溅射非晶态薄膜磁性的控制

微电子技术的迅速发展要求电子元件薄膜化,从而促进了磁性薄膜的发展.为了达到控制溅射非晶态薄膜磁性的目的,从溅射非晶态薄膜的组成成分、溅射工艺参数、基体材料及温度、膜层厚度和镀后热处理工艺等几方面论述了影响非晶态溅射薄膜磁性的因素,结果表明,薄膜组成、膜厚、基材、溅射工艺及镀后热处理对溅射非晶态薄膜的磁性有较大的影响,应根据不同磁性要求加以控制.     

第十九讲 真空溅射镀膜

<正>近年来,随着溅射设备及工艺方法的不断创新,无论是金属,还是其他材料均可用溅射技术制备薄膜,满足各行各业的需求。5.2直流二级溅射普通直流二极溅射是在溅射靶材上施加直流负电位(称阴极靶),阳极为放置被镀工件的基片架。直流二极溅射装置如图20所示,在真空镀     

磁控溅射工艺参数对涤纶机织物基纳米金属薄膜抗静电性能的影响

在室温条件下采用磁控溅射技术在涤纶机织物表面沉积金属薄膜,利用扫描电镜(SEM)和原子力显微镜(AFM)观察纳米金属薄膜的表面形貌,通过分别改变磁控溅射工艺参数溅射时间、溅射功率和气体压强,研究其对试样抗静电性能的影响。实验结果表明,溅射时间和溅射功率对镀金属薄膜试样的抗静电性能均影响较大,而气体压强影响相对较小。溅射时间40min、溅射功率120W、气体压强1.6Pa工艺条件下,镀Cu膜试样的抗静电性能最好;溅射时间40min、溅射功率120W、气体压强1Pa或1.6Pa工艺条件下,镀Ag膜试样的抗静电性能最好,而且镀Ag比镀Cu薄膜试样的抗静电性能更优异。     

真空管道TiN膜热出气率实验研究

简要叙述了小孔流量法测量材料出气率实验的原理和实验装置，给出了不锈钢溅射镀TiN膜在不同情况下的热出气率，并对影响不锈钢溅射镀TiN膜热出气率情况的各种因素进行了分析，为使用溅射镀TiN膜表面处理的储存环真空室的设计提供了依据。     

溅射镀及其应用

溅射镀技术在最近几年获得了显著进展和广泛应用,本文介绍它的发展、原理、设备类型及其在工业上的应用。尤其是低温高速溅射镀特别引人注目。     

溅射镀成膜速率的研究

真空溅射镀与蒸发镀相比,膜层较牢固、致密,但成膜速率较低。如何提高成膜速率,已成为改进溅射镀工艺的主要方向。由于溅射镀的机理比较复杂,难以确定的因素较多,因而成膜速率的理论估算有困难。本工作详细研究了靶材的迁移过程,得到成膜速率的计算公式,与实验结果符合。该公式所反映的参量关系,有可能对提高成膜速率提供较清晰的途径。     

高催化活性析氢电极的制备现状

对高催化活性析氢电极的各种制备方法(如电沉积法、去合金法、化学镀、复合镀、溅射法及机械合金化等)进行了归纳,并指出了今后析氢电极的发展趋势.     

磁控溅射法制备高反射铝膜

通过先后调整溅射沉积时间、溅射功率以及溅射气压等镀膜参数,然后结合所镀样品的反射率测量,分析了镀膜参数对铝膜反射率的影响;通过调整不同的离子束清洗时间,结合所镀样品的太阳光谱反射率测量以及附着力测试,研究了离子束清洗对铝膜性能的影响。结果表明,在这些影响因素中离子束清洗对铝膜性能的影响很大。     

复合离子镀AlTiN薄膜的表面形貌

本工作将阴极真空电弧沉积法和磁控溅射离子镀法结合形成复合镀膜工艺,即用电弧蒸发Ti靶的同时,用磁控溅射Al靶,并通入反应气体N2,以在高速钢基底上镀制AlTiN薄膜,考察了复合镀膜方法获得的AlTiN薄膜的表面形貌,并将其与单一法镀膜的表面形貌进行了对比分析.电弧离子镀制备的AlTiN薄膜表面颗粒很多,而且尺寸大,表面很粗糙,磁控溅射制备的AlTiN薄膜表面光滑平整,复合镀得到的AlTiN薄膜表面粗糙度介于二者之间,但从形貌上看,复合镀的薄膜呈现出典型的层状生长特征,在SEM下可清晰地看到表面的层状生长在部分区域不完全.测试发现,复合镀薄膜形貌并不是电弧镀和溅射镀薄膜形貌的简单混合,而是具有自身独特的特征,这可能是由于电弧弧光等离子体与溅射的辉光等离子体相互作用的结果.     

一种高熔点金属涂层的制备方法

研制了一种由多个空心阴极并列组合而成的，可直接作为溅射靶的多重空心阴极溅射靶，其溅射输出量可用电压，气压及空心阴极的高度和宽度比控制。人Ｗ，Ｍｏ合金制成的多重空心阴极溅射靶所做的合金涂镀试验表明，这种方法涂层沉积速度快，涂怪致密并与基体结合良好，适用于多种金属或其合金的溅射沉积，尤其是高熔点金属的溅射沉积。     

1.6 Composition and stress state of thin films deposited by ion beam sputtering

The ion beam sputtering technique offers several advantages over conventional sputtering systems. This technique operates at a lower pressure and substrate temperature than conventional sputtering. In addition, the angle of deposition which is easily varied with ion beam sputtering is essentially fixed in dc and rf diode sputtering. As a result of these advantages, many of the parameters which effect film stress, resistivity, and grain size can be varied independently.Several properties of ion beam sputtered Ni, Al, Ni₃Al and Au thin films have been evaluated as a function of ion beam current density, target material, and the angle and distance of the substrate from the target.The grain size and stress were found to vary with the angle of deposition. There is an apparent correlation between electrical resistivity and the oxygen content in the films. Both properties depend upon the grain size. The stress levels of the films are shown to be influenced by the oxygen content. These experimental results are discussed in light of models proposed to explain the origin of stress in thin films.     

无马达驱动的旋转圆柱形磁控溅射器

在大型薄膜连续生产线中,磁控溅射器的溅射速率、使用周期是影响生产效率与成本的重要因素.本文提出一种新型的无马达驱动的具有高溅射速率、高靶材利用率、长的靶使用周期、安装与使用简单的磁控溅射器.可广泛应用于各类大、中型连续生产设备中.     

离子束溅射沉积干涉光学薄膜技术

离子束溅射技术是近些年发展起来的制备高质量光学薄膜的一种非常重要的方法,它具有其它制膜技术所无法比拟的优点。但是,国内外对这方面的的研究和介绍甚少,且鲜见报到,本文着重介绍了离子束溅射技术的发展、原理和特征以及应用前景。     

The preparation of permalloy 80/20 thin films using a pulsed DC discharge in a hollow cathode

Permalloy thin films have many applications as sensors and actuators but the preparation of magnetic films by magnetron sputtering is problematic since the target material reduces or changes the magnetic configuration of the magnetron. Hollow cathode discharges can produce similar or greater plasma densities to that found in magnetron sputtering and can therefore be operated over a similar pressure range. Pulsed DC sputtering has been seen to have some advantages compared to DC or RF sputtering. In this paper we report the use of a combination of pulsed DC sputtering with a hollow cathode system to prepare thin films of Permalloy. The deposition rate was found to strongly depend on the gas flow used to prepare the thin films. Combinations of the experimental conditions were found to produce films with a (111) preferential crystal orientation and that the grain size of the crystals was mainly determined by the deposition rate. Furthermore, changes in the degree of ion bombardment did not appear to have any significant affect on the structure of the deposit.     

Cu2O薄膜的制备方法

氧化亚铜（Cu2O）薄膜在太阳能电池及其它光电器件上有重要应用,它具有无毒、制备成本低、材料广泛易得等优点。制备Cu2O薄膜的方法主要有热蒸发、溅射、化学气相沉积和电化学沉积等,本文对Cu2O薄膜的制备方法进行了综述与展望。     

ZnO薄膜气相法制备

ZnO薄膜具有压电、光电、压敏、气敏、发光等多种特性,应用十分广泛。介绍了ZnO薄膜气相法制备原理中的各类主要方法,包括脉冲激光沉积、磁控溅射、分子束外延、金属有机化合物化学气相沉积、单源化学气相沉积和等离子体增强化学气相沉积等技术;分析了这些方法的优缺点;展望了ZnO薄膜今后的研究方向。     

氧化锌镓薄膜的制备技术和研究现状

介绍了制备GZO薄膜的各种方法,如磁控溅射法、化学气相沉积法、溶胶-凝胶法、脉冲激光沉积法、喷雾热解法;阐述了这些方法的镀膜原理,并比较了各种工艺的优缺点。综述了GZO薄膜在单层膜领域、复合多层膜领域有机物基底上镀膜领域和薄膜后续退火处理领域的研究现状。提出了产业化过程中需要解决的问题:①制备高密度、高溅射稳定性和导电性优良的靶材;②完善现有镀膜工艺条件;③制备符合不同生产要求的薄膜。     

Magnetron sputtering – Milestones of 30 years

Since the introduction of the planar magnetron by J.S. Chapin in 1974 magnetron sputtering has become the most important technology for the deposition of thin films. Today it has conquered all industrial branches needing high-quality coatings for realization of new or improvement of existing products. The magnetron cathode combines the advantages of economic deposition even on large areas and the ability to coat very temperature sensitive plastic substrates. Main problems like poor target material utilization of the planar magnetron or process instabilities during deposition of highly insulating films have been solved by many innovations during the past 30 years. Novel films with even better quality seem to be possible with “High Power Impulse Magnetron Sputtering (HiPIMS)”. New attempts to increase sputter yield and thus film growth rate are “Sputter Yield Amplification (SYA)” or sputtering from hot targets. This paper gives a brief review on important milestones of the past three decades and outlines some ongoing developments.     

R.F. sputtering system for the preparation of multilayer optical filters

Thin film multilayer optical filters are usually prepared by vacuum evaporation of successive layers. The deposition of thin films by sputtering has many advantages over the vacuum evaporation technique and hence it is employed for the fabrication of better quality optical filters. However, the filters may be more time consuming to prepare if a single-target sputtering system is used because two different materials are required for alternate layers. For the preparation of multilayer optical filters, a special r.f. sputtering jig arrangement with two target holders is fabricated. Using this the successive layers can be deposited in one pumpdown. A simple coupling arrangement used to match the r.f. generator output impedance to the load is explained. With all the sputtering parameters such as the pressure, the temperature and the power maintained constant except the time, control of the thickness of the multilayers is achieved. A calibration chart of sputtering time versus thickness of the materials to be deposited is prepared for TiO₂ and SiO₂ for the above purpose. Using this calibration chart, the deposition time of different layers of any optical filters based on these dielectric materials can be fixed to obtain optical filters of acceptable quality and reproducibility.     

Magnetron sputter‐deposition on atom layer scale

For many applications there is an increasing request to control the deposition process on an atom layer scale. This offers a lot of advantages like in accuracy, layer homogeneity and tailoring of layer properties. On the other hand the speed and throughput of the process should not suffer from the control on an atom layer scale as it is the case for classical atom layer deposition (ALD). For optical applications especially high‐end interference filter coatings we developed a plasma assisted reactive magnetron sputtering process in combination with a high speed drive for the substrates. This combination allows controlling the layer thicknesses and layer properties on an atom layer scale while maintaining a high deposition rate. The advantages of this process are demonstrated on single layer results of SiO2, HfO2, ZrO2, Ta2O5 and mixed oxides of SiO2‐Nb2O5. Morphology, surface roughness, film stress, refractive index and losses are controlled by the oxygen partial pressure, the substrate temperature, the energy input by the sputtering ‐and assist process and by cosputtering. The outstanding performance of high‐end interference filter coatings like a multi notch filter for fluorescence microscopy is achieved by the very stable and reproducible deposition process in combination with an advanced thickness control strategy based on in‐situ optical thickness control and time control.