共查询到20条相似文献,搜索用时 234 毫秒
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多晶硅薄膜晶体管泄漏区带间隧穿电流的建模 总被引:1,自引:1,他引:0
讨论了带间隧穿(BBT)效应在多晶硅薄膜晶体管所有的泄漏机制中占主导地位的条件因素,说明了在高场或低温情况下,泄漏电流主要来自带间隧穿.考虑了BBT的两个产生区域--栅漏交叠处和靠近漏端的PN结耗尽区,分析了陷阱态密度以及掺杂浓度对BBT电流的影响,最后提出了一个适用于多晶硅薄膜晶体管泄漏区的带间隧穿电流模型. 相似文献
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本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。针对新型薄发射极晶闸管特性改善对薄发射极参数的要求,重点研究了采用不同方法时退火条件对薄发射区掺杂剖面、结深以及杂质总量的影响。管芯研究结果表明,在适当的退火条件下,离子注入掺杂制备浅结是改善器件特性较为理想的方法。 相似文献
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通常人们对氮化硼薄膜的S掺杂,采用的是在氮化硼制备过程中就地掺杂的方法,文中则采用S离子注入方法.氮化硼薄膜用射频溅射法制得.实验结果表明,在氮化硼薄膜中注入S,可以实现氮化硼薄膜的n型掺杂;随着注入剂量的增加,氮化硼薄膜的电阻率降低.真空退火有利于氮化硼薄膜S离子注入掺杂效果的提高.在离子注入剂量为1×1016cm-2时,在600℃的温度下退火60min后,氮化硼薄膜的电阻率为2.20×105 Ω·cm,比离子注入前下降了6个数量级. 相似文献
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The article describes a model representation of radar probing data in form of a mixture of background and target samples, which is the sum of two random variables with very different parameters. For model development we research the behavior of the central moments of the distribution mix without assuming the distribution law form. An example it is described the detection of the signal at the output of compression system of chirp ionosonde. 相似文献
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解决IP网QoS问题是目前通信领域的研究热点之一.虽然研究已经取得了一定的进展,但人们对于IP 网QoS本身的含义及相关的问题还有着不同的理解.本文将从IP网QoS的定义入手讨论相关的一些问题以及解决IP网QoS问题所做的各种努力. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1968,56(6):1024-1032
Assuming that visual responses are due to the action of particles on the membrane of the visual cells, the stochastic variability of the response should be a function of the number of particles producing it. Quantitative predictions can be made with the aid of a model proposed in previous articles. It is found that responses produced in visual cells of Limulus by absorption of a single photon have the stochastic properties which would be expected if the response to one photon were brought about by 25 particles. It is concluded from this that the processes leading to visual responses produce multiplication of particles. The effects of temperature and of metabolic poisons suggest that these processes are of chemical nature. 相似文献
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A. M. Emel’yanov 《Semiconductors》2010,44(9):1134-1139
A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of
the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption
edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of
determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting
radiation from the sample. 相似文献
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“计算机组成原理”设计性实践教学模式研究 总被引:1,自引:0,他引:1
本文阐述了"计算机组成原理"设计性实验教学的重要性,对设计性实验教学的目的和基本特征进行了归纳,对"计算机组成原理"设计性实验教学的现状进行了调查,对存在的问题进行了较深入的分析;在此基础上.对组成原理设计性实验的教学模式进行了研究,对设计性实验的体系进行了初步设计,并对"计算机组成原理"设计性实验的实施方法进行了探讨. 相似文献