can be obtained both on polished anodic alumina film and smooth alumina wafer by etching after Cu film annealing.The resistivity of Cu films before and after 300 ℃ as well as 400 ℃ annealing are 12.48 mΩ·cm,5.48 mΩ·cm and 4.83 mΩ·cm,respectively.The resistances of Cu thin-film temperature sensor in 70 ℃ and 0 ℃ are 946.5 Ω and 761.15 Ω respectively.The temperature coefficient of resistivity（TCR） of the sensor is 3479 × 10^{- 6} /℃.     

Growth,Characterization and Micro-pattern Fabrication of Iridium/Si3N4/Si（100） Thin Films

Iridium thin films have been deposited on Si3N4（100 nm）/Si（100） substrates by magnetron sputtering. And then iridium film micro-patterns were fabricated by ion milling technique. The atomic force microscopy （AFM） measurements reveal that there is a very fiat and smooth surface with an average roughness of 0.64 nm for the iridium films. The X-ray diffraction also reveals that the deposited iridium films have a polycrystalline microstructure with （111） plane preferential orientation. The electrical resistivity of the iridium films was also measured and discussed.     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

Formation of Zr-contained Amorphous Alloy Films by Magnetron Co-sputtering

In order to explore the application of magnetron co-sputtering in fabricating the amorphous alloy, Zr-contained amorphous films were prepared by this technique and investigated by scanning electron microscope, energy disperse spectroscopy and X-ray diffraction. The results show that the co-sputtered films are in fully amorphous state or with amorphous-nanocrystalline structure. The XRD patterns of the Zr-Cu and Zr-Ni amorphous films exhibit a double-peak phenomenon. There is a shift of diffusive peak with changing the sputtering current which is possibly attributed to the change of Zr-Ni and Zr-Cu intermetallic like short range orders. In addition, Zr-Cu-Ni ternary co-sputtered films have a sharper peak at high angle. The sputtering yield of element during co-sputtering ranks as CuNiZr, which can be ascribed to the contribution of melting and boiling temperature, atomic size and electrical conductivity of elements.     

升温模式对热处理TiN薄膜结构及性能的影响

为了比较不同热处理方式及工艺对TiN薄膜结构和性能的影响,在真空条件下、300~900℃范围内,对采用非平衡磁控溅射方法在单晶硅基底上沉积TiN薄膜后进行了热处理实验,考查了热处理模式（不同升温速率）和温度对薄膜结构和性能的影响．利用X射线衍射仪（XRD）对薄膜微结构进行表征,并利用扫描电镜观察了不同热处理模式下薄膜的表面形貌．同时,对不同工艺下薄膜的硬度、表面粗糙度和电阻率进行了表征．结果表明,薄膜经过热处理后,其晶体结构、择优取向、硬度、粗糙度和电阻率发生明显变化,并且随着热处理模式和温度的不同而产生较大差异．无论哪种模式,真空热处理后TiN薄膜的硬度均有所下降,其表面粗糙度亦有相似的变化趋势．两种模式下,经过450℃热处理后薄膜的硬度和粗糙度均达到最大值,与其高度择优取向的晶体结构有明显的相关性．     

Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe2 thin films

Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe₂ thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe₂ absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe₂ thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of Cu₁₁In₉ phase with In-rich solid solution. Stoichiometric CuInSe₂ thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe₂ thin film shows P-type conductivity and its resistivity reaches 1.2×10³ Θ·cm. Foundation item: Project(2004AA513023) supported by the National High Technology Research and Development Program of China     

AZ31镁合金表面磁控溅射TiO2薄膜的表面特性的研究

利用射频磁控溅射工艺在AZ31镁合金表面溅射了TiO₂薄膜,并对薄膜的特性进行了研究。扫描电镜观察显示制备态的TiO₂薄膜结构致密,表面无缺陷。对薄膜经过200℃保温30分钟、常温冷却或者85℃保持一小时后放到常温保持15分钟,连续实施4次该操作的两种热处理工艺后,观察到薄膜表面致密结构没有发生变化,表面也没有缺陷生成。这表明了薄膜具有热稳定性。薄膜表面硬度特性研究表明薄膜表面的显微硬度为1.51 GPa。最后,研究了表面镀有TiO₂薄膜的AZ31镁合金在模拟人体体液环境下的腐蚀（降解）特性。结果表明,在7天腐蚀过程中,AZ31镁合金基底没有被腐蚀,因此TiO₂薄膜对AZ31镁合金基底具有很好的保护作用。     

磁控溅射TiCN薄膜对Al-Cu-Mg-Ag合金组织与性能的影响

基于正交试验设计，在铝合金表面磁控溅射沉积TiCN薄膜，采用盐雾腐蚀、电化学腐蚀、硬度测试等探究磁控溅射工艺参数（钛靶功率、碳靶功率、氮氩比）对Al-Cu-Mg-Ag合金硬度与抗腐蚀性能的影响规律，并结合扫描电镜（SEM）、X射线衍射（XRD）等对其机理进行探讨。结果表明：磁控溅射工艺参数对合金的膜层硬度、盐雾最大腐蚀深度、腐蚀电流密度、膜基结合力的影响顺序分别为：氮氩比>C靶功率>Ti靶功率；C靶功率>氮氩比>Ti靶功率；C靶功率>氮氩比>Ti靶功率；Ti靶功率>C靶功率=氮氩比。C靶功率200 W、Ti靶功率100 W、氮氩比为1：40时，可以获得耐蚀性、硬度和膜基结合力综合性能优良的TiCN膜层。