Thermal and flicker phase noise analysis in rotary traveling-wave oscillator

This paper analyzes the thermally induced phase noise and the up-conversion of flicker noise into phase noise of rotary traveling-wave oscillator (RTWO). Based on the analyses, this paper extracts the closed-form formulas for the thermal and flicker phase noise of the RTWO. This paper compares the theoretical results with appropriate simulations to evaluate the accuracy of the derived closed-form formulas. Comparisons confirm the accuracy of the extracted phase noise formulas. By using the presented straightforward approach along with accurate phase noise formulas, the designers can understand the RTWO ' s design tradeoffs. Also, they can design the RTWO for a specific phase noise without needing lengthy simulations.     

A common‐mode replica compensated inductor–capacitor voltage‐controlled oscillator for mixed‐signal system‐on‐chip applications

A novel 1.57 GHz complementary metal–oxide semiconductor inductor–capacitor voltage‐controlled oscillator with the common‐mode replica compensation is introduced for mixed‐signal system‐on‐chip applications. In order to alleviate power line disturbances, the center tap node of differential symmetric inductor and the replica biasing circuit are adopted in the differential voltage regulating unit to reduce power supply sensitivity. In addition, this proposed design also leads to low tuning gain and low power dissipation. The post‐layout simulation results under the Taiwan Semiconductor Manufacturing Company's mixed‐signal 0.18 µm 1P6M process show that the proposed design achieves power supply rejection of ?68.6 dB at low frequencies and 1.2 MHz/V pushing sensitivity. It exhibits phase noise of ?130.6 dBc/Hz at a 1 MHz offset from a 1.57 GHz carrier yet dissipates only 5.58 mW under a 1.8 V power supply. Copyright © 2011 John Wiley & Sons, Ltd.     

A 4.8–6.8 GHz low phase noise LC VCO in 0.13‐µm CMOS technology

This letter presents a novel LC voltage controlled oscillator (VCO) supporting the high‐speed serial transmission standard of RapidIO in 0.13‐µm complementary metal‐oxide semiconductor technology. The low phase noise is achieved through several techniques including current source switching, parallel coupled negative transconductance cell, and varactor bias combination scheme. Measured results of proposed circuit show a low phase noise of ?120 dBc/Hz at 1 MHz offset from 6.25 GHz carrier and tuning range of 4.8 ~ 6.8 GHz (34.48%) while consuming 7.4 mW under the supply voltage of 1.2 V. Copyright © 2015 John Wiley & Sons, Ltd.     

Analysis of flicker noise conversion to phase noise in CMOS differential LC oscillators

An analysis of the flicker noise conversion to close‐in phase noise in complementary metal‐oxide semiconductor (CMOS) differential inductance‐capacitance (LC)‐voltage controlled oscillator is presented. The contribution of different mechanisms responsible for flicker noise to phase noise conversion is investigated from a theoretical point of view. Impulse sensitivity function theory is exploited to quantify flicker noise to phase noise conversion process from both tail and core transistors. The impact of different parasitic capacitances inside the active core on flicker noise to phase noise conversion is investigated. Also, it is shown how different flicker noise models for core metal‐oxide semiconductor (MOS) transistors may result in different close‐in phase noise behaviors. Based on the developed analysis, design guidelines for reducing the close‐in phase noise are introduced. Copyright © 2015 John Wiley & Sons, Ltd.     

Survey of integrated‐circuit‐oscillator phase‐noise analysis

This tutorial distills the salient phase‐noise analysis concepts and key equations developed over the last 75 years relevant to integrated circuit oscillators. Oscillator phase and amplitude fluctuations have been studied since at least 1938 when Berstein solved the Fokker–Planck equations for the phase/amplitude distributions of a resonant oscillator. The principal contribution of this work is the organized, unified presentation of eclectic phase‐noise analysis techniques, facilitating their application to integrated circuit oscillator design. Furthermore, we demonstrate that all these methods boil down to obtaining three things: (1) noise modulation function; (2) noise transfer function; and (3) current‐controlled oscillator gain. For each method, this paper provides a short background explanation of the technique, a step‐by‐step procedure of how to apply the method to hand calculation/computer simulation, and a worked example to demonstrate how to analyze a practical oscillator circuit with that method. This survey article chiefly deals with phase‐noise analysis methods, so to restrict its scope, we limit our discussion to the following: (1) analyzing integrated circuit metal–oxide–semiconductor/bipolar junction transistor‐based LC, delay, and ring oscillator topologies; (2) considering a few oscillator harmonics in our analysis; (3) analyzing thermal/flicker intrinsic device‐noise sources rather than environmental/parametric noise/wander; (4) providing mainly qualitative amplitude‐noise discussions; and (5) omitting measurement methods/phase‐noise reduction techniques. Copyright © 2013 John Wiley & Sons, Ltd.     

A study of amplitude‐to‐phase noise conversion in planar oscillators

This paper explores the many interesting implications for oscillator design, with optimized phase‐noise performance, deriving from a newly proposed model based on the concept of oscillator conjugacy. For the case of 2‐D (planar) oscillators, the model prominently predicts that only circuits producing a perfectly symmetric steady‐state can have zero amplitude‐to‐phase (AM‐PM) noise conversion, a so‐called zero‐state. Simulations on standard industry oscillator circuits verify all model predictions and, however, also show that these circuit classes cannot attain zero‐states except in special limit‐cases which are not practically relevant. Guided by the newly acquired design rules, we describe the synthesis of a novel 2‐D reduced‐order LC oscillator circuit which achieves several zero‐states while operating at realistic output power levels. The potential future application of this developed theoretical framework for implementation of numerical algorithms aimed at optimizing oscillator phase‐noise performance is briefly discussed.     

ADF4350低相噪频率合成器在射频无线通信设备中的应用

现代射频和微波电子系统中要求频率源具有高频低相噪,且具有可靠性好、体积小、功耗低的特点。ADF4350频率合成器具有全集成、低相位噪声的优点,内置片上VCO（压控振荡器）与PLL（锁相环）,可以工作在极宽的连续频率范围内,广泛用于无线基础设备及测试设备,无线LAN,CATV和时钟发生器中。本文简要介绍了ADF4350的主要功能,详细给出了基于ADF4350用作直接变换调制器以及和ADuC812,ADSP-21xx的接口连接的设计方案。     

Increasing power efficiency in the design of a low power and low phase noise CMOS LC oscillator

This study developed a local oscillator (LO) with low phase noise and low power consumption. The proposed oscillator core comprises a pair of cross‐coupled transistors, which are fed by another pair of transistors that injects current at moments close to the peak of output voltage. The position of the current injection transistors, which are inserted in series with the cross‐coupled transistors, affects the waveform of current injected into an inductive–capacitive (LC) tank. Installing a capacitor on the source node of the cross‐coupled transistors increases the current injected into the LC tank and thereby augments the output voltage amplitude and power efficiency of the LO. The resonator phase shift and Q can be corrected by adjusting the source capacitance, which filters noise. These changes reduce the phase noise to ?123.4 dBc/Hz at a frequency offset of 1 MHz and improve oscillator performance with a figure of merit equal to ?193.5 dBc/Hz. To evaluate the LC tank, a 5 GHz LO was simulated at 1.8 V power supply and 2.5 mW power consumption. The simulation was conducted using a practical 0.18 complementary metal–oxide–semiconductor model manufactured by the Taiwan Semiconductor Manufacturing Company. The simulation results confirmed the analytical findings.     

锁相环相位噪声的研究与仿真

锁相环在数字电路中一个重要的应用就是作为频率合成器产生高性能的时钟。本文介绍了锁相环的工作原理,重点研究了锁相环输出时钟的相位噪声的影响因素。通过对其线性环路模型进行频域分析,运用反馈控制理论,讨论了环路内各器件的噪声对其输出信号相位噪声的影响。得到了锁相环能良好改善环路带内噪声的分析结果,并且利用ADS搭建仿真电路,验证分析结果,为今后高性能频率合成器的设计和应用提供参考依据。     

Time‐domain analysis of phase‐noise and jitter in oscillators due to white and colored noise sources

This paper presents an original time‐domain analysis of the phase‐diffusion process, which occurs in oscillators due to the presence of white and colored noise sources. It is shown that the method supplies realistic quantitative predictions of phase‐noise and jitter and provides useful design‐oriented closed‐form expressions of such phenomena. Analytical expressions and numerical simulations are verified through measurements performed on a relaxation oscillator whose behavior is perturbed by externally controlled noise sources. Copyright © 2011 John Wiley & Sons, Ltd.     

Experimental comparison of phase‐noise in cross‐coupled RC‐ and LC‐oscillators

Relaxation RC‐oscillators are notorious for their poor phase‐noise performance. However, there are reasons to expect a phase‐noise reduction in quadrature oscillators obtained by cross‐coupling two relaxation oscillators. We present measurements on 5 GHz oscillators, which show that in RC‐oscillators the coupling reduces both the phase‐noise and quadrature error, whereas in LC‐oscillators the coupling reduces the quadrature error, but increases the phase‐noise. A comparison using standard figures of merit indicates that quadrature RC‐oscillators may be a viable alternative to LC‐oscillators when area and cost are to be minimized. Copyright © 2009 John Wiley & Sons, Ltd.     

Monte Carlo analysis of dynamic characteristics and high‐frequency noise performances of nanoscale double‐gate MOSFETs

In this paper, a full‐band Monte Carlo simulator is employed to study the dynamic characteristics and high‐frequency noise performances of a double‐gate (DG) metal–oxide–semiconductor field‐effect transistor (MOSFET) with 30 nm gate length. Admittance parameters (Y parameters) are calculated to characterize the dynamic response of the device. The noise behaviors of the simulated structure are studied on the basis of the spectral densities of the instantaneous current fluctuations at the drain and gate terminals, together with their cross‐correlation. Then the normalized noise parameters (P, R, and C), minimum noise figure (NF_min), and so on are employed to evaluate the noise performances. To show the outstanding radio‐frequency performances of the DG MOSFET, a single‐gate silicon‐on‐insulator MOSFET with the same gate length is also studied for comparison. The results show that the DG structure provides better dynamic characteristics and superior high‐frequency noise performances, owing to its inherent short‐channel effect immunity, better gate control ability, and lower channel noise. Copyright © 2012 John Wiley & Sons, Ltd.     

Analysis and design of LC oscillators associated with frequency multipliers: a phase noise perspective

When a local oscillator signal generation system is based on an LC oscillator and a frequency multiplier, the question of determining the optimal multiplication factor is a key issue. In this paper, the problem is addressed in order to minimize the 1/f ² phase noise within a tuning range constraint. The analysis, with a practical graphical representation, reveals the oscillator phase noise dependence on the oscillating frequency in the transition from two different regimes, named the inductor‐limited quality factor and the capacitor‐limited quality factor. The results obtained enable the evaluation of the phase noise performance of systems based on a sub‐harmonic and super‐harmonic oscillators and how they compare with an oscillator in the fundamental mode. Crucial questions like the phase noise improvement that these systems can achieve are analytically answered. A design methodology is thus proposed and verified through measurements on a frequency source at 31 GHz, composed by a sub‐harmonic voltage‐controlled oscillator followed by an injection‐locked frequency tripler, dedicated to backhauling applications, designed on a BiCMOS process technology. The tuning range is 10%, and the phase noise at a 1‐MHz offset is −112 dBc/Hz. Copyright © 2017 John Wiley & Sons, Ltd.     

Evaluation and comparison of GHz‐range LC oscillators using time‐varying root‐locus

This paper presents a comprehensive comparison between complementary metal‐oxide‐semiconductor (CMOS) LC‐oscillator topologies often used in GHz‐range transceivers. The comparison utilizes the time‐varying root‐locus (TVRL) method to add new insights into the operation of different oscillators. The paper focuses on the treatment of the TVRL trajectories obtained for different oscillators and establishes links between the trajectories and physical phenomena in oscillators. The evaluation of the root trajectories shows the advantages of the TVRL method for comparing oscillator topologies, which is also extended towards the analysis of voltage‐controlled oscillators. The necessary circuit simplifications required in closed‐form root‐locus analysis are avoided by the TVRL, which allows precise oscillator comparison and reveals details on the topology specifics. The derived conclusions have been verified by the Cadence Spectre‐RF simulator on 130‐nm CMOS process. Copyright © 2011 John Wiley & Sons, Ltd.     

频谱分析仪测量相位噪声及测量不确定度分析

相位噪声是电子测量中的一个重要指标,相噪指标的好坏直接影响着整个系统的性能。测试相位噪声的方法有几种,然而,每种测试方法都有各自的优缺点。因此,根据实际的需要来选择适当的测试方法就尤为重要。本文主要是通过实验来讨论用频谱分析来测量相位噪声的方法,并对其测量的结果,应用不确定度理论给出了相应的测量不确定度的分析。     

A carrier phase control suitable for conducted EMI noise reduction in a multiple‐converter system

The conducted EMI noise flowing from power converters to an AC utility line is regulated by international commissions such as the International Electrotechnical Commission (IEC). Adherence to the IEC regulations requires that EMI filters should be used in power electronics equipment. This paper proposes a method for analyzing conducted EMI noise in multiple power converters connected to the same power line. In this method, the phase difference between subharmonic modulated carrier signals at each power converter is taken into account. The phase difference among the power converters determines the EMI noise level in a multiple converter system, as is evident from the analysis of the waveform of the common mode current. In addition, EMI noise suppression using carrier phase control is proposed. In order to reduce the size of the EMI filter effectively, the phase difference θ should be set to 360/nN°, where n is a high‐order harmonic component near 150 kHz and N is the number of power converters. Therefore, the conducted EMI noise can be reduced effectively with the help of the proposed phase control. © 2013 Wiley Periodicals, Inc. Electr Eng Jpn, 183(3): 56–66, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21305     

非线性有源天线阵相位噪声的计算及测试

为了将非线性有源天线阵应用到高性能雷达和通信系统中,必须尽可能地降低非线性有源天线阵的相位噪声。首先介绍了非线性有源天线阵的拓扑结构及相位噪声模型;然后根据该模型详细推导了非线性有源天线阵相位噪声的计算公式,并对整个阵列的相位噪声进行了计算机仿真;最后搭建了1×4单元非线性有源天线阵实验系统并对其相位噪声进行了测试,测试结果与计算机仿真结果吻合;最终得出了非线性有源天线阵低相位噪声信号的产生方法。     

基于PLL频率合成器锁相环的降噪技术

随着无线通信技术的发展以及测试仪器小型化的需要,基于PLL频率合成器锁相环的应用也越来越广泛,这就提出了一个如何在此类锁相环中获得低相位噪声信号的问题。本文简要介绍了PLL频率合成器的基本概念、锁相环的噪声源以及基于频率合成器锁相环相位噪声的估算,在此基础上结合理论推导和工程经验提出了改善相位噪声指标的几种技术措施,包括提高鉴相灵敏度和鉴相频率、优化环路滤波器、改善电源滤波等多种手段。实践证明方法可行有效,获得的环路输出信号不但相位噪声指标满足设计要求,而且杂散信号较少且幅度很低,也为其他该类锁相环的设计和调试提供了有益的参考。     

A numerical model for the oscillation frequency,the amplitude and the phase‐noise of MOS‐current‐mode‐logic ring oscillators

This paper presents a new model for the frequency of oscillation, the oscillation amplitude and the phase‐noise of ring oscillators consisting of MOS‐current‐mode‐logic delay cells. The numerical model has been validated through circuit simulations of oscillators designed with a typical 130 nm CMOS technology. A design flow based on the proposed model and on circuit simulations is presented and applied to cells with active loads. The choice of the cell parameters that minimize phase‐noise and power consumption is addressed. Copyright © 2009 John Wiley & Sons, Ltd.     

Discontinuity correction in piecewise‐linear models of oscillators for phase noise characterization

Decomposition of noise perturbation along Floquet eigenvectors has been extensively used in order to achieve a complete analysis of phase noise in oscillator. Piecewise‐linear approximation of nonlinear devices is usually adopted in numerical calculation based on multi‐step integration method for the determination of unperturbed oscillator solution. In this case, exact determination of the monodromy matrix can be hampered by the presence of discontinuities between models introduced by the approximation. In this paper we demonstrate that, without the proper corrections, relevant errors occur in the determination of eigenvalues and eigenvectors, if adjacent linear models presents discontinuities. We obtain this result by the analysis of a simple 2‐D oscillator with piecewise‐linear parameter. We also demonstrate that a correct calculation can be achieved introducing properly calculated state vector boundary conditions by the use of interface matrices. This correction takes into account the effects of discontinuities between the linear models, leading to exact calculation of eigenvalues and eigenvectors, and, consequently, of the phase noise spectrum. Copyright © 2006 John Wiley & Sons, Ltd.