显示及光通讯用的高△n液晶

高双折射率（△n）液晶常用于彩色顺序式微显示、高亮度胆甾相显示、高对比度PDLC及高速光通讯。本文对△n＞0．4、光吸收弱、光和热稳定性好的液晶,从液晶分子结构进行评述。     

基于Berreman 4×4矩阵对胆甾相液晶Bragg反射带宽的模拟研究

利用Berreman 4×4矩阵和Matlab编程模拟了胆甾相液晶的反射光谱,分析了螺旋数(液晶厚度)、基板的折射率、双折射、折射率色散、固定螺距、梯度螺距和入射角等因素对反射光谱带宽的影响。结果表明,要得到理想的Bragg反射带宽,液晶层的厚度即螺旋数N需达到N≥10;基板折射率会影响最大反射率,基板折射率ng与寻常光折射率no相比,ngno时,最大反射率比较低,ng越小越影响明显,当ng≥no时,具有很好的反射率;折射率的色散和大的入射角会使带宽变窄,而大的双折射Δn和螺距P可以得到较宽的反射带宽,但拓宽效果有限。通过梯度螺距的函数表达式,理论模拟了具有螺距梯度的胆甾相液晶的反射带宽,其对于胆甾相液晶宽波反射的实验研究具有一定的意义。     

显示用胆甾相液晶材料发展现状

介绍了胆甾相液晶显示性能和对液晶材料的要求,分析了近几年高双折射率液晶化合物和手性掺加剂及其胆甾相液晶材料的应用与发展情况,初步阐明了分子结构与液晶性能及其手性掺加剂的HTP值之间的依存关系,为开发新型液晶化合物、手性化合物和胆甾相液晶材料提供了线索。     

胆甾相液晶场致织构变化的偏光显微镜观测

介绍胆甾相液晶的织构和显示应用，给出胆甾相液晶几种织构的偏光显微镜图像。该图像对认识胆甾相液晶的各种织构，理解胆甾相液晶在双稳态显示器的应用原理具有一定的意义。     

公共电极和反射器作互补的单盒式透反射型液晶显示器

给出了一种单盒式透反射型液晶显示器,它采用顶板公共电极和底板的反射器形成互补。这些狭长的公共电极和反射器在透射区域(T区)产生出强劲的纵向电场,而在反射区域(R区)带来微弱的边缘场。无论透射显示模式还是反射显示模式,均给出高的光学效率和良好的匹配灰度。     

公共电极和反射器作互补的单盒式透反射型液晶显示器

给出了一种单盒式透反射型液晶显示器,它采用顶板公共电极和底板的反射器形成互补.这些狭长的公共电极和反射器在透射区域(T区)产生出强劲的纵向电场,而在反射区域(R区)带来微弱的边缘场.无论透射显示模式还是反射显示模式,均给出高的光学效率和良好的匹配灰度.     

快速高双折射率向列相液晶的分子设计与模拟计算

当前液晶自适应光学系统还不能满足校正大气湍流频率(＞40 Hz)的要求,这主要受限于LCOS器件的响应速度(10～20 ms)和位相调制量超过1λ的系统要求.研制新型快速高双折射率向列相液晶材料是解决这一问题的根本方案.本文从分子结构上探讨了影响液晶粘度和双折射率的一般规律.在此基础之上,设计了两种低粘度、高双折射率的液晶分子.通过使用AM1半经验量子化学算法进行了模拟计算,预测了所设计的液晶材料的Δn和Δε值.模拟结果说明,这两种结构的液晶材料能够很好地满足自适应系统的要求.     

含氟三苯二炔类液晶化合物合成及其性质研究

目前,越来越多的液晶应用要求向列相液晶材料具有高双折射率性能。本文合成了5个高双折射率含氟三苯二炔类液晶化合物(Ⅳ),经过IR,1 H NMR,13 C NMR谱图鉴定,这些化合物的分子结构完全正确;通过DSC和POM对其液晶相态测试的实验结果表明该类液晶化合物具有较低的熔点和相对较宽的向列相温度范围(达到100℃左右);对其折光率测试结果表明这些液晶化合物的双折射率(Δn)值在0.47以上,改善液晶光学性能。     

(L)乳酸手性衍生物的含氟二苯乙炔液晶的合成

合成了化合物1-[(1-乙基羰基)-乙基]-4-[4-(2,3,5,6-四氟-4-烷氧基苯基)乙炔基]苯基对苯二甲酸酯(n=5,6,7,8).用热台偏光显微镜及差示量热分析法研究该化合物的液晶性,讨论了氟取代基及桥键对液晶性的影响。所有化合物皆显示互变的胆甾相,黏度低双折射较高,化学稳定,可以用于反射型液晶显示器及自适应光学系统。目的物的最后合成采用Sonogashira交叉偶合法。     

公共电极和反射器作互补的单盒式透反射型液晶显示器

给出了一种单盒式透反射型液晶显示器,它采用顶板公共电极和底板的反射器形成互补.这些狭长的公共电极和反射器在透射区域(T区)产生出强劲的纵向电场,而在反射区域(R区)带来微弱的边缘场.无论透射显示模式还是反射显示模式,均给出高的光学效率和良好的匹配灰度.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.