Near-field analysis of a thick lens and horn combination: theoryand measurements

At millimeter-waves quasi-optical systems are commonly designed based on the Gaussian beam and thin lens approximation. The accuracy of the Gaussian beam and thin lens approximation was studied in the case of a corrugated horn and a thick Teflon lens (focal length to lens diameter ratio f/D=1.2) combination at 87 GHz. A special near-field measurement system was constructed. A large disagreement between the measured and theoretical values with the approximative method was obtained. The measurements showed that the thin lens approximation breaks down when the distance from the input beam waist to the lens is less than 1.5 D. Theoretical values obtained with a thick lens model based on ray tracing and use of exact Huygens' aperture integration principle agree well with the measurements     

Performance analysis of optical heterodyne PSK receivers in thepresence of phase noise and adjacent channel interference

A phase-shift-keying (PSK) optical heterodyne receiver using synchronous detection by means of a Costas phase-locked loop (PLL) is investigated. Taking into account the laser phase noise and adjacent channel interference (ACI), an expression of the phase error variance is derived and error probability calculation is performed. Plots of the error probability versus the number of photons per bit are presented as a function of the optical domain channel spacing (D) and for several linewidth-to-bit-rate ratios (δf/R_b ). Relative sensitivity penalties, based on the performance with and without ACI, are evaluated for several combinations of D and δf/R_b. It is shown that, if lasers with larger linewidths are used, the frequency separation between optical carriers has to be increased in order to allow the same relative sensitivity penalty     

Array feed synthesis for correction of reflector distortion andvernier beamsteering

An algorithmic procedure is described for the synthesis of a planar-array for paraboloidal reflectors to provide simultaneously electronic correction of systematic reflector surface distortions as well as a vernier electronic beamsteering capability. Several f/D ratios and distortion models were examined that are typical of large paraboloidal reflectors. Numerical results are presented showing that, for the range of distortion models considered, significant on-axis gain restoration can be achieved with a one-ring (seven-element) array. However, with seven elements, the array parameters that maximize system gain, do not provide uniform beam-steering (±1 BW) and an additional ring (19 elements) is required. For arrays either 7 or 19 elements, the results indicate that the use of high-aperture-efficiency elements in the array yields higher system gain than can be obtained with elements having lower aperture efficiency. Contour plots of the focal-plane fields are also presented for various distortion and beam-scan-angle cases, showing the dynamic nature of the problem     

1/f noise in hot-carrier damaged MOSFET's: effects ofoxide charge and interface traps

The 1/f noise in the drain current of hot-carrier damaged MOSFETs biased in weak inversion has been studied. By the use of a biased annealing treatment to simultaneously decrease the density of oxide trapped charge (N_ot) and increase the density of interface traps (D_it), the authors have separated the contributions of these two kinds of defects. The results clearly indicate that, while the low-frequency 1/f noise is correlated with N_ot, the high-frequency 1/f noise is correlated with D_it     

Comparisons between a shaped and nonshaped small Cassegrain antenna

An X-band 8.5-ft brassboard antenna system was designed and developed which required a 70% total antenna efficiency and a 25 dB isolation between the circularly polarized transmit and receive ports. To maximize the aperture efficiency, a shaping technique was used to generate a specially contoured subreflector and main reflector. To reduce cost, a configuration was chosen such that the shaped main reflector could be matched with negligible phase error using a commercially available paraboloid. The antenna gain of this shaped system with an electrically small subreflector (10.7 λ) is 0.75 dB higher than that of a conventional system using the same paraboloid and a matching hyperbolic subreflector. Measured results demonstrated that even for a small system the antenna performance can be appreciably improved at low cost by using a shaped subreflector     

Limitations on reflector antenna gain by random surface errors,pointing errors, and the angle-of-arrival jitter

The effects of random surface, pointing, and angle-of-arrival errors on the antenna gain are discussed. It is shown that for manufacturing tolerance ratios greater than 10⁵, the random surface errors decrease the antenna gain only when D/λ>3000. The pointing/angle-of-arrival error causes nonnegligible loss in gain when it exceeds approximately a few tenths of the antenna beamwidth. The gain (and the size) of very large reflector antennas is generally limited by the combined effects of the above errors     

Effect of conduction-band discontinuity on lasing characteristicsof 1.5 μm InGaAs/In(Ga)AlAs MQW-FP lasers

The characteristic temperature (T₀), relaxation frequency (f_r), differential gain (dg /dn) and nonlinear gain coefficient (ϵ) of 1.5-μm InGaAs/In(Ga)AlAs multiple-quantum-well (MQW) Fabry-Perot (FP) lasers grown by gas source molecular beam epitaxy (GSMBE) are reported. It is found that T₀ is little affected by the difference in the conduction band discontinuity. A maximum T₀ value of 86 K is obtained. The dg/dn and ϵ∈ were calculated from the slope of the f_r versus √ power plot and the damping K-factor. It is demonstrated that dg/dn and ϵ of InGaAs/In(Ga)AlAs MQW lasers increase with an increase in the conduction band discontinuity     

Range distance requirements for large antenna measurements

The dependence of the radiation patterns and antenna gains on the measurement distance when both transmitting antenna and receiving antenna have the same order of large dimensions is discussed. The antenna under test is the transmitting antenna. The near-zone radiation patterns (Fresnel pattern) and the antenna gains of various kinds of circular aperture distributions vs the measurement distances are calculated for an arbitrary size of the receiving probe antenna. It is found both theoretically and experimentally that the near-zone measurement error of the radiation patterns introduced when the receiving antenna is of comparable or the same dimension as the transmitting antenna is smaller than the error introduced when the receiving antenna is very small. Thus, it is concluded that as a range criterion 2D²_a/λ is more appropriate than 2(D_a+D_b)² /λ for pattern measurements (D_a and D_b are linear dimensions of the transmitting and receiving antennas, and D_a⩾D_b is assumed). It is shown that the gain error for any aperture distribution obtained by using a large receiving probe antenna is greater at any range distance than the error obtained by using a small antenna such as a dipole     

双馈源双偏置结构星载通信多波束天线

为了使星载通信天线产生赋形波束的同时,又能辐射具有扫描特性的点波束满足特殊情形下的通信要求,提出了一种以单馈源赋形反射面天线为基础,利用另一个馈源进行副反射面赋形,补偿主反射面口径相位差的方法,从而形成高效率点波束,并通过副反射面及对应馈源横向偏焦实现点波束扫描的目的。为了检验方法的有效性,仿真实验了一副口径为2.2 m 的赋形反射面天线。实验结果表明:赋形波束在服务区内部的最小增益是30.0dBi,点波束在服务区内部及周边区域扫描时具有比赋形波束更高的增益,因此,所提方法是有效的。     

Experimental values for the hole diffusion coefficient andcollector transit velocity in P-n-p AlGaAs/GaAs HBTs

The diffusion coefficient (D_h) and a value for the collector velocity (v_h) of holes in AlGaAs/GaAs P-n-p HBTs (heterojunction bipolar transistors) were obtained from high-frequency measurements on structures with different base and collector widths. Quantities for D_h and v _h of 5.6 cm²/s and 5.5×10⁶ cm/s, respectively, were obtained by plotting the total emitter-collector delay versus inverse emitter current and extrapolating the data to infinite emitter current to obtain the base and collector transit delays. An f_t and f_max as high as 15 and 29 GHz, respectively, were obtained for non-self-aligned (1-μm emitter mesa/base contact separation) devices with a 2.6-μm×10-μm emitter     

High-frequency characterization of heterojunction bipolartransistors using numerical simulation

The high-frequency performance of semiconductor devices is estimated using a small-signal numerical calculation based on drift-diffusion equations. In particular, unity current gain frequency in the common-emitter configuration (f_T) and maximum frequency of oscillation (f_max) are calculated for a heterojunction bipolar transistor. f_max is calculated from numerically obtained y parameters using formulas for maximum available gain, Mason's invariant (U), and a passivity criterion. They all give the same value for f_max. The influence of extrinsic and intrinsic base resistance on f_max is investigated for one device design. It is also found that a frequency used approximation formula for f_max is inaccurate, especially at higher current levels     

Wavelength dependence of 1/f noise in the light output oflaser diodes: an experimental study

The optical power emitted by a monomode GaAlAs laser is filtered with a monochromator. The 1/f noise in the filtered emission is found to be directly dependent on the noncoherent emission, such as S_pαP_nc^m. Here s_p is the spectral density of the 1/f fluctuations, P_nc is the average noncoherent power, m=3/2 under spontaneous emission, and m=4 in the superradiation and laser regions. Study of the 1/f noise in the optical power in a band centered at the laser wavelength and with variable bandwidth shows three operating regions. (1) LED region (at low currents): the fluctuations with a 1/f spectrum are uncorrelated in wavelength. (2) Superradiation region (at currents close to the threshold): the fluctuations are correlated. (3) Laser region: the 1/f noise apparently is dominated by noncoherent emission within a small optical band around the laser wavelength     

The dielectric-filled parabola: a new millimeter/submillimeterwavelength receiver/transmitter front end

A design is presented for a semi-integrated millimeter/submillimeter wavelength receiver/transmitter front end incorporating a planar antenna and a solid-state device in an efficient feed structure which can be matched directly to high f-number optical systems. The feed system combines the simplicity and robustness of a dielectric substrate lens with the high gain of a parabolic reflector in a single structure that is termed a dielectric-filled parabola. The same fundamental unit can be configured as either a heterodyne or direct detection mode receiver, a power transmitter or a frequency multiplier by changing out the solid-state device and/or the integrated antenna. The structure can also be used with a small integrated antenna array in a multibeam or imaging arrangement. Design and fabrication details for the feed system are given. These are followed by beam pattern and impedance measurements taken on a microwave model when dipole, bow-tie, log-periodic, and log-spiral antennas are used as the integrated feed elements     

A dispersion formula satisfying recent requirements in microstripCAD

A dispersion formula ϵ^*_eff(f)=ϵ^* -{ϵ^*-ϵ^*_eff(0)}/{1+( f/f₅₀)^m}, for the effective relative permittivity ϵ^*_eff(f) of an open microstrip line is derived for computer-aided design (CAD) use. The 50% dispersion point (the frequency f₅₀ at which ϵ^*_eff(f₅₀)={ϵ ^*+ϵ^*_eff(0)}/2}) is used a normalizing frequency in the proposed formula, and an expression for f₅₀ is derived. To obtain the best fit of ϵ ^*_eff(f) to the theoretical numerical model, the power m of the normalized frequency in the proposed formula is expressed as a function of width-to-height ratio w/ h for w/h⩾0.7 and as a function of w /h, f₅₀, and f for w/h⩽0.7. The present formula has a high degree of accuracy, better than 0.6% in the range 0.1<w/h⩽10, 1<ϵ^*⩽128, and any height-to-wavelength ratio h/λ₀     

When are two geometric Goppa codes equal?

Sufficient and necessary conditions are obtained for which the geometric Goppa codes C(D,G) and C( D,H) are equal for two divisors G and H . In particular, it is proven that if G and H are two effective divisors of the same degree smaller than n-1, then C(D,G) and C(D,H ) are equal, if and only if G=H     

On the performance of an ATM switch with multichannel transmissiongroups

A routing architecture applying the concept of multichannel transmission groups (MCTGs) for ATM systems is proposed. A queuing analysis of an internally nonblocking ATM switch employing this MCTG concept with partially shared output buffers is presented. The analysis is based on the discrete-time DA///D/c /B queuing model. Both bulk input traffic bulk-size distribution (A) and deterministic traffic (D₁ +. . .+D_N) are considered. The impact of switch speedup on the performance is also taken into account. It is shown that the MCTG architecture yields better performance in terms of delay and cell loss probability than its single channel counterpart. It is also found that the switch speedup required to closely approximate the optimal performance obtained by having the switch fabric run N times as fast as the input and output channels, where N is the size of the switch, is rather small compared to N. This makes the practical realization of the proposed switch architecture feasible     

Delay analysis of a packet voice multiplexer by the ΣDi/D/1 queue

The performance of a statistical multiplexer whose inputs consist of a superposition of voice packet streams is studied. The delay for such a system is analyzed by solving the ΣD_i/ D/1 queue. The analytic method can be used to find the approximate mean delay for an arbitrarily large number of trunks and the approximate delay distribution when the number of trunks is less than 100. An efficient hybrid simulation of the packet voice multiplexer which can be used to find the delay distribution for a large number of trunks is presented. In addition, easily computable error bounds for the present approximation are provided, and the accuracy of the M/ D/1 approximation is investigated     

A comparison of three diagonalizers, adaptive crosstalk cancellers,in dual-polarized M-QAM systems

Three different adaptive diagonalizers are compared on a probability of symbol error performance basis for dual-channel M-QAM systems. One diagonalizer (D3) greatly outperforms the other two, and any comparison of the performance of the diagonalizers to that of the minimum mean square error (MMSE) canceller should be based on D3. Receiver structures are also presented     

Measurement distance requirements for both symmetrical andantisymmetrical aperture antennas

Universal curves giving the main-lobe reduction and the first sidelobe level change versus the measurement distance are furnished for various aperture distributions. The widely used Rayleigh 2D²/λ distance criterion (where λ is the radiated wavelength and D is the distance to the antenna) is shown to be unsatisfactory, since the minimum measurement distance depends both on the aperture distribution and on the specific far-field parameter under measurement. It is found that, in order to measure accurately the pattern of antennas with ultralow sidelobes, a measurement distance much greater than the Rayleigh one is needed. Such a distance is more than safe for measurement of the antenna gain and antenna patterns with moderate sidelobe level, but it is greater than necessary to measure the principal parameters of interest in a monopulse system. This latter conclusion is in full agreement with reported experimental results. Some experimental results concerning a monopulse antenna reported     

A 16-b 320-kHz CMOS A/D converter using two-stage third-orderΣΔ noise shaping

The design and measured performance of a two-stage third-order ΣΔ (sigma-delta) analog-to-digital (A/D) converter is described. The A/D converter achieves a 96-dB dynamic range and a maximum signal-to-noise-plus-distortion ratio (S/(N+ D)) r.m.s./r.m.s. of 93 dB with 320-kHz output rate and an oversampling ratio of 64. An analysis of the integrator gain error is presented. The modulator is realized in a 1.2-μm double-metal single-poly CMOS process with an active area of 1.6 mm². This modulator operates from a 5-V power supply and a single reference voltage