Improved Hydrogen Capping Effect in n-Type Crystalline Silicon Solar Cells by SiN(Si-Rich)/SiN(N-Rich) Stacked Passivation

The effect of hydrogen capping of SiN(Si-rich)/SiN(N-rich) stacks for n-type c-Si solar cells was investigated. Use of a passivation layer consisting of Si-rich SiN with a refractive index (n) of 2.7 and N-rich SiN with a refractive index of 2.1 improved the thermal stability. A single SiN passivation layer with a refractive index of 2.05 resulted in an initial lifetime of 200 μs whereas the layer with a refractive index of 2.7 resulted in a high initial lifetime of 2 ms, but the layer degraded rapidly after firing. A stacked passivation layer with refractive indices of 2.1 and 2.7 had a stable lifetime of 1.5 ms with an implied open-circuit voltage (iV _oc) of 720 mV after firing. The thermally stable passivation mechanism with changing amounts of Si–N and Si–H bonding was analyzed by Fourier-transform infrared (FTIR) spectroscopy. Incorporation of the SiN _x stack layer (2.7 + 2.1) into the passivated rear of n-type Cz silicon screen-printed solar cells resulted in energy conversion efficiency of 19.69%. Improved internal quantum efficiency in the long-wavelength range above 900 nm, with V _oc of 630 mV, is mainly because of superior passivation of the rear surface compared with conventional solar cells.     

Absolute measurement at 1 THz of the optical coupling of a F.I.R. conical antenna with a Josephson detector

We present the first absolute measurement of the optical coupling of a FIR antenna with a Josephson detector. We have studied a wide band FIR coupling system made of a conical antenna (discone) and a focussing paraboloid mirror. The calculated efficiency is (6.8±0.3)10^?2 for the optimum choice of parameters at 1 THz. The best measurements using a HCN laser at 891 GHz are in agreement while the average achieved coupling is (2.3±0.4)10^?2 reflecting the experimental difficulties.     

Sensitivity of a wide-band F.I.R. receiver using a Josephson self oscillator mixer

The system temperature of a receiver using a Josephson junction as a self oscillator mixer has been measured in the range 0.6 to 2 THz. The experimental value T_S=53000K (DSB) at 900 GHz is in good agreement with the calculated value. A T_S～12 000 K is predicted with a 30 K i.f. amplifier Possible applications are related to fast frequency tunable receivers (over one octave) with limited spectral resolution.     

Channel Estimation in Long Term Evolution Uplink Using Minimum Mean Square Error-Support Vector Regression

In this paper, minimum mean square error-support vector regression (MMSE-SVR) is proposed, which is shown to be adequate for the estimation of the long term evolution (LTE) uplink channel with nonlinear features. MMSE-SVR was applied to estimate real channel environments such as the vehicular A channels defined by the International Telecommunication Union (ITU). The simulation results show that the proposed method has a better performance than the least squares support vector machine (LS-SVM) and the standard MMSE with linear and spline interpolation.     

System study on direct sequence spectrum of radio-frequency identification

This paper considers points of secure and anti-collision of the Radio-frequency identification (RFID) technology. Source symbols are represented by a special coding, termed Minimum Energy (ME) coding, which exploits redundant bits for saving power when transmitted via RF links with On-Off Keying (OOK). This ME coding is applied to Direct Sequence Spread Spectrum (DSSS) RFID tag in order to enhance security as well as to reduce collision. This synchronized DSSS RFID system is designed and simulation is conducted to verify the advantage of DSSS RFID and present the power efficiency enhance 4 dB, quantities are taken at Bit Error Rate (BER) of 10e-4. When the channel uses the ME coding combined with a DSSS code and OOK without FM0 encoding as is disclosed in the EPC-C1G2/ISO 18000-6 Type C standard. Finally, the maximum number of users in this Direct-Sequence Code Division Multiple Access (DS-CDMA) RFID system is calculated under the condition of successfully acquired.     

Terahertz Spectra of L-Ascorbic Acid and Thiamine Hydrochloride Studied by Terahertz Spectroscopy and Density Functional Theory

We have investigated the terahertz spectra of L-ascorbic acid and thiamine hydrochloride measured by terahertz time-domain spectroscopy (THz-TDS) and Fourier transform infrared spectroscopy (FTIR). The measured absorption spectra were demonstrated to be in good agreement with the results simulated by Density Functional Theory (DFT) using hybrid functional B3LYP with basis set of 6-31G (d), except with slight frequency shift and few peaks missing. We presented the comparison of measured spectra by the FTIR spectroscopy employing low temperature silicon bolometer as detector and the TDS system. The measured spectra of the L-ascorbic acid showed shoulder bands at 0.25, 1.1, 1.5, 1.82, 2.03, 2.30, 2.44, 2.67, 2.97, 3.12, and 3.40 THz, respectively. The spectra of the thiamine hydrochloride show shoulder bands at 0.48, 1.11, 1.57, 1.75, 1.92, 2.08, 2.31, 2.53, 2.69, 2.85, 3.12, 3.22, and 3.31 THz. Most absorption peaks of the two samples agree with the results simulated by Density Function Theory (DFT) method of Gaussian 09 software. In our work, more spectral peaks based on experimental and theoretical results were found in comparison to that of other groups, since we employed higher sensitive FTIR measurement system and considered the effect of number of molecule unit in simulation. The study suggests that the effect of intermolecular vibration is stronger than intramolecular interaction on the absorption bands in THz region.     

Ant Optimized Link Quality for Ad Hoc on Demand Distance Vector

The wireless interfaces in Mobile Ad-Hoc Networks (MANETs) have limited transmission range and traffic is relayed through intermediate nodes to ensure intra node communication. Routing plays an important role in network reliability and performance. MANET’s characteristics like mobility and resource constraints adversely affect routing performance. A new MANET routing method based on Ad hoc On- demand Distance Vector (AODV) and Ant Colony Optimization is proposed in this paper. Ad hoc networks can emulate achievement of complex solutions with limited intelligence and individual capacity as seen in ant communities. A new link quality metric enhances AODV routing algorithm to enable it to handle link quality to evaluate routes between nodes.     

Simultaneous prediction of density and moisture content of wood by terahertz time domain spectroscopy

In this study, demonstration of simultaneous prediction of solid wood density and moisture content, both of which are critical in manufacturing operations, of 4 species (Aspen, Birch, Hemlock and Maple) was accomplished using terahertz time-domain spectroscopy (THz-TDS). THz measurements of wood at various moisture contents were taken for two orientations of the THz field (parallel and perpendicular) with respect to the visible grain. The real and imaginary parts of the dielectric function averaged over the frequency range of 0.1 to 0.2 THz had strong correlation with density and moisture content of the wood. We extend a model that has been applied previously to oven-dry wood to include the effects of moisture below the fiber saturation point by combining two effective medium models, which allows the dielectric function of water, air and oven-dry cell wall material to be modeled to give an effective dielectric function for the wood. A strong correlation between measured and predicted values for density and moisture content were observed.     

Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device

Al/Poly(methyl methacrylate)(PMMA)/p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating of PMMA solution. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of Al/PMMA/p-Si structures have been investigated in the frequency range of 1 kHz–10 MHz at room temperature. The diode parameters such as ideality factor, series resistance and barrier height were calculated from the forward bias current–voltage (I–V) characteristics. In order to explain the electrical characteristics of metal–polymer–semiconductor (MPS) with a PMMA interface, the investigation of interface states density and series resistance from C–V and G–V characteristics in the MPS structures with thin interfacial insulator layer have been reported. The measurements of capacitance (C) and conductance (G) were found to be strongly dependent on bias voltage and frequency for Al/PMMA/p-Si structures. The values of interface state density (D _it) were calculated. These values of D _it and series resistance (R _s) were responsible for the non-ideal behavior of I–V and C–V characteristics.     

Terahertz polarization beam splitter based on photonic crystal and multimode interference

We design a compact terahertz （THz） polarization beam splitter. Both plane wave expansion method and fi- nite-difference time-domain method are used to calculate and analyze the characteristics of the proposed device. The designed polarization beam splitter can split TE-polarized and TM-polarized THz waves into different propagation di- rections. The simulation results show that the extinction ratios are larger than 18.36 dB for TE polarization and 13.35 dB for TM polarization in the frequency range from 1.86 THz to 1.91 THz, respectively. The designed polarization beam splitter has the advantages of small size and compact structure with a total size of 4.825 mm×0.400 mm.     

Sample Thickness Measurement with THz-TDS: Resolution and Implications

The accuracy of any measurement with terahertz time-domain spectroscopy (THz-TDS) depends strongly on knowing and supplying the precise sample thickness when processing the raw terahertz data. Sample thickness usually is estimated using other (non-THz) metrology and invariably involves some degree of uncertainty. It turns out that the terahertz data itself typically also contains information regarding sample thickness. However, there is limited systematic work addressing the following questions: What is the best method for extracting sample thickness from THz-TDS data? And, what is the thickness resolution obtainable with THz-TDS? In this study we demonstrate how these questions can be answered in general by answering them for a specific example: undoped silicon wafers. We determine the accuracy with which the exact thickness of nominally 500 μm silicon wafers can be measured using transmission mode THz-TDS. We analyze and compare the resolution of 5 different approaches for determining sample thickness using THz-TDS data, including two new methods and three methods proposed in the literature. The quantitative results and analyses of methods we present will be useful in developing far-infrared optical metrology. Conversely the quantitative results presented can be used to relate uncertainty in sample thickness to uncertainty in the measured terahertz data both in the time domain and frequency domain (phase and amplitude). Finally, a precise understanding of the relationship between sample thickness and THz-TDS data can be used to formulate superior THz-TDS data work-up methodologies.     

Robust MMSE Design With Asynchronous Interference Mitigation in Cooperative Base Station Systems

This paper investigates minimum mean square error (MMSE) with asynchronous interference mitigation in cooperative base station systems. We consider the asynchronous transmission because of the different propagation times between the base station (BS) and mobile stations (BSs). Meanwhile, the channel quantization errors duo to channel quantization is taken into account in our analysis. The proposed scheme is robust to asynchronous interference and channel quantization errors in BSs cooperation systems. Simulations results show that proposed MMSE scheme achieve an improved performance compared with the conventional MMSE in BSs cooperative systems.     

A New Ultralightweight RFID Protocol for Low-Cost Tags: R^{2}AP

Several ultralightweight radio frequency identification (RFID) authentication protocols have been proposed in recent years. However, all of these protocols are reported later that they are vulnerable to various kinds of attacks (such as replay attack, de-synchronization attack, full disclosure attack, etc.) and/or have user privacy concerns. In this paper, we propose a new ultralightweight RFID protocol named reconstruction based RFID authentication protocol (R \(^{2}\) AP), which is based on the use of a new bitwise operation reconstruction. Operation reconstruction has three important properties: Hamming weight unpredictability, irreversibility and effectiveness. Some or all of these properties are absent in previous protocols and therefore has caused a lot of insecurity issues. The proposed R \(^{2}\) AP takes advantage of reconstruction to guarantee security of RFID system. Furthermore, we improve the Juels–Weis untraceability model so that the extended mathematic model can be used to analyze security functionality for ultralightweight RFID protocols. Our security analysis and performance evaluations demonstrate that (1) R \(^{2}\) AP can withstand all attacks mentioned in the paper and protect users’ privacy; (2) R \(^{2}\) AP is indeed an effective RFID protocol that can be implemented on low-cost tags.     

A practical RFID authentication mechanism for digital television

As information technology continuously progresses, more applied technologies are developed, such as radio frequency identification (RFID). In this paper, we propose a novel digital television (DTV) structure that uses RFID for encryption. RFID is widely used for various applications because of its advantages such as an extended lifetime and security, and it is less affected by environmental constraints. The proposed protocol uses RFID for encryption to withstand many attacks that the traditional system is vulnerable to, such as impersonation attack, replay attack and smart card cloning. Compared with other protocols, the proposed protocol is more secure and efficient. Thus, our proposed protocol makes the DTV framework more complete and secure.     

A study of the apparatus function of a grid Fabry-Perot interferometer used as a F.I.R. spectrometer: Computing of the spectrum

Influences of various parameters on the apparatus function of a F.I.R. grid Fabry-Perot spectrometer are analysed. A pseudo-deconvolution method allowing an improvement of experimental results is tested by simulation and then applied to data concerning the isotopic HCl doublet at 41 cm^?1.     

The performance of alloyed (CdS0.33Se0.67) quantum dots-sensitized TiO2 solar cell

The performance of alloyed CdS_0.33Se_0.67 quantum dots-sensitized solar cells (QDSSCs) is studied. Fluorine doped Tin Oxide (FTO) substrates were coated with 20nm-diameter TiO₂ nanoparticles (NPs). Presynthesized CdS_0.33Se_0.67 quantum dots (QDs) (radius 3.1 nm) were deposited onto TiO₂ nanoparticles (NPs) using direct adsorption (DA) method, by dipping for different times at ambient conditions. The FTO counter electrodes were coated with platinum, while the electrolyte containing I ^?/I ₃ ^? redox species was sand-wiched between the two electrodes. The characteristic parameters of the assembled QDSSCs were measured at different dipping times, under AM 1.5 sun illuminations. The maximum values of short circuit current density (J _sc) and conversion efficiency (η) are 1.115 mA/cm² and 0.25% respectively, corresponding 6h dipping time. Furthermore, the J _sc increases linearly with increasing the intensities of the sun light which indicates the linear response of the assembled cells.     

Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate

Specific features of the growth of the GaN/AlN/Si heterocomposite in which layers of Group-III element nitrides are grown on a silicon substrate by hydride vapor-phase epitaxy are studied. The effect of the temperature at which the AlN buffer layer is grown on diffusion processes at the heterointerfaces and on the quality of the epitaxial layers being grown is considered. It is shown that, with the epitaxial technique used, the buffer layer should be grown at high temperatures (1080°C) because the thickness of the component-mixing region is minimized in this case and abrupt interfaces are formed in the GaN/AlN/Si heterocomposite. The double-stage growth of gallium nitride on the high-temperature AlN buffer layer with a thickness of 300–400 nm makes it possible to obtain GaN layers with thicknesses of up to 0.3 μm without crack formation.     

Fast and Secure Handover Authentication Scheme Based on Ticket for WiMAX and WiFi Heterogeneous Networks

Integrated WiMAX and WiFi networks is of great potential for the future due to the wider coverage of WiMAX and the high data transport capacity of WiFi. However, seamless and secure handover (HO) is one of the most challenging issues in the WiMAX and WiFi heterogeneous networks. In this paper, we present a fast and secure HO authentication scheme based on credential ticket for WiMAX and WiFi heterogeneous networks. In the proposed scheme, Mobile Station (MS) shows its corresponding credential ticket generated by the previously visited Base Station (BS)/Access Point (AP) to the target BS/AP whenever an HO occurs, and then the MS and target BS/AP can complete the mutual authentication and derive their shared session key without interacting with the Authentication, Authorization, and Accounting server, which significantly reduces the HO authentication delay. Moreover, our scheme fulfills the essential security requirements in HO authentication semantics and the formal verification by the AVISPA tool shows that the proposed scheme is secure against various malicious attacks. In addition, the theoretical analysis and simulation indicate that our scheme outperforms the existing HO authentication schemes in terms of communication and computation cost.     

Properties of low-temperature (80-300° C) pyrolytic SiO2 on Si and InP

We report on a new low-temperature pyrolytic deposition technology for silicon dioxide. We present data characterizing the electrical and optical properties of this dielectric deposited on Si and InP substrates. The effects of thermal processing are also reported. Deposition of high-quality SiO₂ is achieved by reacting SiH₄ and O₂ at pressures of 2–12 Torr. Reactions occur by pyrolysis only, promoting stoichiometric SiO₂ deposition and good interfacial properties. No plasma- or photo-enhancement is required. Deposition is achieved at temperatures as low as 80° C, the lowest temperature ever reported for pyrolytic SiO₂ deposition. Rates as high as 65 Å/min at 100° C and 100-150 Å/min at 150-300° C are attained. The leakage current densities measured for both Si and InP MIS capacitors (e.g. 10^-9 Å/cm² for 150° C SiO₂) are two to six orders of magnitude lower than values reported for plasma- and photo-enhanced SiO₂ deposited at equivalent temperatures. The high-temperature integrity of this dielectric also makes it a promising annealing cap for group III-V compound semiconductors. Our annealing studies show that SiO₂-capped indium phosphide surfaces remain specular up to 850° C.     

Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices

Several superlattices (SL's) with different layer thicknesses, grown by molecular beam epitaxy (MBE), were disordered via low temperature (550?600°C) Zn diffusions to investigate layer thickness effects on both the Zn diffusion process and the Al-Ga interdiffusion process. The Zn diffusion coefficients were measured using secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) and found to be ?10^?12 cm²/sec, increasing somewhat with decreasing layer thickness. The activation energy for the Zn diffusion process ranged from 3.1 eV for an 1100Å/period SL to 2.1 eV for a 320Å/period SL. The Al-Ga interdiffusion coefficient and the activation energy associated with the interdiffusion process were calculated from AES depth profiles. The coefficient is on the order of 10^?16 cm²/sec and the activation energy is approximately 1 eV, independent of the SL layer thickness.