金属氧化物半导体气敏传感器研究进展

金属氧化物半导体气敏传感器由于具有低成本、低功耗、高灵敏度、快速响应、稳定耐用等特点而引起人们广泛关注。本文主要介绍了金属氧化物半导体气敏传感器的基本原理、分类、器件结构、气敏机制,重点介绍了金属氧化物气敏传感器性能提升方法。通过掺杂改性、改变微观尺寸和形貌以及形成各种复合结构等都有利于金属氧化物传感器气敏性能的增强,并对其增强机理进行了一定的解释。     

半导体金属氧化物气敏材料敏感机理概述

本文结合半导体金属氧化物的电学特性，从气体分子与半导体金属氧化物气敏材料相互作用的角度出发，对其气敏机理作一概述。由于半导体金属氧化物气敏机理与氧存在密切相关，因而从表面吸附、催化氧化反应的角度研究气敏机理对研究反应机理、提高气敏性能、开发新型气敏材料和掺杂剂有着重要的意义。     

金属氧化物气敏传感器(V)

大多数实用气敏传感器是金属氧化物半导体或金属氧化物固体电解质材料制作的,所以,把它们分为氧化物半导体气敏传感器和氧化物固体电解质气敏传感器两类.前者利用待测气体与氧化物半导体的相互作用引起器件电导（或电阻）的变化来测定气体，后者 利用氧化物固体电解质制作的电池的电动势与气体浓度的关系来测定气体的．     

金属氧化物半导体SnO2气敏传感器

SnO_2具有金红石型的晶体结构,禁带宽度约为 3.6 eV.由于Sn的电子亲合力不太强,晶态SnO_2都具有氧空位,故属于N型金属氧化物半导体.作为施主的氧空位,其能     

金属氧化物气敏传感器

金属氧化物气敏传感器是金属氧化物与被测气体发生作用后, 改变了它的电性质, 从 而把气体成份、浓度等化学信息转换成电的信息的一种元器件金属氧化物的电性质与材 料的点缺陷有密切的关系, 因而研究点缺陷理论对了解金属氧化物气敏传感器的作用原 理, 改善其气敏性能都是很必要的     

金属氧化物半导体电阻 型气敏传感器作用机理

根据实验所得规律,知金属氧化物表面发生的气—固、气—气反应及其相关的电子过程是气敏作用机理的基础.添加剂、表面处理、温度控制等都能够影响这些反应过程,可用来改善传感器的灵敏度和选择性.     

复合氧化物气敏材料的进展

较全面、系统地评述了近年来复合氧化物气敏材料的进展,指出了这类材料存在的主要问题,对今后的发展前景作了展望。     

金属氧化物半导体气敏传感器的加热电路

本文简述了金属氧化物半导体—N- SnO2 半导体气敏传感器的加热电路,并根据实际应用对加热电路进行了一些改进。     

金属氧化物气敏传感器

6结论与展望 6.1气敏传感器近年来的研究开发成果 以二氧化锡可燃性气体传感器为代表的金属氧化物半导体气敏传感器和以二氧化锆浓差电池氧气传感器为代表的金属氧化物固体电解质气敏传感器实用化以来的短短几十年,金属氧化物气敏传感器事业得到很大的发展,特别是近20年来,它引起了世界主要国     

金属氧化物气敏元件稳定性的研究进展

金属氧化物气敏元件性能的不稳定制约了元件的实用化进程,气敏元件稳定性的研究成为气体传感器技术中的一项重要内容。概述了金属氧化物气敏元件稳定性的研究进展,介绍了敏感材料、敏感材料的制备工艺、载体材料、加热/测量电极等因素对稳定性的影响。分析了各种影响因素的作用机理,并对其研究前景进行了展望。     

超细MgFe_2O_4复合氧化物的气敏性能研究

以FeSO4·7H2O和MgCl2·6H2O为材料,用新型化学共沉淀法制备了纳米尺寸的复合金属氧化物MgFe2O4粉体。将样品做成厚膜型气敏元件,测定了其对乙醇、甲醛、丙酮、甲苯、苯氨气、石油醚等还原(可燃)性气体的气敏特性。测试显示:700℃下,热处理1h,所得纳米微粉制作的元件在300℃工作温度下对丙酮有较高灵敏度和良好的选择性,并对气敏机理给予了解释。     

Microstructure effects on the response of gas-sensitive resistors based on semiconducting oxides

A simple numerical method to describe the effects of microstructure on the response of gas-sensitive resistors is presented. The model material is constructed as a random assembly of spheres with a Poisson distribution of radius, each sphere being built from elementary cubes of side δ, the Debye length. The key scaling variable is thus the ratio of the mean sphere radius to the Debye length. The gas is considered to change the conductance of only those elementary cubes which contact the void space. The model is a simple ohmic one, and does not take into account any effects of variation of potential within the particles induced by the surface charge which in practise exists. However, it usefully reproduces the observed effects of microstructure on response, showing that the agglomeration of small sensor crystallites into larger masses within the fabricated device is a key phenomenon which leads to gross variation of the apparent power-law-response exponent.     

CaO-In2O3的制备/结构表征/气敏性能研究

采用共沉淀方法,以一定摩尔比的可溶性钙盐和铟盐为源物质,以氢氧化物作为沉淀剂,制备出了CaO-In2O3复合氧化物粉末.借助差热-热重(DTA-TG)分析可知CaO-In2O3的热变化过程,即在248℃附近由氢氧化物前驱物分解成氧化物,在340℃附近是氧化物的相转变,340℃以后为两氧化物的化合.利用X-射线衍射(XRD)分析知CaO-In2O3的晶体结构为立方结构.对CaO-In2O3的气敏性能研究表明,由CaO-In2O3粉体制成的旁热式厚膜气敏元件无需掺杂,对丙酮、乙醇、乙酸具有较高的灵敏度.     

ZnIn2O4的制备、结构表征与气敏性能

采用共沉淀方法,以一定摩尔比的可溶性锌盐和铟盐为源物质,以氢氧化物作为沉淀剂,制备出了具有尖晶石结构的ZnIn2O4复合氧化物粉末.借助差热-热重(DTA-TG)分析可知ZnIn2O4的热变化过程,即在248℃附近由氢氧化物前驱物分解成氧化物,在340℃附近是氧化物的相转变,340℃以后为两氧化物的化合.利用X-射线衍射(XRD)分析知ZnIn2O4的晶体结构为尖晶石结构.对ZnIn2O4的气敏性能研究表明,由ZnIn2O4粉体制成的旁热式厚膜气敏元件无需掺杂,对乙醇、丙酮、氢气具有较高的灵敏度.     

Scalability and homogeneity of slot die‐coated metal oxide semiconductor for TFTs

An indium oxide‐based precursor solution has been developed by spin coating method. In order to apply this material to mass production, material, process, and equipment optimizations for slot die coating have been implemented. Slot die coating is a cost‐effective and scalable process and already applied to photoresist materials in the display industry. The indium oxide‐based precursor solution has been coated on bare glasses and thin‐film transistor substrates by a mass production‐type slot die coater. Mobility of over 10 cm²/Vs is achieved for the first time for a large area at an annealing temperature of 350 °C. The homogeneity of the film will be presented.     

Structural and electrical properties of mixed oxides of manganese and vanadium: A new semiconductor oxide thermistor material

Binary oxides of manganese and vanadium have been synthesized by solid state sintering, in which the mass ratio of the individual components Mn₂O₃ and VO₂ have been varied from 90:10 to 5:95. The bulk ceramic samples were characterized by X-ray diffraction and scanning electron microscopy with energy dispersive X-ray analysis. The initial compositions either rich in Mn₂O₃ or in equi-proportion by mass with VO₂ yield β-Mn₂V₂O₇ or a new crystalline form of Mn₂V₂O₇, with unit cell parameters: a = 7.73091 Å, b = 6.640788 Å, c = 6.70779 Å α = γ = 90° and β = 98.7086° which is designated as γ-Mn₂V₂O₇. The compositions, richer in VO₂ produce MnV₂O₆ co-existing with V₂O₅ the proportion of which increases with increase in VO₂. The surface microanalysis shows a spherical-granular morphology in Mn₂V₂O₇ structure and plate/rod-like structures co-existing with granular morphology in case of MnV₂O₆ together with V₂O₅. The electrical parameters of the negative temperature coefficient thermistors were determined. Depending on the constituent oxide composition, the NTC thermistors showed room temperature resistivity in the range of 6.52 × 10² to 6.1 × 10⁶ Ω-cm. The thermistor constant and activation energy are in the range of 0.12–0.458 eV and 1393–4801 K, respectively.     

基于Maya软件的贵重金属材质研究

以俗语“珠光宝气”的思路为出发点,巧妙地与贵金属材质的研究相结合,发掘出了贵重金属材质在Maya软件中的两种高效实现方法,并且很好地实现了预期效果.     

Transition metal oxide electrochromic materials and displays: a review: Part 2: oxides with anodic coloration

Thin films of a number of transition metal oxides, when employed as electrodes in the appropriate electrochemical cells, exhibit electrochromism by a reversible ion-insertion mechanism. Cathodically colouring oxides were covered in the first part of this review¹. Oxides which colour anodically by an oxidation process, ie those of Ir, Rh, Ni and Co, are considered here. Special attention is given to iridium oxide as the most studied example and as behaviour model. Significant advances in the understanding and development of electrochromic displays are highlighted. Fabrication and performance of display electrode and complete display cells based on these materials is described and compared, and suggestions put forward regarding the most promising electrochromic material/electrolyte combinations for further study. Emphasis is placed on the method and details of film deposition or growth which determine film stoichiometry (including moisture content) and morphology and in turn strongly influence electrochromic behaviour.     

半导体复合氧化物的室温固相合成研究

以无机盐为原料 ,遵守热力学定律 ,室温下研磨 ,使反应物发生固相化学反应而合成CdSnO3 、ZnFe2 O4、CdFe2 O4等半导体复合氧化物的纳米粉体 ,用XRD、TEM测试手段对产物的物相和微观结构进行了表征和分析 ,结果表明 ,固相化学反应完全 ,所得产物为理论产物 ,且平均粒径小于 10 0nm。     

Semiconducting metal oxides as sensors for environmentally hazardous gases

This article extensively reviews the recent development of semiconductor metal oxide gas sensors for environmentally hazardous gases including NO₂, NO, N₂O, H₂S, CO, NH₃, CH₄, SO₂ and CO₂. The gas sensing properties of differently-prepared metal oxides and loaded metal oxides towards nine environmentally hazardous gases have been individually compared and digested. Promising materials for sensitive and selective detection of each hazardous gas have been identified. For instance, unloaded WO₃ nanostructures are the most promising candidates for NO₂ sensing while metal catalyst loaded WO₃ and gold-loaded SnO₂ sensors are among the most effective for NO and N₂O sensing, respectively. Moreover, related gas-sensing mechanisms are comprehensively discussed.