Up-converted 1/f PM and AM noise in linear HBT amplifiers

In this paper we describe a technique to predict the 1/f phase modulation (PM) and 1/f amplitude modulation (AM) noise due to up-conversion of 1/f baseband current noise in microwave heterojunction bipolar transistor (HBT) amplifiers. We obtain an accurate model for the amplifier and find the expression for voltage gain in terms of DC bias, transistor parameters, and circuit components. Theoretical 1/f PM and AM noise sensitivities to 1/f baseband current noise are then found by applying the definitions of PM and AM noise to the gain expression of the amplifier. Measurements of PM and AM sensitivities at 500 MHz and 1 GHz were in good agreement with the values predicted by theory, verifying the validity of this technique. This method can be used to optimize amplifier design for low PM and AM noise. We show that the amplifier PM noise can be reduced by 9 dB by adjusting the value of the input coupling capacitor.     

Origin of 1/f PM and AM noise in bipolar junction transistor amplifiers

In this paper we report the results of extensive research on phase modulation (PM) and amplitude modulation (AM) noise in linear bipolar junction transistor (BJT) amplifiers. BJT amplifiers exhibit 1/f PM and AM noise about a carrier signal that is much larger than the amplifiers thermal noise at those frequencies in the absence of the carrier signal. Our work shows that the 1/f PM noise of a BJT based amplifier is accompanied by 1/f AM noise which can be higher, lower, or nearly equal, depending on the circuit implementation. The 1/f AM and PM noise in BJTs is primarily the result of 1/f fluctuations in transistor current, transistor capacitance, circuit supply voltages, circuit impedances, and circuit configuration. We discuss the theory and present experimental data in reference to common emitter amplifiers, but the analysis can be applied to other configurations as well. This study provides the functional dependence of 1/f AM and PM noise on transistor parameters, circuit parameters, and signal frequency, thereby laying the groundwork for a comprehensive theory of 1/f AM and PM noise in BJT amplifiers. We show that in many cases the 1/f PM and AM noise can be reduced below the thermal noise of the amplifier.     

一种用于多标准接收机的宽带低噪声放大器

设计了一种应用于软件无线电接收机的300kHz～1.6GHz宽带低噪声放大器,适用于数字广播、数字电视和定位导航等系统.该放大器采用噪声抵消结构以降低输入匹配器件在输出端所产生的热噪声和闪烁噪声,能够同时实现输入阻抗匹配和噪声优化.对采用中芯国际(SMIC)0.18 μm RF CMOS工艺实现的芯片的测试结果表明,3dB带宽为300kHz～1.6GHz,最大增益S21为16.7dB,输入反射系数S11小于-7.4dB,最小噪声系数为2.3 dB,输入参考的1dB增益压缩点为-11.6dBm,功耗为14.4mW,芯片面积为0.49mm2.     

Guidelines for designing BJT amplifiers with low 1/f AM and PM noise

In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.     

Relationship of AM to PM noise in selected RF oscillators

We have studied the amplitude modulation (AM) and phase modulation (PM) noise in a number of 5 MHz and 100 MHz oscillators to provide a basis for developing models of the origin of AM noise. To adequately characterize the AM noise in high performance quartz oscillators, we found it necessary to use two-channel cross-correlation AM detection. In the quartz oscillators studied, the power spectral density (PSD) of the f(-1) and f(0) regions of AM noise is closely related to that of the PM noise. The major difference between different oscillators of the same design depends on the flicker noise performance of the resonator. We therefore propose that the f(-1) and f(0) regions of AM and PM noise arise from the same physical processes, probably originating in the sustaining amplifier.     

Very sensitive measurement method of electron devices current noise

The problem of measuring very low levels of current noise in bipoles (linear or not) is dealt with, and a measurement technique is proposed. This technique allows the measurement of noise power spectra 6-10 dB lower than the equivalent input power spectrum of the amplified necessary to perform the measurement. An improvement of 16-20 dB in the sensitivity is obtained with respect to the one of conventional methods, which, for an acceptable accuracy, require the noise of the bipole under test to be 10 dB larger than the equivalent input one of the amplifier. The present method is based on the accurate measurement of the amplifier transimpedance with respect to the input current noise sources and on the precise evaluation and subtraction of the contribution from all the spurious sources to the total noise. The whole procedure is implemented by means of a dual-channel signal analyzer and almost completely automated. The technique has been tested by using it to measure the power spectra of the noise given by known generators, of the Nyquist noise produced by bipoles made up of resistors and capacitors, and of shot noise in p-n junctions. The experimental results agree very well with theoretical predictions     

Extremely low thermal noise floor, high power oscillators usingsurface transverse wave devices

This paper presents state-of-the-art results on 1-GHz surface transverse wave (STW) oscillators running at extremely high loop power levels. The high-Q single-mode STW resonators used in these designs have an insertion loss of 3.6 dB, an unloaded Q of 8000, a residual PM noise of -142 dBc/Hz at a 1-Hz carrier offset, and operate at an incident power of up to +31 dBm in the loop. Other low-Q STW resonators and coupled resonator filters (CRF), with insertion losses in the 5-9 dB range, can conveniently handle power levels in excess of two Watts. These devices were incorporated into voltage controlled oscillators (VCO's) running from a 9.6-V dc source and provide an RF output power of +23 dBm at an RF/dc efficiency of 28%. Their tuning range was 750 kHz and the PM noise floor was -180 dBc/Hz. The oscillators, stabilized with the high-Q devices and using specially designed AB-class power amplifiers, delivered an output power of +29 dBm and exhibited a PM noise floor of -184 dBc/Hz and a 1-Hz phase noise level of -17 dBc/Hz. The 1-Hz phase noise level was improved to -33 dBc/Hz using a commercially available loop amplifier. In this case, the output power was +22 dBm. In all cases studied, the loop amplifier was found to be the factor limiting the close-to-carrier oscillator phase noise performance     

宽带铋基掺铒光纤放大器增益及噪声特性研究

利用Er3 离子四能级结构速率方程组和光功率传输方程组,数值模拟了铋基掺铒光纤放大器(EDFA)的增益及噪声特性,模拟结果与实验报道结果取得了很好的一致。同时,详尽地分析了增益及噪声特性与光纤长度、泵浦功率和输入信号功率的关系,优化了放大器的性能,从理论上得出一个20dB增益带宽达76nm、噪声系数接近4dB的铋基EDFA。研究表明了铋基掺铒光纤放大器适合用作于现代DWDM系统中C L波段的光纤放大器。     

A microwave photonic generator of chaotic and noise signals

The transition to chaos in a microwave photonic generator has been experimentally studied for the first time, and the generated broadband chaotic microwave signal has been analyzed. The generator represented a ring circuit with the microwave tract containing a low-pass filter and a microwave amplifier. The optical tract comprised a fiber delay line. The possibility of generating chaotic oscillations with uniform spectral power density in a 3–8 GHz range is demonstrated.     

抑制噪声的宽带碲基掺铒光纤放大器性能分析

设计了一个带光隔离器的复合型宽带碲基掺铒光纤放大器（EDTFA）,通过对该结构模型下的速率方程和光功率传输方程组的数值模拟,理论研究了EDTFA在插入光隔离器后的性能变化。研究表明,通过插入光隔离器抑制反向传输的放大自发辐射（ASE）噪声,可以有效地改善宽带EDTFA的信号增益和噪声特性。在光纤激活长度240cm、铒掺杂浓度2000ppm和前向泵浦功率200mW下,光隔离器插入在最佳位置处时,1540nm～1600nm波段内16路信道小信号增益分别提高了0.8dB～5．9dB,噪声系数降低了0.2dB～2．2dB。研究结果对于新型宽带EDTFA应用于WDM通信系统中具有理论指导意义。     

A High Gain,Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application

With the development of the times, people’s requirements for communication technology are becoming higher and higher. 4G communication technology has been unable to meet development needs, and 5G communication technology has emerged as the times require. This article proposes the design of a low-noise amplifier (LNA) that will be used in the 5G band of China Mobile Communications. A low noise amplifier for mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing Company (TSMC) 0.13 μm Radio Frequency (RF) Complementary Metal Oxide Semiconductor (CMOS) process. The LNA employs self-cascode devices in currentreuse configuration to enable lower supply voltage operation without compromising the gain. This design uses an active feedback amplifier to achieve input impedance matching, avoiding the introduction of resistive negative feedback to reduce gain. A common source (CS) amplifier is used as the input of the low noise amplifier. In order to achieve the low power consumption of LNA, current reuse technology is used to reduce power consumption. Noise cancellation techniques are used to eliminate noise. The simulation results in a maximum power gain of 22.783, the reverse isolation (S₁₂) less than -48.092 dB, noise figure (NF) less than 1.878 dB, minimum noise figure (NFmin)=1.203 dB, input return loss (S₁₁) and output return loss (S₂₂) are both less than -14.933 dB in the frequency range of 2515-4900 MHz. The proposed Ultra-wideband (UWB) LNA consumed 1.424 mW without buffer from a 1.2 V power supply.     

一种降低D类功率放大器开关噪声的设计

传统D类功率放大器因特有的开关噪声对水下电子设备的信号接收、通信控制和信号传输等电信号产生很大的干扰,限制了D类功率放大器在水下电子设备中的广泛应用针对这一现象,首先阐明了Σ-Δ调制的D类功率放大器降低开关噪声的原理,然后对传统调制方式和Σ-Δ调制方式的D类功率放大器进行原理分析,并在Simulink软件中进行仿真对比。仿真结果表明,传统D类功率放大器在开关频率处的开关噪声能量高,Σ-Δ调制的D类功率放大器的开关噪声能量分散在一定的带宽内,并且开关噪声能量峰值低于传统D类功率放大器。     

"Real time" noise measurements with sensitivity exceeding the standard thermal noise limit

A possibility of "real-time" noise measurements with spectral resolution better than a standard thermal noise limit has been experimentally demonstrated at microwave frequencies. The enhancement in the sensitivity of spectral measurements was achieved due to more efficient use of the signal power via the power recycling technique. By utilizing such a technique, the noise floor of a 9 GHz "real time" measurement system was reduced by 3 dB below the standard thermal noise limit. This makes possible the characterization of intrinsic fluctuations in individual low-noise microwave components, such as ferrite circulators, without the need for cascading them or using the cross-correlation signal processing.     

Analysis of light noise sources in a recycled Michelson interferometer with Fabry-Perot arms

We present a method by which the effect of laser field variations on the signal output of an interferometric gravitational wave detector is rigorously determined. Using the Laser Interferometer Gravitational Wave Observatory (LIGO) optical configuration of a power recycled Michelson interferometer with Fabry-Perot arm cavities as an example, we calculate the excess noise after the input filter cavity (mode cleaner) and the dependence of the detector strain sensitivity on laser frequency and amplitude noise, radio frequency oscillator noise, and scattered-light phase noise. We find that noise on the radio frequency sidebands generally limits the detector's sensitivity.     

Correlation between upper and lower sidebands

Experimental measurements supported by a simple model show that the upper and lower phase modulation (PM) noise sidebands are always equal and 100% correlated, independent of the noise power originating from multiplicative or additive processes. Similarly, we show that the upper and lower amplitude modulation (AM) noise sidebands are also equal and 100% correlated, independent of the noise power originating from multiplicative or additive processes, Moreover, the single sideband (SSB) PM noise is always equal to one-half the total PM noise. The same is true for the AM noise. Although the upper and lower PM or AM noise sidebands are equal and correlated for broadband additive noise, the phase between the AM and the PM sidebands varies randomly with time. These conclusions still hold even when the RF noise sidebands are not symmetric about the carrier.     

One-port noise model of a crystal oscillator

This paper presents a one-port noise model of a crystal oscillator combined with equivalent impedances of a resonator and linearized feedback amplifier. Based on the noise conversion technique, we translate the thermal additive and flicker noise of both the resonator and amplifier into the oscillator signal amplitude and phase. The generic transformation coefficients for the noise are derived, and the power spectral density (psd) function of the oscillator signal phase is analyzed in detail. The remarkable property of the model is demonstrated by determining the separate contribution of each noise source to the oscillator performance. Some important rules for shaping the phase psd are noted. The consistency with Leeson's model also is reported.     

Gain improvement in a dual-stage S-band EDFA by filtration of forward C-band ASE

Gain improvement in a dual-stage S-band erbium-doped fiber amplifier (S-band EDFA) is demonstrated using a broadband fiber Bragg grating (FBG) operating in the conventional-band (C-band) region or a C-band/S-band wavelength division multiplexing (WDM) coupler which filters out the forward C-band amplified spontaneous emission (ASE) in the amplifier system, thus increasing the population inversion in the S-band region. The gain for the amplifier with the WDM coupler increases by about 8.5 dB with an input signal power of ?40 dBm, compared to that of the conventional dual-stage amplifier. The gain improvement varies from 4.0–9.2 dB at a wavelength region between 1480 to 1512 nm without a significant noise figure penalty.     

基于改进型匹配网络的宽带高效率E类功放的设计

为了解决E类功放工作带宽过窄的问题,对E类功放的输入、输出匹配网络提出了一种改进方案.该方案中输出匹配网络采用微带线结构与切比雪夫低通匹配网络相结合的方法,在较宽的工作带宽内有效地抑制了谐波;并采用阻抗变换方法设计了含闭式解的宽带带通输入匹配网络,明显增强了输入匹配网络设计的灵活性.利用该方案,同时采用多谐波双向牵引技术得到功率管的最佳源阻抗和负载阻抗,基于CGH40010F功率管设计了一款应用于L波段的宽带高效率E类功放.测试结果表明,在输入功率为28dBm,漏极偏置电压VDS=28V,栅极电压VGS=-3.3V时,在整个L波段频率范围内漏极工作效率大于65%,最高达到83%,输出功率为39~41.1dBm,增益为11~13.1dB,增益平坦度为±1dB.这一结果验证了该改进方案的有效性,使得E类功放具有宽带宽、高效率的性能.     

Gain and noise figure enhancement of Er+3/Yb+3 co-doped fiber/Raman hybrid amplifier

An Er/Yb co-doped fiber/Raman hybrid amplifier (HA) is proposed and studied theoretically and analytically to improve the gain and noise figure of optical amplifiers. The calculations are performed under a uniform dopant and steady-state conditions. The initial energy transfer efficiency for Er/Yb co-doped fiber amplifier (EYDFA) is introduced, while the amplified spontaneous emission (ASE) is neglected. The glass fiber used for both Er/Yb and Raman amplifiers is phosphate. Different pump powers are used for both EYDFA and RA with 1 μW input signal power, 1 m length of Er/Yb amplifier and 25 km length of Raman amplifier (RA). The proposed model is validated for Er/Yb co-doped amplifier and Raman amplifier separately by comparing the calculating results with the experimental data. A high gain and low noise figure at 200 mW Raman pump power and 500 mW Er/Yb pump power are obtained for the proposed HA as compared with the experimental results of EYDFA, Raman amplifier and the EDFA/Raman hybrid amplifier.     

Compact and low power consumption K-band differential low-noise amplifier design using transformer feedback technique

A compact and low power consumption three-stage differential K-band low-noise amplifier (LNA) with a 10 dB differential mode gain at 25.8 GHz and a 3 dB bandwidth of 22.8-26.8 GHz by using a transformer feedback technique with standard 0.18 mum CMOS technology is presented. The minimum input and output return losses over a 3 dB bandwidth are 11 and 7 dB, respectively. Fully differential characterisations of the noise figure (NF) and the common mode rejection ratio (CMRR) are demonstrated. The obtained NF and CMRR are 4.84 dB and 23.3 dB at 25.8 GHz. The input 1 dB compression point and input third-order intercept point are 17.8 and 5 dBm, respectively. The overall power consumption is 25.6 mW. This three-stage differential LNA only occupies an area of 0.63 x 0.88 mm².